KR101126106B1 - Apparatus For Supplying Source Gas - Google Patents

Abstract

Disclosed is a source gas supply apparatus for gasifying a source material, which is a raw material, when a thin film is deposited by a chemical vapor deposition method, into a deposition chamber. Source gas supply apparatus 200 according to the present invention includes a source gas generator 210 for heating the source material to generate a source gas; And a source gas condenser 240 in which the source gas generated by the source gas generator 210 is introduced and condensed, wherein the amount of condensation of the source gas 245 condensed in the source gas condenser 240 is saturated. Source gas is introduced from the source gas condenser 240 to the source gas condenser 240 until it reaches the condensed source gas in the source gas condenser 240, and the source gas condenser 240 After the condensation amount of the condensed source gas 245 reaches the saturated condensation amount, the source gas is blocked from the source gas generating unit 210 to the source gas condensing unit 240 and condensed in the source gas condensing unit 240. Characterized in that the source gas is introduced into the deposition chamber 250.

Chemical vapor deposition, source gas, carrier gas, thin film deposition, pressure control, flow control

Description

Apparatus For Supplying Source Gas

The present invention relates to a source gas supply device that can control the pressure of the source gas in the deposition chamber during the thin film deposition by chemical vapor deposition. More specifically, the present invention relates to a source gas supply device capable of accurately controlling the pressure of the source gas in the deposition chamber by introducing only the source gas corresponding to the saturated condensation amount into the deposition chamber.

Thin film deposition by Chemical Vapor Deposition (CVD) is very technically applicable in many applications such as insulating layers and active layers of semiconductor devices, transparent electrodes of liquid crystal display devices, light emitting layers of electroluminescent display devices, and protective layers. It is important. In general, physical properties of thin films deposited by CVD are very sensitive to CVD process conditions such as deposition pressure, deposition temperature, and deposition time. For example, the composition, density, adhesion, deposition rate, and the like of the thin film to be deposited may vary depending on the deposition pressure.

In the case of CVD, the deposition pressure is directly influenced by the flow rate of the source gas (ie, the pressure of the source gas) supplied from the source gas supplier supplying the raw material of the thin film material to be deposited. That is, in order to properly control the deposition pressure in the CVD, first of all, the flow rate of the source gas of the source gas supply device must be accurately adjusted. In particular, when the deposition rate needs to be precisely and constantly adjusted, the importance of controlling the flow rate of the source gas becomes more important.

1 is a view showing the configuration of a conventional source gas supply device (100). The conventional source gas supply device 100 is a source gas generating unit 110, a heater 130, a carrier gas supply unit 140, a deposition chamber 150 and a plurality of source material 120 to generate a source gas Of the valves (161 to 164).

In general, since the source material 120 exists in a solid or liquid state at room temperature, in order for the source material 120 to be source gasized, the source material 120 needs to be heated to a temperature higher than or equal to room temperature. It is used as a heating means of the material 120.

Typically, since the source gas is inferior in mobility due to its high specific gravity, the carrier gas is assisted to smoothly move the source gas into the deposition chamber 150. The plurality of valves 161 to 164 open and close according to circumstances to adjust the flow rate or pressure of the source gas and the carrier gas. For example, when no carrier gas is used, the valves 161 and 163 are closed.

However, the conventional source gas supply device 100 has the following problems. First, since the volatility of the source material 120 changes depending on the amount of source material 120 remaining in the source gas generator 110, only the opening and closing of the valve 162 can accurately adjust the pressure of the source gas. There will be no. In addition, if the volatilization and condensation process of the source material 120 is repeated by heating the source material 120, the volatilization surface of the source material 120 is changed to change the volatility of the source material 120, so that the source It is difficult to adjust the pressure of the gas accurately. In particular, when the source material 120 is in the form of powder, since the change in the surface condition of the source material 120 becomes larger, the above problem becomes more serious.

Accordingly, the present invention has been made to solve the problems of the prior art as described above, and an object of the present invention is to provide a source gas supply device that can accurately control the pressure of the source gas in the deposition chamber during thin film deposition by chemical vapor deposition method. do.

