CN102160157B - 管理基板退火的热预算 - Google Patents

管理基板退火的热预算 Download PDF

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Publication number
CN102160157B
CN102160157B CN200980136613.5A CN200980136613A CN102160157B CN 102160157 B CN102160157 B CN 102160157B CN 200980136613 A CN200980136613 A CN 200980136613A CN 102160157 B CN102160157 B CN 102160157B
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CN
China
Prior art keywords
substrate
energy
zone
anneal
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200980136613.5A
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English (en)
Chinese (zh)
Other versions
CN102160157A (zh
Inventor
斯蒂芬·莫法特
阿布拉什·J·马约尔
森德·拉马默蒂
约瑟夫·拉内什
阿伦·亨特
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Applied Materials Inc
Original Assignee
Applied Materials Inc
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Filing date
Publication date
Priority claimed from US12/212,157 external-priority patent/US20100068898A1/en
Priority claimed from US12/212,214 external-priority patent/US8314369B2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN102160157A publication Critical patent/CN102160157A/zh
Application granted granted Critical
Publication of CN102160157B publication Critical patent/CN102160157B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring

Landscapes

  • Recrystallisation Techniques (AREA)
  • Furnace Details (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
CN200980136613.5A 2008-09-17 2009-09-03 管理基板退火的热预算 Expired - Fee Related CN102160157B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US12/212,157 US20100068898A1 (en) 2008-09-17 2008-09-17 Managing thermal budget in annealing of substrates
US12/212,157 2008-09-17
US12/212,214 2008-09-17
US12/212,214 US8314369B2 (en) 2008-09-17 2008-09-17 Managing thermal budget in annealing of substrates
PCT/US2009/055838 WO2010033389A1 (en) 2008-09-17 2009-09-03 Managing thermal budget in annealing of substrates

Publications (2)

Publication Number Publication Date
CN102160157A CN102160157A (zh) 2011-08-17
CN102160157B true CN102160157B (zh) 2015-11-25

Family

ID=42039812

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980136613.5A Expired - Fee Related CN102160157B (zh) 2008-09-17 2009-09-03 管理基板退火的热预算

Country Status (7)

Country Link
EP (1) EP2342739A4 (https=)
JP (1) JP5611212B2 (https=)
KR (2) KR101868378B1 (https=)
CN (1) CN102160157B (https=)
SG (2) SG10201807844VA (https=)
TW (3) TWI549190B (https=)
WO (1) WO2010033389A1 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8546805B2 (en) * 2012-01-27 2013-10-01 Ultratech, Inc. Two-beam laser annealing with improved temperature performance
US9376731B2 (en) * 2012-05-08 2016-06-28 Applied Materials, Inc. Magneto-thermal processing apparatus and methods
US9239192B2 (en) 2013-02-20 2016-01-19 Taiwan Semiconductor Manufacturing Co., Ltd. Substrate rapid thermal heating system and methods
CN104752174A (zh) * 2013-12-30 2015-07-01 上海微电子装备有限公司 一种激光退火装置及方法
TW201610215A (zh) * 2014-03-27 2016-03-16 應用材料股份有限公司 用於低熱預算處理的循環尖峰退火化學曝露
WO2016070185A1 (en) * 2014-10-31 2016-05-06 Applied Materials, Inc. Integration of laser processing with deposition of electrochemical device layers
WO2016153716A1 (en) * 2015-03-20 2016-09-29 Applied Materials, Inc. An atomic layer process chamber for 3d conformal processing
EP3329510B1 (en) * 2015-07-29 2022-04-13 Applied Materials, Inc. Rotating substrate laser anneal
JP6887234B2 (ja) 2016-09-21 2021-06-16 株式会社日本製鋼所 レーザ照射装置、レーザ照射方法、及び半導体装置の製造方法
KR102099890B1 (ko) * 2017-05-18 2020-04-14 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
KR102061424B1 (ko) * 2018-07-27 2019-12-31 주식회사 코윈디에스티 로이 유리 어닐링 장치
KR102180311B1 (ko) 2018-07-27 2020-11-18 주식회사 코윈디에스티 레이저 어닐링 장치
CN112038223A (zh) * 2020-08-27 2020-12-04 上海华力集成电路制造有限公司 一种改善双激光退火过程中晶圆表面热分布的方法
CN116092981A (zh) * 2023-02-01 2023-05-09 浙江芯科半导体有限公司 用于提升晶圆退火质量的激光退火设备

Citations (6)

