CN102165560A - Source gas supply apparatus - Google Patents
Source gas supply apparatus Download PDFInfo
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- CN102165560A CN102165560A CN2009801382744A CN200980138274A CN102165560A CN 102165560 A CN102165560 A CN 102165560A CN 2009801382744 A CN2009801382744 A CN 2009801382744A CN 200980138274 A CN200980138274 A CN 200980138274A CN 102165560 A CN102165560 A CN 102165560A
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- source gas
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- condensing
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
Abstract
Disclosed is a source gas supply apparatus for gasifying source materials which are used as raw materials for thin film deposition by chemical vapor deposition, and supplying the gas into a deposition chamber. The source gas supply apparatus (200) according to the present invention comprises: a source gas generating unit (210) for heating source materials to generate source gas; and a source gas condensation unit (240) where the source gas generated by the source gas generating unit (210) is introduced and condensed. The source gas supply apparatus (200) of the present invention enables the feeding of source gas from the source gas generating unit (210) to the source gas condensation unit (240) to proceed to condense the source gas in the source gas condensation unit (240) until the volume of condensation of the source gas condensed in the source gas condensation unit (240) reaches a saturated level. The source gas supply apparatus (200) of the present invention cuts off the feeding of source gas from the source gas generating unit (210) to the source gas condensation unit (240) after the volume of condensation of the source gas condensed in the source gas condensation unit (240) has reached the saturated level, and enables the source gas condensed in the source gas condensation unit (240) to flow into a deposition chamber (250).
Description
Technical field
The present invention relates to a kind of source air supplying device that can control the source gas pressure in the deposited chamber when adopting chemical vapour deposition technique to carry out film vapor deposition.More particularly, relate to a kind of source gas of specified quantitative that makes and flow in the deposited chamber, thereby can control the pressure of the source gas in the deposited chamber or the source air supplying device of flow exactly.
Background technology
The film vapor deposition that adopts chemical vapour deposition technique (Chemical Vapor Deposition:CVD) is in the application in the various fields of the luminescent layer of the transparency electrode of the insulating barrier of semiconductor element and active layer, liquid crystal display cells, electro-luminescent display unit, protective layer etc., and is extremely important technically.
Usually, the rerum natura of the film of employing CVD evaporation is subjected to the influence of CVD process conditions such as evaporation pressure, evaporation temperature, evaporation time very much.For example, along with the variation of evaporation pressure, the structure of evaporated film, density, bonding force, evaporation rate etc. can change.
Adopt the situation of CVD, (that is) influence, the pressure of source gas, this source air supplying device is used to supply with the film substrate raw material of the evaporation of wanting to the source gas flow that evaporation pressure directly is subjected to source air supplying device and is provided.That is, in CVD, suitably controlling evaporation pressure, the best source gas flow in the Controlling Source gas supply device exactly.Particularly, need accurate and when regulating evaporation rate definitely, the importance that the source gas flow is regulated is more obvious.
Fig. 1 is the schematic diagram of the formation of the existing source air supplying device 100 of expression.Existing source air supplying device 100 is generated source gas by heating source material 120 source gas generating unit 110, heater 130, carrier gas supply unit 140, deposited chamber 150 and a plurality of valve 161～164 constitute.Usually, source material 120 exists with solid or liquid condition at normal temperatures, therefore, in order to make 120 gasifications of source material, source material 120 need be heated to more than the normal temperature.At this moment, heater 130 is as the device of heating source material 120 and use.
Usually, source gas is because than great, so its mobility is relatively poor.For source gas is successfully moved, need utilize carrier gas in deposited chamber 150.According to circumstances, regulate the flow or the pressure of source gas and carrier gas by opening and closing a plurality of valves 161～164.For example, under the situation of not using carrier gas, shut off valve 161,163.
Summary of the invention
Technical problem
But there are the following problems for this existing source air supplying device 100.At first, along with in the source gas generating unit 110 the difference of amount of residual source material 120, the vapo(u)rability of source material 120 changes.So, be difficult to regulate exactly the pressure of source gas only according to the switching of valve 162.And along with make the evaporation of source material 120 and carrying out repeatedly of condensation process by heating source material 120, the evaporation surface of source material 120 changes, and the vapo(u)rability of source material 120 also changes, so can not regulate the pressure of source gas exactly.Particularly, source material 120 is under pulverous situation, and the variation of the surface condition of source material 120 is bigger, and the problems referred to above point becomes more serious.
Technical solution
The present invention proposes in order to solve aforesaid conventional art problem, purpose is, a kind of source air supplying device is provided, and it can control the pressure or the flow of the source gas in the deposited chamber exactly when adopting chemical vapour deposition technique to carry out film vapor deposition.
Beneficial effect
The source air supplying device that the present invention relates to is when adopting chemical vapour deposition technique to carry out film vapor deposition, irrelevant with the state of source material in the gas generating unit of source, can control the amount that flows into the source gas in the deposited chamber exactly, thereby have the effect that to regulate evaporation pressure in the evaporation process that in deposited chamber, carries out exactly.
Description of drawings
Fig. 1 is the schematic diagram of the formation of the existing source air supplying device 100 of expression.
Fig. 2 is the schematic diagram of the formation of the source air supplying device 200 that relates to of expression one embodiment of the invention.
Fig. 3 to Fig. 6 is that the source gas of expression source air supplying device 200 condenses that the inside of portion 240 constitutes and the schematic diagram of an embodiment of action step.
Fig. 7 to Figure 10 is that the source gas of expression source air supplying device 200 condenses that the inside of portion 240 constitutes and the schematic diagram of another embodiment of action step.