In order to achieve the above object, the source gas supply apparatus according to the present invention is a source gas supply device for supplying the source gas to the deposition chamber during the thin film deposition by chemical vapor deposition method, the source material is heated to generate the source gas Source gas generating unit; And a source gas condensation unit in which the source gas generated in the source gas generating unit is introduced and condensed, from the source gas generating unit until the amount of condensation of the source gas condensed in the source gas condensing unit reaches a saturated condensation amount. The source gas is introduced into the source gas condenser to condense the source gas to the source gas condenser, and after the condensation amount of the source gas condensed to the source gas condenser reaches the saturated condensation amount, the source gas generator It is characterized in that the inlet of the source gas from the source gas condensation unit from the source gas condensation unit is blocked and the source gas condensed in the source gas condensation unit is introduced into the deposition chamber.

The source gas condensation part may include a first body part and a second body part disposed to face each other at a predetermined distance.

The temperature of the first body portion is lower than the condensation temperature of the source gas and the temperature of the second body portion is higher than the condensation temperature of the source gas until the amount of condensation of the source gas condensed on the source gas condensation reaches a saturated condensation amount. Highly adjusted, after the condensation amount of the source gas condensed in the source gas condensation unit reaches the saturated condensation amount, the temperature of the first body portion and the second body portion may be adjusted higher than the condensation temperature of the source gas.

The saturated condensation amount of the source gas may be determined according to at least one of a temperature difference between the first body part and the second body part and a distance between the first body part and the second body part.

A first temperature controller may be connected to the first body, and a second temperature controller may be connected to the second body.

The first body portion and the second body portion may be a plate structure.

The first body portion may be a pillar structure, and the second body portion may be a hollow pillar structure surrounding the first body portion.

A plurality of the source gas condensation unit may be installed in parallel.

The source gas supply apparatus according to the present invention is a deposition process made in the deposition chamber by precisely controlling the amount of source gas flowing into the deposition chamber regardless of the state of the source material in the source gas generating unit during the thin film deposition by chemical vapor deposition method There is an effect that can accurately control the deposition pressure.

DETAILED DESCRIPTION OF THE INVENTION The following detailed description of the invention refers to the accompanying drawings that show, by way of illustration, specific embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. It should be understood that the various embodiments of the present invention are different but need not be mutually exclusive. For example, certain shapes, structures, and characteristics described herein may be embodied in other embodiments without departing from the spirit and scope of the invention with respect to one embodiment. It is also to be understood that the position or arrangement of the individual components within each disclosed embodiment may be varied without departing from the spirit and scope of the invention. The following detailed description, therefore, is not to be taken in a limiting sense, and the scope of the present invention is defined only by the appended claims, along with the full range of equivalents to which such claims are entitled. Like reference numerals in the drawings refer to the same or similar functions throughout the several aspects.

Hereinafter, the configuration of the present invention will be described in detail with reference to the accompanying drawings.

2 is a view showing in detail the configuration of the source gas supply apparatus 200 according to an embodiment of the present invention.

2, the source gas supply device 200 includes a source gas generator 210, a carrier gas supplier 220, a flow rate controller 230, a source gas condenser 240, and a deposition chamber 250. The pass portion 260 includes a plurality of valve portions 271 to 276 and a gas passage 280 connecting the components.

First, the source gas generator 210 heats the source material 212 using the heater 214 to perform a function of generating a source gas (not shown) from the source material 212. Here, the source material 212 is a raw material of the source gas used in the deposition process, and generally exists in a solid or liquid state at room temperature. Meanwhile, the heater 214 may heat the source material 212 at a temperature higher than or equal to room temperature in order to source gasify the source material 212 in a solid state existing in the source gas generator 210.

The carrier gas supply unit 220 sources the source gas generated by the source gas generator 210 so that the source gas can be smoothly transferred to the source gas condenser 240, the deposition chamber 250, and the bypass unit 260 which will be described later. Supply a predetermined carrier gas serving to carry the gas. In general, since the source gas made of a metal element has a high specific gravity and low mobility, a separate carrier gas is required as a means for smoothly transferring the source gas. Here, since the carrier gas should be light and should not affect the deposition process, it is preferable that the specific gravity is low and the reactivity is low. For example, the carrier gas may include an inert gas such as argon (Ar), nitrogen (N ₂ ), and the like.