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US20020127830A1 (en) * 1997-03-11 2002-09-12 Semiconductor Energy Laboratory Co., Ltd., A Japan Corporation Heating treatment device, heating treatment method and fabrication method of semiconductor device
US6638800B1 (en) * 1992-11-06 2003-10-28 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus and laser processing process
CN1497684A (zh) * 2002-10-07 2004-05-19 ��ʽ����뵼����Դ�о��� 照射激光的方法、激光照射系统和半导体器件的制造方法
US20050103998A1 (en) * 2003-09-29 2005-05-19 Somit Talwar Laser thermal annealing of lightly doped silicon substrates
US20070072400A1 (en) * 2005-09-26 2007-03-29 Bakeman Paul E Jr Apparatus and methods for thermally processing undoped and lightly doped substrates without pre-heating
US20080045040A1 (en) * 2006-08-17 2008-02-21 Toshiba America Electronic Components, Inc. Laser Spike Anneal With Plural Light Sources

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JPS5696835A (en) * 1979-12-29 1981-08-05 Fujitsu Ltd Manufacture of semiconductor device
JPS58106836A (ja) * 1981-12-18 1983-06-25 Hitachi Ltd レ−ザ−アニ−ル装置
JPS58176929A (ja) * 1982-04-09 1983-10-17 Fujitsu Ltd 半導体装置の製造方法
JPH03266424A (ja) * 1990-03-16 1991-11-27 Sony Corp 半導体基板のアニール方法
CN1130756C (zh) 1998-02-13 2003-12-10 精工爱普生株式会社 半导体装置的制造方法及热处理装置
US6771895B2 (en) * 1999-01-06 2004-08-03 Mattson Technology, Inc. Heating device for heating semiconductor wafers in thermal processing chambers
TW457553B (en) * 1999-01-08 2001-10-01 Sony Corp Process for producing thin film semiconductor device and laser irradiation apparatus
AU2001247240A1 (en) * 2000-03-01 2001-09-12 Heraeus Amersil, Inc. Method, apparatus, and article of manufacture for determining an amount of energy needed to bring a quartz workpiece to a fusion weldable condition
JP2003045820A (ja) * 2001-07-30 2003-02-14 Semiconductor Energy Lab Co Ltd レーザ照射装置およびレーザ照射方法、並びに半導体装置の作製方法
US6987240B2 (en) 2002-04-18 2006-01-17 Applied Materials, Inc. Thermal flux processing by scanning
TWI297521B (en) * 2004-01-22 2008-06-01 Ultratech Inc Laser thermal annealing of lightly doped silicon substrates
JP2008080371A (ja) * 2006-09-27 2008-04-10 Sumitomo Heavy Ind Ltd レーザ加工方法、及び、レーザ加工装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6638800B1 (en) * 1992-11-06 2003-10-28 Semiconductor Energy Laboratory Co., Ltd. Laser processing apparatus and laser processing process
US20020127830A1 (en) * 1997-03-11 2002-09-12 Semiconductor Energy Laboratory Co., Ltd., A Japan Corporation Heating treatment device, heating treatment method and fabrication method of semiconductor device
CN1497684A (zh) * 2002-10-07 2004-05-19 ��ʽ����뵼����Դ�о��� 照射激光的方法、激光照射系统和半导体器件的制造方法
US20050103998A1 (en) * 2003-09-29 2005-05-19 Somit Talwar Laser thermal annealing of lightly doped silicon substrates
US20070072400A1 (en) * 2005-09-26 2007-03-29 Bakeman Paul E Jr Apparatus and methods for thermally processing undoped and lightly doped substrates without pre-heating
US20080045040A1 (en) * 2006-08-17 2008-02-21 Toshiba America Electronic Components, Inc. Laser Spike Anneal With Plural Light Sources

Also Published As

Publication number Publication date
TW201013789A (en) 2010-04-01
KR20110053387A (ko) 2011-05-20
KR101868378B1 (ko) 2018-06-18
EP2342739A4 (en) 2013-05-22
JP5611212B2 (ja) 2014-10-22
TWI549190B (zh) 2016-09-11
TW201342480A (zh) 2013-10-16
EP2342739A1 (en) 2011-07-13
WO2010033389A1 (en) 2010-03-25
CN102160157A (zh) 2011-08-17
KR20170130616A (ko) 2017-11-28
SG10201807844VA (en) 2018-10-30
JP2012503311A (ja) 2012-02-02
KR101800404B1 (ko) 2017-11-22
TWI549191B (zh) 2016-09-11
TW201415558A (zh) 2014-04-16
TWI419234B (zh) 2013-12-11
SG193882A1 (en) 2013-10-30

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Address after: American California

Applicant after: Applied Materials Inc.

Address before: American California

Applicant before: Applied Materials Inc.

C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20151125

Termination date: 20190903