Figure 11 is the schematic diagram of the formation of the source air supplying device 300 that relates to of expression one embodiment of the invention.
Figure 12 to Figure 14 is the source gas of expression source air supplying device 300 schematic diagram of an embodiment of action step of portion 340 that condenses.
Figure 15 is the source gas of expression source air supplying device 300 schematic diagram of another embodiment of action step of portion 340 that condenses.
Reference numeral
200: source air supplying device
210: source gas generating unit
212: the source material
214: heater
220: the carrier gas supply unit
230: flow control portion
240: the source gas portion of condensing
241: the first main parts
242: the first temperature regulation section
243: the second main parts
244: the second temperature regulation section
245: source gas condensed layer
250: deposited chamber
260: bypass section
271: the first valves
272: the second valves
273: the three valves
274: the four valves
275: the five valves
276: the six valves
300: source air supplying device
310: source gas generating unit
312: the source material
314: heater
320: the carrier gas supply unit
330: flow control portion
340: the source gas portion of condensing
341: the first portions of condensing (tubular structure thing)
342: inner surface
343: the first temperature regulation section
344: the second portions of condensing (network structure thing)
345: the second temperature regulation section
346: the source gas that condenses
350: sensor part
360: deposited chamber
370: bypass section
381: the first valves
382: the second valves
383: the three valves
384: the four valves
385: the five valves
386: the six valves
Embodiment
To achieve these goals, the source air supplying device that the present invention relates to, it is when adopting chemical vapour deposition technique to carry out film vapor deposition, and supply source gas is characterized in that in deposited chamber, comprising: source gas generating unit, heating source material and generate source gas; The source gas portion of condensing, the source gas that is generated in above-mentioned source gas generating unit flows into condense portion and being condensed of above-mentioned source gas; At this, make source gas flow into the source gas portion of condensing, and source gas is condensed in above-mentioned source gas condenses portion, till the condensation number of the source gas that is condensed in above-mentioned source gas condenses portion reaches capacity condensation number from above-mentioned source gas generating unit; After the condensation number of the source gas that is condensed in above-mentioned source gas condenses portion reaches capacity condensation number, blocking-up source gas flows into above-mentioned source gas from above-mentioned source gas generating unit and condenses in the portion, and makes and condense in the source gas that above-mentioned source gas condenses in the portion and flow in the above-mentioned deposited chamber.
The above-mentioned source gas portion of condensing can comprise first main part and second main part that separates the prescribed distance arranged opposite.
Can also be, with the adjustment of above-mentioned first main part to the adiabatic condensation temperature that is lower than above-mentioned source gas, and with the adjustment of above-mentioned second main part to the adiabatic condensation temperature that is higher than above-mentioned source gas, till the condensation number of the source gas that is condensed in above-mentioned source gas condenses portion reaches capacity condensation number.And the condensation number of the source gas that is condensed in above-mentioned source gas condenses portion reaches capacity after the condensation number, with the adjustment of above-mentioned first main part and above-mentioned second main part to the adiabatic condensation temperature that is higher than above-mentioned source gas.
Can also be that the saturated condensation number of above-mentioned source gas is determined by in the distance between the temperature difference between above-mentioned first main part and above-mentioned second main part and above-mentioned first main part and above-mentioned second main part at least one.
Can also be, on above-mentioned first main part, be connected with first temperature regulation section, on above-mentioned second main part, be connected with second temperature regulation section.
Above-mentioned first main part and above-mentioned second main part can be the platy structure things.
Can also be, above-mentioned first main part be the column structure thing, and above-mentioned second main part is the hollow column structure thing around above-mentioned first main part.
The above-mentioned source gas portion of condensing can be set up in parallel a plurality of.
And, the source air supplying device that the present invention relates to, it is when adopting chemical vapour deposition technique to carry out film vapor deposition, and supply source gas is characterized in that in deposited chamber, comprising: source gas generating unit, heating source material and generate source gas; The gas portion of condensing in source makes at the source gas that above-mentioned source gas generating unit is generated to flow into and condensed; The carrier gas supply unit is used to supply with carrier gas so that the source gas that generates in above-mentioned source gas generating unit successfully flows into the above-mentioned source gas portion of condensing; Sensor part is used to detect by the above-mentioned source gas flow (flow rate) of carrier gas of portion that condenses; At this,, make source gas flow into the source gas portion of condensing, and source gas is condensed in above-mentioned source gas condenses portion from above-mentioned source gas generating unit when above-mentioned detected flow during greater than the flow set in advance; When above-mentioned detected flow was identical in fact with the flow of setting in advance, blocking-up source gas flowed into the above-mentioned source gas portion of condensing from above-mentioned source gas generating unit, and made and condense in the source gas that above-mentioned source gas condenses in the portion and flow in the above-mentioned deposited chamber.
The above-mentioned source gas portion of condensing can be set up in parallel a plurality of.
The above-mentioned source gas portion of condensing can comprise the condense portion and be configured in second of the above-mentioned deposited chamber side portion of condensing of first of above-mentioned source gas generating unit side that is configured in.
Above-mentioned first portion of condensing can be the tubular structure thing.
Above-mentioned second portion of condensing can be the network structure thing.
Can also be that along with source gas condenses on above-mentioned network structure thing, the flow of the carrier gas by above-mentioned network structure thing reduces.
