JP3972517B2 - How to connect electronic components - Google Patents

How to connect electronic components Download PDF

Info

Publication number
JP3972517B2
JP3972517B2 JP16694799A JP16694799A JP3972517B2 JP 3972517 B2 JP3972517 B2 JP 3972517B2 JP 16694799 A JP16694799 A JP 16694799A JP 16694799 A JP16694799 A JP 16694799A JP 3972517 B2 JP3972517 B2 JP 3972517B2
Authority
JP
Japan
Prior art keywords
wire
tool
bonding
power device
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP16694799A
Other languages
Japanese (ja)
Other versions
JP2000357705A (en
Inventor
健史 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Priority to JP16694799A priority Critical patent/JP3972517B2/en
Publication of JP2000357705A publication Critical patent/JP2000357705A/en
Application granted granted Critical
Publication of JP3972517B2 publication Critical patent/JP3972517B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4807—Shape of bonding interfaces, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48455—Details of wedge bonds
    • H01L2224/48456—Shape
    • H01L2224/48458—Shape of the interface with the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48717—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48724—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H01L2224/78314—Shape
    • H01L2224/78315—Shape of the pressing surface, e.g. tip or head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85047—Reshaping, e.g. forming the ball or the wedge of the wire connector by mechanical means, e.g. severing, pressing, stamping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/012—Semiconductor purity grades
    • H01L2924/01204—4N purity grades, i.e. 99.99%
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/2076—Diameter ranges equal to or larger than 100 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To prevent a bonding wire from coming out of a bonding tool, when the bonding tool vibrates in a method for connecting a power device to the terminals of a wiring board through wedge bonding, even if the initial pressure applied to the tool is reduced by a method where frictional force between the bonding wire and bonding tool is increased. SOLUTION: After a bonding wire 20 supported by the wedge parts of a bonding tool 10 is pressed against the groove part of a jig 30 with a groove made of a material harder than the wire 20 so as to increase a contact area M1 between the wire 20 and the tool 10, the wire 20 is pressed against a power device 1 and made to vibrate under pressure applied by the tool 10 to connect the wire 20 to the power device 1. Then the wire 20 is layed out to the terminal of a wiring board and connected to the terminal through wedge bonding.

