CN102181895A - One-time electroplating process for lead frame of semiconductor integrated circuit - Google Patents
One-time electroplating process for lead frame of semiconductor integrated circuit Download PDFInfo
- Publication number
- CN102181895A CN102181895A CN2011101343791A CN201110134379A CN102181895A CN 102181895 A CN102181895 A CN 102181895A CN 2011101343791 A CN2011101343791 A CN 2011101343791A CN 201110134379 A CN201110134379 A CN 201110134379A CN 102181895 A CN102181895 A CN 102181895A
- Authority
- CN
- China
- Prior art keywords
- lead frame
- electroplating
- runner
- hole
- spray orifice
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009713 electroplating Methods 0.000 title claims abstract description 53
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 title abstract description 11
- 239000007788 liquid Substances 0.000 claims abstract description 34
- 238000007747 plating Methods 0.000 claims abstract description 30
- 239000007921 spray Substances 0.000 claims abstract description 28
- 238000002347 injection Methods 0.000 claims abstract description 18
- 239000007924 injection Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims description 22
- 238000005516 engineering process Methods 0.000 claims description 13
- 230000000694 effects Effects 0.000 claims description 6
- 238000010992 reflux Methods 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 230000007812 deficiency Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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Abstract
The invention discloses a one-time electroplating process for a lead frame of a semiconductor integrated circuit. In the process, all electroplating unit areas of the lead frame are energized opposite to all spray orifices of a plating head for electroplating operation, wherein an injection flow channel and a liquid backflow channel are formed in the plating head; the spray orifices of the injection flow channel corresponds to the electroplating unit central area of the lead frame; electroplating residual liquid is recycled through the liquid backflow channel; and the liquid backflow channel and the injection flow channel form an electroplating loop to finish the electroplating operation of a plurality of rows of lead frames at a time. The process is suitable for the electroplating operation of the plurality of rows of lead frames and has the advantages of high efficiency, uniform plating layer, high electroplating quality and the like.
Description
Technical field
The present invention discloses a kind of disposable electroplating technology of lead frame of semiconductor integrated circuit, belong to integrated circuit (IC) chip processing and manufacturing technical field by International Patent Classification (IPC) (IPC) division, especially relate to the electro-plating method of a kind of semiconductor integrated circuit lead frame (for example QFN-four sides do not have the pin flat package).
Background technology
Lead frame is as the chip carrier of unicircuit, be a kind of being electrically connected by means of bonding gold wire realization chip internal circuit leading-out end and outer lead, form the key structure spare of electric loop, it plays the function served as bridge that is connected with outer lead, is base mateiral important in the electronics and information industry.In order to satisfy the conductivity of making the IC semiconductor element, the lead frame of unicircuit often will carry out plated metal silver or other metals in its zone, surface local point position.At present, the many rowizations of semiconductor integrated circuit lead frame (comprising the QFN encapsulation) are development trends of industry, and especially for the lead frame of QFN encapsulation, its electrode contacts is near, and plating requires high, and many rowization shell frame products have further increased the plating difficulty.
Applicant's the CN101864586A of application case formerly discloses a kind of electro-plating method of lead frame, be that all cell windows of lead frame layout are divided into staggered 2 groups, electroplate silver layer respectively, being about to the multi-row lead frame frame adopts the jumping plating to carry out electroplating technology twice, this electroplating technology has solved the galvanized difficult problem of the many rows of present lead frame, but it has following deficiency:
1, because same lead frame product needs twice plating just can finish, production efficiency is low;
2, pollute easily in twice plating switching process, have influence on the electroplating quality of lead frame;
3, electroplating process needs two mask plates, and cost is higher, and wherein the cost price of a mask plate just has several thousand yuan.
The contriver reaches summing up experience after further research, creates lead frame and arranges electro-plating method of product more, so proposition of the present invention is just arranged.
Summary of the invention
At the deficiencies in the prior art, the invention provides electroplating technology of lead frame of a kind of semiconductor integrated circuit, solved present lead frame and arranged a plating difficult problem of changing product more, and the present invention can disposable plating to finish the plating point position that many rows of lead frame distribute regional.
For achieving the above object, the present invention is achieved by the following technical solutions:
Electroplating technology of a kind of lead frame of semiconductor integrated circuit, each electroplating unit district of lead frame is faced each spray orifice energising carrying out electroplating activity of plating head, include the injection runner in the plating head and reach back the liquid runner, the electroplating unit central section that the spray orifice correspondence of injection runner lead frame, electroplate surplus liquid and reclaim, and return the liquid runner and arrange electroplating activity more with the disposable lead frame of finishing in injection runner composition plating loop by time liquid runner.
