CN101381863B - Source gas supply device - Google Patents
Source gas supply device Download PDFInfo
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- CN101381863B CN101381863B CN2008102127637A CN200810212763A CN101381863B CN 101381863 B CN101381863 B CN 101381863B CN 2008102127637 A CN2008102127637 A CN 2008102127637A CN 200810212763 A CN200810212763 A CN 200810212763A CN 101381863 B CN101381863 B CN 101381863B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Abstract
The present invention provides a source gas supply device for supplying a source substance gasified as a raw material at film vapor deposition by a chemical vapor deposition method. The source gas supply device (100) is characterized by comprising a source substance evaporating part (110) for heating the source substance (120) to generate a source gas, and a standby chamber (150) standing by before the source gas enters a vapor deposition chamber, wherein a deposition plate (160) for depositing the source gas is arranged in the standby chamber (150). Before heating and gasifying the source gases deposited on the deposition plate, the source gases which are not adsorbed on the deposition plate in the standby chamber are discharged. The source gas supply device can accurately control the amount of the source gas flowing into the vapor deposition chamber, so as to effectively adjust vapor deposition pressure in the vapor deposition chamber at film vapor deposition.
Description
Ji Intraoperative field
The present invention relates to when the film vapor deposition that adopts chemical Vapor deposition process to carry out, regulate the source air supplying device of solid material flow.In more detail, the present invention relates to a kind of source air supplying device, it owing to the amount that can control the source gas in the inflow deposited chamber accurately and real-time, thereby can regulate the interior evaporation pressure of deposited chamber effectively when the film vapor deposition that adopts chemical Vapor deposition process to carry out.
Background technology
The film vapor deposition that adopts chemical Vapor deposition process (Chemical Vapor Deposition:CVD) is very important in the application in various fields such as the luminescent layer of the transparency electrode of the insulation layer of semiconductor element and active layer, liquid crystal display device, electroluminescence display element and protective layer technically.In general, the rerum natura of the film of employing CVD evaporation is subjected to the influence of CVD process conditions such as evaporation pressure, evaporation temperature, evaporation time very sensitively.For example, along with the variation of evaporation pressure, the composition of evaporated film, density, cohesive force, evaporation rate etc. will change.
Under the CVD situation, evaporation pressure is subjected to the direct influence of the source gas flow (being the source gaseous tension) supplied with by the source air supplying device of the film substrate raw material of supplying with evaporation.That is to say,, preferably must regulate the pressure of the source gas in the source air supplying device exactly in CVD, suitably controlling evaporation pressure.The pressure of source gas is adjusted in the manufacturing process of semi-conductor or indicating meter, and is accurate and to regulate under the situation of evaporation rate and doping content etc. consistently be particularly important at needs.
Fig. 1 is the accompanying drawing of the formation of the source air supplying device 10 before the expression.Source air supplying device 10 in the past is made of source storage of substances portion 11, well heater 13, delivering gas supply unit 14 and a plurality of valve V1～V5 of reservoir source material 12.In general, the source material is owing to exist with solid state at normal temperatures, if thereby the source material is not heated to more than the normal temperature, then the source material can not gasify.At this moment, well heater 13 plays a part the heating source material.Usually, source gas is because proportion is bigger, so movability is little, so need utilize delivering gas that source gas is successfully moved in the deposited chamber.In addition, difference that can be according to circumstances opens and closes a plurality of valves and regulates the flow of source gas and delivering gas.For example, under the situation of not using delivering gas, shut-off valve V1, V3.In addition, according to the switching of valve V1 whether, delivering gas is sometimes by source storage of substances portion 11, sometimes also by source storage of substances portion 11.
There is following problem in former source air supplying device like this.
The first and since along with source storage of substances portion 11 the difference of amount of residual source material 12, the steam output of source material 12 changes, so only according to the switching of valve V2, can not regulate the pressure of source gas exactly.
The second, along with making carrying out repeatedly of source material 12 volatilization and sedimentary process by heating, the long-pending variation continuously of the evaporation surface of source material 12, the steam output of source material 12 changes, so only according to the switching of valve V2, can not regulate the pressure of source gas exactly.Especially, be under pulverous situation at source material 12, because the surface condition of source material 12 continues variation, thereby the steam output of source material 12 changes, thereby generation can not be controlled to be steam output the constant problem.
