CN102143333A - 固态成像器件和成像装置 - Google Patents

固态成像器件和成像装置 Download PDF

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Publication number
CN102143333A
CN102143333A CN2011100236557A CN201110023655A CN102143333A CN 102143333 A CN102143333 A CN 102143333A CN 2011100236557 A CN2011100236557 A CN 2011100236557A CN 201110023655 A CN201110023655 A CN 201110023655A CN 102143333 A CN102143333 A CN 102143333A
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CN
China
Prior art keywords
pixel
signal
pixels
column
pixel region
Prior art date
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Pending
Application number
CN2011100236557A
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English (en)
Chinese (zh)
Inventor
二改教广
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Sony Corp
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Sony Corp
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Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of CN102143333A publication Critical patent/CN102143333A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
    • H04N25/633—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current by using optical black pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN2011100236557A 2010-01-29 2011-01-21 固态成像器件和成像装置 Pending CN102143333A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP019056/10 2010-01-29
JP2010019056A JP5556199B2 (ja) 2010-01-29 2010-01-29 固体撮像素子及び撮像機器

Publications (1)

Publication Number Publication Date
CN102143333A true CN102143333A (zh) 2011-08-03

Family

ID=44341336

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011100236557A Pending CN102143333A (zh) 2010-01-29 2011-01-21 固态成像器件和成像装置

Country Status (3)

Country Link
US (2) US8284277B2 (enExample)
JP (1) JP5556199B2 (enExample)
CN (1) CN102143333A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110557587A (zh) * 2018-05-30 2019-12-10 半导体元件工业有限责任公司 图像传感器和操作该图像传感器的方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201216138A (en) * 2010-10-13 2012-04-16 Chunghwa Picture Tubes Ltd Method for driving photosensor array panel
JP2013211603A (ja) * 2012-03-30 2013-10-10 Sony Corp 撮像装置、撮像方法およびプログラム
JP2015012373A (ja) * 2013-06-27 2015-01-19 株式会社東芝 固体撮像装置
JP6383143B2 (ja) 2013-10-08 2018-08-29 株式会社リコー 撮像素子、画像読取装置、画像形成装置及び撮像方法
JP6545013B2 (ja) * 2015-06-17 2019-07-17 キヤノン株式会社 画像形成方法、画像形成装置、および画像形成プログラム
US10103187B2 (en) * 2015-12-17 2018-10-16 Omnivision Technologies, Inc. Image sensor color correction
KR102559953B1 (ko) * 2016-06-13 2023-07-28 에스케이하이닉스 주식회사 플로팅 확산 영역의 전압 변동 리드아웃 장치 및 그 방법과 그를 이용한 씨모스 이미지 센서
EP3598739B1 (en) * 2018-04-13 2021-08-04 Shenzhen Goodix Technology Co., Ltd. Image sensing circuit and control method thereof
KR20200075962A (ko) * 2018-12-18 2020-06-29 삼성전자주식회사 피드백 루프를 통해 픽셀들의 각각의 변환 이득들을 결정하는 이미지 센서
CN112532807A (zh) * 2019-09-17 2021-03-19 印象认知（北京）科技有限公司 一种图像传感器及降噪方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000196055A (ja) * 1998-12-24 2000-07-14 Toshiba Corp 固体撮像装置
JP2002165136A (ja) * 2000-11-29 2002-06-07 Canon Inc 撮像装置及び撮像システム
JP2006229799A (ja) * 2005-02-21 2006-08-31 Sony Corp 固体撮像素子、固体撮像素子の駆動方法および撮像装置
US20080218615A1 (en) * 2007-03-07 2008-09-11 Altasens, Inc. Apparatus and method for stabilizing image sensor black level

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003222751A (ja) 2001-11-21 2003-08-08 Central Glass Co Ltd 平面光部品の製造方法及び平面光部品
US20110032391A1 (en) * 2009-08-04 2011-02-10 Himax Imaging, Inc. Image Sensor with Peripheral Dummy Pixels
JP2011040976A (ja) * 2009-08-11 2011-02-24 Sony Corp 固体撮像装置、固体撮像装置の駆動方法および電子機器
US8872953B2 (en) * 2009-10-30 2014-10-28 Sony Corporation Solid-state imaging device, manufacturing method thereof, camera, and electronic device
JP5655355B2 (ja) * 2009-11-02 2015-01-21 ソニー株式会社 画素欠陥補正装置、撮像装置、画素欠陥補正方法、およびプログラム
JP2011097542A (ja) * 2009-11-02 2011-05-12 Sony Corp 画素欠陥検出補正装置、撮像装置、画像欠陥検出補正方法、およびプログラム

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000196055A (ja) * 1998-12-24 2000-07-14 Toshiba Corp 固体撮像装置
JP2002165136A (ja) * 2000-11-29 2002-06-07 Canon Inc 撮像装置及び撮像システム
JP2006229799A (ja) * 2005-02-21 2006-08-31 Sony Corp 固体撮像素子、固体撮像素子の駆動方法および撮像装置
US20080218615A1 (en) * 2007-03-07 2008-09-11 Altasens, Inc. Apparatus and method for stabilizing image sensor black level

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110557587A (zh) * 2018-05-30 2019-12-10 半导体元件工业有限责任公司 图像传感器和操作该图像传感器的方法
CN110557587B (zh) * 2018-05-30 2024-06-04 半导体元件工业有限责任公司 图像传感器和操作该图像传感器的方法

Also Published As

Publication number Publication date
US20130010164A1 (en) 2013-01-10
US8922679B2 (en) 2014-12-30
US8284277B2 (en) 2012-10-09
JP5556199B2 (ja) 2014-07-23
JP2011160116A (ja) 2011-08-18
US20110187910A1 (en) 2011-08-04

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