The flow rate controller 230 detects and controls the flow rate of the carrier gas supplied from the carrier gas supply unit 220. According to an embodiment of the present invention, the flow rate control unit 230 stabilizes the supply of the carrier gas so that the carrier gas can be stably supplied to the source gas generator 210 and the source gas condenser 240 to be described later. .

The source gas condenser 240 is a component connected to the source gas generator 210 at one end thereof and connected to the deposition chamber 250 and the bypass part 260. It serves to condense or volatilize the incoming source gas. More specifically, the source gas condenser 240 condenses the source gas until the amount of condensation of the source gas condensed in the source gas condenser 240 reaches the saturation condensation amount, and the source gas condenser 240 After the condensed amount of the condensed source gas reaches the saturated condensed amount, the source gas condensed in the source gas condensing unit 240 is introduced into the deposition chamber 250, so that the amount of source gas introduced into the deposition chamber 250 is increased. It performs the function of controlling precisely. Hereinafter, the configuration and operation principle of the source gas condensation unit 240 according to an embodiment of the present invention will be described in detail.

According to an embodiment of the present invention, the source gas condensation unit 240 may include a first body portion 241 and a second body portion 243 disposed to face each other at a predetermined distance. Here, the first body portion 241 and the second body portion 243 may be formed in various shapes, for example, the first body portion 241 and the second body portion 243 may be a plate structure, other For example, the first body portion 241 may be a pillar structure, and the second body portion 243 may be a hollow pillar structure surrounding the first body portion 241. However, the shapes of the first body portion 241 and the second body portion 243 are not limited thereto, and may be changed appropriately within a range capable of achieving the object of the present invention.

Meanwhile, according to an embodiment of the present invention, the first temperature controller 242 and the second temperature controller 244 may be connected to the first body 241 and the second body 243, respectively. Accordingly, the temperatures of the first body portion 241 and the second body portion 243 may be adjusted independently of each other. For example, the temperature of the first body portion 241 may be adjusted to be lower than the temperature at which the source gas starts to condense (hereinafter referred to as "condensation temperature of the source gas"), on the contrary, the second body portion ( The temperature of 243 may be adjusted higher than the condensation temperature of the source gas. However, the temperature of the first temperature control unit 242 and the second temperature control unit 244 is not limited thereto, and may be appropriately changed within a range capable of achieving the object of the present invention. will be.

According to an embodiment of the present invention, the condensation process of the source gas performed in the source gas condensation unit 240 will be described in detail as follows.

(i) First, when source gas starts to flow into the source gas condenser 240, the temperature of the first body 241 is controlled to be lower than the condensation temperature of the source gas, and at the same time, the temperature of the second body 243. By controlling the higher than the condensation temperature of the source gas, the source gas can be condensed only in the first body portion 241. In addition, the source gas condensed on the first body 241 may form a layer 245 having a predetermined thickness, and as the source gas continues to condense, the thickness of the condensed source gas layer 245 becomes thicker. Can lose.

(ii) On the other hand, since the second body portion 243 set to a temperature higher than the condensation temperature of the source gas is formed to face the first body portion 241 at a predetermined distance, When a sufficient amount of source gas is condensed, the condensed source gas layer 245 is closer to the distance from the second body portion 243, and thus, the source gas layer condensed due to the high temperature of the second body portion 243. (245) The temperature of the surface may rise and the source gas may no longer condense. That is, condensation of the source gas formed in the source gas condensation unit 240 reaches a saturation state. At this time, only source gas having a saturated condensation amount is condensed in the source gas condensation unit 240.

(iii) after the condensation amount of the source gas condensed in the source gas condensation unit 240 reaches the saturated condensation amount, the inflow of the source gas from the source gas generating unit 210 to the source gas condensing unit 240 is blocked. The source gas can be introduced into the deposition chamber 250 by volatilizing only the source gas having a saturated condensation amount condensed on the source gas condensation unit 240 (exactly, the first body portion 241). Here, blocking the introduction of the source gas may be performed by the valve parts 271 to 276 which will be described later. Specifically, the first gas is disposed at one end of the source gas condenser 240 on the source gas condenser 240. By locking the four valves 274, the inflow of the source gas from the source gas generator 210 to the source gas condenser 240 may be blocked.