Summary of the invention
Just be for solving the purpose of the present invention that above-mentioned prior art problems finishes: a kind of source air supplying device is provided, and it can control the amount that flows into the source gas in the deposited chamber exactly when the film vapor deposition that adopts chemical Vapor deposition process to carry out.
For realizing above-mentioned purpose, the present invention relates to a kind of source air supplying device, it will be supplied with in deposited chamber by employed source gas when the film vapor deposition that adopts chemical Vapor deposition process to carry out, it is characterized in that: comprise that the heating source material is to generate the material evaporation part, source of source gas, and before described source gas flows into deposited chamber standby treat unit room, and be able to sedimentary deposition plate at the indoor described source gas that is provided with of described standby, be deposited on that source gas on the above-mentioned deposition plate is heated and before gasifying, discharge above-mentioned standby indoor be not adsorbed in source gas on the above-mentioned deposition plate.
At this, the described unit room for the treatment of preferably further comprises cooling end that cools off described deposition plate and the heating part of heating described deposition plate.
In addition, the described unit room for the treatment of preferably further comprises the optical sensor of measuring the surface variation of described deposition plate by deposition source gas on described deposition plate.
The invention still further relates to the source air supplying device of another embodiment, it will be supplied with in deposited chamber by employed source gas when the film vapor deposition that adopts chemical Vapor deposition process to carry out, it is characterized in that, comprise: the heating source material is to generate the material evaporation part, source of source gas, make described source gas sedimentary Room the 1st on deposition plate, and make the source gas isolating Room the 2nd from the described deposition plate that is deposited in described Room the 1st on the described deposition plate, be deposited on that source gas on the above-mentioned deposition plate is heated and before gasifying, discharge above-mentioned standby indoor be not adsorbed in source gas on the above-mentioned deposition plate.
At this, described Room the 1st preferably further comprises the cooling end that cools off described deposition plate, and described Room the 2nd preferably further comprises the heating part of heating described deposition plate.
In addition, between described Room the 1st and described Room the 2nd, preferably be provided with the transfer mechanism of transferring described deposition plate.
Moreover described Room the 1st preferably further comprises the optical sensor of measuring the surface variation of described deposition plate by deposition source gas on described deposition plate.
In addition, also preferably control the amount of the source gas of supplying with to described deposited chamber according to the area of described deposition plate.
According to the present invention who constitutes as described above, the source material of evaporation was deposited on the deposition plate before flowing into deposited chamber, heating deposition is supplied with to deposited chamber at the source of deposition plate material then, thus have quantitative source gas can be supplied to deposited chamber, can be accurately and control the effect of evaporation pressure equably.
Description of drawings
Fig. 1 is the accompanying drawing of the formation of the source air supplying device before the expression.
Fig. 2 is the accompanying drawing of formation of the source air supplying device of expression the present invention the 1st embodiment.
Fig. 3 is the accompanying drawing of formation of the source air supplying device of expression the present invention the 2nd embodiment.
Nomenclature:
100, material evaporation part, 100A source air supplying device 110 source
120 source materials, 130 well heaters
140 delivering gas supply units 150 are treated unit room
150a the 1st Room 150b Room the 2nd
160 deposition plates, 170 cooling ends
182 of 180 transfer mechanisms
190 heating parts
Embodiment
With reference to the accompanying drawings, describe the formation of source air supplying device of the present invention in detail.
Fig. 2 is the accompanying drawing of formation of the source air supplying device 100 of expression the present invention the 1st embodiment.As shown in the figure, source air supplying device 100 by heating source material 120 with the material evaporation part, source 110, well heater 130, the delivering gas storage portion 140 that generate source gas, treat that unit room 150 and a plurality of valve V1～V6 constitute.At this, the basic role of material evaporation part, source 110, well heater 130, delivering gas storage portion 140 and a plurality of valve V1～V6 is the same with source air supplying device 10 before aforementioned, thereby relevant its detailed explanation is omitted at this.
