JPH0327544A - Capillary of wire bonding apparatus - Google Patents
Capillary of wire bonding apparatusInfo
- Publication number
- JPH0327544A JPH0327544A JP1162007A JP16200789A JPH0327544A JP H0327544 A JPH0327544 A JP H0327544A JP 1162007 A JP1162007 A JP 1162007A JP 16200789 A JP16200789 A JP 16200789A JP H0327544 A JPH0327544 A JP H0327544A
- Authority
- JP
- Japan
- Prior art keywords
- capillary
- wire
- bonding
- semiconductor element
- oscillation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- 230000005540 biological transmission Effects 0.000 abstract description 6
- 238000006073 displacement reaction Methods 0.000 abstract description 6
- 238000000926 separation method Methods 0.000 abstract description 3
- 230000010355 oscillation Effects 0.000 abstract 4
- 230000000694 effects Effects 0.000 description 6
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
- H01L2224/78302—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
Abstract
Description
この発明は、基板と該基板上に接着された半導体素子と
をワイヤで接合するワイヤボンディング装置のキャビラ
リに関するものである。The present invention relates to a cavity for a wire bonding device for bonding a substrate and a semiconductor element bonded onto the substrate using a wire.
第６図は、従来のキャピラリを用いて半導体素子とワイ
ヤとを接合したときの断面図であり、図において、１は
例えば、ルビー等を加工して形威したキャピラリ、２は
半導体端子を外部に取出すためのワイヤ、３は半導体素
子、４は前記ワイヤ２と半導体素子３とを超音波振動を
与えて互いにこすり合い界面に合金層を形成した接合面
である。
次に動作について説明する。まず、第６図に示す様に、
キャピラリ１は図示の如き断面形状をしており半導体素
子３上に熔融させたワイヤ２を加圧し該キャピラリ１に
超音波振動Ｃを印加する。
するとワイヤ２の接合面はワイヤ保持部１ｂを介して超
音波振動Ｃを受けるので、その時の摩擦抵抗により接合
面４の温度が上昇して、ついには界面に合金層が形威さ
れ接合が完了する。
また、第７図は従来のワイヤボンディングにおける超音
波振動伝達のメカニズムを図示したもので、キャピラリ
１を介しワイヤ２を半導体素子３上に押し付けネールヘ
ンドボンディングを実行しようとするとその時の衝撃等
によりキャピラリ１に上下方向の変化が発生したり、も
しくは半導体素子３に上下方向の変位が発生して、間隙
ａが生し、この間隙ａにより水平方向に間隙ｂが生ずる
。
従って接合面４に伝達される超音波振動の振幅は■
ｃ−ｂとなって振動の伝達効率が減衰することになり安
定した条件でのボンディングができなくなってワイヤボ
ンディングの歩留り低下を招く。また、同様の理由から
第８図に示す様に間隙ａが生ずるとワイヤ２においてキ
ャピラリ１のワイヤ保持部（円すい部）ｌｂによって保
持されている部分だけが振動してしまい、キャピラリ１
が円すい部で滑るためヘッドの形状が変形し接合面から
ワイヤ２を引剥してしまうこともある。FIG. 6 is a cross-sectional view when a semiconductor element and a wire are bonded using a conventional capillary. 3 is a semiconductor element; 4 is a joint surface where the wire 2 and semiconductor element 3 are rubbed against each other by applying ultrasonic vibration to form an alloy layer at the interface. Next, the operation will be explained. First, as shown in Figure 6,
The capillary 1 has a cross-sectional shape as shown in the figure, and a wire 2 melted on a semiconductor element 3 is pressed, and an ultrasonic vibration C is applied to the capillary 1. Then, the bonding surface of the wire 2 receives ultrasonic vibration C via the wire holding part 1b, and the temperature of the bonding surface 4 rises due to the frictional resistance at that time, and finally an alloy layer is formed at the interface and the bonding is completed. do. Moreover, FIG. 7 illustrates the mechanism of ultrasonic vibration transmission in conventional wire bonding, and when attempting to perform nail-hand bonding by pressing the wire 2 onto the semiconductor element 3 through the capillary 1, the shock etc. When a vertical change occurs in the capillary 1 or a vertical displacement occurs in the semiconductor element 3, a gap a is created, and this gap a creates a horizontal gap b. Therefore, the amplitude of the ultrasonic vibrations transmitted to the bonding surface 4 becomes 1c-b, and the vibration transmission efficiency is attenuated, making it impossible to perform bonding under stable conditions, resulting in a decrease in the yield of wire bonding. Furthermore, for the same reason, if a gap a is created as shown in FIG.