Can also be, when the carrier gas flux of above-mentioned minimizing reached when not condensing active gas on above-mentioned network structure thing the 1/n (integers of n 〉=2) of the carrier gas flux by above-mentioned network structure thing, blocking-up source gas flowed into the above-mentioned source gas portion of condensing from above-mentioned source gas generating unit.
Can also be, condensing above-mentioned first be connected with first temperature regulation section in the portion, and condensing above-mentioned second is connected with second temperature regulation section in the portion.
Between above-mentioned carrier gas supply unit and above-mentioned source gas generating unit, flow control portion can be set, be used to control the carrier gas flux that flows into above-mentioned source gas generating unit.
The invention execution mode
Relevant detailed description of the present invention described later is the accompanying drawing shown in the example with reference to the specific embodiment that can implement with the present invention, and describes these embodiment in detail, so that those of ordinary skill can fully be implemented.Though be interpreted as the mutual difference of a plurality of embodiment of the present invention but repulsion mutually.For example, Ji Zai given shape, structure and characteristic under the situation that does not break away from thought of the present invention and scope, can realize with other embodiment in one embodiment.And, being interpreted as distinguishing the position or the configuration of the indivedual inscapes among disclosed each embodiment, can under the situation that does not break away from thought of the present invention and scope, change.Therefore, detailed description described later and non-limiting the present invention, protection scope of the present invention has impartial FR the qualification by claim and with the opinion of this claim.Same reference numerals is in the accompanying drawings represented identical or identity function on different aspects.
Below, the formation that present invention will be described in detail with reference to the accompanying.
First embodiment
Fig. 2 is the detailed maps of the formation of the source air supplying device 200 that relates to of expression one embodiment of the invention.
With reference to Fig. 2, source air supplying device 200 comprises, the gas passage 280 that source gas generating unit 210, carrier gas supply unit 220, flow control portion 230, source gas condense portion 240, deposited chamber 250, bypass section 260, a plurality of valve 271～276 and connects above-mentioned inscape.
At first, source gas generating unit 210 is utilized heater 214 heating source materials 212, will generate the function of source gas (not shown) from source material 212 to carry out.At this, source material 212 generally exists with solid or liquid condition at normal temperatures as the raw material of the source gas that uses in evaporation process.And heater 214 can be heated to the above temperature of normal temperature with the source material 212 that is present in the source gas generating unit 210, so that source material 212 generating gasification of solid state.
Carrier gas supply unit 220 is supplied with the carrier gas of regulation, and the function of carrying source gas is played in this carrier gas, so that the source gas that is generated in source gas generating unit 210 can successfully be transported to source described later gas condense portion 240, deposited chamber 250 and bypass section 260.Usually, the source gas that is made of metallic element is because than great, thereby therefore its poor mobility needs the independent carrier gas that is used for smooth delivery of power source gas.At this, the carrier gas requirement can not influence evaporation process in the time of light, so preferred specific gravity is little and the gas of reactive difference.For example, carrier gas can comprise argon gas (Ar), nitrogen (N
2) wait inert gas.
Gas a condense end of portion 240 in source is connected with source gas generating unit 210, and the other end is connected with deposited chamber 250 and bypass section 260, and carries out the function that the source gas that flow into source gas generating unit 210 is condensed or evaporates.More particularly, gas condense portion 240 in source carries out following function, that is, the source gas of making condenses, until the condensation number of the source gas that is condensed in source gas condenses portion 240 condensation number that reaches capacity; After the condensation number of the source gas that is condensed in source gas condenses portion 240 reaches capacity condensation number, the source gas that is condensed in source gas condenses portion 240 is flowed in the deposited chamber 250, thereby control flow into source gas flow in the deposited chamber 250 exactly.Below, describe source gas that one embodiment of the invention relate to the condense formation and the operating principle of portion 240 in detail.
According to one embodiment of the invention, the gas portion 240 of condensing in source can comprise first main part 241 and second main part 243 that separates the prescribed distance arranged opposite.At this, first main part 241 and second main part 243 can have multiple shape.As an example, first main part 241 and second main part 243 can be the platy structure things; As another example, first main part 241 can be that column structure thing, second main part 243 can be the hollow column structure things around first main part 241.But the shape of first main part 241 and second main part 243 is not limited thereto, and within the scope that can realize the object of the invention, can suitably change.
And, according to one embodiment of the invention, on first main part 241 and second main part 243, can be connected with first temperature regulation section 242 and second temperature regulation section 244 respectively, can distinguish the temperature of independent regulation first main part 241 and second main part 243 thus.For example, can be with the adjustment of first main part 241 to being lower than the temperature (hereinafter referred to as " source gas adiabatic condensation temperature ") that source gas begins to condense, in contrast, can be with the adjustment of second main part 243 to being higher than source gas adiabatic condensation temperature.But the temperature of first temperature regulation section 242 and second temperature regulation section 244 is not limited thereto, and within the scope that can realize the object of the invention, can suitably change.
According to one embodiment of the invention, the gas of being described in detail in the condense condensation process of the source gas that carries out in the portion 240 in source is as follows.
(i) at first, when source gas begins to flow into source gas and condenses in the portion 240, with the adjustment of first main part 241 when being lower than source gas adiabatic condensation temperature, with the adjustment of second main part 243 to the adiabatic condensation temperature that is higher than source gas, thereby source gas is only condensed in first main part 241.And the source gas that is condensed on first main part 241 can form the layer 245 with specific thickness, and along with source gas continues to condense, the thickness of source gas condensed layer 245 is thickening gradually.
