CN102177554A - 补偿在非易失性存储器中的读操作期间的耦合 - Google Patents
补偿在非易失性存储器中的读操作期间的耦合 Download PDFInfo
- Publication number
- CN102177554A CN102177554A CN200980139823XA CN200980139823A CN102177554A CN 102177554 A CN102177554 A CN 102177554A CN 200980139823X A CN200980139823X A CN 200980139823XA CN 200980139823 A CN200980139823 A CN 200980139823A CN 102177554 A CN102177554 A CN 102177554A
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- CN
- China
- Prior art keywords
- memory element
- bit line
- voltage
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- read
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/24—Bit-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
Abstract
Description
Claims (15)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/188,629 US7876611B2 (en) | 2008-08-08 | 2008-08-08 | Compensating for coupling during read operations in non-volatile storage |
US12/188,629 | 2008-08-08 | ||
PCT/US2009/050974 WO2010017013A1 (en) | 2008-08-08 | 2009-07-17 | Compensating for coupling during read operations in non-volatile storage |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102177554A true CN102177554A (zh) | 2011-09-07 |
CN102177554B CN102177554B (zh) | 2014-07-02 |
Family
ID=41136720
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200980139823.XA Active CN102177554B (zh) | 2008-08-08 | 2009-07-17 | 补偿在非易失性存储器中的读操作期间的耦合 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7876611B2 (zh) |
EP (1) | EP2311040B1 (zh) |
JP (1) | JP5250112B2 (zh) |
KR (1) | KR101667007B1 (zh) |
CN (1) | CN102177554B (zh) |
TW (1) | TWI424436B (zh) |
WO (1) | WO2010017013A1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN110491433A (zh) * | 2018-05-14 | 2019-11-22 | 三星电子株式会社 | 非易失性存储器装置及其操作方法 |
CN110770837A (zh) * | 2017-08-16 | 2020-02-07 | 桑迪士克科技有限责任公司 | 减少具有连接的源极端选择栅极的3d存储器设备中的热电子注入型读取干扰 |
CN112614531A (zh) * | 2021-01-06 | 2021-04-06 | 长江存储科技有限责任公司 | 3d存储器件及其读取方法 |
CN114203236A (zh) * | 2021-12-10 | 2022-03-18 | 北京得瑞领新科技有限公司 | Nand闪存的数据读操作电压施加方法及装置 |
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US8151163B2 (en) | 2006-12-03 | 2012-04-03 | Anobit Technologies Ltd. | Automatic defect management in memory devices |
US7900102B2 (en) * | 2006-12-17 | 2011-03-01 | Anobit Technologies Ltd. | High-speed programming of memory devices |
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US8429493B2 (en) * | 2007-05-12 | 2013-04-23 | Apple Inc. | Memory device with internal signap processing unit |
US8234545B2 (en) | 2007-05-12 | 2012-07-31 | Apple Inc. | Data storage with incremental redundancy |
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US8174905B2 (en) | 2007-09-19 | 2012-05-08 | Anobit Technologies Ltd. | Programming orders for reducing distortion in arrays of multi-level analog memory cells |
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KR101509836B1 (ko) | 2007-11-13 | 2015-04-06 | 애플 인크. | 멀티 유닛 메모리 디바이스에서의 메모리 유닛의 최적화된 선택 |
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US8209588B2 (en) | 2007-12-12 | 2012-06-26 | Anobit Technologies Ltd. | Efficient interference cancellation in analog memory cell arrays |
US8085586B2 (en) | 2007-12-27 | 2011-12-27 | Anobit Technologies Ltd. | Wear level estimation in analog memory cells |
US8156398B2 (en) | 2008-02-05 | 2012-04-10 | Anobit Technologies Ltd. | Parameter estimation based on error correction code parity check equations |
US7924587B2 (en) | 2008-02-21 | 2011-04-12 | Anobit Technologies Ltd. | Programming of analog memory cells using a single programming pulse per state transition |
US7864573B2 (en) * | 2008-02-24 | 2011-01-04 | Anobit Technologies Ltd. | Programming analog memory cells for reduced variance after retention |
US8230300B2 (en) * | 2008-03-07 | 2012-07-24 | Apple Inc. | Efficient readout from analog memory cells using data compression |
