US6499648B2 - Method and device for making a metal bump with an increased height - Google Patents

Method and device for making a metal bump with an increased height Download PDF

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Publication number
US6499648B2
US6499648B2 US09/988,097 US98809701A US6499648B2 US 6499648 B2 US6499648 B2 US 6499648B2 US 98809701 A US98809701 A US 98809701A US 6499648 B2 US6499648 B2 US 6499648B2
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Prior art keywords
metal
metal bump
making
tubular member
shaped chamber
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Expired - Fee Related
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US09/988,097
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US20020179686A1 (en
Inventor
Wen-Lo Shieh
Ning Huang
Hui-Pin Chen
Hua-Wen Chiang
Chung-Ming Chang
Feng-Chang Tu
Fu-Yu Huang
Hsuan-Jui Chang
Chia-Chieh Hu
Wen-Long Leu
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Orient Semiconductor Electronics Ltd
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Orient Semiconductor Electronics Ltd
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004Wire welding
    • B23K20/005Capillary welding
    • B23K20/007Ball bonding
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K3/00Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
    • B23K3/06Solder feeding devices; Solder melting pans
    • B23K3/0607Solder feeding devices
    • B23K3/0623Solder feeding devices for shaped solder piece feeding, e.g. preforms, bumps, balls, pellets, droplets
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/11Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods
    • H01L2224/113Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1133Manufacturing methods by local deposition of the material of the bump connector in solid form
    • H01L2224/1134Stud bumping, i.e. using a wire-bonding apparatus
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
    • HELECTRICITY
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    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
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    • HELECTRICITY
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    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399Material
    • HELECTRICITY
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    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/013Alloys
    • H01L2924/014Solder alloys

Definitions

  • This invention is related to a method and device for making a metal bump with an increased height and in particular to one which can increase the connection reliability between the metal bump and the chip and enlarging the contact area between the metal bump and the metal or solder ball.
  • the capillary tube 2 ′ is still the most commonly used tool for making metal stud bumps by means of wire bonding (see FIG. 1 A). As shown, the capillary tube 2 ′ has an inner diameter 21 ′ with an inner wall 22 ′ and has a larger diameter at the upper end than the lower end.
  • a metal wire 3 ′ is inserted into the capillary tube 2 ′ and the lower end of the metal wire 3 ′ is melted to form a ball shaped member 31 ′ by electric spark. Then, ultrasonic vibration and pressure deformation processing are applied to the capillary tube 2 ′ to join the inter-metallic compounds between wire 3 ′ and the chip 1 ′ (see FIG. 1 B). When the capillary tube 2 ′ is removed, a metal bump 32 ′ will be formed on the raised platform 11 ′ of the chip 1 ′ (see FIG. 1 C). Thereafter; a metal or solder ball 4 ′ is soldered on the metal bump 32 ′.
  • the metal bump 32 ′ will have a spherical surface which is insufficient to provide a large contact area and a reliable structure for joining other component parts. Furthermore, the bottom of the metal bump 32 ′ will tend to go beyond the lower opening of the capillary tube 2 ′ under pressure thereby making it difficult to control. Moreover; as the metal bump 32 ′ has a spherical surface, there will not be sufficient area in contact with a metal or solder ball 4 ′ (see FIG. 1 D).
  • the metal bump 32 ′ is so short that the metal or solder ball 4 ′ must be soldered to the metal bump 32 ′ at a very low position thereby making it difficult to make the connection between the die and the fingers of a substrate (or lead frame, chips, metal bumps or the like) and therefore influencing the qualification rate of products.
  • This invention is related to a method and device for making a metal bump with an increased height.
  • FIG. 1A illustrates the lower end of the metal wire being melted to form a ball shaped member according to the prior art
  • FIG. 1B illustrates the connection between the ball shaped member and the die according to the prior art
  • FIG. 1C illustrates a metal bump according to the prior art
  • FIG. 1D illustrates the connection between the metal bump and the metal or solder ball
  • FIG. 2 is a sectional view of the capillary tube according to the present invention.
  • FIG. 3A illustrates how the lower end of the metal wire is melted to form a ball shaped member according to the present invention
  • FIG. 3B illustrates how the lower end of the metal wire is joined with the die according to the present invention
  • FIG. 3C illustrates the metal bump according to the present invention.
  • FIG. 3D illustrates the connection between the metal bump and the metal or solder ball according to the present invention.
  • the high metal bump according to the present invention is manufactured by a hard conical tubular member 20 having a vertical conical passage 21 at the upper portion, a bell shaped chamber 23 at the lower portion which is larger than the vertical conical passage 21 in diameter, and which is located under and communicated with the vertical conical passage 21 , and a circular recess 231 which is larger than the bell shaped chamber 23 in diameter, and which is located under and communicated with the bell shaped chamber 23 , thereby forming a capillary tube 2 with a surface 22 .
  • a metal wire 3 is inserted into the conical passage 21 of the hard conical tubular member 20 , with its lower end protruded down into the bell shaped chamber 23 . Then, the lower end of the metal wire 3 is melted to form a ball 31 . Then, the hard conical tubular member 2 is approached to a raised platform 11 formed on the top of a chip 1 , and the metal wire 3 is heated and bonded on the pad of die to melt and ultrasonic energy is applied to make the melted metal fill up the bell shaped chamber 23 , thereby forming a metal bump 32 on the platform 11 .
  • the bottom of the metal bump 32 has a flange 321 formed by the circular recess 231 of the hard conical tubular member 2 .
  • the cross sectional area of the metal bump 32 will be restricted by the bottom area of the bell shaped chamber 23 and the metal bump 32 will have a height equal to the height 232 of the bell shaped chamber 23 thereby increasing the joining capability between the metal bump 32 and the raised platform 11 of the semiconductor chip 1 and enlarging the contact area 33 between the metal bump 32 and the metal or solder ball 4 .