(ii) in addition, because being higher than second main part 243 of source gas adiabatic condensation temperature, design temperature forms with first main part 241 spaced apart and mutually opposedly, therefore, on first main part 241, condense when the source of fully many amounts gas is arranged, the distance of this source gas condensed layer 245 and second main part 243 becomes near, thus, is subjected to the temperatures involved of second main part 243, the temperature on gas condensed layer 245 surfaces, source rises, thereby can make source gas no longer continue to condense.That is, the state of reaching capacity that condenses of the source gas that in source gas condenses portion 240, is carried out, at this moment, source gas condenses only to condense in the portion 240 source of saturated condensation number gas.
(iii) the condensation number of the source gas that is condensed in source gas condenses portion 240 reaches capacity after the condensation number, blocking-up source gas flows into the source gases portion 240 of condensing from source gas generating unit 210, and only make the source gas of the condensing in source gas evaporation of the saturated condensation number of (saying first main part 241 exactly) in the portion 240 that condenses, thereby source gas is flowed in the deposited chamber 250.At this, the means that blocking-up source gas flows into can be carried out by valve 271～276 described later.Specifically, can be positioned at source gas the 4th valve 274 of source gas generating unit 210 sides one end of portion 240 that condenses, thereby blocking-up source gas flows into the source gases portion 240 of condensing from source gas generating unit 210 by closing.
And the source gas of the saturated condensation number that in source gas condenses portion 240, condenses during, can not control the amount of condensing the source gas that portion 240 discharges exactly from source gas, therefore, should directly source gas not flowed in the deposited chamber 250.So, according to one embodiment of the invention, source gas in source gas condenses portion 240, condense during, can utilize valve 275 described later and 276 to come the mobile route of Controlling Source gas, so that do not flow into and flow into bypass section 260 in the deposited chamber 250 by the condense carrier gas of portion 240 and source gas of source gas.
As mentioned above, according to one embodiment of the invention, can only condense in source gas the condenses portion 240 source gas of saturated condensation number regulating the saturated condensation number of above-mentioned source gas, thereby can reach the effect that control exactly flows into the source gas flow in the deposited chamber 250.Below, the gas of being adjusted in the condense specific embodiment of saturated condensation number of the source gas that condenses in the portion 240 in source is described.
According to one embodiment of the invention, can be adjusted in gas the condense saturated condensation number of the source gases that condensed in the portion 240 in source based on the temperature difference of the temperature of the temperature of first main part 241, second main part 243 and first main part 241 and second main part 243.Specifically, when setting the temperature of first main part 241 low, can be increased in the condense saturated condensation number of the source gases that condensed in the portion 240 of source gas; With the temperature of second main part 243 set higher the time, can reduce the saturated condensation number of the source gas that in source gas condenses portion 240, is condensed.And the temperature difference between first main part 241 and second main part 243 is big more, is increased in the condense saturated condensation number of the source gases that condensed in the portion 240 of source gas more.
And, according to one embodiment of the invention, can be based on the distance between first main part 241 and second main part 243, the condense saturated condensation number of the source gases that condensed in the portion 240 of the source gas of being adjusted in.Particularly, the distance between first main part 241 and second main part 243 is long more, be increased in the condense saturated condensation number of the source gases that condensed in the portion 240 of source gas more.
Moreover, according to one embodiment of the invention, when need be than the more source of the saturated condensation number gas in source gas condenses portion 240, can carry out the source gas of the once above saturated condensation number that in source gas condenses portion 240, condenses repeatedly and make this source gas flow into process in deposited chamber 250, thereby can make in the above source gas inflow deposited chamber 250 of saturated condensation number.
And according to a preferred embodiment of the present invention, source air supplying device 200 can comprise the multiple source gas portion 240 of condensing.For example, the multiple source gas portion 240 of condensing is set up in parallel between source gas generating unit 210 and deposited chamber 250, at this moment, the error of the condensation number of the source gas that in each source gas condenses portion 240, is condensed can be offset, thereby the source gas flow that flows in the deposited chamber 250 can be controlled more accurately.
Secondly, deposited chamber 250 is carried out to utilize from the source gas source gas that portion 240 flows into that condenses and is gone up the function that forms regulation thin layer (not shown) at substrate (not shown).At this, adopt chemical vapour deposition technique (Chemical Vapor Deposition:CVD) in deposited chamber 250, to form thin layer, for example, chemical vapour deposition technique can adopt low-pressure chemical vapor deposition (Low Pressure Chemical Vapor Deposition:LPCVD) and plasma enhanced chemical vapor deposition methods such as (Plasma Enhanced Chemical Vapor Deposition:PECVD).
Afterwards, bypass section 260 ejects pressure or the not controlled source of flow gas in source gas condenses the source gas of portion 240 to the outside.For example, bypass section can adopt known air vent hole (vent).
Then, according to different situations, a plurality of valves 271～276 open and close the transfer passage of source gas, carry out the function of adjusting source gas and nebulizer gas pressure and flow.Particularly, first valve 271 and the 3rd valve 273 scalable are by the flow of the carrier gas of carrier gas supply unit 220 supplies, and second valve, 272 scalable are at the flow of the source gas of source gas generating unit 210 generations.And the 4th valve 274, the 5th valve 275 and the 6th valve 276 can be regulated the inflow source gas flow of source gas of portion 240, deposited chamber 250 and bypass section 260 that condenses respectively.
As mentioned above, the source gas that relates to according to one embodiment of the invention portion 240 of condensing can control the amount that flows into the source gas in the deposited chamber 250 exactly.Particularly, the amount or the pressure of the Controlling Source gas that relates to according to one embodiment of the invention, carrying out atomic layer unit or the thin film deposition below it etc. as employing atomic layer deposition method (Atomic Layer Deposition:ALD), during the source gas flow that needs trace to regulate to flow in the deposited chamber, have more effect.