On the other hand, during the condensation of the source gas of the saturated condensation amount in the source gas condensation unit 240, since the amount of the source gas discharged from the source gas condensation unit 240 can not be accurately controlled, this is directly in the deposition chamber 250 Inflow is not desirable. Therefore, according to an embodiment of the present invention, the carrier gas and the source gas passing through the source gas condensation unit 240 while the source gas is condensed in the source gas condensation unit 240 are not the deposition chamber 250. The flow path of the source gas may be controlled by using the valve parts 275 and 276 which will be described later to flow into the pass part 260.

As described above, according to an embodiment of the present invention, since only the source gas having a saturated condensation amount may be condensed on the source gas condensation unit 240, the deposition chamber 250 may be controlled by adjusting the saturated condensation amount of the source gas. The effect of being able to accurately control the amount of source gas introduced into the furnace is achieved. Hereinafter, a specific embodiment of controlling the saturated condensation amount of the source gas condensed on the source gas condensation unit 240 will be described.

According to one embodiment of the invention, the source according to the temperature of the first body portion 241, the temperature of the second body portion 243 and the temperature difference between the first body portion 241 and the second body portion 243 The saturated condensation amount of the source gas condensed on the gas condenser 240 may be adjusted. Specifically, when the temperature of the first body portion 241 is set lower, the saturated condensation amount of the source gas condensed on the source gas condensation unit 240 may increase, and the temperature of the second body portion 243 may be increased. When set high, the saturated condensation amount of the source gas condensed on the source gas condensation unit 240 may be reduced. As the temperature difference between the first body part 241 and the second body part 243 increases, the saturated condensation amount of the source gas condensed on the source gas condensation part 240 may increase.

Further, according to an embodiment of the present invention, the saturation condensation amount of the source gas condensed on the source gas condensation unit 240 may be adjusted according to the distance between the first body part 241 and the second body part 243. have. Specifically, as the distance between the first body part 241 and the second body part 243 increases, the saturated condensation amount of the source gas condensed on the source gas condensation part 240 may increase.

In addition, according to an embodiment of the present invention, when a larger amount of source gas is required than the saturation condensation amount of the source gas condensation unit 240, the condensation amount of the source gas of the saturation condensation amount is condensed in the source gas condensation unit 240. In this case, the process of introducing the same into the deposition chamber 250 may be repeatedly performed one or more times, thereby allowing the source gas of the saturated condensation amount or more to flow into the deposition chamber 250.

On the other hand, according to an embodiment of the present invention, the source gas supply apparatus 200 may include a plurality of source gas condensation unit 240. For example, a plurality of source gas condensing unit 240 may be installed in parallel between the source gas generating unit 210 and the deposition chamber 250, in this case is condensed in each source gas condensing unit 240 Since the errors in the amount of condensation of the source gas may be offset, the amount of source gas introduced into the deposition chamber 250 may be more accurately controlled.

Next, the deposition chamber 250 performs a function of forming a predetermined thin film layer (not shown) on the substrate (not shown) by using the source gas introduced from the source gas condenser 240. Here, the deposition chamber 250 may form a thin film layer by using chemical vapor deposition (CVD), for example, LPCVD (Low Pressure Chemical Vapor Deposition) and PECVD (Plasma Enhanced Chemical Vapor). Deposition) may be applied.

Next, the bypass unit 260 discharges the source gas whose pressure or flow rate is not controlled in the source gas delivered from the source gas condenser 240 to the outside. For example, a known vent may be employed as the bypass portion 260.

Next, the plurality of valve parts 271 to 276 performs a function of adjusting the pressure to the flow rate of the source gas and the carrier gas by opening and closing the delivery passage of the source gas according to the situation. Specifically, the first valve portion 271 and the third valve portion 273 adjust the flow rate of the carrier gas supplied from the carrier gas supply unit 220, and the second valve unit 272 is a source gas generator ( The flow rate of the source gas generated from 210 may be adjusted. In addition, the fourth valve part 274, the fifth valve part 275, and the sixth valve part 276 are respectively introduced into the source gas condensation part 240, the deposition chamber 250, and the bypass part 260. The flow rate of the source gas can be adjusted.