In the source air supplying device 100 of the present invention's the 1st embodiment, adopt following feature to constitute in order in deposited chamber, to supply with quantitative source gas: will treat that unit room 150 is built up between material evaporation part 110, source and the deposited chamber.
With reference to Fig. 2, be provided with in the inside for the treatment of unit room 150 and form the deposition plate 160 that has the tabular of certain area and be used for deposition source gas 125.In addition, in the inside for the treatment of unit room 150, be provided with and be used for heating deposition plate 160 to be separated in the heating part 170 of sedimentary source gas 125 on the deposition plate 160.As shown in the figure, heating part 170 is built up in the inside of deposition plate 160, but also need not be confined to this formation, also can be built up in the outside of deposition plate 160.In addition, for promote flowing into the deposition of the source gas 125 for the treatment of unit room 150, can set up temperature with deposition plate 160 to be cooled to cooling end (not shown) below the normal temperature in the inside for the treatment of unit room 150.
Treat unit room 150 owing to play a part to control exactly the amount of the source gas of supplying with to deposited chamber, promptly by treating that unit room 150 supplies with quantitative source gas to deposited chamber exactly, can control evaporation pressure exactly thus, thereby the characteristic of the film of in batch, making to spread all over whole base plate be uniform, even the while batch variation, the characteristic of the film between batch also is uniform.
At this, quantitative source gas is supplied with to deposited chamber from treating unit room 150 according to following principle.
At first, on deposition plate 160, be deposited on material evaporation part, source 110 and gasify, also flow into the source gas for the treatment of in the unit room 150 125.That is to say, with the source gas of specified pressure fill treat unit room 150 after, through specific time the time, treat that the part in the source gas in the unit room 150 just is deposited on the deposition plate 160.At this, so-called " deposition " is meant that source gas 125 accumulates on the deposition plate 160.In the present invention, for example by absorption (adsorption), the processes such as (condensation) of condensing, source gas 125 can be deposited on the deposition plate 160.Therefore, can know the amount (or volume) of sedimentary source gas 125 on deposition plate 160,, just can supply with quantitative source gas to deposited chamber if just will on deposition plate 160, supply with to deposited chamber by sedimentary source gas 125.Certainly, must remove not on deposition plate 160 process of sedimentary source gas and make source gas 125 earlier from deposition plate 160 separating process for this reason.
Method as the amount (or volume) that can control sedimentary source gas 125 on deposition plate 160 can adopt following variety of way.
The first, be the mode of calculating the amount of the source gas that on deposition plate, adsorbs, in more detail, be the mode that goes for the situation of absorption source gas on deposition plate.That is to say, adsorb fully under the situation of one deck in the whole surface of deposition plate at source gas, deposition plate has certain area, and the physical property of known source gas (for example, the volume of every atom or the quality of every atom etc.), thereby can easily control the volume of the source gas that on deposition plate, adsorbs.This mode has been utilized the mechanism in the absorption that produces as the solid deposition plate with as the source inter gas of gas, promptly can not append the phenomenon of absorption after source gas adsorbs one deck fully in the whole surface of deposition plate.Therefore, the volume of the source gas that adsorbs on deposition plate and the area of deposition plate and deposition (i.e. absorption) time is directly proportional, through behind the certain hour, and the adsorptive capacity of the source gas state that just reaches capacity, even depositing time prolongs after this, the adsorptive capacity of source gas can not change yet.
The material of deposition plate can change according to the kind of employed source gas, be to reduce depositing time, and the absorption of preferably selecting source gas as much as possible is the deposition plate of material preferably.
With under the situation of deposition system, in one batch, under the more situation of the amount of the source gas that deposited chamber is supplied with, for example, can in treating unit room 150, set up a plurality of deposition plates 160 at large-area substrates for the situation of large-area substrates with deposition system.In addition, setting up under the situation of a plurality of deposition plates, increasing to more than the necessary amount for preventing the volume for the treatment of unit room, preferred a plurality of deposition plates are provided with stepped construction mutually.In addition, set up respectively for a plurality of deposition plates to be used to make sedimentary source gas isolating a plurality of heating parts from the deposition plate, so a plurality of heating parts are preferably controlled independently of each other.This be because: if just heat a part of deposition plate in a plurality of deposition plates, then since just on the deposition plate of heating sedimentary source gas can supply with to deposited chamber, thereby can control evaporation pressure more subtly.
