CN101235487B - Material gas supply device - Google Patents
Material gas supply device Download PDFInfo
- Publication number
- CN101235487B CN101235487B CN2008100086238A CN200810008623A CN101235487B CN 101235487 B CN101235487 B CN 101235487B CN 2008100086238 A CN2008100086238 A CN 2008100086238A CN 200810008623 A CN200810008623 A CN 200810008623A CN 101235487 B CN101235487 B CN 101235487B
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- Prior art keywords
- pressure
- sensor unit
- gas supply
- supply device
- unstripped gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention provides a feed gas feeding device. The feed gas feeding device gasifies raw material as raw to provide when using a chemical vapor plating method to vapor plating films. The feed gas feeding device of the invention can effectively adjust vapor plating pressure in a vapor plating chamber when the films are in vapor plating via real-time and exactly controlling pressure of the raw material flowing into the vapor plating chamber.
Description
Technical field
Can regulate the material gas supply device of the flow of solid material when the present invention relates to chemical vapor deposition method evaporated film.Relate in particular to the time, can regulate the material gas supply device of the evaporation pressure in the deposited chamber effectively by the pressure of the unstripped gas in the deposited chamber of control inflow accurately and real-time with chemical vapor deposition method evaporated film.
Background technology
With chemical vapor deposition method (Chemical Vapor Deposition; CVD) technology of evaporated film is extremely important in various application such as the luminescent layer of the transparency electrode of the insulation layer of semiconductor element and active layer, liquid crystal display device, electron luminescence display element and protective layer.In general, the physicals of the film that becomes with the CVD evaporation is subjected to the influence of CVD process conditions such as evaporation pressure, evaporation temperature and evaporation time very sensitively.For example, the variation of evaporation pressure might make composition, density, bonding force and the evaporation rate etc. of the film of evaporation change.
Under the situation of CVD, the influence of the flow (being feedstock gas pressures) of the unstripped gas that evaporation pressure directly is subjected to material gas supply device and is provided, this material gas supply device provides the raw material of the film substrate of wanting evaporation.That is, in order suitably to control evaporation pressure, the most important thing is to regulate exactly the feedstock gas pressures in the material gas supply device among the CVD.Evaporation rate is adjusted under certain situation accurately at needs, the adjusting of feedstock gas pressures is even more important.
Fig. 1 is the figure of the structure of the material gas supply device 10 of expression prior art.The material gas supply device 10 of prior art comprises raw material storage unit 11, well heater 13, carrier gases feed unit 14 and a plurality of valve V1～V5 that stores raw material 12.Because raw material exists with solid state at normal temperatures generally speaking,, raw material must be heated to more than the normal temperature therefore for raw material is become unstripped gas.At this moment, well heater 13 plays the effect of heating raw material.Usually, therefore mobile little because the proportion of unstripped gas is bigger, so utilize carrier gases that unstripped gas is successfully moved in the deposited chamber.A plurality of valves open or close according to the difference of situation, regulate the flow of unstripped gas or carrier gases.For example, under the situation of not using carrier gases, valve V1, V3 close.And, whether open carrier gases or flow through raw material storage unit 11 or do not flow through according to valve V1.
There is following problem in the material gas supply device of this prior art.The first, because according to the difference that remains in the amount of the raw material 12 in the raw material storage unit 11, the steam output of raw material 12 changes, therefore only can not regulate the pressure of unstripped gas exactly by opening or closing valve V2.The second, owing to carry out volatilizing or condensing process because of the heating of raw material 12 repeatedly, raw material 12 evaporable surface-area are becoming always.Therefore the steam output of raw material 12 is also becoming, so only can not regulate the pressure of unstripped gas exactly by opening or closing valve V2.Especially be under pulverous situation at raw material 12, the problem that the surface condition of raw material 12 changes always can take place.
Summary of the invention
Therefore, the present invention is in order to solve prior art problems as described above, and purpose is that a kind of material gas supply device will be provided, and during with chemical vapor deposition method evaporated film, can control the pressure that flows into the unstripped gas in the deposited chamber accurately and real-time.
In order to achieve the above object, material gas supply device of the present invention is the material gas supply device that uses during with chemical vapor deposition method evaporated film, it is characterized in that, comprising: raw materials evaporate unit, heating raw material make it generate unstripped gas; Sensor unit is measured the pressure in the above-mentioned raw materials evaporation element; And control unit is regulated the pressure that flows into the unstripped gas in the deposited chamber according to the pressure measurements of the sensor unit.
The above-mentioned control unit of above-mentioned raw materials gas supply device comprises the valve with the sensor unit interlock, can regulate the pressure that flows into the unstripped gas in the above-mentioned deposited chamber by the aperture of above-mentioned valve.