Fig. 3 to Fig. 6 is that the source gas of expression source air supplying device 200 condenses that the inside of portion 240 constitutes and the schematic diagram of an embodiment of action step.As a reference, Fig. 3 to Fig. 6 illustrates the source gas cutaway view of portion 240 that condenses.With reference to Fig. 3 to Fig. 6, the gas of explanation the condense action step of portion 240 in source is as follows.
At first, with reference to Fig. 3, gas condense first main part 241 and second main part 243 of portion 240 in source can be the platy structure thing of arranged opposite spaced apart, and, the temperature that can utilize first temperature regulation section 242 that is connected with first main part 241 and second main part 243 respectively and second temperature regulation section 244 to regulate first main part 241 and second main part 243.And, gas the condense two ends of portion 240 in source can be connected with the transfer passage 280 of source gas, and on transfer passage 280, can connect a plurality of heaters 282, so that more than the temperature maintenance uniform temperature in the transfer passage 280, thereby the source of assurance gas is not condensed in the way of moving.
Secondly, with reference to Fig. 4, source gas condense portion 240 with the adjustment of first main part 241 to the adjustment that is lower than source gas adiabatic condensation temperature, second main part 243 to being higher than source gas adiabatic condensation temperature, thus, source gas can condense on first main part 241.Along with the increase of the condensation number of the source gas that on first main part 241, is condensed and make the thickness thickening of source gas condensed layer 245, up-to-date source gas condenses the position near second main part 243 when (design temperature is higher than source gas adiabatic condensation temperature), the source gas that on source gas condensed layer 245, no longer condenses, the condensation number of the source gases that condensed in the portion 240 thereby the source gas of making the condenses condensation number that reaches capacity.
Afterwards, with reference to Fig. 5, the condensation number of the source gas that is condensed in source gas condenses portion 240 reaches capacity after the condensation number, blocking-up source gas flows into the source gases portion 240 of condensing from source gas generating unit 210, and, the temperature of first main part 241 is brought up to more than the gas adiabatic condensation temperature of source, thus make the source gas of condensing in condense in the portion 240 the source gas evaporation and flow in the deposited chamber 250.
At last, with reference to Fig. 6, the source gases that the source gas of condensing in condenses in the portion 240 are all evaporated, thereby the source gas that can will be equivalent to saturated condensation number exactly flow in the deposited chamber 250.
And Fig. 7 to Figure 10 is that the source gas of expression source air supplying device 200 condenses that the inside of portion 240 constitutes and the schematic diagram of another embodiment of action step.As a reference, Fig. 7 to Figure 10 illustrates the source gas cutaway view of portion 240 that condenses.With reference to Fig. 7 to Figure 10, the gas of explanation the condense action step of portion 240 in source is as follows.
At first, with reference to Fig. 7, can be the column structure thing at condense first main part 241 of portion 240 of source gas, and second main part 243 can be, with first main part, 241 arranged opposite separated by a distance and around the hollow column structure thing of first main part 241.At this, the temperature that can utilize first temperature regulation section 242 that is connected with first main part 241 and second main part 243 respectively and second temperature regulation section 244 to regulate first main part 241 and second main part 243.And, gas the condense two ends of portion 240 in source can be connected with source gas delivery channels (not shown), and go up connection a plurality of heaters (not shown) at transfer passage (not shown), so that the temperature maintenance in the transfer passage (not shown) is more than uniform temperature, thereby guarantee that source gas is not condensed in moving the way.
Secondly, with reference to Fig. 8, source gas condense portion 240 with the adjustment of first main part 241 to the adjustment that is lower than source gas adiabatic condensation temperature, second main part 243 to being higher than source gas adiabatic condensation temperature, therefore, can only on first main part 241, source gas be condensed.Along with the increase of the condensation number of the source gas that on first main part 241, is condensed and make the thickness thickening of source gas condensed layer 245, up-to-date source gas condenses the position near second main part 243 when (design temperature is higher than source gas adiabatic condensation temperature), the source gas that on source gas condensed layer 245, no longer condenses, the condensation number of the source gases that condensed in the portion 240 thereby the source gas of making the condenses condensation number that reaches capacity.
Afterwards, with reference to Fig. 9, the condensation number of the source gas that is condensed in source gas condenses portion 210 reaches capacity after the condensation number, blocking-up source gas flows into the source gases portion 240 of condensing from source gas generating unit 210, and, the temperature of first main part 241 is brought up to more than the gas adiabatic condensation temperature of source, and the source gas evaporation so that the source gas of condensing in condenses in the portion 240 also flows in the deposited chamber 250.
At last, with reference to Figure 10, the source gases that the source gas of condensing in condenses in the portion 240 are all evaporated, thereby the source gas that can will be equivalent to saturated condensation number exactly flow in the deposited chamber 250.
Embodiment 2
Figure 11 is the detailed maps of the formation of the source air supplying device 300 that relates to of expression one embodiment of the invention.
With reference to Figure 11, source air supplying device 300 comprises: the gas passage 390 that source gas generating unit 310, carrier gas supply unit 320, flow control portion 330, source gas condense portion 340, sensor part 350, deposited chamber 360, bypass section 370, a plurality of valve 381～386 and connects above-mentioned inscape.
At first, source gas generating unit 310, carrier gas supply unit 320 and flow control portion 330 carry out identical functions with the source gas generating unit of mentioning among above-mentioned first embodiment 210, carrier gas supply unit 220 and flow control portion 230, and the Therefore, omited describes in detail.