The second, be the mode of variation of the optical property of measurement source gas aggradation and the settled layer that forms, in more detail, be to go for continuing to condense or the mode of situation more than evaporation one deck at source gas on the deposition plate.That is to say that along with source gas continues deposition on deposition plate, the thickness of settled layer changes, the variation of such deposit thickness can be controlled by the variation of optical property (being the transmitance of settled layer) of measurement settled layer.
Because the measurement of the optical property of such settled layer, the present invention can treat that unit room sets up light source and optical sensor (not shown).Light source and optical sensor can be built up in treats the inside and outside of unit room, but for operational convenience, preferably is built up in the outside for the treatment of unit room.Light source and optical sensor are being built under the situation of the outside for the treatment of unit room, the light (for example laser) of the regulation of sending from light source is radiated at the indoor deposition plate of standby, can treat that unit room sets up the guiding window, so that make the light transmission settled layer that is radiated at deposition plate and deposition plate and arrive optical sensor.
The 3rd, be the mode that measurement source gas is able to the quality change of sedimentary deposition plate, in more detail, be to go for continuing to condense or the mode of situation more than evaporation one deck at source gas on the deposition plate.That is to say that because source gas continues deposition on deposition plate, the quality of deposition plate changes, and by measuring the quality change of such deposition plate, just can control the amount of sedimentary source gas on deposition plate.
Because the mass measurement of such deposition plate, the present invention can be at the indoor mass sensor (not shown) of setting up of standby.
Below with reference to Fig. 2, be described in detail with regard to the action of source air supplying device 100.
At first, make well heater 130 actions of the material evaporation part, source 110 of storing active material 120 for supply source gas.Before the temperature of material evaporation part, source 110 arrives the vaporization temperature of source material 120, keeping whole valve V1～V6 and be in closing state.
After this, under the working on of well heater 130,, make delivering gas flow into material evaporation part, source 110 with regard to opening valve V1 in case the temperature of material evaporation part, source 110 arrives the vaporization temperature of source material 120.At this moment, according to the switching of valve V1 whether, delivering gas is sometimes by material evaporation part, source 110, sometimes also by material evaporation part, source 110, but considers the movability of common source gas, preferably makes delivering gas pass through material evaporation part, source 110.On the other hand, under the sufficient situation of the movability of source gas, also can not use delivering gas, under these circumstances, also can not set up delivering gas supply unit 140.
Make delivering gas flow into material evaporation part, source 110 by opening of valve V1, then open valve V2 and valve V4, then the source gas of 110 gasifications flows into delivering gas and treats unit room 150 in material evaporation part, source.At this moment, open with the pass with utilization and the situation of Controlling Source gas flow is compared, the opening degree of preferably regulating pipe arrangement imperceptibly comes the Controlling Source gas flow.
Inflow treats that the source gas adsorption of unit room 150 is being built on the deposition plate 160 for the treatment of unit room 140.At this moment, the temperature of keeping deposition plate 160 if make cooling end (not shown) start of the bottom that is built up in deposition plate 160 is lower than normal temperature, and then according to the difference of source gaseous species, rate of adsorption increases, and can adsorb source gas at short notice.For on the deposition plate 160 of certain area, fully adsorbing source gas, need the adsorption time of regulation, thereby make valve V5 and valve V6 keep closing condition in during adsorption time.
After this, shut-off valve V1, V2, V4, and open valve V6 discharge and are not adsorbed in treating unit room 150 on the deposition plate 160 and source gas and the delivering gas that left behind.
Secondly, shut-off valve V6 makes heating part 170 starts of the bottom that is built in deposition plate 160, thereby the source gas 125 that is adsorbed on the deposition plate 160 is separated.
If whole source gas separates from deposition plate 160, then open valve V3, V4 and make the delivering gas inflow treat unit room 150, open valve V5 simultaneously and make quantitative source gas flow into deposited chamber, to finish needed evaporation operation.