And, in order to achieve the above object, the material gas supply device of other forms of the present invention is the material gas supply devices that use during with chemical vapor deposition method evaporated film, it is characterized in that, comprise: raw materials evaporate unit, heating raw material make it generate unstripped gas; The 1st sensor unit is measured the pressure in the above-mentioned raw materials evaporation element; Waiting room, above-mentioned raw materials gas before flowing into deposited chamber in this wait; And control unit is regulated the pressure that flows into the unstripped gas in the above-mentioned waiting room according to the pressure measurements of the sensor unit.
The above-mentioned raw materials gas supply device preferably also comprises the 2nd sensor unit of measuring the pressure in the above-mentioned waiting room.
The above-mentioned control unit of above-mentioned raw materials gas supply device preferably includes the valve with the sensor unit interlock, regulates the pressure that flows into the unstripped gas in the above-mentioned waiting room by the aperture of above-mentioned valve.
And, in order to achieve the above object, the material gas supply device of other forms of the present invention is the material gas supply devices that use during with chemical vapor deposition method evaporated film, it is characterized in that, comprise: raw materials evaporate unit, heating raw material make it generate unstripped gas; Waiting room, above-mentioned raw materials gas before flowing into deposited chamber in this wait; Sensor unit is measured the pressure in the above-mentioned waiting room.
The above-mentioned raw materials gas supply device preferably also comprises the valve of regulating the pressure that flows into the unstripped gas in the above-mentioned waiting room according to the pressure measurements of the sensor unit.
The above-mentioned raw materials gas supply device preferably also comprises provides the carrier gases feed unit that above-mentioned raw materials gas is carried to the carrier gases in the deposited chamber.
The sensor unit of above-mentioned raw materials gas supply device preferably also comprises and is used to prevent the mechanism of above-mentioned raw materials gas evaporation to the sensor unit.
Material gas supply device of the present invention, because the time with chemical vapor deposition method evaporated film, no matter the state of the raw material in the raw material storage unit how, can both control the pressure that flows into the unstripped gas in the deposited chamber in real time, exactly, therefore in the evaporate process of reality, the evaporation pressure in the deposited chamber can be adjusted to steady state value.
Description of drawings
Fig. 1 is the figure of structure of the material gas supply device of expression prior art.
Fig. 2 is the figure of structure of the material gas supply device of expression the 1st embodiment of the present invention.
Fig. 3 is the figure of structure of the material gas supply device of expression the 2nd embodiment of the present invention.
Fig. 4 is the figure of structure of the material gas supply device of expression the 3rd embodiment of the present invention.
Description of symbols
20,30,40 material gas supply devices
21,31,41 unstripped gas storage unit
22,32,42 raw materials
23,33,43 well heaters
24,34,44 carrier gases feed units
25,35,38,46 sensor units
26,36 control units
37,45 waiting rooms
V1, V2, V3, V4, V5 valve
Embodiment
Describe structure of the present invention with reference to the accompanying drawings in detail.
Fig. 2 is the figure of the structure of the material gas supply device 20 of expression the 1st embodiment of the present invention.Material gas supply device 20 is made of raw material storage unit 21, well heater 23, carrier gases feed unit 24, sensor unit 25, control unit 26 and a plurality of valve V1～V5 of storage raw material 22.
At this, the effect of raw material storage unit 21, well heater 23, carrier gases storage unit 24 and valve V1～V5 is identical with the material gas supply device 10 of above-mentioned prior art.Owing under mobile enough situations of unstripped gas, do not need carrier gases, therefore can not want carrier gases feed unit 24 yet.When using carrier gases, whether open carrier gases or flow through raw material storage unit 21 or do not flow through according to valve V1.But when considering general unstripped gas mobile, preferred carrier gases flows through raw material storage unit 21.
The feature structure of the material gas supply device 20 of the 1st embodiment of the present invention is sensor unit 25 and control unit 26.Sensor unit 25 is measured the pressure of unstripped gas in the raw material storage unit 21.Owing to make the unstripped gas continuous evaporating-plating not so good to the sensor unit 25 on the principle of measuring stress, therefore preferably include and be used to prevent the mechanism (not shown) of unstripped gas evaporation to the sensor unit 25.For example, it is contemplated that the front end at sensor unit 25 is provided with valve, the method for shut-off valve when not using sensor unit 25; Front end at sensor unit 25 is provided with decontamination line (purge line), when not using sensor unit 25, makes the method for decontamination line purification (purge) etc. before unstripped gas arrives sensor unit 25.Control unit 26 is regulated the pressure that flows into the unstripped gas in the deposited chamber according to the measuring result of pressure in the sensor unit 25.Control unit 26 comprises the valve (not shown) with sensor unit 25 interlocks, regulates the pressure that flows into the unstripped gas in the deposited chamber by this valve.After the pressure that sensor unit 25 is measured and predefined pressure compare, be arranged at the aperture of the valve in the control unit 26 according to its difference control, regulate the pressure of unstripped gas.Thus, even because of the state difference of raw material 22 makes the change of feedstock gas pressures in the raw material storage unit 21 very big, also the pressure that finally flows into the unstripped gas in the deposited chamber can be maintained steady state value.