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

A device for making metal bumps includes a hard conical tubular member having a vertical conical passage at an upper portion thereof, a bell shaped chamber at a lower portion thereof which is larger than the vertical conical passage in diameter, located under and communicated with the vertical conical passage, and a circular recess which is larger than the bell shaped chamber in diameter, located under and communicated with the bell shaped chamber, thereby forming a capillary tube with a surface.

Description

BACKGROUND OF THE INVENTION
1. Field of the Invention
This invention is related to a method and device for making a metal bump with an increased height and in particular to one which can increase the connection reliability between the metal bump and the chip and enlarging the contact area between the metal bump and the metal or solder ball.
2. Description of the Prior Art
Various kinds of methods of making metal bumps on a chip have been developed for flip chip on board (FCOB) technology with a small number of input pins or a small number of Input/Output pins or for flip chip in package (FCIP) with a large number of Input/Output pins, such as evaporation plating, splash plating, electroplating, printing, spraying, and bonding. However, the capillary tube 2′ is still the most commonly used tool for making metal stud bumps by means of wire bonding (see FIG. 1A). As shown, the capillary tube 2′ has an inner diameter 21′ with an inner wall 22′ and has a larger diameter at the upper end than the lower end. A metal wire 3′ is inserted into the capillary tube 2′ and the lower end of the metal wire 3′ is melted to form a ball shaped member 31′ by electric spark. Then, ultrasonic vibration and pressure deformation processing are applied to the capillary tube 2′ to join the inter-metallic compounds between wire 3′ and the chip 1′ (see FIG. 1B). When the capillary tube 2′ is removed, a metal bump 32′ will be formed on the raised platform 11′ of the chip 1′ (see FIG. 1C). Thereafter; a metal or solder ball 4′ is soldered on the metal bump 32′.
However, due to the limitation of the design of the capillary tube 2′, the metal bump 32′ will have a spherical surface which is insufficient to provide a large contact area and a reliable structure for joining other component parts. Furthermore, the bottom of the metal bump 32′ will tend to go beyond the lower opening of the capillary tube 2′ under pressure thereby making it difficult to control. Moreover; as the metal bump 32′ has a spherical surface, there will not be sufficient area in contact with a metal or solder ball 4′ (see FIG. 1D). In addition, the metal bump 32′ is so short that the metal or solder ball 4′ must be soldered to the metal bump 32′ at a very low position thereby making it difficult to make the connection between the die and the fingers of a substrate (or lead frame, chips, metal bumps or the like) and therefore influencing the qualification rate of products.
Therefore, it is an object of the present invention to provide a method and device for making a metal bump with an increased height which can obviate and mitigate the above-mentioned drawbacks.
SUMMARY OF THE INVENTION
This invention is related to a method and device for making a metal bump with an increased height.
It is the primary object of the present invention to provide a method and device for making metal bumps with an increased height which can increase the joining strength with other metal bumps or pads of a die.
It is another object of the present invention to provide a method and device for making metal bumps with an increased height which can enlarge the contact area with the metal or solder ball.
It is still another object of the present invention to provide a method and device for making metal bumps with an increased height which can increase its reliability in joining with other component parts.
It is a further object of the present invention to provide a method and device for making metal bumps which have an increased height but are small in diameter.
The foregoing object and summary provide only a brief introduction to the present invention. To fully appreciate these and other objects of the present invention as well as the invention itself, all of which will become apparent to those skilled in the art, the following detailed description of the invention and the claims should be read in conjunction with the accompanying drawings. Throughout the specification and drawings identical reference numerals refer to identical or similar parts.
Many other advantages and features of the present invention will become manifest to those versed in the art upon making reference to the detailed description and the accompanying sheets of drawings in which a preferred structural embodiment incorporating the principles of the present invention is shown by way of illustrative example.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1A illustrates the lower end of the metal wire being melted to form a ball shaped member according to the prior art;
FIG. 1B illustrates the connection between the ball shaped member and the die according to the prior art;