Fig. 3 is the accompanying drawing of formation of the source air supplying device 100A of expression the present invention the 2nd embodiment.For with the same integrant of aforesaid the 1st embodiment, use same Reference numeral, and omitted relevant its detailed description.
As shown in the figure, source air supplying device 100A is made of with material evaporation part, source 110, well heater 130, the 140, the 1st Room 150a of delivering gas storage portion and the 2nd Room 150b and a plurality of valve V1～V6 that generates source gas heating source material 120.The basic role of these material evaporation parts, source 110, well heater 130, delivering gas storage portion 140 and a plurality of valve V1～V6 is owing to the same with aforesaid the 1st embodiment, about its detailed explanation is omitted at this.
The feature of the source air supplying device 100A of the present invention's the 2nd embodiment constitutes, between material evaporation part 110, source and deposited chamber, set up and make the source gas aggradation at the 1st Room 150a on the deposition plate 160 and make at the sedimentary source of the 1st Room 150a gas isolating the 2nd Room 150b from the deposition plate 160, so that can in deposited chamber, supply with quantitative source gas.
With reference to Fig. 3,, be provided with deposition source gas 125 and have the tabular deposition plate 160 of certain area in separable mode in the inside of the 1st Room 150a that back segment disposed of material evaporation part, source 110.In addition, be provided with the cooling end 170 of cooling deposition plate 160 in the bottom of deposition plate 160, so that source gas 152 can easily be deposited on the deposition plate 160.
The type of cooling of cooling end 170 is not special to be limited, but preferred usually the use flow through in accordance with regulations temperature refrigerative water coolant in the mode of cooling deposition plate 160.At this moment, the temperature of water coolant decides according to the kind of the source gas that uses.For example, the metal-organic coagulation temperature of using as source gas as the situation below the normal temperature under, if with the temperature maintenance of water coolant below 20 ℃, then can deposition source gas on deposition plate 160.
Like this, 110 gasifications and the source gas 125 that flows in the 1st Room 150a is deposited on the deposition plate 160 that is built in the 1st Room 150a in material evaporation part, source.At this, the meaning of " deposition ", process and the method for amount (or volume) that can control sedimentary source gas 125 be because the same with above-mentioned the 1st embodiment, so omitted relevant its detailed description in the present embodiment.
At the 1st Room 150a source gas 125 is deposited on the deposition plate 160, deposition plate 160 is transplanted on the 2nd Room 150b by transfer mechanism 180 then.
With reference to Fig. 3, in the backend configuration of the 1st Room 150a the 2nd Room 150b is arranged, be provided with the deposition plate 160 that comes is transferred in placement from the 1st Room 150a heating part 190 in the inside of the 2nd Room 150b.
Thereby heating part 190 plays heating deposition plate 160 and makes the isolating effect from the deposition plate 160 of the source gas 125 that is deposited on the deposition plate 160.As shown in Figure 3, heating part 190 is built up in the inside of the 2nd Room 150b, but may not be confined to this, also can be built up in the outside of the 2nd Room 150b.
Respectively on the 1st and the 2nd Room 150a, 150b, door 182 is set up in the handover that is preferably the deposition plate 160 by transfer mechanism 180.
Separate and the total amount of source gas that is present in the inside of the 2nd Room 150b is supplied with to the deposited chamber of the back segment that is configured in the 2nd Room 150b from deposition plate 160.Consequently, owing to only supply with quantitative source gas to deposited chamber, thereby can control evaporation pressure exactly, so the characteristic of the film of making in a batch, doping content etc. are owing to the whole area that spreads all over substrate becomes evenly, such homogeneity also can similarly be kept between different batches.
Below, explain the action of source air supplying device 100A with reference to Fig. 3.
At first, make well heater 130 work into the material evaporation part, source 110 of supply source gas reservoir source material 120.Before the temperature of material evaporation part, source 110 reached the vaporization temperature of source material 120, whole valve V1～V6 kept closing state.
After this, when well heater 130 works on and when making the temperature of material evaporation part, source 110 arrive the vaporization temperature of source material 120, open valve V1 and make delivering gas flow into material evaporation part, source 110.At this moment, according to the switching of valve V1 whether, delivering gas is sometimes by material evaporation part, source 110, sometimes also by material evaporation part, source 110, but considers the movability of common source gas, preferably makes delivering gas pass through material evaporation part, source 110.On the other hand, under the sufficient situation of the movability of source gas, also can not use delivering gas, under these circumstances, also can not set up delivering gas supply unit 140.