Description

【０００１】
【発明の属する技術分野】
本発明は、ワイヤボンディング用のツールに接触して支持されたワイヤを、このツールを介して加圧しながら振動させることにより、電子部品と相手側部材とをワイヤボンディングするようにした電子部品の接続方法、いわゆるウェッジボンディングによる電子部品の接続方法に関する。
【０００２】
【従来の技術】
この種のウェッジボンディングによる接続方法は、一般に、電子部品としてＳｉチップよりなるパワーデバイス（ＩＧＢＴ素子やパワーＭＯＳ素子等）等を用い、相手側部材として配線基板上の銅（Ｃｕ）等よりなるターミナル等を用いる。そして、上記Ｓｉチップ上のアルミニウム（Ａｌ）等よりなる電極と上記ターミナルとをＡｌ等よりなるワイヤにて結線するものである。
【０００３】
従来のウェッジボンディング方法を図８の概略断面図に示す。これは、まず、図８（ａ）に示す様に、ボンディングツールＪ１に接触支持されたワイヤＪ２を被接合材（例えばＳｉチップ上の電極等）Ｊ３に接触させる。次に、図８（ｂ）に示す様に、このツールＪ１を介して、ワイヤＪ２を被接合材Ｊ３に対し、一定圧力で加圧して押さえた状態で超音波振動で擦りあわせて接合する。最終的な接合状態を最終的に図８（ｃ）に示す。
【０００４】
ここで、ワイヤＪ２と被接合材Ｊ３を擦りあわせるためには、ツールＪ１とワイヤＪ２とがしっかり拘束しあっていることが必要で、拘束するために加圧力を大きくする。その加圧力により、図８（ｂ）に示す様に、ワイヤＪ２の中心部Ｊ４がつぶれ、ワイヤＪ２と被接合材Ｊ３との接触面積が大きくなる。そして、ツールＪ１が振動すると、ツールＪ１に拘束されたワイヤＪ２も振動し、接触域の外周部より外側に向かって接合する。
【０００５】
より詳細な最終的な接合状態を、図９に示す。なお、図９（ａ）の上側部分は図８（ｃ）と同じものであり、図９において（ｂ）は（ａ）中のＡ−Ａ断面図である。最終的な接触域におけるワイヤＪ２の中心部Ｊ４は、上記図８（ｂ）にて述べた様に、加圧によって最初からつぶれているので、接合されず、超音波エネルギーによりつぶれていった周縁部Ｊ６のみが接合する。そのため、図９（ａ）及び（ｂ）の各下側部分に示す様に、上記接触域界面でみた接合部領域Ｊ５はドーナツ状となる。
【０００６】
【発明が解決しようとする課題】
ところで、パワーデバイス（Ｓｉチップ）においては、大電流を流すことによってＳｉチップが発熱するのであるが、ＡｌとＳｉのように熱膨張係数の大きく異なる材料を加熱すると熱応力が発生する。よって、冷熱環境下、ワイヤ（Ａｌ）とパワーデバイス（Ｓｉ）との接合部においては、両者の熱膨張係数差によって、上記熱応力が繰り返し発生し、該接合部にクラックが生じ破壊するという問題がある。
【０００７】
図１０は上記図８（ｃ）及び図９に示した最終的な接合状態における上記熱応力の大きさの分布を示すもので、接触域におけるワイヤＪ２の周縁部（ボンディング周縁部）Ｊ６が大きく、中心部Ｊ４が小さい。そのため、中心部Ｊ４を接合することが冷熱耐久信頼性向上のため、重要である。
【０００８】
現在、ボンディング中に超音波出力と加圧力を制御できるボンダ（加圧・出力制御ボンダ）がある。本発明者は、この加圧・出力制御ボンダ用いて、初期加圧を下げることで、初期のワイヤつぶれを小さくし、ワイヤと被接合材の接触域において中心部から周縁部にかけて接合することを試みた。
【０００９】
しかし、初期加圧を下げると、ボンディング時のツールの振幅により、ワイヤがツールから逃げるため、ツールによる安定したワイヤの拘束が困難であり、接合を開始させるための凝着核ができない。これは、初期加圧を下げることでワイヤの変形が小さく、ワイヤとツールが接する部分（上記図８中の太線Ｊ７に図示）の面積が小さくなるため、ワイヤ／ツール間の摩擦力が不十分となることによる。それにより、ワイヤとツールとの接触部が滑ってワイヤがツールのウェッジ部から外れたり、ワイヤとツールの接触部が滑ってツールの振幅（振動）が十分にワイヤに伝達しない。
【００１０】
そのため、加圧・出力制御ボンダを使用しても、制御無しのボンダ（加圧一定ボンダ）に比べ、初期出力を下げることで、上記図９に示したようなドーナツ状の接合部領域Ｊ５に比べて、やや内側から接合するものの、中心部まで接合ができず信頼性の大幅な向上は難しい。特に、φ４００μｍ、φ５００μｍなどの極太ワイヤでは耐久信頼性が劣っている。
【００１１】
そこで、本発明は上記問題に鑑み、ウェッジボンディングによる電子部品の接続方法において、ワイヤとツールとの間の摩擦力を大きくすることにより、初期加圧を下げても、ボンディングツールの振動時にワイヤがツールから逃げないようにすることを目的とする。
【００１２】
上記目的を達成するため、請求項１記載の発明では、ウェッジボンディングによる電子部品の接続方法において、ワイヤ（２０）よりも硬い部材よりなる治具（３０）を用意し、ツール（１０）としてＶ溝形状もしくはＵ溝形状をなすものを用い、この溝に拘束されるように該ツールに接触して支持された該ワイヤを、該治具に押し当てることにより、該ワイヤと該ツールとの接触面積を増大させた後、該ワイヤを電子部品（１）に押し当て、該ツールを介して加圧しながら振動させることにより、該ワイヤを該電子部品に接続し、続いて、該ワイヤを相手側部材（４）まで引き回し、該ツールを介して加圧しながら振動させることにより、該ワイヤを該相手側部材に接続するようにしたことを特徴としている。
【００１３】
本接続方法によれば、予め電子部品とワイヤとのボンディング前に、ワイヤとツールとの接触面積を増大させることで、ワイヤとツールとの摩擦力を大きくすることができ、初期加圧を下げても、ボンディングツールの振動時にワイヤがツールから逃げないようにすることができる。
【００１４】
そして、電子部品とワイヤとのワイヤボンディングにおいて、初期加圧を下げて初期のワイヤつぶれを小さくできるため、ワイヤと電子部品との接触域において中心部から周縁部にかけて接合することが出来る。そして、次工程にて、電子部品と接続されたワイヤを相手側部材にウェッジボンディングすることにより、電子部品と相手側部材とが結線される。
【００１５】
このように、本発明によれば、電子部品（パワーデバイス等）とワイヤとの熱膨張係数差の大きい場合でも、両者は接触域において中心部から周縁部にかけて接合されているので、ワイヤ接合部を耐久信頼性の優れたものとできる。
【００１６】
また、請求項２記載の発明のように、請求項１記載の接続方法に用いる治具（３０）として、ワイヤ（２０）が押し当てられる部位に、押し当てられたワイヤを支持する溝部（３１）が形成されたものを用い、ワイヤの固定を行うようにすることができる。
【００１７】
さらに、上記溝部（３１）は、請求項３記載の発明のように、底部（３２）には押し当てられたワイヤ（２０）が接することなく、側壁面（３３）にて該押し当てられたワイヤを支持する形状を有するものとできる。それによって、ワイヤを治具に押し当てたときに、ワイヤにおける電子部品との接触部分のつぶれを抑えることができる。
【００１８】
なお、上記各手段の括弧内の符号は、後述する実施形態に記載の具体的手段との対応関係を示す一例である。
【００１９】
【発明の実施の形態】
以下、本発明を図に示す実施形態について説明する。図１は本実施形態に係る電子部品の接続方法による最終的な接続形態を示す概略断面図である。まず、図１において、１は電子部品としてのＳｉチップよりなるパワーデバイス（ＩＧＢＴ素子やパワーＭＯＳ素子等）であり、２はセラミック基板等の配線基板である。
【００２０】
パワーデバイス１は、配線基板２の一面上にＣｕやＮｉ等よりなる金属導体３を介して搭載されている。この金属導体３は配線基板２の配線部を構成するものである。また、配線基板２の一面上には、相手側部材としてのＣｕやＮｉ等よりなるターミナル４が金属導体３と絶縁して形成されている。
【００２１】
そして、上記パワーデバイス１に形成された図示しないアルミニウム（Ａｌ）等よりなる電極パッドとターミナル４とは、ウェッジボンディングにより形成されたワイヤ５にて結線されている。このワイヤ５は主として、φ２５０μｍ〜φ５００μｍ、あるいはφ５００μｍ以上の太線が適用され、その材質は９９．９９％以上のＡｌを用いるが、Ａｌ以外の微量の添加元素が含まれていることもある。
【００２２】
次に、図２〜図４を参照して、本実施形態に係る接続方法を、工程順に述べていく。図２は本接続方法の工程図を示す概略断面図、図３は本製造方法における加圧・超音波振幅の様子を示す説明図、図４はボンディング時における加圧・超音波出力のプロフィールを示す図である。
【００２３】
図２及び図３において、１０は加圧・出力制御ボンダにおけるボンディングツールであり、タングステンカーバイド（ＷＣ）等よりなる。また、２０は上記ワイヤ５を形成するためのボンディングワイヤである。ツール１０の先端部のウェッジで、ボンディングワイヤ２０を拘束するが、ツール１０の先端部形状はＶ溝、Ｕ溝どちらでも構わない（図ではＶ溝形状としている）。ツール１０は、圧電セラミックス等の振動子により超音波振動するトランスジューサ（図示せず）に取り付けられており、該トランスジューサの動きにより、ツール１０の加圧制御や振動制御を行うようになっている。
【００２４】
３０はボンディング前処理用治具（本発明でいう治具、以下、単に治具という）である。治具３０の表面には、溝（本発明でいう溝部）３１が切ってあり、その溝３１にボンディングワイヤ２０を入れ、該ワイヤ２０を押さえつけて変形できるようになっている。ここで、図５は治具３０の斜視図であり、対応するツール１０及びボンディングワイヤ２０も示してある。
【００２５】
溝３１の形状は特に限定しないが（図ではＶ溝で示してある）、溝３１の幅Ｗは、ワイヤ２０の径よりも小さく、溝の深さＤは、ワイヤ２０がツール１０により押しつけられたときにワイヤ２０が溝３１の底部３２に接しない深さがあり、溝３１の長さＬは、ツール１０のワイヤ押さえ長さよりも長いことが必要である。このような溝３１の形状とすることで、ワイヤ２０が押しつけられたときに、溝３１の底部３２にはワイヤ２０が接することなく、溝３１の側壁面３３にてワイヤ２０を支持するようになっている。
【００２６】
また、ワイヤ２０を押しつけたとき、ツール１０のフラット部が治具３０に接しないことも必要である。これは、上記のようにツール１０がＷＣ等の固いけれど脆い材料よりなるため、ツール１０が治具３０に接することでツール１０が破損する恐れがあるためである。よって、使用するワイヤ径、ボンディングツール形状によって、治具３０の形状は異なる。また治具３０の材質は、この治具３０がワイヤ２０を変形させるためのものであるため、ワイヤ２０よりも固く、靱性が高くなくてはならない。一例として工具鋼がある。
【００２７】
なお、パワーデバイス１、このパワーデバイス１と結線されるターミナル４、及び、治具３０は、ボンディングツール１０が動く範囲にあることが必要である。このとき、ツール１０が動いて上記部材１、４、３０の上に来ても良いし、上記部材１、４、３０が例えばＸ−Ｙテーブル等により動かされて、ツール１０の下に来るようにしても良い。
【００２８】
そして、本接続方法においては、まず、図２（ａ）に示す様に、治具３０はパワーデバイス１の近傍に配置するとともに、ボンディングワイヤ２０を接触支持して拘束したツール１０を治具３０の溝部３１の上に位置させる。次に、図２（ｂ）及び図３（ａ）に示す工程を行う。なお、図３（ａ）は図２（ｂ）を横方向からみたものに相当する。この工程は、ツール１０に接触して支持されたボンディングワイヤ２０を治具３０の溝部３１に押し当てることにより、該ワイヤ２０とツール１０との接触面積を増大させる工程である。
【００２９】
ツール１０を介しボンディングワイヤ２０を加圧して溝部３１に押し当てると、溝部３１において、ワイヤ２０が変形し、ワイヤ２０とツール１０間の接触面積Ｍ１が広がる。また、ワイヤ２０は溝３１の底部３２と接しないため、ワイヤ２０の下部（ツール１０との接触部とは反対側の部位）は変形しない。また、このとき、ワイヤ２０には超音波出力を加えない。そのため、ワイヤ２０と治具３０間で接合することはない。この工程における加圧力は、ボンディングするワイヤ径に応じて決まるが、例えば上記接触面積Ｍ１を大きくするためボンディングで使用する加圧力以上とできる。
【００３０】
次に、図２（ｃ）及び図３（ｂ）、（ｃ）に示す工程を行う。ここで図３（ｂ）は図２（ｃ）を横方向からみたものに相当する。この工程は、ボンディングワイヤ２０をパワーデバイス１に押し当て、ツール１０を介して加圧しながら振動させることにより、ワイヤ２０をパワーデバイス１に接続する工程である。具体的には、ツール１０を移動して（あるいは、パワーデバイス１及び治具３０が移動して）、パワーデバイス１における上記電極パッドにボンディングワイヤ２０を加圧しつつ押し当てる。
【００３１】
また、この工程における加圧・超音波出力のプロフィールは、図４のように行う。つまり、まず、超音波出力を加えない状態で、ボンディングワイヤ２０を加圧しながらパワーデバイス１に押し当てるのであるが、その加圧力は小さく、ワイヤ２０とパワーデバイス１との接触面積Ｍ２は非常に小さくなる。この状態で、図４に示す様に、超音波出力を一定値まで上げる。
【００３２】
このとき、ツール１０とボンディングワイヤ２０との接触面積Ｍ１は大きいため、超音波出力を加えても、ツール／ワイヤ間の摩擦力によりワイヤ２０が拘束されることにより、ワイヤ２０が不安定になることがない。この超音波エネルギーにより、上記したワイヤ２０とパワーデバイス１との小さな接触部（接触面積Ｍ２で示した部分）に凝着核ができ、小さな接合部（初期接合部）となる。
【００３３】
そして、図４に示す様に、超音波出力を一定としたまま、加圧力を上げていくと、振動するワイヤ２０が徐々に押しつぶされてパワーデバイス１の上記電極パッドと接触していくため、ワイヤ２０と上記電極パッドとが溶け合うことにより、初期接合部を起点としてその周囲に接合部が広がっていく。こうして、最終的には、ワイヤ２０とパワーデバイス１との接触域において中心部から周縁部にかけて接合された状態となり、ワイヤ２０のパワーデバイス１への接続が完了する。
【００３４】
なお、図３（ｂ）は、接合初期の状態における加圧・超音波振幅の様子を示すものであるが、加圧及び接合部が小さく、パワーデバイス１へのワイヤ２０の固定が十分でないため、超音波振幅は大きい。一方、図３（ｃ）は、接合後期の状態における加圧・超音波振幅の様子を示すものであるが、加圧が大きく、接合部も広がっており、パワーデバイス１へのワイヤ２０の固定が十分なため、超音波振幅は小さい。