As mentioned above, according to the source gas condensation unit 240 according to an embodiment of the present invention, it is possible to accurately control the amount of source gas flowing into the deposition chamber 250. In particular, the amount or pressure control of the source gas according to an embodiment of the present invention is a source gas introduced into the deposition chamber, such as when depositing a thin film of atomic layer or less, such as atomic layer deposition (ALD) It is more effective when it is necessary to finely adjust the amount of.

3A to 3D are views illustrating an example of an internal configuration and an operation step of the source gas condenser 240 of the source gas supply device 200. For reference, FIGS. 3A to 3D are cross-sectional views of the source gas condensation unit 240 by way of example. 3A to 3D, operation steps of the source gas condenser 240 will be described as follows.

First, referring to FIG. 3A, the first body part 241 and the second body part 243 of the source gas condensation part 240 may be plate structures disposed to face each other at a predetermined distance. The first body part 241 and the second body part 243 of the first body part 241 and the second body part 243 using the first temperature adjusting part 242 and the second temperature adjusting part 244 respectively connected to the 241 and the second body part 243. The temperature can be adjusted. On the other hand, both ends of the source gas condensation unit 240 may be connected to the delivery passage 280 of the source gas, the delivery passage 280 is a predetermined temperature to the temperature in the delivery passage 280 so that the source gas is not condensed during the movement A plurality of heaters 282 to maintain the above can be connected.

Next, referring to FIG. 3B, the source gas condenser 240 adjusts the temperature of the first body 241 to be lower than the condensation temperature of the source gas and adjusts the temperature of the second body 243 to the source gas. By adjusting the temperature higher than the condensation temperature, the source gas may be condensed only in the first body part 241. As the amount of condensation of the source gas 245 condensed on the first body part 241 increases and the thickness of the condensed source gas layer 245 becomes thick, the position where the source gas is newly condensed is changed to the second body part 243. (Closer to a temperature higher than the condensation temperature of the source gas), the source gas is no longer condensed on the condensed source gas layer 245, so that the condensation of the source gas condensed in the source gas condensation unit 240 is achieved. Amount will reach the saturated condensation amount.

Next, referring to FIG. 3C, after the condensation amount of the source gas condensed in the source gas condenser 240 reaches the saturation condensation amount, the source gas is condensed from the source gas condenser 240 to the source gas condenser 240. By blocking the inflow of gas and raising the temperature of the first body portion 241 above the condensation temperature of the source gas, the source gas condensed in the source gas condensation unit 240 is volatilized and introduced into the deposition chamber 250. Can be.

Finally, referring to FIG. 3D, the source gas corresponding to the saturated condensation amount can be introduced into the deposition chamber 250 by volatilizing all the source gas condensed in the source gas condenser 240.

4A to 4D are diagrams illustrating another example of an internal configuration and an operation step of the source gas condenser 240 of the source gas supply device 200. For reference, FIGS. 4A to 4D are views exemplarily illustrating a cross section of the source gas condenser 240. 4A to 4D, operation steps of the source gas condenser 240 will be described as follows.

First, referring to FIG. 4A, the first body part 241 of the source gas condensation part 240 may be a pillar structure, and the second body part 243 may be spaced apart from the first body part 241 at a predetermined distance. The hollow pillar structure may be disposed to face each other and surround the first body portion 241. Here, the first body part 241 and the second using the first temperature control unit 242 and the second temperature control unit 244 respectively connected to the first body unit 241 and the second body unit 243. The temperature of the body portion 243 may be adjusted. On the other hand, both ends of the source gas condensation unit 240 may be connected to the delivery passage (not shown) of the source gas, the delivery passage (not shown), the delivery passage (not shown) so as not to condense during the movement of the source gas A plurality of heaters (not shown) may be connected to maintain the temperature in the above).