The action of material gas supply device 20 of the present embodiment of said structure then, is described.When well heater 23 being heated to the temperature of regulation in order to supply raw materials gas, closeall valve or only make valve V4 be in open mode in nonvolatile temperature range.After arriving more than the volatilization temperature, before reaching the temperature of carrying out the evaporation operation, open valve V1, V2, V4, a spot of carrier gases is provided.In the evaporation operation of reality, open valve V1, V2, V5 carries out the evaporation operation.When the predefined pressure of the pressure ratio of the unstripped gas that measures by sensor unit 25 was high, control unit 26 was opened the valve in the control unit 26 automatically, closed when lower than setting pressure.At this moment, be not to open or close raw material gas flow fully and control, but the electricity of fine setting pipeline is led (conductance).When carrier gases did not flow through raw material storage unit 21, valve V1 maintained closing condition always.When using carrier gases,,, also can open valve V3 in order to improve the flowability of unstripped gas even flow through in carrier gases under the situation of raw material storage unit 21.And carrier gases also can be used as the purification (purge) of deposited chamber and uses with gas, in this case, can open valve V3, V5.
Fig. 3 is the figure of the structure of the material gas supply device 30 of expression the 2nd embodiment of the present invention.Material gas supply device 30 comprises raw material storage unit 31, well heater 33, carrier gases feed unit 34, sensor unit 35,38, control unit 36, waiting room 37 and a plurality of valve V1～V5 that stores raw material 32.Because the effect of raw material storage unit 31, well heater 33, carrier gases storage unit 34 and valve V1～V5 is identical with above-mentioned raw materials gas supply device 20, therefore omit explanation to its detailed content.
The feature structure of the material gas supply device 30 of the 2nd embodiment of the present invention is sensor unit 35, control unit 36 and waiting room 37.The same with the 1st embodiment, the sensor unit 35 of present embodiment also can comprise the device (not shown) that is used to prevent the unstripped gas evaporation.Control unit 36 is regulated the pressure that flows into the unstripped gas in the deposited chamber according to the measuring result of pressure in the sensor unit 35.Control unit 36 comprises the valve (not shown) with sensor unit 35 interlocks, flows into the pressure of the unstripped gas in the waiting room 37 by this valve regulation.After the pressure that sensor unit 35 is measured and predefined pressure compare, be arranged at the aperture of the valve in the control unit 36 according to its difference control, regulate the pressure of unstripped gas.Waiting room 37 is the chambers of waiting for before unstripped gas flows in the deposited chamber, and its effect is to regulate evaporation pressure exactly.That is,, the unstripped gas that equates with this loading level is flowed in the deposited chamber carry out the evaporation operation, then can control the influx of unstripped gas more accurately if after the unstripped gas of specified pressure is filled in the waiting room 37.Picture atomic shell vapour deposition method (AtomicLayer Deposition; Need fine regulate under the situation of evaporation amount when ALD) carrying out evaporated film in atomic shell unit or below it like this, present embodiment is especially effective.
The action of material gas supply device 30 of the present embodiment of said structure then, is described.The elemental motion of the material gas supply device 30 of present embodiment is identical with the action of above-mentioned raw materials gas supply device 20.But, flow through the unstripped gas that maintains behind the control unit 36 under the certain pressure and be filled in the waiting room 37 before in flowing into deposited chamber.When the pressure of the unstripped gas in the waiting room 37 reaches prescribed value, the valve in the closing control unit 36.Certainly, shut-off valve V2 can block the raw material gas flow that flows to control unit 36 at all.Flow through the flow of unstripped gas of control unit 36 and the pressure that elapsed time calculates the unstripped gas in the waiting room 37 by measurement.Also can replace such method of calculation, the sensor unit 38 direct pressure of measuring in the waiting room 37 that append are installed in waiting room 37.Valve in the control unit 36 not only links with sensor unit 35 at this moment, preferably also links with sensor unit 38.When the valve of control unit 36 also links with sensor unit 38, can be according to the valve in the measuring result closing control unit 36 of pressure in the sensor unit 38.When the evaporation operation of reality begins, open valve V5 all unstripped gas in the waiting room 37 is flowed in the deposited chamber.According to whether using carrier gases suitably open and close valve V1, V3, identical when effect that it is basic and the 1st embodiment.