【００３５】
次に、ツール１０を移動させて、ボンディングワイヤ２０を相手側部材であるターミナル４まで引き回し、ツール１０を介して加圧しながら振動させることにより、ワイヤ２０をターミナル４に接続する工程を行う。このボンディングでは、ツール／ワイヤ間の接触面積が小さく、摩擦力を期待できないため、加圧力を下げることはできず、上記図８に示したような従来のウェッジボンディング方法を行う。
【００３６】
しかし、ＣｕやＮｉ等よりなるターミナル４とＡｌ等よりなるワイヤ２０との熱膨張係数差が、パワーデバイス（Ｓｉ）１とワイヤ２０ほど大きく違わないため、中心部の接合性が悪くとも、冷熱耐久信頼性が下がることはない。つまり、図１に示す接続構造の耐久信頼性は、ワイヤ５におけるパワーデバイス１側の接続部で決まる。
【００３７】
上記した本実施形態の接続方法をまとめると、まず、前処理用治具３０にワイヤ２０を当ててワイヤ／ツール間の接触面積Ｍ１を大きくし、パワーデバイス１と１ｓｔボンディングを行い、２ｎｄボンディングにてターミナル４と接続することで、パワーデバイス１とターミナル４との間の結線ができる。
【００３８】
このように、本実施形態の接続方法によれば、予めパワーデバイス（電子部品）１とワイヤ２０とのボンディング前に、ワイヤ２０とツール１０との接触面積Ｍ１を増大させることで、ワイヤ２０とツール１０との摩擦力を大きくすることができ、初期加圧を下げても、ボンディングツール１０の振動時にワイヤ２０がツール１０から逃げないようにすることができる。
【００３９】
そして、パワーデバイス１とワイヤ２０とのワイヤボンディングにおいて、初期加圧を下げることができ、初期のワイヤつぶれを小さくしてワイヤ２０とパワーデバイス１との接触域において中心部から周縁部にかけて接合することが出来る。そのため、熱膨張係数差の大きいパワーデバイス１とワイヤ２０との接続において、ワイヤ接合部を耐久信頼性の優れたものとできる。そして、上記した従来の接合状態（周縁部のみが接合したもの）に比べて、ワイヤが剥離するまでの寿命を長くすることが出来る。
【００４０】
また、本実施形態の接続方法によれば、治具３０の溝部３１の形状を、底部３２には押し当てられたワイヤ２０が接することなく、側壁面３３にて押し当てられたワイヤ２０を支持するものとしている。そのため、ワイヤ２０をパワーデバイス１に押し当てたときに、ワイヤ２０におけるパワーデバイス１との接触部分のつぶれを抑え、初期接合部の接触面積Ｍ２（図２（ｃ）参照）を小さくでき、結果的に、ワイヤ２０とパワーデバイス１との接触域において中心部から周縁部までが接合された状態を効果的に実現できる。
（他の実施形態）
なお、上記実施形態では加圧・出力制御ボンダを使用して、図４に示すプロフィール、即ち加圧力のみ制御して超音波出力の制御をしないものとしたが、図６に示す様に、加圧力及び超音波出力共に制御するものでもよい。図６では、加圧力の上昇とともに、超音波出力も伴って上昇させている。これにより、低加圧時に、大きな超音波出力を加えてしまうことがないため、図３（ｂ）に示したように、超音波振幅の大きな状態となることを抑制できる。
【００４１】
そのため、ワイヤ２０がパワーデバイス１上を擦ることで、パワーデバイス１に加わるダメージ（例えばボンディング部分の下のトランジスタが破壊すること等）を抑制でき、不良率が低減できる。また、加圧力に応じて適性な超音波出力を付与しているため、より広い接合部領域（ボンディング面積）を実現でき、冷熱耐久性をより向上させることができる。ちなみに、図７に、加圧・出力一定一定ボンダを使用した加圧力及び超音波出力のプロフィールの例を示す。
【００４２】
また、治具３０においては溝３１の代わりに、治具３０の表面に突出部を設け、この突出部にて、押し当てられたワイヤ２０を支持し、ワイヤ２０の下部（ツール１０との接触部とは反対側の部位）の変形防止を行うようにしても良い。この場合でも、ワイヤ２０とツール１０との接触面積Ｍ１は大きくなるため、従来のウェッジボンディングに比べて信頼性の高いワイヤと電子部品との接合が得られる。
【００４３】
以上述べてきたように、本発明は、電子部品と相手側部材とをウェッジボンディングで結線する電子部品の接続方法において、使用環境の過酷化（大電流化等）に伴う電子部品とボンディングワイヤとの接合部の信頼性向上を目的としたものであり、上記治具を用いてボンディング用のツールとワイヤとの接触面積を増大させることで、結果的に、この目的を達成するものである。
【図面の簡単な説明】
【図１】本発明の実施形態に係る電子部品の接続形態を示す概略断面図である。
【図２】本発明の実施形態に係る電子部品の接続方法を示す工程図である。
【図３】上記接続方法における加圧・超音波振幅の様子を示す説明図である。
【図４】上記実施形態における加圧・超音波出力のプロフィールの一例を示す図である。
【図５】上記接続方法に用いる治具の斜視図である。
【図６】本発明の他の実施形態における加圧・超音波出力のプロフィールの一例を示す図である。
【図７】加圧・出力一定ボンダにおける加圧・超音波出力のプロフィールの例を示す図である。
【図８】従来のウェッジボンディング方法を示す概略断面図である。
【図９】図８のウェッジボンディング方法による最終的な接合状態を示す図である。
【図１０】図９に示した最終的な接合状態における熱応力の大きさの分布を示す図である。
【符号の説明】
１…パワーデバイス、４…配線基板のターミナル、１０…ボンディングツール、２０…ボンディングワイヤ、３０…ボンディング前処理用治具、３１…溝、
３２…溝の底部、３３…溝の側壁面。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to the connection of an electronic component in which an electronic component and a mating member are bonded by vibrating a wire supported in contact with a tool for wire bonding while applying pressure through the tool. The present invention relates to a method for connecting electronic components by so-called wedge bonding.
[0002]
[Prior art]
This type of connection method using wedge bonding generally uses a power device (IGBT element, power MOS element, etc.) made of a Si chip as an electronic component, and a terminal made of copper (Cu) on a wiring board as a counterpart member. Etc. are used. Then, an electrode made of aluminum (Al) or the like on the Si chip and the terminal are connected by a wire made of Al or the like.
[0003]
A conventional wedge bonding method is shown in the schematic cross-sectional view of FIG. First, as shown in FIG. 8 (a), a wire J2 contacted and supported by a bonding tool J1 is brought into contact with a material to be joined (for example, an electrode on a Si chip) J3. Next, as shown in FIG. 8 (b), the wire J2 is bonded to the material to be bonded J3 through this tool J1 while being pressed and pressed at a constant pressure by ultrasonic vibration. The final bonded state is finally shown in FIG.
[0004]
Here, in order to rub the wire J2 and the material J3 to be joined, it is necessary that the tool J1 and the wire J2 are firmly bound to each other, and the pressing force is increased for restraining. With the applied pressure, as shown in FIG. 8B, the central portion J4 of the wire J2 is crushed, and the contact area between the wire J2 and the material to be joined J3 is increased. And if the tool J1 vibrates, the wire J2 restrained by the tool J1 will also vibrate, and it will join outside from the outer peripheral part of a contact area.
[0005]
A more detailed final bonding state is shown in FIG. In addition, the upper part of Fig.9 (a) is the same as FIG.8 (c), (b) is AA sectional drawing in (a) in FIG. As described in FIG. 8B, the center portion J4 of the wire J2 in the final contact area is crushed from the beginning due to the pressurization, so that the peripheral edge is crushed by the ultrasonic energy without being joined. Only the part J6 is joined. Therefore, as shown in each lower part of FIGS. 9A and 9B, the joint region J5 viewed at the contact region interface has a donut shape.
[0006]
[Problems to be solved by the invention]
By the way, in a power device (Si chip), a Si chip generates heat when a large current is passed. However, when a material having a large coefficient of thermal expansion such as Al and Si is heated, thermal stress is generated. Therefore, in the joint between the wire (Al) and the power device (Si) in the cold environment, the thermal stress is repeatedly generated due to the difference in thermal expansion coefficient between the two, and the joint is cracked and broken. There is.
[0007]
FIG. 10 shows the distribution of the magnitude of the thermal stress in the final bonded state shown in FIGS. 8 (c) and 9, wherein the peripheral portion (bonding peripheral portion) J6 of the wire J2 in the contact area is large. The center portion J4 is small. For this reason, it is important to join the center portion J4 in order to improve the reliability of thermal durability.
[0008]
Currently, there is a bonder (pressure / output control bonder) that can control ultrasonic output and pressure during bonding. The present inventor uses the pressurization / output control bonder to lower the initial pressurization, thereby reducing the initial wire crushing, and joining from the center part to the peripheral part in the contact area between the wire and the material to be joined. Tried.
[0009]