FIG. 1C illustrates a metal bump according to the prior art;
FIG. 1D illustrates the connection between the metal bump and the metal or solder ball;
FIG. 2 is a sectional view of the capillary tube according to the present invention;
FIG. 3A illustrates how the lower end of the metal wire is melted to form a ball shaped member according to the present invention;
FIG. 3B illustrates how the lower end of the metal wire is joined with the die according to the present invention;
FIG. 3C illustrates the metal bump according to the present invention; and
FIG. 3D illustrates the connection between the metal bump and the metal or solder ball according to the present invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
For the purpose of promoting an understanding of the principles of the invention, reference will now be made to the embodiment illustrated in the drawings. Specific language will be used to describe same. It will, nevertheless, be understood that no limitation of the scope of the invention is thereby intended, alterations and further modifications in the illustrated device, and further applications of the principles of the invention as illustrated herein being contemplated as would normally occur to one skilled in the art to which the invention relates.
Referring to the drawings and in particular to FIG. 2 thereof, the high metal bump according to the present invention is manufactured by a hard conical tubular member 20 having a vertical conical passage 21 at the upper portion, a bell shaped chamber 23 at the lower portion which is larger than the vertical conical passage 21 in diameter, and which is located under and communicated with the vertical conical passage 21, and a circular recess 231 which is larger than the bell shaped chamber 23 in diameter, and which is located under and communicated with the bell shaped chamber 23, thereby forming a capillary tube 2 with a surface 22.
During manufacture, a metal wire 3 is inserted into the conical passage 21 of the hard conical tubular member 20, with its lower end protruded down into the bell shaped chamber 23. Then, the lower end of the metal wire 3 is melted to form a ball 31. Then, the hard conical tubular member 2 is approached to a raised platform 11 formed on the top of a chip 1, and the metal wire 3 is heated and bonded on the pad of die to melt and ultrasonic energy is applied to make the melted metal fill up the bell shaped chamber 23, thereby forming a metal bump 32 on the platform 11. Thereafter, the hard conical tubular member 2 is removed to pull off the necking position between the metal wire 3 and the top of the metal bump 32 thereby leaving the metal bump 32 on the platform 11. The bottom of the metal bump 32 has a flange 321 formed by the circular recess 231 of the hard conical tubular member 2.
Because of the vertical conical passage 21, the bell shaped chamber 23 and the circular recess 231, the cross sectional area of the metal bump 32 will be restricted by the bottom area of the bell shaped chamber 23 and the metal bump 32 will have a height equal to the height 232 of the bell shaped chamber 23 thereby increasing the joining capability between the metal bump 32 and the raised platform 11 of the semiconductor chip 1 and enlarging the contact area 33 between the metal bump 32 and the metal or solder ball 4.
It will be understood that each of the elements described above, or two or more together may also find a useful application in other types of methods differing from the type described above.
While certain novel features of this invention have been shown and described and are pointed out in the annexed claim, it is not intended to be limited to the details above, since it will be understood that various omissions, modifications, substitutions and changes in the forms and details of the device illustrated and in its operation can be made by those skilled in the art without departing in any way from the spirit of the present invention.

Claims (1)

We claim:
1. A method of making metal bumps comprising the steps of:
inserting a metal wire into a conical passage of a hard conical tubular member with a lower end protruded down into a bell shaped chamber;
melting said lower end of said metal wire to form a ball shaped member;
approaching said hard conical tubular member to a raised platform formed on a top of a die;
melting said metal wire and applying ultrasonic energy to make melted metal fill up said bell shaped chamber and a circular recess thereby forming a metal bump on said raised platform; and
removing said hard conical tubular member to pull off a necking position between said metal wire and a top of said metal bump thereby leaving a metal bump on said raised platform, a bottom of said metal bump having a flange formed by said circular recess of said hard conical tubular member.
US09/988,097 2001-05-31 2001-11-19 Method and device for making a metal bump with an increased height Expired - Fee Related US6499648B2 (en)

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TW90113434A TW515067B (en) 2001-05-31 2001-05-31 Metal bump having higher pillar and the fabricated device thereof
TW090113434 2001-05-31
TW90113434A 2001-05-31

