US20030006268A1 - Method and device for making a metal bump with an increased height - Google Patents

Method and device for making a metal bump with an increased height Download PDF

Info

Publication number
US20030006268A1
US20030006268A1 US09/987,497 US98749701A US2003006268A1 US 20030006268 A1 US20030006268 A1 US 20030006268A1 US 98749701 A US98749701 A US 98749701A US 2003006268 A1 US2003006268 A1 US 2003006268A1
Authority
US
United States
Prior art keywords
metal
vertical passage
metal wire
chip
tubular member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US09/987,497
Inventor
Wen-Lo Shieh
Ning Huang
Hui-Pin Chen
Hua-Wen Chiang
Chung-Ming Chang
Feng-Chang Tu
Fu-Yu Huang
Hsuan-Jui Chang
Chia-Chieh Hu
Wen-Long Leu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Orient Semiconductor Electronics Ltd
Original Assignee
Orient Semiconductor Electronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Orient Semiconductor Electronics Ltd filed Critical Orient Semiconductor Electronics Ltd
Assigned to ORIENT SEMICONDUCTOR ELECTRONICS LIMITED reassignment ORIENT SEMICONDUCTOR ELECTRONICS LIMITED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHANG, CHUNG MING, CHANG, HSUAN JUI, CHEN, HUI-PIN, CHIANG, HUA WEN, HU, CHIA-CHIEH, HUANG, FU YU, HUANG, NING, LEU, WEN-LONG, SHIEH, WEN LO, TU, FENG CHANG
Publication of US20030006268A1 publication Critical patent/US20030006268A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004Wire welding
    • B23K20/005Capillary welding
    • B23K20/007Ball bonding
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K3/00Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
    • B23K3/06Solder feeding devices; Solder melting pans
    • B23K3/0607Solder feeding devices
    • B23K3/0623Solder feeding devices for shaped solder piece feeding, e.g. preforms, bumps, balls, pellets, droplets
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/11Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05599Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/11Manufacturing methods
    • H01L2224/113Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1133Manufacturing methods by local deposition of the material of the bump connector in solid form
    • H01L2224/1134Stud bumping, i.e. using a wire-bonding apparatus
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
    • H01L2224/78302Shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00013Fully indexed content
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0103Zinc [Zn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01068Erbium [Er]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01327Intermediate phases, i.e. intermetallics compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys

Definitions

  • This invention is related to a method and device for making a metal bump with an increased height and in particular to one which can increase the connection reliability between the metal bump and the chip and enlarging the contact area between the metal bump and the metal or solder ball.
  • FCOB flip chip on board
  • FCIP flip chip in package
  • the capillary tube is still the most commonly used tool for making metal bumps by means of wire bonding.
  • the capillary tube has an inner diameter with an inner wall and has a larger diameter at the upper end than the lower end. A metal wire is inserted into the capillary tube and the lower end of the metal wire is melted to form a ball shaped member by electric spark.
  • the metal bump will have a spherical surface which is insufficient to provide a large contact area and a reliable structure for joining other component parts. Furthermore, the bottom of the metal bump will tend to go beyond the lower opening of the capillary tube under pressure thereby making it difficult to control. Moreover, as the metal bump has a spherical surface, there will not be sufficient area in contact with a metal or solder ball.
  • the metal bump is so short that the metal or solder ball must be soldered to the metal bump at a very low position thereby making it difficult to make the connection between the chip and the fingers of a substrate (or lead frame, chips, metal bumps or the like) and therefore influencing the qualification rate of products.
  • FIG. 2A illustrates the lower end of a metal wire being melted to form a ball shaped member according to the present invention
  • FIG. 2B illustrates how the lower end of the metal wire is joined with the chip according to the present invention
  • FIG. 2C illustrates a metal bump according to the present invention
  • FIGS. 3A and 3B illustrate the connection between the metal bump and the metal or solder ball according to the present invention.
  • FIGS. 4A and 4B illustrate the connection between the metal bump and the metal or solder ball according to the prior art.
  • the metal bump according to the present invention is manufactured by a hard conical tubular member 20 having a vertical passage 21 which is conical in shape and has a larger diameter at the bottom 231 so that the lower portion 23 of the vertical passage 21 is larger than the upper portion 24 of the vertical passage 21 .
  • the vertical passage 21 has an inner surface 22 .
  • a metal wire 3 is inserted into the vertical passage 21 of the hard conical tubular member 20 , with its lower end protruded downwardly out of the vertical passage 21 . Then, the lower end of the metal wire 3 is melted to form a ball 31 .
  • the hard conical tubular member 2 is approached to a raised platform 11 formed on the top of a chip 1 , and a load (not shown) is applied to the metal wire 3 and the metal wire 3 is heated and bonded on the pad of die and ultrasonic energy is applied to deform the melted metal so as to fill up the lower portion 23 of the vertical passage 21 , thereby forming a metal bump 32 on the raised platform 11 of the chip 1 .
  • the hard conical tubular member 2 is removed to pull off the necking position between the metal wire 3 and the top of the metal bump 32 thereby leaving the metal bump 32 on the raised platform 11 of the chip 1 .
  • the metal bump 32 will be formed with a flange 321 at the bottom thereof (see FIG. 2B).
  • the metal bump 32 will have an increased height 232 thereby increasing the joining capability between the metal bump 32 and the raised platform 11 of the semiconductor chip 1 and enlarging the contact area 33 between the metal bump 32 and the metal or solder ball 4 .
  • the metal or solder ball 4 As the metal or solder ball 4 is joined to the metal bump 32 (see FIGS. 3A and 3B), the metal or solder ball 4 will be pressed by a soldering finger 5 thereby deforming the shape of the metal or solder ball 4 and therefore causing the deformed metal or solder ball 4 to go outwardly. In the meantime, the flange 321 of the metal bump 32 will block the metal or solder ball 4 to overflow to the raised platform 11 of the chip 1 . Referring to FIGS.
  • the metal or solder ball 4 ′ will be pressed by a soldering finger 5 ′ when the metal or solder ball 4 ′ is joined to the metal bump 32 ′, thereby deforming the shape of the metal or solder ball 4 ′ and therefore causing the deformed metal or solder ball 4 ′ to overflow to the raised platform 11 ′ of the chip 1 ′.
  • the connection reliability between the chip and the fingers of a substrate or lead frame, chips, metal bumps or the like