However, when the initial pressurization is lowered, the wire escapes from the tool due to the amplitude of the tool during bonding, so that it is difficult to stably restrain the wire by the tool, and an adhesion nucleus for starting the bonding cannot be performed. This is because the deformation of the wire is small by lowering the initial pressure, and the area where the wire and the tool come into contact (shown by the thick line J7 in FIG. 8) is small, so the friction force between the wire and the tool is insufficient. By becoming. Accordingly, the contact portion between the wire and the tool slips and the wire comes off from the wedge portion of the tool, or the contact portion between the wire and the tool slips and the amplitude (vibration) of the tool is not sufficiently transmitted to the wire.
[0010]
Therefore, even if a pressure / output control bonder is used, the initial output is lowered compared to a bonder without control (a constant pressure bonder), so that the donut-shaped joint region J5 as shown in FIG. In comparison, although it is joined from the inside, it is difficult to join up to the center and it is difficult to significantly improve the reliability. In particular, extremely thick wires such as φ400 μm and φ500 μm have poor durability reliability.
[0011]
Therefore, in view of the above problems, the present invention provides a method for connecting electronic components by wedge bonding, and by increasing the frictional force between the wire and the tool, even when the initial pressurization is lowered, the wire is The purpose is not to escape from the tool.
[0012]
To achieve the above object, V in the first aspect of the present invention, in the method for connecting electronic components by wedge bonding, providing a wire jig made of harder member than the (20) (30), as a tool (10) using those forms a groove shape or U-groove shape, the wires supported in contact with the tool to be constrained to the groove, by pressing the jig, contact between the wire and the tool After increasing the area, the wire is pressed against the electronic component (1) and vibrated while being pressed through the tool to connect the wire to the electronic component, and then the wire is connected to the other side. It is characterized in that the wire is connected to the mating member by being routed to the member (4) and vibrating while being pressed through the tool.
[0013]
According to this connection method, by increasing the contact area between the wire and the tool before bonding the electronic component and the wire in advance, the frictional force between the wire and the tool can be increased, and the initial pressurization can be reduced. However, the wire can be prevented from escaping from the tool when the bonding tool vibrates.
[0014]
In the wire bonding between the electronic component and the wire, the initial pressurization can be lowered to reduce the initial wire crushing, so that the bonding can be performed from the center portion to the peripheral portion in the contact area between the wire and the electronic component. Then, in the next step, the electronic component and the counterpart member are connected by wedge-bonding the wire connected to the electronic component to the counterpart member.
[0015]
Thus, according to the present invention, even when the difference in thermal expansion coefficient between the electronic component (power device or the like) and the wire is large, both are joined from the center portion to the peripheral portion in the contact area. Can be made to have excellent durability and reliability.
[0016]
Further, as in the invention according to claim 2, as the jig (30) used in the connection method according to claim 1, a groove portion (31) for supporting the pressed wire at a portion to which the wire (20) is pressed. ) Can be used to fix the wire.
[0017]
Further, as in the invention described in claim 3, the groove (31) is pressed against the bottom (32) at the side wall surface (33) without contacting the pressed wire (20). It can have a shape that supports the wire. Thereby, when the wire is pressed against the jig, the contact portion of the wire with the electronic component can be prevented from being crushed.
[0018]
In addition, the code | symbol in the bracket | parenthesis of each said means is an example which shows a corresponding relationship with the specific means as described in embodiment mentioned later.
[0019]
DETAILED DESCRIPTION OF THE INVENTION
DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments shown in the drawings will be described below. FIG. 1 is a schematic cross-sectional view showing a final connection form by the electronic component connection method according to the present embodiment. First, in FIG. 1, 1 is a power device (IGBT element, power MOS element or the like) made of a Si chip as an electronic component, and 2 is a wiring substrate such as a ceramic substrate.
[0020]
The power device 1 is mounted on one surface of the wiring board 2 via a metal conductor 3 made of Cu, Ni, or the like. The metal conductor 3 constitutes a wiring portion of the wiring board 2. Further, a terminal 4 made of Cu, Ni, or the like as a counterpart member is formed on one surface of the wiring board 2 so as to be insulated from the metal conductor 3.
[0021]
An electrode pad made of aluminum (Al) (not shown) formed on the power device 1 and the terminal 4 are connected by a wire 5 formed by wedge bonding. The wire 5 is mainly a thick wire of φ250 μm to φ500 μm, or φ500 μm or more, and its material uses 99.99% or more of Al, but may contain a trace amount of additive elements other than Al.
[0022]
Next, the connection method according to the present embodiment will be described in the order of steps with reference to FIGS. FIG. 2 is a schematic cross-sectional view showing a process diagram of this connection method, FIG. 3 is an explanatory view showing the state of pressure / ultrasonic amplitude in this manufacturing method, and FIG. 4 is a profile of pressure / ultrasonic output during bonding. FIG.
[0023]
2 and 3, reference numeral 10 denotes a bonding tool in a pressure / output control bonder, which is made of tungsten carbide (WC) or the like. Reference numeral 20 denotes a bonding wire for forming the wire 5. The bonding wire 20 is restrained by the wedge at the tip of the tool 10, but the tip of the tool 10 may be either a V-groove or a U-groove (in the figure, it is a V-groove). The tool 10 is attached to a transducer (not shown) that is ultrasonically vibrated by a vibrator such as piezoelectric ceramics, and pressurization control and vibration control of the tool 10 are performed by movement of the transducer.