Moreover gas a condense end of portion 340 in source is connected with above-mentioned source gas generating unit 310, and the other end is connected with deposited chamber 360 and bypass section 370, is used to carry out the function that the gas-selectively ground, source that flow in the source gas generating unit 310 are condensed or evaporate.According to one embodiment of the invention, the gas portion 340 of condensing in source is a benchmark with the flow (flow rate) of the carrier gas that detected by sensor part 350 described later, can condense or evaporates gas-selectively ground, source.
And sensor part 350 detects by the source gas pressure or the flow (flow rate) of carrier gas of portion 340 that condense.The pressure of the carrier gas that is detected by sensor part 350 or flow can be used as the decision source described later gas benchmark of type of action (that is, making the action that source gas condenses or the action of source gas evaporation) of portion 340 that condenses.
Below, describe source gas that one embodiment of the invention relate to the condense formation and the operating principle of portion 340 and sensor part 350 in detail.
Figure 12 to Fig. 4 is the source gas of expression source air supplying device 300 schematic diagram of an embodiment of action step of portion 340 that condenses.As a reference, Figure 12 to Figure 14 illustrates the source gas cutaway view of portion 340 that condenses.
At first, with reference to Figure 12, the gas portion 340 of condensing in source can comprise: first condense portion's 341, the first temperature regulation section 343, the second the condense portion 344 and second temperature regulation section 345.At this, first portion of portion 341 of condensing is column structure things, and is configurable in source gas generating unit 310 sides, and second portion 344 of condensing is net (mesh) shape works, configurable in deposited chamber 360 sides.And first temperature regulation section 343 and second temperature regulation section 345 are carried out respectively and are regulated first the condense portion 341 and second function of condensing portion's 344 internal temperatures, and it can comprise predetermined heating device and cooler.In addition, gas the condense two ends of portion 340 in source can be connected with the transfer passage 390 of source gas, on transfer passage 390, can be connected with a plurality of heaters 392, so that more than the maintenance of the temperature in the transfer passage 390 uniform temperature, thereby the source of assurance gas is not condensed in the way of moving.
According to one embodiment of the invention, can be by cooling off first the condense inside of portion 344 of portion 341 or second of condensing, at first the portion 341 or second source gas that condenses respectively in the portion 344 that condenses that condenses.On the contrary, also can make and condense in first condense the source gas evaporation in the portion 344 of portion 341 or second that condenses by heating first condense portion 341 or second inside of condensing portion 344.
Afterwards, with reference to Figure 13, when 350 detected by sensor part, condense the nebulizer gas pressure of portion 340 or flow during by source gas greater than pressure of setting in advance or flow, the gas portion 340 of condensing in source makes source gas flow into source gas to condense in the portion 340, and the cooling source gas inside of portion 340 of condensing, thereby the source gas of the ormal weight that in source gas condenses portion 340, condenses.
According to one embodiment of the invention, in source gas the condense situation of portion 341 of first of portion 340 of condensing, source gas can condense on the inner surface 342 of tubular structure thing, and in source gas the condense situation of portion 344 of second of portion 340 of condensing, source gas can condense on network structure thing 344.Particularly, the second network structure thing 344 that condenses portion 344 has closely knit network structure, can form on source gas condenses the whole passage of deposited chamber 360 sides of portion 340.During the gas that condenses the source on having this closely knit cancellated network structure thing 344 a large amount of, therefore the channel narrows that gas is moved, reduces pressure and flow (flow rate) by the carrier gas of above-mentioned network structure thing 344.
Thus, the phenomenon that the pressure of carrier gas or flow reduce when utilizing aforesaid a large amount of sources gas to condense on the network structure thing 344, source gas condenses on network structure thing 344, up to the pressure of the carrier gas that sensor part 350 is detected and flow reach identical with specified pressure of setting in advance or flow till, thereby can make with the specified pressure of above-mentioned prior setting or flow is corresponding, the source gas of specified quantitative condenses in source gas condenses portion 340.
And, during the source gas of the specified quantitative that in source gas condenses portion 340, condenses, can not control exactly from source gas the condense pressure or the flow of the source gas that portion 340 discharges, therefore, source gas is flowed in the deposited chamber 360.Thus, according to one embodiment of the invention, source gas in source gas condenses portion 340, condense during, can utilize the mobile route of valve 385～386 Controlling Source gases described later, so that do not flow into and flow into bypass section 370 in the deposited chamber 360 by the condense carrier gas of portion 340 and source gas of source gas.
Moreover, with reference to Figure 14,350 detected by sensor part, condense the nebulizer gas pressure of portion 340 or flow and the specified pressure of setting in advance or flow when identical in fact by source gas, can block source gas and flow into the source gas portion 340 of condensing, multi-source gas condenses in source gas condenses portion 340 to avoid more.At this, can utilize valve 384 described later to block the inflow of source gas, particularly, be positioned at the 4th valve 384 that source gas condenses on source gas generating unit 310 sides one end of portion 340 and carry out by closing.
For example, when the 1/n (integers of n 〉=2) of the carrier gas flux by network structure thing 344 owing to condensing in source gas on the network structure thing 344 and carrier gas flux is reduced to do not condense active gas on network structure thing 344, blocking-up source gas flows into the source gases portion 340 of condensing from above-mentioned source gas generating unit 310.