Further, the injection runner of described plating head is to be superposed to the through hole of one on it successively by jet tray, positive plate, substrate and mask plate to constitute, and the through hole of substrate and mask plate is greater than the spray orifice on jet tray and the positive plate.
Further, the loop runner of described plating head is that the diversion trench by return port on mask plate through hole, substrate through-hole and the positive plate and jet tray constitutes, center from mask plate and substrate through-hole during injection enters, and enters return port on the positive plate and reflux around the above-mentioned through hole when flowing backwards.
Further, be provided with four return ports around each spray orifice of described positive plate, and the return port aperture is greater than the spray orifice aperture, each spray orifice is positioned at substrate and mask bottom hole central position, and return port is positioned at the connection section of adjacent four through holes of substrate and extend to openings, the electroplate liquid that spray orifice sprays surplus liquid after lead frame is electroplated is collected by the peripheral loop runner refluence of mask bottom hole, does not influence the jet path of electroplate liquid.
The present invention can be used as the disposable electroplating operations of the lead frame of QFN encapsulating structure, and the plating head is installed on the mechanical arm pressing plate below of electroplating machine, and the anode of positive plate of the present invention and electroplating machine electrically connects.During use, electroplating machine control mechanical arm pressing plate moves downwards, cover plate is covered in the lead frame top, this moment electroplating machine from bottom to top the many rows of corresponding through hole on lead frame by jet tray of the present invention, positive plate, substrate and mask base plate divide cloth each electroplate and select the position and carry out electroplate liquid and impact, switch on and carry out plated metal (silver) operation; Electroplate that surplus liquid is electroplated four jiaos of select that the position distinguishes by each and the refluence groove that is blowed back on the jet tray by electroplate liquid loop runner flows out.
The present invention has following beneficial effect:
1, because only needing once to electroplate, same lead frame product just can finish all zones, plating point position, efficient height;
2, the invention solves and electroplate pollution problems for twice, and the electroplating quality height of lead frame, coating uniformity are good;
3, electroplating process of the present invention only needs a mask plate, saves cost.
Description of drawings
Fig. 1 is that the present invention plates a synoptic diagram.
Fig. 2 is that the present invention plates a positive plate plate diagrammatic sketch.
Fig. 3 is that the present invention plates a vertical view.
Fig. 4 is Fig. 3 partial enlarged drawing.
Fig. 5 is that the present invention plates an assembly drawing.
Fig. 6 is that the present invention plates an exploded view.
Fig. 7 is jet tray of the present invention and positive plate assembly drawing.
Fig. 8 is jet tray of the present invention, positive plate and substrate assembly drawing.
Embodiment
The invention will be further described below in conjunction with accompanying drawing:
Embodiment: electroplating technology of a kind of lead frame of semiconductor integrated circuit, each electroplating unit district of lead frame is faced each spray orifice energising carrying out electroplating activity of a plating A, include the injection runner in the plating head and reach back the liquid runner, the electroplating unit central section that the spray orifice correspondence of injection runner lead frame, electroplate surplus liquid and reclaim, and return the liquid runner and arrange electroplating activity more with the disposable lead frame of finishing in injection runner composition plating loop by time liquid runner.
See also Fig. 1 to Fig. 8, the injection runner of plating head is to be superposed to the through hole of one on it successively by jet tray 1, positive plate 2, substrate 3 and mask plate 4 to constitute, and the through hole 30,40 of substrate and mask plate is a square, cooperate with the electroplating region of lead frame, and above-mentioned cubic through hole is greater than jet tray spray orifice 11 and positive plate spray orifice 21.The loop runner of plating head is that the diversion trench 12 by return port on mask plate through hole, substrate through-hole and the positive plate 22 and jet tray constitutes, the mask plate through hole refers to identical with substrate through-hole and the mask plate through hole, the substrate through-hole that spray in the runner in the runner of loop, center from above-mentioned through hole during injection enters, enter return port on the positive plate and reflux around the above-mentioned through hole when flowing backwards, see also Fig. 3 and Fig. 4, Fig. 5, IN represents the runner that electroplate liquid enters among Fig. 4, and ⊕ Out represents the passage that electroplate liquid refluxes.