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

A device for making metal bumps includes a hard conical tubular member having a vertical passage which is conical in shape and has a larger diameter at a bottom such that a lower portion of the vertical passage is larger than an upper portion of the vertical passage, whereby a metal wire is inserted into the vertical passage of the hard conical tubular member, with a lower end of the metal wire protruded downwardly out of the vertical passage, the lower end of the metal wire is melted to form a ball, the hard conical tubular member is approached to a raised platform formed on a top of a chip, and a load is applied to the metal wire and the metal wire is heated and bonded on the pad of die and ultrasonic energy is applied to deform the melted metal so as to fill up the lower portion of the vertical passage thereby forming a metal bump on the raised platform of the chip, and finally the hard conical tubular member is removed to pull off the necking position between the metal wire and a top of the metal bump thereby leaving the metal bump on the raised platform of the chip.

Description

    BACKGROUND OF THE INVENTION
  • 1. Field of the Invention [0001]
  • This invention is related to a method and device for making a metal bump with an increased height and in particular to one which can increase the connection reliability between the metal bump and the chip and enlarging the contact area between the metal bump and the metal or solder ball. [0002]
  • 2. Description of the Prior Art [0003]
  • Various kinds of methods of making metal bumps on a chip have been developed for flip chip on board (FCOB) technology with a small number of input pins or a small number of Input/Output pins or for flip chip in package (FCIP) with a large number of Input/Output pins, such as evaporation plating, splash plating, electroplating, printing, spraying, and bonding. However, the capillary tube is still the most commonly used tool for making metal bumps by means of wire bonding. The capillary tube has an inner diameter with an inner wall and has a larger diameter at the upper end than the lower end. A metal wire is inserted into the capillary tube and the lower end of the metal wire is melted to form a ball shaped member by electric spark. Then, ultrasonic vibration and pressure deformation processing are applied to the capillary tube to join the inter-metallic compounds between the wire and the chip. When the capillary tube is removed, a metal bump will be formed on the raised platform of the chip. Thereafter, a metal or solder ball is soldered on the metal bump. [0004]
  • However, due to the limitation of the design of the capillary tube, the metal bump will have a spherical surface which is insufficient to provide a large contact area and a reliable structure for joining other component parts. Furthermore, the bottom of the metal bump will tend to go beyond the lower opening of the capillary tube under pressure thereby making it difficult to control. Moreover, as the metal bump has a spherical surface, there will not be sufficient area in contact with a metal or solder ball. In addition, the metal bump is so short that the metal or solder ball must be soldered to the metal bump at a very low position thereby making it difficult to make the connection between the chip and the fingers of a substrate (or lead frame, chips, metal bumps or the like) and therefore influencing the qualification rate of products. [0005]
  • Therefore, it is an object of the present invention to provide a method and device for making a metal bump with an increased height which can obviate and mitigate the above-mentioned drawbacks. [0006]
  • SUMMARY OF THE INVENTION
  • This invention is related to a method and device for making a metal bump with an increased height. [0007]
  • It is the primary object of the present invention to provide a method and device for making metal bumps with an increased height which can increase the joining strength with other metal bumps or pads of a die. [0008]
  • It is another object of the present invention to provide a method and device for making metal bumps with an increased height which can enlarge the contact area with the metal or solder ball. [0009]
  • It is still another object of the present invention to provide a method and device for making metal bumps with an increased height which can increase its reliability in joining with other component parts. [0010]
  • It is a further object of the present invention to provide a method and device for making metal bumps which have an increased height but are small in diameter. [0011]
  • The foregoing object and summary provide only a brief introduction to the present invention. To fully appreciate these and other objects of the present invention as well as the invention itself, all of which will become apparent to those skilled in the art, the following detailed description of the invention and the claims should be read in conjunction with the accompanying drawings. Throughout the specification and drawings identical reference numerals refer to identical or similar parts. [0012]