And, as mentioned above, blocking-up source gas flows into after source gas condenses in the portion 340, the gas portion 340 of condensing in source utilizes first temperature regulation section 343 or second temperature regulation section 345, gas portion's 340 temperature inside of condensing in raising source condense in first condense source gases 346 evaporations in the portion 344 of portion 341 or second of condensing thereby can make.As mentioned above, flow into source gas at blocking-up source gas and condense under the state in the portion 340, make to condense in source gas 346 evaporations of the specified quantitative in the portion 340 of condensing of source gas, thereby can control pressure and the flow that flows into the interior source gas of deposited chamber 360 exactly.
In addition, Figure 15 is the source gas of expression source air supplying device 300 schematic diagram of another embodiment of action step of portion 340 that condenses.As a reference, Figure 15 illustrates the source gas cutaway view of portion 340 that condenses.
With reference to Figure 15, source gas first of portion 340 condense the condensing of the source gas that carries out in the portion 344 and evaporation process can independently be carried out respectively of portion 341 and second of condensing of condensing, therefore, can regulate more accurately from condense portion 340 evaporation and flow into the amount of the source gas in the deposited chamber 360 of source gas.Particularly, according to one embodiment of the invention, condense and all condense in the portion 344 after the gas of source in first portion 341 and second of condensing, only evaporation is at the second a spot of source gas that condenses and condense in the portion 344, and do not evaporate the source gas that condenses and condense in the portion 341 first, thus, can regulate the amount that flows into the source gas in the deposited chamber 360 by trace.
As mentioned above, the source gas that relates to according to one embodiment of the invention condense portion 340 and sensor part 350 can be controlled the pressure or the flow that flow into the source gas in the deposited chamber 360 exactly.Particularly, the amount or the pressure of the Controlling Source gas that relates to according to one embodiment of the invention, carrying out atomic layer unit or the thin film deposition below it etc. as employing atomic layer deposition method (Atomic Layer Deposition:ALD), during the source gas flow that needs trace to regulate to flow in the deposited chamber, especially effective.
Moreover according to a preferred embodiment of the present invention, source air supplying device 300 can comprise the multiple source gas portion 340 of condensing.For example, the multiple source gas portion 340 of condensing is set up in parallel between source gas generating unit 310 and deposited chamber 360, at this moment, can offset the error of the source gas condensation number that in each source gas condenses portion 340, condenses, therefore, can control pressure or the flow that flows into the source gas in the deposited chamber 360 more accurately.
In addition, deposited chamber 360, bypass section 370 and a plurality of valve 381～386 are carried out identical functions with the deposited chamber of mentioning among above-mentioned first embodiment 250, bypass section 260 and a plurality of valve 271～276, and the Therefore, omited describes in detail.
Though the present invention exemplifies aforesaid preferred embodiment and is illustrated, and is not limited to the foregoing description, in not breaking away from thought range of the present invention, the technical staff of the technical field of the invention can carry out various deformation and variation.These variation and variation all belong within the claim scope of the present invention.
Claims (17)
1. a source air supplying device when adopting chemical vapour deposition technique to carry out film vapor deposition, to deposited chamber supply source gas, is characterized in that, comprising:
Source gas generating unit, heating source material and generate source gas; And
The source gas portion of condensing, the source gas that generates in above-mentioned source gas generating unit flows into condense portion and being condensed of above-mentioned source gas;
Wherein, make source gas flow into the above-mentioned source gas portion of condensing, and source gas is condensed in the above-mentioned source gas portion of condensing, till the condensation number of the source gas that condenses in the above-mentioned source gas portion of condensing reaches capacity condensation number from above-mentioned source gas generating unit; After the condensation number of the source gas that condenses in the above-mentioned source gas portion of condensing reached capacity condensation number, blocking-up source gas flowed into the above-mentioned source gas portion of condensing from above-mentioned source gas generating unit, and made and condense in the condense source gas of portion of above-mentioned source gas and flow into above-mentioned deposited chamber.
2. source air supplying device according to claim 1 is characterized in that,
The above-mentioned source gas portion of condensing comprises first main part and second main part that separates the prescribed distance arranged opposite.
3. source air supplying device according to claim 2 is characterized in that,
With the adjustment of above-mentioned first main part to the adiabatic condensation temperature that is lower than above-mentioned source gas, and with the adjustment of above-mentioned second main part to the adiabatic condensation temperature that is higher than above-mentioned source gas, till the condensation number of the source gas that condenses in the above-mentioned source gas portion of condensing reaches capacity condensation number;
After the condensation number of the source gas that condenses in the above-mentioned source gas portion of condensing reaches capacity condensation number, with the adjustment of above-mentioned first main part and above-mentioned second main part to the adiabatic condensation temperature that is higher than above-mentioned source gas.
4. source air supplying device according to claim 3 is characterized in that,
The saturated condensation number of above-mentioned source gas is determined by in the distance between the temperature difference between above-mentioned first main part and above-mentioned second main part and above-mentioned first main part and above-mentioned second main part at least one.
5. source air supplying device according to claim 2 is characterized in that,
On above-mentioned first main part, be connected with first temperature regulation section, on above-mentioned second main part, be connected with second temperature regulation section.
6. source air supplying device according to claim 2 is characterized in that,
Above-mentioned first main part and above-mentioned second main part are the platy structure things.
7. source air supplying device according to claim 2 is characterized in that,
Above-mentioned first main part is the column structure thing, and above-mentioned second main part is the hollow column structure thing around above-mentioned first main part.
8. source air supplying device according to claim 1 is characterized in that,
The above-mentioned source gas portion of condensing is set side by side with a plurality of.