Make delivering gas flow into material evaporation part, source 110 by opening of valve V1, then open valve V2 and valve V4, then the source gas of 110 gasifications flows into the 1st Room 150a with delivering gas in material evaporation part, source.At this moment, open with the pass with utilization and the situation of Controlling Source gas flow is compared, the opening degree of preferably regulating pipe arrangement imperceptibly comes the Controlling Source gas flow.
Be provided with cooling end 170 in the inside of the 1st Room 150a, be provided with deposition plate 160 in separable mode at cooling end 170.The cooling end 170 that deposition plate 160 is worked by means of utilizing water coolant is kept 20 ℃ temperature, so the source gas adsorption that flows into the 1st Room 150a is on the deposition plate 160 that is built in the 1st Room 150a.For on the deposition plate 160 of certain area, fully adsorbing source gas, the adsorption time that needs regulation, in during adsorption time, make the door 182 of separating the 1st and the 2nd Room 150a, 150b keep closing condition, thereby source gas and delivering gas can not be discharged to the outside of the 1st Room 150a.
After the source gas adsorption is on deposition plate 160, utilize the transfer mechanism of conveyor belt or mechanical manipulator and so on, deposition plate 160 is transplanted on the 2nd Room 150b.Preferably in the way of transferring deposition plate 160, also keep 20 ℃ temperature, thereby the source gas of absorption can not separated in transferring the way.
After this, shut-off valve V1, V2, V4 open valve V6, discharge source gas and delivering gas residual in the 2nd Room 150b.
Then shut-off valve V6 and door 182 make heating part 190 work that are built in the 2nd Room 150b, thereby the source gas 125 that is adsorbed on the deposition plate 160 is separated.
If source gas 125 separates from deposition plate 160 fully, then open valve V3, V4 and door, make delivering gas flow into the 2nd Room 150b, open valve V5 simultaneously and make quantitative source gas flow into deposited chamber, thereby finish needed evaporation operation.
According to the present invention, the source material of evaporation was deposited on the deposition plate it before flowing into deposited chamber, the source material of heating deposition on deposition plate to be supplying with to deposited chamber then, thus have can with quantitative source gas to deposited chamber supply with, can be accurately and control the effect of evaporation pressure equably.Therefore, we can say that industry applications of the present invention is high.
On the other hand, in this specification sheets, the present invention preferred embodiment has been described by several, but for a person skilled in the art it is clear that in not departing from disclosed category of the present invention of appending claims and thought, can carry out many variations and correction.
Claims (8)
1. source air supplying device, it will be supplied with in deposited chamber by employed source gas when the film vapor deposition that adopts chemical Vapor deposition process to carry out, and it is characterized in that, comprise:
The heating source material to be generating the material evaporation part, source of source gas, and
Standby treats unit room before described source gas flows into deposited chamber;
And be able to sedimentary deposition plate at the indoor described source gas that is provided with of described standby,
Be deposited on that source gas on the above-mentioned deposition plate is heated and before gasifying, discharge above-mentioned standby indoor be not adsorbed in source gas on the above-mentioned deposition plate.
2. source air supplying device according to claim 1 is characterized in that: the described unit room for the treatment of further comprises cooling end that cools off described deposition plate and the heating part of heating described deposition plate.
3. source air supplying device according to claim 1 is characterized in that: the described unit room for the treatment of further comprises the optical sensor of measuring the surface variation of described deposition plate by deposition source gas on described deposition plate.
4. source air supplying device, it will be supplied with in deposited chamber by employed source gas when the film vapor deposition that adopts chemical Vapor deposition process to carry out, and it is characterized in that, comprise:
The heating source material to be generating the material evaporation part, source of source gas,
Make described source gas sedimentary Room the 1st on deposition plate, and
Make the source gas isolating Room the 2nd from the described deposition plate that is deposited in described Room the 1st on the described deposition plate,
Be deposited on that source gas on the above-mentioned deposition plate is heated and before gasifying, discharge above-mentioned standby indoor be not adsorbed in source gas on the above-mentioned deposition plate.