Fig. 4 is the figure of the structure of the material gas supply device 40 of expression the 3rd embodiment of the present invention.Material gas supply device 40 comprises raw material storage unit 41, well heater 43, carrier gases feed unit 44, waiting room 45, sensor unit 46 and a plurality of valve V1～V5 that stores raw material 42.The effect of each integrant is identical with above-mentioned embodiment.
The material gas supply device 40 of the 3rd embodiment of the present invention is the variation of the 2nd embodiment.The 3rd embodiment is characterised in that sensor unit 46 is directly measured the pressure in the waiting room 45, is that shut-off valve V2 blocks the unstripped gas that offers waiting room 45 from raw material storage unit 41 when reaching the state of specified pressure when being judged to be.The 3rd embodiment also can be regulated the pressure of waiting room 45 even without control unit 36 such structures of the 2nd embodiment, can control the influx that flows into the unstripped gas in the deposited chamber more accurately.
According to the present invention, because the time with chemical vapor deposition method evaporated film, no matter the state of the raw material in the raw material storage unit how, can both control the pressure that flows into the unstripped gas in the deposited chamber in real time, exactly, therefore in the evaporate process of reality, the evaporation pressure in the deposited chamber can be adjusted to steady state value.Therefore, we can say that industrial utilization rate of the present invention is high.
On the other hand, though narrated the present invention with several preferred implementations in this specification sheets, but so long as those skilled in the art will be appreciated that in not breaking away from disclosed category of the present invention of additional claim scope and thought and can carry out various deformation and modification.
Claims (7)
1. a material gas supply device that uses during with chemical vapor deposition method evaporated film is characterized in that, comprising:
Raw materials evaporate unit, heating raw material make it generate unstripped gas;
The 1st sensor unit is measured the unitary pressure of described raw materials evaporate;
Waiting room, described unstripped gas before flowing into deposited chamber in this wait; And,
Control unit according to the pressure measurements of described the 1st sensor unit, is regulated the pressure that flows into the unstripped gas in the described waiting room.
2. material gas supply device as claimed in claim 1 is characterized in that,
Also comprise the 2nd sensor unit of measuring the pressure in the described waiting room.
3. material gas supply device as claimed in claim 2 is characterized in that,
Described control unit comprise with the described first sensor unit and second sensor unit in the valve of at least one interlock, regulate the pressure that flows into the unstripped gas in the described waiting room by the aperture of described valve.
4. a material gas supply device that uses during with chemical vapor deposition method evaporated film is characterized in that, comprising:
Raw materials evaporate unit, heating raw material make it generate unstripped gas;
Waiting room, described unstripped gas before flowing into deposited chamber in this wait;
Sensor unit is measured the pressure of described waiting room.
5. material gas supply device as claimed in claim 4 is characterized in that,
Also comprise the valve of regulating the pressure that flows into the unstripped gas in the described waiting room according to the pressure measurements of described sensor unit.
6. as claim 1 or 4 described material gas supply devices, it is characterized in that,
Also comprise the carrier gases feed unit that described unstripped gas is carried to the carrier gases in the deposited chamber is provided.