See also Fig. 2 and Fig. 6, Fig. 7, Fig. 8, be provided with four return ports 22 around each spray orifice 21 of positive plate 2, and 22 footpaths, return port hole are greater than spray orifice 21 apertures, each spray orifice is positioned at substrate and mask bottom hole central position, and return port 22 is positioned at the connection section of adjacent four through holes of substrate and extend to openings, as shown in Figure 8, the electroplate liquid that spray orifice sprays surplus liquid after lead frame is electroplated is collected by the peripheral loop runner refluence of mask bottom hole, do not influence the jet path of electroplate liquid, among Fig. 1 and Fig. 6, jet tray upwards forms convex 10 and is used for supporting anodes plate 2.
The present invention can be used as the disposable electroplating operations of the lead frame of QFN encapsulating structure, and the plating head is installed on the mechanical arm pressing plate below of electroplating machine, and the anode of positive plate of the present invention and electroplating machine electrically connects.During use, electroplating machine control mechanical arm pressing plate moves downwards, cover plate is covered in the lead frame top, this moment electroplating machine from bottom to top the many rows of corresponding through hole on lead frame by jet tray of the present invention, positive plate, substrate and mask base plate divide cloth each electroplate and select the position and carry out electroplate liquid and impact, switch on and carry out plated metal (silver) operation; Electroplate that surplus liquid is electroplated four jiaos of select that the position distinguishes by each and the refluence groove that is blowed back on the jet tray by electroplate liquid loop runner flows out.
Twice electroplating technology do not resolved in the electroplate liquid loop in fact in the prior art, for many rowization lead frames, adjacent electroplating region is near, so just adopt two mask plates of replacing to carry out twice plating, window on two mask plates is staggered, and the present invention adopts reasonably time liquid runner, and all of disposable electroplate lead wire framework are electroplated the some position.
The above record only for utilizing the embodiment of this origination techniques content, anyly is familiar with modification, the variation that this skill person uses this creation to do, and all belongs to the claim of this creation opinion, and is not limited to those disclosed embodiments.
Claims (4)
1. electroplating technology of the lead frame of a semiconductor integrated circuit, it is characterized in that: each spray orifice energising the carrying out electroplating activity that each electroplating unit district of lead frame is faced the plating head, include the injection runner in the plating head and reach back the liquid runner, the electroplating unit central section that the spray orifice correspondence of injection runner lead frame, electroplate surplus liquid and reclaim, and return the liquid runner and arrange electroplating activity more with the disposable lead frame of finishing in injection runner composition plating loop by time liquid runner.
2. electroplating technology of the lead frame of semiconductor integrated circuit according to claim 1, it is characterized in that: the injection runner of described plating head is to be superposed to the through hole of one on it successively by jet tray, positive plate, substrate and mask plate to constitute, and the through hole of substrate and mask plate is greater than the spray orifice on jet tray and the positive plate.
3. electroplating technology of the lead frame of semiconductor integrated circuit according to claim 1, it is characterized in that: the loop runner of described plating head is that the diversion trench by return port on mask plate through hole, substrate through-hole and the positive plate and jet tray constitutes, center from mask plate and substrate through-hole during injection enters, and enters return port on the positive plate and reflux around the above-mentioned through hole when flowing backwards.
4. according to electroplating technologies of lead frame of claim 2 or 3 described semiconductor integrated circuit, it is characterized in that: be provided with four return ports around each spray orifice of described positive plate, and the return port aperture is greater than the spray orifice aperture, each spray orifice is positioned at substrate and mask bottom hole central position, and return port is positioned at the connection section of adjacent four through holes of substrate and to the openings extension, the electroplate liquid that spray orifice sprays surplus liquid after lead frame is electroplated is collected by the peripheral loop runner refluence of mask bottom hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101343791A CN102181895B (en) | 2011-05-24 | 2011-05-24 | One-time electroplating process for lead frame of semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101343791A CN102181895B (en) | 2011-05-24 | 2011-05-24 | One-time electroplating process for lead frame of semiconductor integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102181895A true CN102181895A (en) | 2011-09-14 |