US8400858B2 (en) | 2008-03-18 | 2013-03-19 | Apple Inc. | Memory device with reduced sense time readout |
US8059457B2 (en) | 2008-03-18 | 2011-11-15 | Anobit Technologies Ltd. | Memory device with multiple-accuracy read commands |
US7796436B2 (en) * | 2008-07-03 | 2010-09-14 | Macronix International Co., Ltd. | Reading method for MLC memory and reading circuit using the same |
US7924613B1 (en) | 2008-08-05 | 2011-04-12 | Anobit Technologies Ltd. | Data storage in analog memory cells with protection against programming interruption |
US7995388B1 (en) | 2008-08-05 | 2011-08-09 | Anobit Technologies Ltd. | Data storage using modified voltages |
US8169825B1 (en) | 2008-09-02 | 2012-05-01 | Anobit Technologies Ltd. | Reliable data storage in analog memory cells subjected to long retention periods |
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US8000135B1 (en) | 2008-09-14 | 2011-08-16 | Anobit Technologies Ltd. | Estimation of memory cell read thresholds by sampling inside programming level distribution intervals |
US8482978B1 (en) | 2008-09-14 | 2013-07-09 | Apple Inc. | Estimation of memory cell read thresholds by sampling inside programming level distribution intervals |
US8239734B1 (en) | 2008-10-15 | 2012-08-07 | Apple Inc. | Efficient data storage in storage device arrays |
US8713330B1 (en) | 2008-10-30 | 2014-04-29 | Apple Inc. | Data scrambling in memory devices |
US8208304B2 (en) | 2008-11-16 | 2012-06-26 | Anobit Technologies Ltd. | Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N |
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US8924661B1 (en) | 2009-01-18 | 2014-12-30 | Apple Inc. | Memory system including a controller and processors associated with memory devices |
US8023345B2 (en) * | 2009-02-24 | 2011-09-20 | International Business Machines Corporation | Iteratively writing contents to memory locations using a statistical model |
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US8238157B1 (en) | 2009-04-12 | 2012-08-07 | Apple Inc. | Selective re-programming of analog memory cells |
US7898864B2 (en) * | 2009-06-24 | 2011-03-01 | Sandisk Corporation | Read operation for memory with compensation for coupling based on write-erase cycles |
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JP2011198436A (ja) * | 2010-03-23 | 2011-10-06 | Toshiba Corp | 半導体記憶装置 |
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-
2008
- 2008-08-08 US US12/188,629 patent/US7876611B2/en active Active
-
2009
- 2009-07-17 CN CN200980139823.XA patent/CN102177554B/zh active Active
- 2009-07-17 EP EP09790575.6A patent/EP2311040B1/en active Active
- 2009-07-17 JP JP2011522097A patent/JP5250112B2/ja active Active
- 2009-07-17 KR KR1020117005006A patent/KR101667007B1/ko active IP Right Grant
- 2009-07-17 WO PCT/US2009/050974 patent/WO2010017013A1/en active Application Filing
- 2009-08-04 TW TW098126195A patent/TWI424436B/zh not_active IP Right Cessation
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110770837A (zh) * | 2017-08-16 | 2020-02-07 | 桑迪士克科技有限责任公司 | 减少具有连接的源极端选择栅极的3d存储器设备中的热电子注入型读取干扰 |
CN110770837B (zh) * | 2017-08-16 | 2023-10-31 | 桑迪士克科技有限责任公司 | 用于减少热电子注入型读取干扰的存储器设备和方法 |
CN110491433A (zh) * | 2018-05-14 | 2019-11-22 | 三星电子株式会社 | 非易失性存储器装置及其操作方法 |
CN112614531A (zh) * | 2021-01-06 | 2021-04-06 | 长江存储科技有限责任公司 | 3d存储器件及其读取方法 |
CN114203236A (zh) * | 2021-12-10 | 2022-03-18 | 北京得瑞领新科技有限公司 | Nand闪存的数据读操作电压施加方法及装置 |
Also Published As
Publication number | Publication date |
---|---|
US7876611B2 (en) | 2011-01-25 |
EP2311040B1 (en) | 2015-01-28 |
TWI424436B (zh) | 2014-01-21 |
US20100034022A1 (en) | 2010-02-11 |
KR101667007B1 (ko) | 2016-10-17 |
EP2311040A1 (en) | 2011-04-20 |
JP5250112B2 (ja) | 2013-07-31 |
CN102177554B (zh) | 2014-07-02 |
KR20110056285A (ko) | 2011-05-26 |
TW201011757A (en) | 2010-03-16 |
JP2011530776A (ja) | 2011-12-22 |
WO2010017013A1 (en) | 2010-02-11 |
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