7. as claim 1 or 4 described material gas supply devices, it is characterized in that,
Described sensor unit comprises and is used to prevent the mechanism of described unstripped gas evaporation to the described sensor unit.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020070010394 | 2007-02-01 | ||
| KR1020070010394A KR100851439B1 (en) | 2007-02-01 | 2007-02-01 | Apparatus for supplying source gas |
| KR10-2007-0010394 | 2007-02-01 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101235487A CN101235487A (en) | 2008-08-06 |
| CN101235487B true CN101235487B (en) | 2010-06-30 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008100086238A Expired - Fee Related CN101235487B (en) | 2007-02-01 | 2008-02-01 | Material gas supply device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2008190037A (en) |
| KR (1) | KR100851439B1 (en) |
| CN (1) | CN101235487B (en) |
| TW (1) | TWI394860B (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101064306B1 (en) * | 2008-10-01 | 2011-09-14 | 주식회사 테라세미콘 | Apparatus For Supplying Source Gas |
| TW201022468A (en) * | 2008-10-01 | 2010-06-16 | Tera Semicon Corp | Apparatus for supplying source gas |
| JP5565962B2 (en) | 2009-03-04 | 2014-08-06 | 株式会社堀場エステック | Gas supply device |
| KR101087069B1 (en) * | 2009-03-23 | 2011-11-28 | 주식회사 테라세미콘 | Method For Supplying Source Gas |
| US20110143035A1 (en) * | 2009-12-16 | 2011-06-16 | Byoung Ha Cho | Thin Film Deposition System and Method for Depositing Thin Film |
| KR200460716Y1 (en) * | 2009-12-23 | 2012-05-31 | 주식회사 테라세미콘 | Apparatus For Supplying Source Gas |
| KR200453135Y1 (en) | 2010-08-23 | 2011-04-08 | 주식회사 테라세미콘 | Apparatus for supplying source gas including means for outflow prevention of deposition source meaterial |
| KR101323885B1 (en) * | 2012-05-04 | 2013-10-30 | 한국표준과학연구원 | A precursor vapor pressure measuring device for precursor |
| CN103194729B (en) * | 2013-03-27 | 2015-09-02 | 中国科学院物理研究所 | The preparation method of metal chalcogenide film |
| KR20140147458A (en) * | 2013-06-20 | 2014-12-30 | 에스엔유 프리시젼 주식회사 | Apparatus for vaccum evaporation |
| DE102014109195A1 (en) * | 2014-07-01 | 2016-01-07 | Aixtron Se | Apparatus and method for generating a vapor from multiple liquid or solid sources for a CVD or PVD device |
| KR102239241B1 (en) * | 2018-10-22 | 2021-04-12 | 주식회사 포스코 | Apparatus and method for preventing from nozzle clogging |
| CN112048711A (en) * | 2019-06-06 | 2020-12-08 | 北京北方华创微电子装备有限公司 | Air supply pipeline and vapor deposition equipment |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1718854A (en) * | 2004-07-07 | 2006-01-11 | 中国航空工业第一集团公司北京航空制造工程研究所 | Supplying device of chemical gaseous phase deposition solid state precusor |
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|---|---|---|---|---|
| JPS62273714A (en) * | 1986-05-21 | 1987-11-27 | Clarion Co Ltd | Method and apparatus for supplying organic metal gas |
| JPH0499279A (en) * | 1990-08-08 | 1992-03-31 | Seiko Epson Corp | Method for gasifying and supplying liquid material and device for supplying this material |
| JP2002043282A (en) * | 2000-07-03 | 2002-02-08 | Applied Materials Inc | Device and method for feeding gas |
| JP3947126B2 (en) * | 2002-04-11 | 2007-07-18 | 株式会社日立国際電気 | Semiconductor manufacturing equipment |
| JP2003332246A (en) * | 2002-05-14 | 2003-11-21 | Teijin Seiki Co Ltd | Sensor protective mechanism |
| JP2004015005A (en) * | 2002-06-11 | 2004-01-15 | Murata Mfg Co Ltd | Thin film manufacturing apparatus and method |
| JP3908625B2 (en) * | 2002-07-30 | 2007-04-25 | 東京エレクトロン株式会社 | Substrate processing equipment |
| US6985373B2 (en) * | 2002-08-23 | 2006-01-10 | Energy Conversion Devices, Inc. | Binary beam steering device |
| WO2006098792A2 (en) * | 2004-12-30 | 2006-09-21 | Msp Corporation | High accuracy vapor generation and delivery for thin film deposition |
| JP4674123B2 (en) * | 2005-06-27 | 2011-04-20 | セイコーエプソン株式会社 | Image processing system and image processing method |
| EP2006414A2 (en) * | 2006-03-30 | 2008-12-24 | Mitsui Engineering & Shipbuilding Co., Ltd. | Atomic layer growing apparatus |
-
2007
- 2007-02-01 KR KR1020070010394A patent/KR100851439B1/en not_active IP Right Cessation
-
2008
- 2008-01-25 JP JP2008014716A patent/JP2008190037A/en active Pending
- 2008-01-31 TW TW097103708A patent/TWI394860B/en not_active IP Right Cessation
- 2008-02-01 CN CN2008100086238A patent/CN101235487B/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1718854A (en) * | 2004-07-07 | 2006-01-11 | 中国航空工业第一集团公司北京航空制造工程研究所 | Supplying device of chemical gaseous phase deposition solid state precusor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008190037A (en) | 2008-08-21 |
| TW200844253A (en) | 2008-11-16 |
| KR100851439B1 (en) | 2008-08-11 |
| KR20080072119A (en) | 2008-08-06 |
| TWI394860B (en) | 2013-05-01 |
| CN101235487A (en) | 2008-08-06 |
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