  • Many other advantages and features of the present invention will become manifest to those versed in the art upon making reference to the detailed description and the accompanying sheets of drawings in which a preferred structural embodiment incorporating the principles of the present invention is shown by way of illustrative example. [0013]
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a sectional view of a capillary tube according to the present invention; [0014]
  • FIG. 2A illustrates the lower end of a metal wire being melted to form a ball shaped member according to the present invention; [0015]
  • FIG. 2B illustrates how the lower end of the metal wire is joined with the chip according to the present invention; [0016]
  • FIG. 2C illustrates a metal bump according to the present invention; [0017]
  • FIGS. 3A and 3B illustrate the connection between the metal bump and the metal or solder ball according to the present invention; and [0018]
  • FIGS. 4A and 4B illustrate the connection between the metal bump and the metal or solder ball according to the prior art. [0019]
  • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
  • For the purpose of promoting an understanding of the principles of the invention, reference will now be made to the embodiment illustrated in the drawings. Specific language will be used to describe same. It will, nevertheless, be understood that no limitation of the scope of the invention is thereby intended, alterations and filter modifications in the illustrated device, and further applications of the principles of the invention as illustrated herein being contemplated as would normally occur to one skilled in the art to which the invention relates. [0020]
  • Referring to the drawings and in particular to FIG. 1 thereof, the metal bump according to the present invention is manufactured by a hard conical [0021] tubular member 20 having a vertical passage 21 which is conical in shape and has a larger diameter at the bottom 231 so that the lower portion 23 of the vertical passage 21 is larger than the upper portion 24 of the vertical passage 21. The vertical passage 21 has an inner surface 22.
  • Referring to FIGS. 2A, 2B and [0022] 2C, a metal wire 3 is inserted into the vertical passage 21 of the hard conical tubular member 20, with its lower end protruded downwardly out of the vertical passage 21. Then, the lower end of the metal wire 3 is melted to form a ball 31. Thereafter, the hard conical tubular member 2 is approached to a raised platform 11 formed on the top of a chip 1, and a load (not shown) is applied to the metal wire 3 and the metal wire 3 is heated and bonded on the pad of die and ultrasonic energy is applied to deform the melted metal so as to fill up the lower portion 23 of the vertical passage 21, thereby forming a metal bump 32 on the raised platform 11 of the chip 1. Thereafter, the hard conical tubular member 2 is removed to pull off the necking position between the metal wire 3 and the top of the metal bump 32 thereby leaving the metal bump 32 on the raised platform 11 of the chip 1. As the bottom opening of the lower portion 23 of the vertical passage 21 is formed with an angle 231, the metal bump 32 will be formed with a flange 321 at the bottom thereof (see FIG. 2B).
  • Accordingly, the [0023] metal bump 32 will have an increased height 232 thereby increasing the joining capability between the metal bump 32 and the raised platform 11 of the semiconductor chip 1 and enlarging the contact area 33 between the metal bump 32 and the metal or solder ball 4.
  • As the metal or solder ball [0024] 4 is joined to the metal bump 32 (see FIGS. 3A and 3B), the metal or solder ball 4 will be pressed by a soldering finger 5 thereby deforming the shape of the metal or solder ball 4 and therefore causing the deformed metal or solder ball 4 to go outwardly. In the meantime, the flange 321 of the metal bump 32 will block the metal or solder ball 4 to overflow to the raised platform 11 of the chip 1. Referring to FIGS. 4A and 4B, according to the prior art, the metal or solder ball 4′ will be pressed by a soldering finger 5′ when the metal or solder ball 4′ is joined to the metal bump 32′, thereby deforming the shape of the metal or solder ball 4′ and therefore causing the deformed metal or solder ball 4′ to overflow to the raised platform 11′ of the chip 1′. Hence, the connection reliability between the chip and the fingers of a substrate (or lead frame, chips, metal bumps or the like) will be decreased and therefore influencing the qualification rate of products.
  • It will be understood that each of the elements described above, or two or more together may also find a useful application in other types of methods differing from the type described above. [0025]
  • While certain novel features of this invention have been shown and described and are pointed out in the annexed claim, it is not intended to be limited to the details above, since it will be understood that various omissions, modifications, substitutions and changes in the forms and details of the device illustrated and in its operation can be made by those skilled in the art without departing in any way from the spirit of the present invention. [0026]