[0024]
Reference numeral 30 denotes a bonding pretreatment jig (a jig referred to in the present invention, hereinafter simply referred to as a jig). A groove (groove portion referred to in the present invention) 31 is cut on the surface of the jig 30, and the bonding wire 20 is inserted into the groove 31 so that the wire 20 can be pressed to be deformed. Here, FIG. 5 is a perspective view of the jig 30, and the corresponding tool 10 and bonding wire 20 are also shown.
[0025]
The shape of the groove 31 is not particularly limited (shown as a V groove in the figure), but the width W of the groove 31 is smaller than the diameter of the wire 20, and the depth D of the groove is pressed by the tool 10 by the wire 20. The wire 20 has a depth that does not contact the bottom 32 of the groove 31, and the length L of the groove 31 needs to be longer than the wire pressing length of the tool 10. By adopting such a shape of the groove 31, when the wire 20 is pressed, the wire 20 is supported on the side wall surface 33 of the groove 31 without contacting the bottom portion 32 of the groove 31. It has become.
[0026]
It is also necessary that the flat portion of the tool 10 does not contact the jig 30 when the wire 20 is pressed. This is because the tool 10 is made of a hard but brittle material such as WC as described above, and the tool 10 may be damaged when it contacts the jig 30. Therefore, the shape of the jig 30 differs depending on the wire diameter and bonding tool shape to be used. The material of the jig 30 is for the jig 30 to deform the wire 20 and therefore must be harder and tougher than the wire 20. An example is tool steel.
[0027]
The power device 1, the terminal 4 connected to the power device 1, and the jig 30 need to be within a range in which the bonding tool 10 can move. At this time, the tool 10 may move and come on the members 1, 4, 30, or the members 1, 4, 30 may be moved by, for example, an XY table to come under the tool 10. Anyway.
[0028]
In this connection method, first, as shown in FIG. 2A, the jig 30 is disposed in the vicinity of the power device 1, and the tool 10 in which the bonding wire 20 is supported and restrained is fixed to the jig 30. It is located on the groove part 31 of this. Next, the steps shown in FIGS. 2B and 3A are performed. FIG. 3A corresponds to FIG. 2B viewed from the lateral direction. This step is a step of increasing the contact area between the wire 20 and the tool 10 by pressing the bonding wire 20 supported in contact with the tool 10 against the groove 31 of the jig 30.
[0029]
When the bonding wire 20 is pressed through the tool 10 and pressed against the groove 31, the wire 20 is deformed in the groove 31 and the contact area M <b> 1 between the wire 20 and the tool 10 increases. Further, since the wire 20 does not contact the bottom portion 32 of the groove 31, the lower portion of the wire 20 (the portion opposite to the contact portion with the tool 10) is not deformed. At this time, no ultrasonic output is applied to the wire 20. Therefore, the wire 20 and the jig 30 are not joined. The applied pressure in this step is determined according to the wire diameter to be bonded, but can be, for example, greater than the applied pressure used for bonding in order to increase the contact area M1.
[0030]
Next, the steps shown in FIGS. 2C, 3B, and 3C are performed. Here, FIG. 3B corresponds to FIG. 2C viewed from the lateral direction. This step is a step of connecting the wire 20 to the power device 1 by pressing the bonding wire 20 against the power device 1 and vibrating while pressing with the tool 10. Specifically, the tool 10 is moved (or the power device 1 and the jig 30 are moved), and the bonding wire 20 is pressed against the electrode pad in the power device 1 while being pressed.
[0031]
The profile of pressurization / ultrasonic output in this step is as shown in FIG. That is, first, the bonding wire 20 is pressed against the power device 1 without applying an ultrasonic output, but the pressure is small and the contact area M2 between the wire 20 and the power device 1 is very high. Get smaller. In this state, as shown in FIG. 4, the ultrasonic output is increased to a certain value.
[0032]
At this time, since the contact area M1 between the tool 10 and the bonding wire 20 is large, even if an ultrasonic output is applied, the wire 20 becomes unstable due to the wire 20 being restrained by the frictional force between the tool and the wire. There is nothing. Due to this ultrasonic energy, adhesion nuclei are formed at the small contact portion (the portion indicated by the contact area M2) between the wire 20 and the power device 1, and a small joint portion (initial joint portion) is formed.
[0033]
Then, as shown in FIG. 4, when the pressure is increased while the ultrasonic output is kept constant, the vibrating wire 20 is gradually crushed and comes into contact with the electrode pad of the power device 1. When the wire 20 and the electrode pad are melted, the joint portion spreads around the initial joint portion. In this way, finally, in the contact area between the wire 20 and the power device 1, it is joined from the center portion to the peripheral portion, and the connection of the wire 20 to the power device 1 is completed.
[0034]
FIG. 3B shows the state of pressurization / ultrasonic amplitude in the initial bonding state, but the pressurization and the joining portion are small, and the fixing of the wire 20 to the power device 1 is not sufficient. The ultrasonic amplitude is large. On the other hand, FIG. 3 (c) shows the state of pressurization / ultrasonic amplitude in the state of the later stage of joining, but the pressurization is large and the joint is also widened, and the wire 20 is fixed to the power device 1. Is sufficient, the ultrasonic amplitude is small.
[0035]
Next, the process of connecting the wire 20 to the terminal 4 is performed by moving the tool 10, drawing the bonding wire 20 to the terminal 4, which is the counterpart member, and oscillating while pressing through the tool 10. In this bonding, since the contact area between the tool / wire is small and a frictional force cannot be expected, the applied pressure cannot be lowered, and the conventional wedge bonding method as shown in FIG. 8 is performed.