5. source air supplying device according to claim 4 is characterized in that: described Room the 1st further comprises the cooling end that cools off described deposition plate, and described Room the 2nd further comprises the heating part of heating described deposition plate.
6. source air supplying device according to claim 4 is characterized in that: be provided with the transfer mechanism of transferring described deposition plate between described Room the 1st and described Room the 2nd.
7. source air supplying device according to claim 4 is characterized in that: described Room the 1st further comprises the optical sensor of measuring the surface variation of described deposition plate by deposition source gas on described deposition plate.
8. according to claim 1 or 4 described source air supplying devices, it is characterized in that: the amount of controlling the source gas of supplying with to described deposited chamber according to the area of described deposition plate.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2007-0089330 | 2007-09-04 | ||
| KR1020070089330A KR101028044B1 (en) | 2007-09-04 | 2007-09-04 | Apparatus For Supplying Source Gas |
| KR1020070089330 | 2007-09-04 | ||
| KR10-2007-0133725 | 2007-12-18 | ||
| KR1020070133725A KR100960863B1 (en) | 2007-12-18 | 2007-12-18 | Apparatus and Method For Supplying Source Gas |
| KR1020070133725 | 2007-12-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101381863A CN101381863A (en) | 2009-03-11 |
| CN101381863B true CN101381863B (en) | 2011-11-16 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008102127637A Expired - Fee Related CN101381863B (en) | 2007-09-04 | 2008-09-04 | Source gas supply device |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR101028044B1 (en) |
| CN (1) | CN101381863B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109536894B (en) * | 2017-09-22 | 2020-08-11 | 清华大学 | Preparation device of organic light emitting diode |
| TWI821363B (en) * | 2018-08-31 | 2023-11-11 | 美商應用材料股份有限公司 | Precursor delivery system |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5966499A (en) * | 1997-07-28 | 1999-10-12 | Mks Instruments, Inc. | System for delivering a substantially constant vapor flow to a chemical process reactor |
| US6409839B1 (en) * | 1997-06-02 | 2002-06-25 | Msp Corporation | Method and apparatus for vapor generation and film deposition |
| CN1450610A (en) * | 2002-04-01 | 2003-10-22 | 高级网络服务公司 | Method of depositing vapor phase organic matter and apparatus of depositing vapor phose organic matter using same |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003147529A (en) * | 2001-11-12 | 2003-05-21 | Tohoku Ricoh Co Ltd | Method of manufacturing thin metal oxide film and apparatus for manufacturing the same |
| US20060060139A1 (en) * | 2004-04-12 | 2006-03-23 | Mks Instruments, Inc. | Precursor gas delivery with carrier gas mixing |
| JP2006299335A (en) * | 2005-04-19 | 2006-11-02 | Fujimori Gijutsu Kenkyusho:Kk | Film deposition method, film deposition apparatus used for the same, and vaporization device |
| EP2006414A2 (en) * | 2006-03-30 | 2008-12-24 | Mitsui Engineering & Shipbuilding Co., Ltd. | Atomic layer growing apparatus |
-
2007
- 2007-09-04 KR KR1020070089330A patent/KR101028044B1/en not_active IP Right Cessation
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2008
- 2008-09-04 CN CN2008102127637A patent/CN101381863B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6409839B1 (en) * | 1997-06-02 | 2002-06-25 | Msp Corporation | Method and apparatus for vapor generation and film deposition |
| US5966499A (en) * | 1997-07-28 | 1999-10-12 | Mks Instruments, Inc. | System for delivering a substantially constant vapor flow to a chemical process reactor |
| CN1450610A (en) * | 2002-04-01 | 2003-10-22 | 高级网络服务公司 | Method of depositing vapor phase organic matter and apparatus of depositing vapor phose organic matter using same |
Non-Patent Citations (1)
| Title |
|---|
| JP特开平6-283451A 1994.10.07 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101028044B1 (en) | 2011-04-08 |
| KR20090024356A (en) | 2009-03-09 |
| CN101381863A (en) | 2009-03-11 |
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