Since the wire slips on the conical portion, the shape of the head is deformed and the wire 2 may be pulled off from the joint surface.
従来のワイヤボンディング装置のキャピラリは以上のよ
うに構成されているので、キャピラリ１によってワイヤ
２を半導体素子３上に押し付けた時の衝撃によるキャピ
ラリ１の僅かな上下方向の変位に対しても超音波振動の
伝達力が減衰されてホンディング不良を助長する原因と
なったり、又ワイヤ保持部１ｂの断面形状が円すい状で
あるため、上下方向の変位はキャピラリ１の滑りを発生
させ、半導体素子３へのワイヤ２の接合を不安定なもの
にする等の課題があった。
この発明は上記のような課題を解消するためになされた
もので、キャピラリと半導体素子との間に間隙が発生し
た場合でも常に安定した超音波振動を接合面に伝達する
ことができるワイヤボンディング装置のキャピラリを得
ることを目的とする。Since the capillary of the conventional wire bonding device is constructed as described above, ultrasonic waves are generated even when the capillary 1 is slightly displaced in the vertical direction due to the impact when the wire 2 is pressed onto the semiconductor element 3 by the capillary 1. The transmission force of the vibration is attenuated, which may promote bad bonding, and since the cross-sectional shape of the wire holding portion 1b is conical, displacement in the vertical direction may cause the capillary 1 to slip, causing the semiconductor element 3 to slip. There were problems such as making the bonding of the wire 2 to the wire unstable. This invention was made to solve the above problems, and provides a wire bonding device that can always transmit stable ultrasonic vibration to the bonding surface even if a gap occurs between the capillary and the semiconductor element. The aim is to obtain a capillary of
この発明におけるワイヤボンディング装置のキャピラリ
はワイヤを半導体素子上に加圧接触させるキャビラリの
先端部内壁のワイヤ保持部形状を円すい部と円筒部とを
組合せた多段形状にしたものである。In the capillary of the wire bonding apparatus according to the present invention, the shape of the wire holding portion on the inner wall of the tip portion of the capillary for pressurizing the wire onto the semiconductor element is formed into a multi-stage shape combining a conical portion and a cylindrical portion.
この発明におけるキャピラリは超音波振動をワイヤに与
え半導体素子と接合する振動伝達効率を高めるためにキ
ャビラリの先端内部のワイヤ保持部形状を円すい部と円
筒部とを組合せた多段形状とすることによりキャピラリ
接合時の衝撃によるキーｌ・ピラリ上下変位に対しても
効率よく超音波振動をワイヤに伝達する。The capillary according to the present invention has a wire holding part inside the tip of the capillary having a multi-stage shape that combines a conical part and a cylindrical part in order to increase the vibration transmission efficiency of applying ultrasonic vibration to the wire and bonding it to the semiconductor element. Ultrasonic vibrations are efficiently transmitted to the wire even when the key l/pillar is vertically displaced due to impact during bonding.