[0036]
However, since the difference in thermal expansion coefficient between the terminal 4 made of Cu, Ni or the like and the wire 20 made of Al or the like is not so different from that of the power device (Si) 1 and the wire 20, The durability and reliability will not be reduced. That is, the durability reliability of the connection structure shown in FIG. 1 is determined by the connection portion of the wire 5 on the power device 1 side.
[0037]
To summarize the connection method of this embodiment described above, first, the wire 20 is applied to the pretreatment jig 30 to increase the contact area M1 between the wire / tool, the 1st bonding is performed with the power device 1, and the 2nd bonding is performed. By connecting to the terminal 4, the power device 1 and the terminal 4 can be connected.
[0038]
As described above, according to the connection method of the present embodiment, before the power device (electronic component) 1 and the wire 20 are bonded to each other, the contact area M1 between the wire 20 and the tool 10 is increased in advance. The frictional force with the tool 10 can be increased, and the wire 20 can be prevented from escaping from the tool 10 when the bonding tool 10 vibrates even if the initial pressure is lowered.
[0039]
In the wire bonding between the power device 1 and the wire 20, the initial pressurization can be lowered, and the initial wire crushing can be reduced to join from the center portion to the peripheral portion in the contact area between the wire 20 and the power device 1. I can do it. Therefore, in the connection between the power device 1 having a large difference in thermal expansion coefficient and the wire 20, the wire bonding portion can be made excellent in durability reliability. And the lifetime until a wire peels can be lengthened compared with the above-mentioned conventional joining state (what joined only the peripheral part).
[0040]
Further, according to the connection method of the present embodiment, the shape of the groove portion 31 of the jig 30 is supported so that the pressed wire 20 is supported by the side wall surface 33 without contacting the pressed wire 20 to the bottom portion 32. I am going to do it. Therefore, when the wire 20 is pressed against the power device 1, the contact portion of the wire 20 with the power device 1 can be prevented from being crushed, and the contact area M2 (see FIG. 2C) of the initial bonded portion can be reduced. In particular, it is possible to effectively realize a state where the center part to the peripheral part are joined in the contact area between the wire 20 and the power device 1.
(Other embodiments)
In the above embodiment, the pressurization / output control bonder is used to control only the profile shown in FIG. 4, that is, the pressurizing force, but not the ultrasonic output. However, as shown in FIG. Both pressure and ultrasonic output may be controlled. In FIG. 6, the ultrasonic output is increased along with the increase of the applied pressure. Thereby, since a large ultrasonic output is not added at the time of low pressurization, it can suppress that it becomes a state with a large ultrasonic amplitude as shown in FIG.3 (b).
[0041]
Therefore, the wire 20 rubs over the power device 1 to suppress damage applied to the power device 1 (for example, destruction of the transistor under the bonding portion), and the defect rate can be reduced. In addition, since an appropriate ultrasonic output is applied according to the applied pressure, a wider joint region (bonding area) can be realized, and the thermal durability can be further improved. Incidentally, FIG. 7 shows an example of the profile of the applied pressure and the ultrasonic output using the bonder with constant pressure and output.
[0042]
Further, in the jig 30, instead of the groove 31, a protrusion is provided on the surface of the jig 30, and the pressed wire 20 is supported by this protrusion, and the lower part of the wire 20 (contact with the tool 10). It is also possible to prevent deformation of the part opposite to the part). Even in this case, since the contact area M1 between the wire 20 and the tool 10 is increased, the bonding between the wire and the electronic component is more reliable than the conventional wedge bonding.
[0043]
As described above, the present invention relates to an electronic component connecting method for connecting an electronic component and a counterpart member by wedge bonding, and an electronic component and a bonding wire associated with a severe use environment (such as a large current). The purpose of this is to improve the reliability of the joint part, and by increasing the contact area between the bonding tool and the wire using the jig, this object is achieved.
[Brief description of the drawings]
FIG. 1 is a schematic cross-sectional view showing a connection form of electronic components according to an embodiment of the present invention.
FIG. 2 is a process diagram illustrating a method for connecting electronic components according to an embodiment of the present invention.
FIG. 3 is an explanatory diagram showing a state of pressure and ultrasonic amplitude in the connection method.
FIG. 4 is a diagram showing an example of a pressure / ultrasonic output profile in the embodiment.
FIG. 5 is a perspective view of a jig used in the connection method.
FIG. 6 is a diagram showing an example of a profile of pressure and ultrasonic output in another embodiment of the present invention.
FIG. 7 is a diagram showing an example of a profile of pressurization / ultrasonic output in a pressurization / output constant bonder.
FIG. 8 is a schematic cross-sectional view showing a conventional wedge bonding method.
9 is a diagram showing a final bonding state by the wedge bonding method of FIG. 8. FIG.
10 is a diagram showing a distribution of thermal stress magnitudes in the final bonded state shown in FIG.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Power device, 4 ... Terminal of wiring board, 10 ... Bonding tool, 20 ... Bonding wire, 30 ... Jig for pre-bonding processing, 31 ... Groove,
32 ... bottom of the groove, 33 ... side wall surface of the groove.