9. a source air supplying device when adopting chemical vapour deposition technique to carry out film vapor deposition, to deposited chamber supply source gas, is characterized in that, comprising:
Source gas generating unit, heating source material and generate source gas;
The source gas portion of condensing, the source gas that generates in above-mentioned source gas generating unit flows into condense portion and being condensed of above-mentioned source gas;
The carrier gas supply unit is used to supply with carrier gas so that the source gas that generates in above-mentioned source gas generating unit successfully flows into the above-mentioned source gas portion of condensing; And
Sensor part is used to detect by the above-mentioned source gas carrier gas flux of portion that condenses;
When above-mentioned detected flow during, make source gas flow into the above-mentioned source gas portion of condensing, and source gas is condensed in the above-mentioned source gas portion of condensing from above-mentioned source gas generating unit greater than the flow set in advance; When above-mentioned detected flow was identical in fact with the flow of setting in advance, blocking-up source gas flowed into the above-mentioned source gas portion of condensing from above-mentioned source gas generating unit, and made and condense in the source gas that above-mentioned source gas condenses in the portion and flow into above-mentioned deposited chamber.
10. source air supplying device according to claim 9 is characterized in that,
The above-mentioned source gas portion of condensing is set side by side with a plurality of.
11. source air supplying device according to claim 9 is characterized in that,
The above-mentioned source gas portion of condensing comprises the condense portion and be configured in second of the above-mentioned deposited chamber side portion of condensing of first of above-mentioned source gas generating unit side that is configured in.
12. source air supplying device according to claim 11 is characterized in that,
Above-mentioned first portion of condensing is the tubular structure thing.
13. source air supplying device according to claim 11 is characterized in that,
Above-mentioned second portion of condensing is the network structure thing.
14. source air supplying device according to claim 13 is characterized in that,
Along with source gas condenses on above-mentioned network structure thing, by the carrier gas flux minimizing of above-mentioned network structure thing.
15. source air supplying device according to claim 14 is characterized in that,
When the carrier gas flux of above-mentioned minimizing reaches when not condensing active gas on above-mentioned network structure thing the 1/n of the carrier gas flux by above-mentioned network structure thing, blocking-up source gas flows into the above-mentioned source gas portion of condensing from above-mentioned source gas generating unit, wherein, n is the integer more than or equal to 2.
16. source air supplying device according to claim 11 is characterized in that,
Condensing above-mentioned first is connected with first temperature regulation section in the portion, and condensing above-mentioned second is connected with second temperature regulation section in the portion.
17. source air supplying device according to claim 9 is characterized in that,
Be provided with flow control portion between above-mentioned carrier gas supply unit and above-mentioned source gas generating unit, this flow control portion is used to control the carrier gas flux that flows into above-mentioned source gas generating unit.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2008-0096453 | 2008-10-01 | ||
| KR1020080096453A KR101064306B1 (en) | 2008-10-01 | 2008-10-01 | Apparatus For Supplying Source Gas |
| KR1020080106630A KR101126106B1 (en) | 2008-10-29 | 2008-10-29 | Apparatus For Supplying Source Gas |
| KR10-2008-0106630 | 2008-10-29 | ||
| PCT/KR2009/005584 WO2010038972A2 (en) | 2008-10-01 | 2009-09-30 | Source gas supply apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102165560A true CN102165560A (en) | 2011-08-24 |
| CN102165560B CN102165560B (en) | 2013-02-13 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200980138274.4A Expired - Fee Related CN102165560B (en) | 2008-10-01 | 2009-09-30 | Source gas supply apparatus |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2012504703A (en) |
| CN (1) | CN102165560B (en) |
| TW (1) | TW201022468A (en) |
| WO (1) | WO2010038972A2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109321895A (en) * | 2017-07-31 | 2019-02-12 | 北京北方华创微电子装备有限公司 | A kind of charge delivery mechanism and its air inlet method for ALD technique |
| CN111511961A (en) * | 2017-12-07 | 2020-08-07 | 恩特格里斯公司 | Chemical delivery system and method of operating the same |
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| JP2004015005A (en) * | 2002-06-11 | 2004-01-15 | Murata Mfg Co Ltd | Thin film manufacturing apparatus and method |
| US20060144338A1 (en) * | 2004-12-30 | 2006-07-06 | Msp Corporaton | High accuracy vapor generation and delivery for thin film deposition |
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- 2009-09-30 JP JP2011529993A patent/JP2012504703A/en active Pending
- 2009-09-30 WO PCT/KR2009/005584 patent/WO2010038972A2/en active Application Filing
- 2009-09-30 CN CN200980138274.4A patent/CN102165560B/en not_active Expired - Fee Related
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| JP3331957B2 (en) * | 1998-03-31 | 2002-10-07 | 株式会社豊田中央研究所 | Surface treatment method for structure to be treated |
| EP1018527A2 (en) * | 1998-12-09 | 2000-07-12 | Applied Materials, Inc. | Nano-porous copolymer films having low dielectric constants |
| CN101090992A (en) * | 2005-09-14 | 2007-12-19 | 松下电器产业株式会社 | Method and apparatus for manufacturing protective layer |
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| CN111511961A (en) * | 2017-12-07 | 2020-08-07 | 恩特格里斯公司 | Chemical delivery system and method of operating the same |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201022468A (en) | 2010-06-16 |
| JP2012504703A (en) | 2012-02-23 |
| WO2010038972A3 (en) | 2010-07-01 |
| CN102165560B (en) | 2013-02-13 |
| WO2010038972A2 (en) | 2010-04-08 |
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