以下、この発明の一実施例を図について説明する。
図中、第６図と同一の部分は同一の符号をもって図示し
た第１図において１ａはワイヤ保持部（円筒部）、１ｂ
は同様にワイヤ保持部（円すい部）である。
次に動作について説明する。まず、第１図は従来の作用
と同様の原理で正常な状態で接合される場合である。
第２図は、本発明が効果を奏する場合の状熊断面図で、
キャピラリ１を介してワイヤ２を半導体素子３上に押し
付けた際にその衝撃によりキャピラリ１に上下方向の変
位が発生した場合、もしくは半導体素子３に上下方向の
変位が発生した場合、間隙ｂが生ずる。この間隙ｂがワ
イヤ保持部（円筒部）ｌａ以下であれば、キャピラリ１
に超音波振動Ｃを印加した際にその振動を肩の高さｄで
受けることになり半導体素子３との接合面４に効率良く
振動を伝達することができ常に安定した信頼性の高いボ
ンディングを行うことができる。
なお、上記実施例ではワイヤ保持部１ａが円筒状の場合
について説明したが第３図に示す様にワイヤ２とキャピ
ラリ１の分離性を向上させるために抜き勾配１ｃを設け
てもよい。
また、上記実施例ではキャピラリｌをルビーの棒材を削
り出して成形する例について示したが粉末を焼結させて
成形するセラξツクキャピラリであってもよく上記実施
例と同様の効果を奏する。
また、第４図または第５図に示す様にワイヤ２とキャピ
ラリ１の分離性をより向上させるために、直径の異なる
円筒や、傾斜の異なる円錐、つまり抜き勾配１ｃ，ｌｄ
等を、階段状に多段に設けてもよく上記実施例と同様の
効果を奏する。An embodiment of the present invention will be described below with reference to the drawings. In the figure, the same parts as in FIG. 6 are indicated by the same reference numerals. In FIG.
Similarly, is a wire holding part (conical part). Next, the operation will be explained. First, FIG. 1 shows a case in which they are joined in a normal state based on the same principle as the conventional operation. FIG. 2 is a cross-sectional view of the bear in which the present invention is effective.
When the wire 2 is pressed onto the semiconductor element 3 through the capillary 1 and the impact causes a vertical displacement in the capillary 1, or when a vertical displacement occurs in the semiconductor element 3, a gap b is created. . If this gap b is less than the wire holding part (cylindrical part) la, the capillary 1
When ultrasonic vibrations C are applied to the semiconductor element 3, the vibrations are received at the shoulder height d, and the vibrations can be efficiently transmitted to the bonding surface 4 with the semiconductor element 3, ensuring stable and reliable bonding at all times. It can be carried out. In the above embodiment, the case where the wire holding part 1a is cylindrical is explained, but as shown in FIG. 3, a draft angle 1c may be provided to improve the separability of the wire 2 and the capillary 1. Further, in the above embodiment, an example was shown in which the capillary l was formed by cutting out a ruby bar material, but it may also be a ceramic capillary formed by sintering powder, and the same effect as in the above embodiment can be obtained. . In addition, as shown in FIG. 4 or FIG. 5, in order to further improve the separation between the wire 2 and the capillary 1, cylinders with different diameters and cones with different inclinations, that is, draft angles 1c, ld
etc. may be provided in multiple stages in a stepwise manner, and the same effect as in the above embodiment can be obtained.
以上のように、この発明によれば、キャピラリの先端内
部の形状を円すいと円筒とを組み合わせた多段の構造に
したので、ワイヤボンディング時のワイヤとキャピラリ
との分離性が向上し、また超音波振動の伝達効率が向上
して半導体素子との接合の信頼性が増大ずる効果がある
。
５
６As described above, according to the present invention, the inside shape of the tip of the capillary is made into a multi-stage structure combining a cone and a cylinder, so that the separation between the wire and the capillary during wire bonding is improved, and the ultrasonic This has the effect of improving the vibration transmission efficiency and increasing the reliability of bonding with the semiconductor element. 5 6
第１図は、この発明の−・実施例によるワイヤボンディ
ング装置のキャピラリを用いた通常状態の断面図、第２
図は、この発明が効果を発揮する際の状態断面図、第３
図ないし第５図はこの発明の他の実施例を示す同様断面
図、第６図は従来のキャピラリを用いたときの通常状態
の断面図、第７図及び第８図は従来のキャビラリで接合
不良を発生する際の状態断面図である。
図において、１はキャピラリ、２はワイヤ、３は半導体
素子である。
なお、図中、同一符号は同一、又は相当部分を示す。FIG. 1 is a sectional view of a wire bonding apparatus according to an embodiment of the present invention in a normal state using a capillary;
The figure is a cross-sectional view of the state when this invention exerts its effects.