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050121493A1 (en) * 2003-12-04 2005-06-09 Kulicke & Soffa Investments, Inc. Multi-part capillary
US20050218188A1 (en) * 2004-04-02 2005-10-06 Chippac, Inc. Wire bond capillary Tip
US20060001157A1 (en) * 2004-06-30 2006-01-05 Carberry Patrick J Methods and apparatus for integrated circuit ball bonding using stacked ball bumps
US20120037687A1 (en) * 2010-08-11 2012-02-16 Fujitsu Limited Capillary and ultrasonic transducer for ultrasonic bonding
US20140374467A1 (en) * 2013-06-24 2014-12-25 Jia Lin Yap Capillary bonding tool and method of forming wire bonds

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4415115A (en) * 1981-06-08 1983-11-15 Motorola, Inc. Bonding means and method
US4886200A (en) * 1988-02-08 1989-12-12 Mitsubishi Denki Kabushiki Kaisha Capillary tip for bonding a wire
US4974767A (en) * 1988-04-25 1990-12-04 Texas Instruments Incorporated Double cone wire bonding capillary
JPH0327544A (en) * 1989-06-23 1991-02-05 Mitsubishi Electric Corp Capillary of wire bonding apparatus
US5871141A (en) * 1997-05-22 1999-02-16 Kulicke And Soffa, Investments, Inc. Fine pitch bonding tool for constrained bonding
US5938105A (en) * 1997-01-15 1999-08-17 National Semiconductor Corporation Encapsulated ball bonding apparatus and method
US6065667A (en) * 1997-01-15 2000-05-23 National Semiconductor Corporation Method and apparatus for fine pitch wire bonding
US6158647A (en) * 1998-09-29 2000-12-12 Micron Technology, Inc. Concave face wire bond capillary
US6213378B1 (en) * 1997-01-15 2001-04-10 National Semiconductor Corporation Method and apparatus for ultra-fine pitch wire bonding
US6260753B1 (en) * 1998-08-07 2001-07-17 Stmicroelectronics S.R.L. Gold bumps bonding on connection pads and subsequent coining of their vertex

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4415115A (en) * 1981-06-08 1983-11-15 Motorola, Inc. Bonding means and method
US4886200A (en) * 1988-02-08 1989-12-12 Mitsubishi Denki Kabushiki Kaisha Capillary tip for bonding a wire
US4974767A (en) * 1988-04-25 1990-12-04 Texas Instruments Incorporated Double cone wire bonding capillary
JPH0327544A (en) * 1989-06-23 1991-02-05 Mitsubishi Electric Corp Capillary of wire bonding apparatus
US5938105A (en) * 1997-01-15 1999-08-17 National Semiconductor Corporation Encapsulated ball bonding apparatus and method
US6065667A (en) * 1997-01-15 2000-05-23 National Semiconductor Corporation Method and apparatus for fine pitch wire bonding
US6213378B1 (en) * 1997-01-15 2001-04-10 National Semiconductor Corporation Method and apparatus for ultra-fine pitch wire bonding
US5871141A (en) * 1997-05-22 1999-02-16 Kulicke And Soffa, Investments, Inc. Fine pitch bonding tool for constrained bonding
US6260753B1 (en) * 1998-08-07 2001-07-17 Stmicroelectronics S.R.L. Gold bumps bonding on connection pads and subsequent coining of their vertex
US6158647A (en) * 1998-09-29 2000-12-12 Micron Technology, Inc. Concave face wire bond capillary

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050121493A1 (en) * 2003-12-04 2005-06-09 Kulicke & Soffa Investments, Inc. Multi-part capillary
US7249702B2 (en) * 2003-12-04 2007-07-31 Kulicke And Soffa Industries, Inc. Multi-part capillary
US7500590B2 (en) 2003-12-04 2009-03-10 Kulicke And Soffa Industries, Inc. Multi-part capillary
US20050218188A1 (en) * 2004-04-02 2005-10-06 Chippac, Inc. Wire bond capillary Tip
US7407080B2 (en) * 2004-04-02 2008-08-05 Chippac, Inc. Wire bond capillary tip
US20060001157A1 (en) * 2004-06-30 2006-01-05 Carberry Patrick J Methods and apparatus for integrated circuit ball bonding using stacked ball bumps
US7009305B2 (en) 2004-06-30 2006-03-07 Agere Systems Inc. Methods and apparatus for integrated circuit ball bonding using stacked ball bumps
US20120037687A1 (en) * 2010-08-11 2012-02-16 Fujitsu Limited Capillary and ultrasonic transducer for ultrasonic bonding
US20140374467A1 (en) * 2013-06-24 2014-12-25 Jia Lin Yap Capillary bonding tool and method of forming wire bonds

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US20030006268A1 (en) 2003-01-09
DE10148460A1 (en) 2002-12-05

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