Next, referring to FIG. 4B, the source gas condenser 240 adjusts the temperature of the first body 241 to be lower than the condensation temperature of the source gas, and controls the temperature of the second body 243 to condense the source gas. By adjusting the temperature higher than the temperature, the source gas can be condensed only in the first body part 241. As the amount of condensation of the source gas 245 condensed on the first body part 241 increases and the thickness of the condensed source gas layer 245 becomes thick, the position where the source gas is newly condensed is changed to the second body part 243. (Closer to a temperature higher than the condensation temperature of the source gas), the source gas is no longer condensed on the condensed source gas layer 245, so that the condensation of the source gas condensed in the source gas condensation unit 240 is achieved. Amount will reach the saturated condensation amount.

Next, referring to FIG. 4C, after the condensation amount of the source gas condensed in the source gas condensation unit 240 reaches the saturation condensation amount, the source gas is condensed from the source gas generating unit 210 to the source gas condensing unit 240. By blocking the inflow of gas and raising the temperature of the first body portion 241 above the condensation temperature of the source gas, the source gas condensed in the source gas condensation unit 240 is volatilized and introduced into the deposition chamber 250. Can be.

Finally, referring to FIG. 4D, the source gas corresponding to the saturated condensation amount may be introduced into the deposition chamber 250 by volatilizing all of the source gas condensed in the source gas condenser 240.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken in conjunction with the present invention. Variations and changes are possible. Such modifications and variations are intended to fall within the scope of the invention and the appended claims.

1 is a view showing the configuration of a conventional source gas supply device (100).

2 is a view showing the configuration of a source gas supply device 200 according to an embodiment of the present invention.

3A to 3D are views illustrating an example of an internal configuration and an operation step of the source gas condenser 240 of the source gas supply device 200.

4A to 4D are diagrams illustrating another example of the internal configuration and operation steps of the source gas condenser 240 of the source gas supply device 200.

<Explanation of symbols for the main parts of the drawings>

200: source gas supply device

210: source gas generating unit

212 source material

214: heater

220: carrier gas supply unit

230: flow control

240: source gas condensing unit

241: first body portion

242: first temperature control unit

243: second body portion

244: second temperature control unit

245: condensed source gas

250: deposition chamber

260: bypass unit

271: first valve portion

272: second valve portion

273: third valve portion

274: fourth valve portion

275: fifth valve portion

276: sixth valve section

Claims (8)

A source gas supply device for supplying a source gas to the deposition chamber during the thin film deposition by chemical vapor deposition method, A source gas generator for heating the source material to generate a source gas; And A source gas condenser that condenses the source gas generated by the source gas generator; And A valve disposed between the source gas generator and a gas passage connecting the source gas condenser , &Lt; / RTI & The valve is opened until the condensation amount of the source gas condensed in the source gas condensation unit reaches a saturated condensation amount, and the source gas is introduced from the source gas generating unit to the source gas condensing unit. After condensing the source gas, and the condensation amount of the source gas condensed in the source gas condensation reaches the saturated condensation amount, the valve is blocked to block the inflow of the source gas from the source gas generating unit to the source gas condensing unit. And a source gas condensed in the source gas condensing unit into the deposition chamber. The method of claim 1, The source gas condenser comprises a first body portion and a second body portion disposed to face each other at a predetermined distance. 3. The method of claim 2, The temperature of the first body portion is lower than the condensation temperature of the source gas and the temperature of the second body portion is higher than the condensation temperature of the source gas until the amount of condensation of the source gas condensed on the source gas condensation reaches a saturated condensation amount. Adjustable high, After the condensation amount of the source gas condensed in the source gas condensation unit reaches the saturated condensation amount, the temperature of the first body portion and the second body portion is controlled to be higher than the condensation temperature of the source gas supply Device. The method of claim 3, Saturated condensation amount of the source gas is determined according to at least one of the temperature difference between the first body portion and the second body portion and the distance between the first body portion and the second body portion. Feeder. 3. The method of claim 2, And a first temperature controller is connected to the first body, and a second temperature controller is connected to the second body. 3. The method of claim 2, The first body portion and the second body portion source gas supply device, characterized in that the plate structure. 3. The method of claim 2, And the first body portion is a pillar structure and the second body portion is a hollow pillar structure surrounding the first body portion. The method of claim 1, Source gas supply apparatus, characterized in that the plurality of source gas condensation unit is installed in parallel.

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