Claims (1)

We claim:
1. A device for making metal bumps comprising a hard conical tubular member having a vertical passage which is conical in shape and has a larger diameter at a bottom such that a lower portion of said vertical passage is larger than an upper portion of said vertical passage, whereby a metal wire is inserted into said vertical passage of said hard conical tubular member, with a lower end of said metal wire protruded downwardly out of said vertical passage, said lower end of said metal wire is melted to form a ball, said hard conical tubular member is approached to a raised platform formed on a top of a chip, and a load is applied to said metal wire and said metal wire is heated and bonded on the pad of die and ultrasonic energy is applied to deform said melted metal so as to fill up said lower portion of said vertical passage thereby forming a metal bump on said raised platform of said chip, and finally said hard conical tubular member is removed to pull off the necking position between said metal wire and a top of said metal bump thereby leaving said metal bump on said raised platform of said chip.
US09/987,497 2001-05-31 2001-11-15 Method and device for making a metal bump with an increased height Abandoned US20030006268A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW90113434A TW515067B (en) 2001-05-31 2001-05-31 Metal bump having higher pillar and the fabricated device thereof
TW090113434A01 2001-07-09

Publications (1)

Publication Number Publication Date
US20030006268A1 true US20030006268A1 (en) 2003-01-09

Family

ID=21678425

Family Applications (2)

Application Number Title Priority Date Filing Date
US09/987,497 Abandoned US20030006268A1 (en) 2001-05-31 2001-11-15 Method and device for making a metal bump with an increased height
US09/988,097 Expired - Fee Related US6499648B2 (en) 2001-05-31 2001-11-19 Method and device for making a metal bump with an increased height

Family Applications After (1)

Application Number Title Priority Date Filing Date
US09/988,097 Expired - Fee Related US6499648B2 (en) 2001-05-31 2001-11-19 Method and device for making a metal bump with an increased height

Country Status (3)

Country Link
US (2) US20030006268A1 (en)
DE (2) DE10148463A1 (en)
TW (1) TW515067B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050090091A1 (en) * 2003-10-28 2005-04-28 Fujitsu Limited Method of forming multi-piled bump
CN110860759A (en) * 2019-12-26 2020-03-06 广州市谊华电子设备有限公司 Electric soldering iron robot capable of rapidly soldering tin
CN110935979A (en) * 2019-12-26 2020-03-31 广州市谊华电子设备有限公司 Soldering tin piece and electric soldering iron capable of quickly soldering tin