Claims (3)

ワイヤボンディング用のツール（１０）に接触して支持されたワイヤ（２０）を、このツールを介して加圧しながら振動させることにより、電子部品（１）と相手側部材（４）とをワイヤボンディングするようにしたウェッジボンディングによる電子部品の接続方法において、
前記ワイヤよりも硬い部材よりなる治具（３０）を用意し、
前記ツールに接触して支持された前記ワイヤを前記治具に押し当てることにより、前記ワイヤと前記ツールとの接触面積を増大させる工程と、
しかる後、前記ワイヤを前記電子部品に押し当て、前記ツールを介して加圧しながら振動させることにより、前記ワイヤを前記電子部品に接続する工程と、
続いて、前記ワイヤを前記相手側部材まで引き回し、前記ツールを介して加圧しながら振動させることにより、前記ワイヤを前記相手側部材に接続する工程と、を備え、
前記各工程は、前記ツールとしてＶ溝形状もしくはＵ溝形状をなすものを用い、この溝に前記ワイヤを拘束して行うことを特徴とする電子部品の接続方法。The wire (20) supported in contact with the wire bonding tool (10) is vibrated while being pressed through the tool, whereby the electronic component (1) and the counterpart member (4) are wire bonded. In the method of connecting electronic components by wedge bonding ,
Prepare a jig (30) made of a material harder than the wire,
Increasing the contact area between the wire and the tool by pressing the wire supported in contact with the tool against the jig;
Thereafter, the step of connecting the wire to the electronic component by pressing the wire against the electronic component and vibrating while pressing through the tool;
Subsequently, the wire is routed to the mating member, and the wire is vibrated while being pressed through the tool, thereby connecting the wire to the mating member .
Each of the steps is performed using a tool having a V-groove shape or a U-groove shape as the tool and restraining the wire in the groove . 前記治具（３０）として、前記ワイヤ（２０）が押し当てられる部位に、前記押し当てられたワイヤを支持する溝部（３１）が形成されたものを用いることを特徴とする請求項１に記載の電子部品の接続方法。The said jig | tool (30) uses the thing by which the groove part (31) which supports the said pressed wire was formed in the site | part where the said wire (20) is pressed. To connect electronic components. 前記溝部（３１）は、底部（３２）には前記押し当てられたワイヤ（２０）が接することなく、側壁面（３３）にて前記押し当てられたワイヤを支持する形状を有するものであることを特徴とする請求項２に記載の電子部品の接続方法。The groove portion (31) has a shape that supports the pressed wire on the side wall surface (33) without contacting the pressed wire (20) to the bottom portion (32). The method for connecting electronic components according to claim 2.
JP16694799A 1999-06-14 1999-06-14 How to connect electronic components Expired - Fee Related JP3972517B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16694799A JP3972517B2 (en) 1999-06-14 1999-06-14 How to connect electronic components