| CN102181895B CN102181895B (en) | 2013-11-13 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011101343791A Expired - Fee Related CN102181895B (en) | 2011-05-24 | 2011-05-24 | One-time electroplating process for lead frame of semiconductor integrated circuit |
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| Country | Link |
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| CN (1) | CN102181895B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103469289A (en) * | 2013-09-27 | 2013-12-25 | 铜陵丰山三佳微电子有限公司 | Integrated circuit lead frame plate type electroplating clamp |
| CN109972181A (en) * | 2019-04-17 | 2019-07-05 | 天水华洋电子科技股份有限公司 | A kind of high-density lead frame pressing plate electroplating mold |
| CN112899743A (en) * | 2021-01-19 | 2021-06-04 | 鑫巨(深圳)半导体科技有限公司 | Electroplating device and electroplating method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201212065Y (en) * | 2008-06-26 | 2009-03-25 | 铜陵丰山三佳微电子有限公司 | Slice type electroplating clamper of integrated circuit lead frame |
| CN201729904U (en) * | 2010-06-25 | 2011-02-02 | 厦门永红科技有限公司 | Electroplating aid for lead frame of quad flat no-lead (QFN) packaging structure |
| CN202148357U (en) * | 2011-05-23 | 2012-02-22 | 厦门永红科技有限公司 | Plating head mask plate structure |
-
2011
- 2011-05-24 CN CN2011101343791A patent/CN102181895B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201212065Y (en) * | 2008-06-26 | 2009-03-25 | 铜陵丰山三佳微电子有限公司 | Slice type electroplating clamper of integrated circuit lead frame |
| CN201729904U (en) * | 2010-06-25 | 2011-02-02 | 厦门永红科技有限公司 | Electroplating aid for lead frame of quad flat no-lead (QFN) packaging structure |
| CN202148357U (en) * | 2011-05-23 | 2012-02-22 | 厦门永红科技有限公司 | Plating head mask plate structure |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103469289A (en) * | 2013-09-27 | 2013-12-25 | 铜陵丰山三佳微电子有限公司 | Integrated circuit lead frame plate type electroplating clamp |
| CN109972181A (en) * | 2019-04-17 | 2019-07-05 | 天水华洋电子科技股份有限公司 | A kind of high-density lead frame pressing plate electroplating mold |
| CN112899743A (en) * | 2021-01-19 | 2021-06-04 | 鑫巨(深圳)半导体科技有限公司 | Electroplating device and electroplating method |
| KR20220105117A (en) * | 2021-01-19 | 2022-07-26 | 시메트릭 세미컨덕터 솔루션즈 컴퍼니 리미티드 | Electroplating device and electroplating method |
| WO2022156420A1 (en) * | 2021-01-19 | 2022-07-28 | 鑫巨(深圳)半导体科技有限公司 | Electroplating device and electroplating method |
| TWI788163B (en) * | 2021-01-19 | 2022-12-21 | 大陸商鑫巨（深圳）半導體科技有限公司 | Electroplating device and electroplating method |
| US11702758B2 (en) | 2021-01-19 | 2023-07-18 | Simetric Semiconductor Solutions Co., Ltd. | Electroplating device and electroplating method |
| KR102651080B1 (en) | 2021-01-19 | 2024-03-22 | 시메트릭 세미컨덕터 솔루션즈 컴퍼니 리미티드 | Electroplating device and electroplating method |
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| Publication number | Publication date |
|---|---|
| CN102181895B (en) | 2013-11-13 |
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| C53 | Correction of patent of invention or patent application | ||
| CB03 | Change of inventor or designer information |
Inventor after: Wang Fengtao Inventor after: Lin Guixian Inventor after: Su Yuelai Inventor after: Li Nansheng Inventor after: Hong Yuyun Inventor after: Luo Zhuang Inventor before: Wang Fengtao Inventor before: Lin Guixian Inventor before: Su Yuelai Inventor before: Li Nansheng Inventor before: Luo Zhuang |
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Free format text: CORRECT: INVENTOR; FROM: WANG FENGTAO LIN GUIXIAN SU YUELAI LI NANSHENG LUO ZHUANG TO: WANG FENGTAO LIN GUIXIAN SU YUELAI LI NANSHENG HONG YUYUN LUO ZHUANG |
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| C53 | Correction of patent of invention or patent application | ||
| CB03 | Change of inventor or designer information |
Inventor after: Wang Fengtao Inventor after: Hong Yuyun Inventor after: Lin Guixian Inventor after: Su Yuelai Inventor after: Li Nansheng Inventor after: Luo Zhuang Inventor before: Wang Fengtao Inventor before: Lin Guixian Inventor before: Su Yuelai Inventor before: Li Nansheng Inventor before: Hong Yuyun Inventor before: Luo Zhuang |
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| COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: WANG FENGTAO LIN GUIXIAN SU YUELAI LI NANSHENG HONG YUYUN LUO ZHUANG TO: WANG FENGTAO HONG YUYUN LIN GUIXIAN SU YUELAI LI NANSHENG LUO ZHUANG |
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| C14 | Grant of patent or utility model | ||
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Granted publication date: 20131113 |
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| CF01 | Termination of patent right due to non-payment of annual fee |