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7249702B2 (en) 2003-12-04 2007-07-31 Kulicke And Soffa Industries, Inc. Multi-part capillary
US7407080B2 (en) * 2004-04-02 2008-08-05 Chippac, Inc. Wire bond capillary tip
US7009305B2 (en) * 2004-06-30 2006-03-07 Agere Systems Inc. Methods and apparatus for integrated circuit ball bonding using stacked ball bumps
JP2012039032A (en) * 2010-08-11 2012-02-23 Fujitsu Ltd Capillary for wire bonding device and ultrasonic transducer
DE112012003918B4 (en) * 2011-09-20 2020-10-22 Orthodyne Electronics Corp. Wire bonding tool
CN103426780A (en) * 2012-05-14 2013-12-04 万国半导体(开曼)股份有限公司 Solder ball array used as height cushion block and solder fixture
US20140374467A1 (en) * 2013-06-24 2014-12-25 Jia Lin Yap Capillary bonding tool and method of forming wire bonds
CN109865913B (en) * 2019-03-22 2021-04-02 北京无线电测量研究所 Path planning method for cleaning soldering bit in automatic welding
CN111584680B (en) * 2020-04-23 2022-03-29 中国科学院上海技术物理研究所 Method for preparing indium concave template for infrared focal plane device
CN111584368B (en) * 2020-04-23 2022-12-30 中国科学院上海技术物理研究所 Method for forming concave points at top end of high-density micro indium column array for infrared focal plane device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4415115A (en) * 1981-06-08 1983-11-15 Motorola, Inc. Bonding means and method
JPH01201934A (en) * 1988-02-08 1989-08-14 Mitsubishi Electric Corp Wire bonding and capillary chip
US4974767A (en) * 1988-04-25 1990-12-04 Texas Instruments Incorporated Double cone wire bonding capillary
JPH0327544A (en) * 1989-06-23 1991-02-05 Mitsubishi Electric Corp Capillary of wire bonding apparatus
US6213378B1 (en) * 1997-01-15 2001-04-10 National Semiconductor Corporation Method and apparatus for ultra-fine pitch wire bonding
US5938105A (en) * 1997-01-15 1999-08-17 National Semiconductor Corporation Encapsulated ball bonding apparatus and method
US6065667A (en) * 1997-01-15 2000-05-23 National Semiconductor Corporation Method and apparatus for fine pitch wire bonding
US5871141A (en) * 1997-05-22 1999-02-16 Kulicke And Soffa, Investments, Inc. Fine pitch bonding tool for constrained bonding
IT1305646B1 (en) * 1998-08-07 2001-05-15 St Microelectronics Srl FORMATION OF GOLD GLOBULES WELDED ON PITCHES OF EXCESSIVE CONNECTION COINING THEIR SUMMIT
US6158647A (en) * 1998-09-29 2000-12-12 Micron Technology, Inc. Concave face wire bond capillary

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050090091A1 (en) * 2003-10-28 2005-04-28 Fujitsu Limited Method of forming multi-piled bump
US7049217B2 (en) * 2003-10-28 2006-05-23 Fujitsu Limited Method of forming multi-piled bump
CN110860759A (en) * 2019-12-26 2020-03-06 广州市谊华电子设备有限公司 Electric soldering iron robot capable of rapidly soldering tin
CN110935979A (en) * 2019-12-26 2020-03-31 广州市谊华电子设备有限公司 Soldering tin piece and electric soldering iron capable of quickly soldering tin

Also Published As

Publication number Publication date
DE10148460A1 (en) 2002-12-05
DE10148463A1 (en) 2003-01-23
US6499648B2 (en) 2002-12-31
US20020179686A1 (en) 2002-12-05
TW515067B (en) 2002-12-21

Similar Documents

Publication Publication Date Title
CN102187443B (en) Wire-bonding method, semiconductor device and manufacturing method thereof
US20030006268A1 (en) Method and device for making a metal bump with an increased height
US7067413B2 (en) Wire bonding method, semiconductor chip, and semiconductor package
US7314818B2 (en) Semiconductor device and method of manufacturing the same, circuit board, and electronic equipment
JP3913134B2 (en) Bump forming method and bump
JP5181261B2 (en) Contact pad for integrated circuit and method of forming contact pad
US20020137327A1 (en) Semiconductor device and manufacturing method thereof.
JP2003243436A (en) Bump forming method, bump attached semiconductor element and manufacturing method thereof, semiconductor device and manufacturing method thereof, substrate and electronic device
US6737295B2 (en) Chip scale package with flip chip interconnect
JP2005019895A (en) Flip chip packaging structure
US20030155405A1 (en) Semiconductor device and method of manufacturing the same, circuit board, and electronic equipment
US20150035147A1 (en) Fine Pitch stud POP Structure and Method
Jordan Gold stud bump in flip-chip applications
US6916687B2 (en) Bump process for flip chip package
WO2006043235A1 (en) Substrate with electric contacts and method of manufacturing the same
US9991248B2 (en) Method and device of pop stacking for preventing bridging of interposer solder balls
JPH1064940A (en) Capillary for wire bonding device
US20090065931A1 (en) Packaged integrated circuit and method of forming thereof
KR20030027416A (en) Device for making a metal bump with an increased height
JP2976947B2 (en) Bump forming method
US20050275073A1 (en) Method and system for improved wire bonding
JP2003234427A (en) Wiring board, semiconductor device using the same and manufacturing method thereof
JPH07130749A (en) Apparatus and method for jointing of lead of electronic component
KR20030027415A (en) Method and device for making a metal bump with an increased height
JPH08186117A (en) Method for capillary and bump forming of wire bonding apparatus

Legal Events

Date Code Title Description
AS Assignment

Owner name: ORIENT SEMICONDUCTOR ELECTRONICS LIMITED, TAIWAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:SHIEH, WEN LO;HUANG, NING;CHEN, HUI-PIN;AND OTHERS;REEL/FRAME:012310/0131

Effective date: 20011106

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION