CN102181895B - One-time electroplating process for lead frame of semiconductor integrated circuit - Google Patents
One-time electroplating process for lead frame of semiconductor integrated circuit Download PDFInfo
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- CN102181895B CN102181895B CN2011101343791A CN201110134379A CN102181895B CN 102181895 B CN102181895 B CN 102181895B CN 2011101343791 A CN2011101343791 A CN 2011101343791A CN 201110134379 A CN201110134379 A CN 201110134379A CN 102181895 B CN102181895 B CN 102181895B
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Abstract
The invention discloses a one-time electroplating process for a lead frame of a semiconductor integrated circuit. In the process, all electroplating unit areas of the lead frame are energized opposite to all spray orifices of a plating head for electroplating operation, wherein an injection flow channel and a liquid backflow channel are formed in the plating head; the spray orifices of the injection flow channel corresponds to the electroplating unit central area of the lead frame; electroplating residual liquid is recycled through the liquid backflow channel; and the liquid backflow channel and the injection flow channel form an electroplating loop to finish the electroplating operation of a plurality of rows of lead frames at a time. The process is suitable for the electroplating operation of the plurality of rows of lead frames and has the advantages of high efficiency, uniform plating layer, high electroplating quality and the like.
Description
Technical field
The present invention discloses a kind of disposable electroplating technology of lead frame of semiconductor integrated circuit, divide and belong to integrated circuit (IC) chip processing and manufacturing technical field by International Patent Classification (IPC) (IPC), especially relate to the electro-plating method of a kind of semiconductor integrated circuit lead frame (for example QFN-four sides are without the pin flat package).
Background technology
Lead frame is as the chip carrier of unicircuit, it is a kind of electrical connection that realizes chip internal circuit leading-out end and outer lead by means of bonding gold wire, form the key structure spare of electric loop, it plays the function served as bridge that is connected with outer lead, is base mateiral important in electronics and information industry.In order to meet the conductivity of manufacturing integration circuit semiconductor element, the lead frame of unicircuit often will carry out plated metal silver or other metals in its zone, surface local point position.At present, the many rowizations of semiconductor integrated circuit lead frame (comprising the QFN encapsulation) are development trends of industry, and especially for the lead frame of QFN encapsulation, its electrode contacts is near, plating requires high, and many rowization shell frame products have further increased the plating difficulty.
Applicant's formerly application case CN101864586A discloses a kind of electro-plating method of lead frame, with staggered 2 groups of being divided into of all cell windows of lead frame layout, electroplate respectively silver layer, being about to the multi-row lead frame frame adopts the jumping plating to carry out electroplating technology twice, this electroplating technology has solved present lead frame and has arranged the difficult problem of plating more, but it has following deficiency:
1, just can complete because same lead frame product needs twice plating, production efficiency is low;
2, electroplate in switching process for twice and easily pollute, have influence on the electroplating quality of lead frame;
3, electroplating process needs two mask plates, and cost is higher, and wherein the cost price of a mask plate just has several thousand yuan.
The contriver reaches summing up experience after further research, creates lead frame and arranges electro-plating method of product more, therefore proposition of the present invention is just arranged.
Summary of the invention
For the deficiencies in the prior art, the invention provides electroplating technology of lead frame of a kind of semiconductor integrated circuit, solved present lead frame and arranged a plating difficult problem of changing product more, and the present invention can disposable plating to complete the plating point position that many rows of lead frame distribute regional.
For achieving the above object, the present invention is achieved by the following technical solutions:
Electroplating technology of a kind of lead frame of semiconductor integrated circuit, electroplating activity is carried out in each spray orifice energising that each electroplating unit district of lead frame is faced the plating head, include the injection runner in the plating head and reach back the liquid runner, the electroplating unit central section that the spray orifice correspondence of injection runner lead frame, more than electroplating, liquid reclaims by time liquid runner, and returns the liquid runner and spray the disposable lead frame of completing in runner composition plating loop and arrange electroplating activity more.
Further, the injection runner of described plating head is to be superposed to successively the through hole of one on it by jet tray, positive plate, substrate and mask plate to form, and the through hole of substrate and mask plate is greater than the spray orifice on jet tray and positive plate.
Further, the loop runner of described plating head is that the diversion trench by the return port on mask plate through hole, substrate through-hole and positive plate and jet tray forms, enter from the center of mask plate and substrate through-hole during injection, and reflux and enter return port on positive plate from the surrounding of above-mentioned through hole while flowing backwards.
Further, be provided with four return ports around each spray orifice of described positive plate, and the return port aperture is greater than the spray orifice aperture, each spray orifice is positioned at substrate and mask bottom hole central position, and return port is positioned at the connection section of adjacent four through holes of substrate and to openings, extends, the electroplate liquid that spray orifice sprays remaining liquid after lead frame is electroplated is collected by the peripheral loop runner refluence of mask bottom hole, does not affect the jet path of electroplate liquid.
The present invention can be used as the disposable electroplating operations of the lead frame of QFN encapsulating structure, and the plating head is installed on the mechanical arm pressing plate below of electroplating machine, and the anode of positive plate of the present invention and electroplating machine electrically connects.During use, electroplating machine is controlled the mechanical arm pressing plate and is moved downwards, cover plate is covered in the lead frame top, this moment electroplating machine from bottom to top the corresponding through hole by jet tray of the present invention, positive plate, substrate and mask base plate electroplate and select position and carry out electroplate liquid and impact to each of the many rowization distributions on lead frame, switch on and carry out plated metal (silver) operation; The remaining liquid of plating selects four jiaos of position district by each plating and the refluence groove that is blowed back on jet tray by electroplate liquid loop runner flows out.
The present invention has following beneficial effect:
1, only need to once electroplate and just can complete all and electroplate zone, some position due to same lead frame product, efficiency is high;
2, the invention solves the problem that twice plating polluted, and the electroplating quality of lead frame is high, coating uniformity good;
3, electroplating process of the present invention only needs a mask plate, saves cost.
Description of drawings
Fig. 1 is that the present invention plates a schematic diagram.
Fig. 2 is that the present invention plates a positive plate plate diagram.
Fig. 3 is that the present invention plates a vertical view.
Fig. 4 is Fig. 3 partial enlarged drawing.
Fig. 5 is that the present invention plates an assembly drawing.
Fig. 6 is that the present invention plates an exploded view.
Fig. 7 is jet tray of the present invention and positive plate assembly drawing.
Fig. 8 is jet tray of the present invention, positive plate and substrate mounting figure.
Embodiment
The invention will be further described below in conjunction with accompanying drawing:
Embodiment: electroplating technology of a kind of lead frame of semiconductor integrated circuit, electroplating activity is carried out in each spray orifice energising that each electroplating unit district of lead frame is faced a plating A, include the injection runner in the plating head and reach back the liquid runner, the electroplating unit central section that the spray orifice correspondence of injection runner lead frame, more than electroplating, liquid reclaims by time liquid runner, and returns the liquid runner and spray the disposable lead frame of completing in runner composition plating loop and arrange electroplating activity more.
See also Fig. 1 to Fig. 8, the injection runner of plating head is to be superposed to successively the through hole of one on it by jet tray 1, positive plate 2, substrate 3 and mask plate 4 to form, and the through hole 30 of substrate and mask plate, 40 is square, coordinate with the electroplating region of lead frame, and above-mentioned cubic through hole is greater than jet tray spray orifice 11 and positive plate spray orifice 21.The loop runner of plating head is that the diversion trench 12 by the return port 22 on mask plate through hole, substrate through-hole and positive plate and jet tray forms, in the runner of loop, the mask plate through hole refers to identical with substrate through-hole and the mask plate through hole, the substrate through-hole that spray in runner, center from above-mentioned through hole during injection enters, enter return port on positive plate and reflux from the surrounding of above-mentioned through hole while flowing backwards, see also Fig. 3 and Fig. 4, Fig. 5, in Fig. 4, IN represents the runner that electroplate liquid enters, and ⊕ Out represents the passage that electroplate liquid refluxes.
see also Fig. 2 and Fig. 6, Fig. 7, Fig. 8, be provided with four return ports 22 around each spray orifice 21 of positive plate 2, and 22 footpaths, return port hole are greater than spray orifice 21 apertures, each spray orifice is positioned at substrate and mask bottom hole central position, and return port 22 is positioned at the connection section of adjacent four through holes of substrate and to openings, extends, as shown in Figure 8, the electroplate liquid that spray orifice sprays remaining liquid after lead frame is electroplated is collected by the peripheral loop runner refluence of mask bottom hole, do not affect the jet path of electroplate liquid, in Fig. 1 and Fig. 6, jet tray upwards forms convex 10 and is used for supporting anodes plate 2.
The present invention can be used as the disposable electroplating operations of the lead frame of QFN encapsulating structure, and the plating head is installed on the mechanical arm pressing plate below of electroplating machine, and the anode of positive plate of the present invention and electroplating machine electrically connects.During use, electroplating machine is controlled the mechanical arm pressing plate and is moved downwards, cover plate is covered in the lead frame top, this moment electroplating machine from bottom to top the corresponding through hole by jet tray of the present invention, positive plate, substrate and mask base plate electroplate and select position and carry out electroplate liquid and impact to each of the many rowization distributions on lead frame, switch on and carry out plated metal (silver) operation; The remaining liquid of plating selects four jiaos of position district by each plating and the refluence groove that is blowed back on jet tray by electroplate liquid loop runner flows out.
In prior art, twice electroplating technology do not resolved in the electroplate liquid loop in fact, for many rowization lead frames, adjacent electroplating region is near, so just adopt two mask plates of replacing to carry out twice plating, window on two mask plates is staggered, and the present invention adopts reasonably time liquid runner, and all of disposable electroplating lead frame are electroplated the some position.
The above record, only for utilizing the embodiment of this origination techniques content, modification, variation that any those skilled in the art use this creation to do, all belong to the scope of the claims that this creation is advocated, and be not limited to those disclosed embodiments.
Claims (2)
1. electroplating technology of lead frame of a semiconductor integrated circuit, it is characterized in that: electroplating activity is carried out in each spray orifice energising that each electroplating unit district of lead frame is faced the plating head, include the injection runner in the plating head and reach back the liquid runner, the electroplating unit central section that the spray orifice correspondence of injection runner lead frame, more than electroplating, liquid reclaims by time liquid runner, and returns the liquid runner and spray the disposable lead frame of completing in runner composition plating loop and arrange electroplating activity more; The injection runner of described plating head is to be superposed to successively the through hole of one on it by jet tray, positive plate, substrate and mask plate to form, and the through hole of substrate and mask plate is greater than the spray orifice on jet tray and positive plate;
The liquid runner that returns of described plating head is that diversion trench by the return port on mask plate through hole, substrate through-hole, positive plate and jet tray forms, enter from the center of mask plate and substrate through-hole during injection, and reflux and enter return port on positive plate from the surrounding of above-mentioned through hole while flowing backwards.
2. electroplating technology of lead frame of semiconductor integrated circuit according to claim 1, it is characterized in that: be provided with four return ports around each spray orifice of described positive plate, and the return port aperture is greater than the spray orifice aperture, each spray orifice is positioned at substrate and mask plate through hole central position, and return port is positioned at the connection section of adjacent four through holes of substrate and to openings, extends, and the electroplate liquid that spray orifice sprays remaining liquid periphery by the mask plate through hole after lead frame is electroplated returns the liquid runner and flows backwards and collect.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101343791A CN102181895B (en) | 2011-05-24 | 2011-05-24 | One-time electroplating process for lead frame of semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101343791A CN102181895B (en) | 2011-05-24 | 2011-05-24 | One-time electroplating process for lead frame of semiconductor integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102181895A CN102181895A (en) | 2011-09-14 |
| CN102181895B true CN102181895B (en) | 2013-11-13 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2011101343791A Expired - Fee Related CN102181895B (en) | 2011-05-24 | 2011-05-24 | One-time electroplating process for lead frame of semiconductor integrated circuit |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103469289A (en) * | 2013-09-27 | 2013-12-25 | 铜陵丰山三佳微电子有限公司 | Integrated circuit lead frame plate type electroplating clamp |
| CN109972181A (en) * | 2019-04-17 | 2019-07-05 | 天水华洋电子科技股份有限公司 | A kind of high-density lead frame pressing plate electroplating mold |
| CN112899743B (en) * | 2021-01-19 | 2021-09-21 | 鑫巨(深圳)半导体科技有限公司 | Electroplating device and electroplating method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201212065Y (en) * | 2008-06-26 | 2009-03-25 | 铜陵丰山三佳微电子有限公司 | Slice type electroplating clamper of integrated circuit lead frame |
| CN201729904U (en) * | 2010-06-25 | 2011-02-02 | 厦门永红科技有限公司 | Electroplating aid for lead frame of quad flat no-lead (QFN) packaging structure |
| CN202148357U (en) * | 2011-05-23 | 2012-02-22 | 厦门永红科技有限公司 | Plating head mask plate structure |
-
2011
- 2011-05-24 CN CN2011101343791A patent/CN102181895B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201212065Y (en) * | 2008-06-26 | 2009-03-25 | 铜陵丰山三佳微电子有限公司 | Slice type electroplating clamper of integrated circuit lead frame |
| CN201729904U (en) * | 2010-06-25 | 2011-02-02 | 厦门永红科技有限公司 | Electroplating aid for lead frame of quad flat no-lead (QFN) packaging structure |
| CN202148357U (en) * | 2011-05-23 | 2012-02-22 | 厦门永红科技有限公司 | Plating head mask plate structure |
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| Publication number | Publication date |
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| CN102181895A (en) | 2011-09-14 |
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Inventor after: Wang Fengtao Inventor after: Lin Guixian Inventor after: Su Yuelai Inventor after: Li Nansheng Inventor after: Hong Yuyun Inventor after: Luo Zhuang Inventor before: Wang Fengtao Inventor before: Lin Guixian Inventor before: Su Yuelai Inventor before: Li Nansheng Inventor before: Luo Zhuang |
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Inventor after: Wang Fengtao Inventor after: Hong Yuyun Inventor after: Lin Guixian Inventor after: Su Yuelai Inventor after: Li Nansheng Inventor after: Luo Zhuang Inventor before: Wang Fengtao Inventor before: Lin Guixian Inventor before: Su Yuelai Inventor before: Li Nansheng Inventor before: Hong Yuyun Inventor before: Luo Zhuang |
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