5 through 5 are similar sectional views showing other embodiments of the present invention, FIG. 6 is a sectional view in a normal state when a conventional capillary is used, and FIGS. 7 and 8 are joined by a conventional capillary. FIG. 3 is a cross-sectional view of the state when a defect occurs. In the figure, 1 is a capillary, 2 is a wire, and 3 is a semiconductor element. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.
Claims (1)
接触し、超音波振動を施して該ワイヤを接合するワイヤ
ボンディング装置のキャピラリにおいて、前記キャピラ
リの円すい形状の先端部内壁を階段状の円すい形状とし
たことを特徴とするワイヤボンディング装置のキャピラ
リ。In a capillary of a wire bonding device, in which a wire is pulled out to the tip, melted, pressed into contact with a semiconductor element, and bonded by applying ultrasonic vibration, the inner wall of the conical tip of the capillary is formed into a stepped cone. A capillary for a wire bonding device characterized by a shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1162007A JPH0327544A (en) | 1989-06-23 | 1989-06-23 | Capillary of wire bonding apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1162007A JPH0327544A (en) | 1989-06-23 | 1989-06-23 | Capillary of wire bonding apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0327544A true JPH0327544A (en) | 1991-02-05 |
Family
ID=15746274
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1162007A Pending JPH0327544A (en) | 1989-06-23 | 1989-06-23 | Capillary of wire bonding apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0327544A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5938105A (en) * | 1997-01-15 | 1999-08-17 | National Semiconductor Corporation | Encapsulated ball bonding apparatus and method |
| US6065667A (en) * | 1997-01-15 | 2000-05-23 | National Semiconductor Corporation | Method and apparatus for fine pitch wire bonding |
| US6165888A (en) * | 1997-10-02 | 2000-12-26 | Motorola, Inc. | Two step wire bond process |
| US6213378B1 (en) | 1997-01-15 | 2001-04-10 | National Semiconductor Corporation | Method and apparatus for ultra-fine pitch wire bonding |
| US6499648B2 (en) * | 2001-05-31 | 2002-12-31 | Orient Semiconductor Electronics Limited | Method and device for making a metal bump with an increased height |
| JP2007263532A (en) * | 2006-03-30 | 2007-10-11 | Dainippon Printing Co Ltd | Wind speed distribution adjusting device |
-
1989
- 1989-06-23 JP JP1162007A patent/JPH0327544A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5938105A (en) * | 1997-01-15 | 1999-08-17 | National Semiconductor Corporation | Encapsulated ball bonding apparatus and method |
| US6065667A (en) * | 1997-01-15 | 2000-05-23 | National Semiconductor Corporation | Method and apparatus for fine pitch wire bonding |
| US6213378B1 (en) | 1997-01-15 | 2001-04-10 | National Semiconductor Corporation | Method and apparatus for ultra-fine pitch wire bonding |
| US6165888A (en) * | 1997-10-02 | 2000-12-26 | Motorola, Inc. | Two step wire bond process |
| US6461898B1 (en) | 1997-10-02 | 2002-10-08 | Motorola, Inc. | Two step wire bond process |
| US6499648B2 (en) * | 2001-05-31 | 2002-12-31 | Orient Semiconductor Electronics Limited | Method and device for making a metal bump with an increased height |
| JP2007263532A (en) * | 2006-03-30 | 2007-10-11 | Dainippon Printing Co Ltd | Wind speed distribution adjusting device |
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