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16694799A JP3972517B2 (en) 1999-06-14 1999-06-14 How to connect electronic components

Publications (2)

Publication Number Publication Date
JP2000357705A JP2000357705A (en) 2000-12-26
JP3972517B2 true JP3972517B2 (en) 2007-09-05

Family

ID=15840592

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16694799A Expired - Fee Related JP3972517B2 (en) 1999-06-14 1999-06-14 How to connect electronic components

Country Status (1)

Country Link
JP (1) JP3972517B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4656921B2 (en) * 2004-11-30 2011-03-23 トヨタ自動車株式会社 Semiconductor element bonding method
JP4795471B2 (en) * 2010-02-19 2011-10-19 新日本製鐵株式会社 Power semiconductor device
JP5581342B2 (en) * 2012-01-11 2014-08-27 本田技研工業株式会社 Wire bonding method
WO2015170738A1 (en) * 2014-05-08 2015-11-12 ローム株式会社 Method for manufacturing wire bonding structure, wire bonding structure, and electronic device

Also Published As

Publication number Publication date
JP2000357705A (en) 2000-12-26

Similar Documents

Publication Publication Date Title
JP5899907B2 (en) Wedge tool for wire bonding, bonding apparatus, wire bonding method, and method for manufacturing semiconductor device
JP6433590B2 (en) Power semiconductor device manufacturing method and power semiconductor device
JP4860128B2 (en) Wire bonding method
JP3981177B2 (en) Method and apparatus for bonding wire interconnects to semiconductor devices
US6523733B2 (en) Controlled attenuation capillary
US20090308911A1 (en) Wire bonding capillary tool having multiple outer steps
US6321969B1 (en) Efficient energy transfer capillary
US20020033408A1 (en) Controlled attenuation capillary with planar surface
JP4941268B2 (en) Wire bonding method and wire bonding apparatus
JP3972517B2 (en) How to connect electronic components
EP2167269B1 (en) Wire bonding capillary tool having multiple outer steps
JP2004140072A (en) Wire bonding method for power semiconductor device
US6520399B1 (en) Thermosonic bonding apparatus, tool, and method
JP4700191B2 (en) How to make electrical connections and contact points
JP3120267B2 (en) Single point bonding method
JP2576428B2 (en) Ultrasonic wire bonding equipment
JP2001068509A (en) Semiconductor mounting method and semiconductor device
JP4041045B2 (en) Ultrasonic flip chip bonding method
JP3202193B2 (en) Wire bonding method
JP3560584B2 (en) Ultrasonic welding equipment
JPH0748507B2 (en) Wire bonding method
JP4683683B2 (en) Ultrasonic welding jig for aluminum wire
JP3087890B2 (en) Bonding apparatus and bonding method
JPS6178128A (en) Bonding tool for manufacture of semiconductor device
JPH10199935A (en) Method of mounting works

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20051208

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20060404

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070403

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070424

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20070522

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20070604

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100622

Year of fee payment: 3

LAPS Cancellation because of no payment of annual fees