CN102106012B - 用于沉积有机半导体的混合溶剂体系 - Google Patents

用于沉积有机半导体的混合溶剂体系 Download PDF

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Publication number
CN102106012B
CN102106012B CN2009801295021A CN200980129502A CN102106012B CN 102106012 B CN102106012 B CN 102106012B CN 2009801295021 A CN2009801295021 A CN 2009801295021A CN 200980129502 A CN200980129502 A CN 200980129502A CN 102106012 B CN102106012 B CN 102106012B
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CN102106012A (zh
Inventor
罗伯特·S·克拉夫
大卫·H·瑞丁格尔
詹姆斯·C·诺瓦克
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3M Innovative Properties Co
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3M Innovative Properties Co
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/12Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/15Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/40Organosilicon compounds, e.g. TIPS pentacene
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/466Lateral bottom-gate IGFETs comprising only a single gate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/12Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Paints Or Removers (AREA)
CN2009801295021A 2008-06-11 2009-05-29 用于沉积有机半导体的混合溶剂体系 Expired - Fee Related CN102106012B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US6059508P 2008-06-11 2008-06-11
US61/060,595 2008-06-11
PCT/US2009/045571 WO2009151978A1 (en) 2008-06-11 2009-05-29 Mixed solvent systems for deposition of organic semiconductors

Publications (2)

Publication Number Publication Date
CN102106012A CN102106012A (zh) 2011-06-22
CN102106012B true CN102106012B (zh) 2013-05-29

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CN2009801295021A Expired - Fee Related CN102106012B (zh) 2008-06-11 2009-05-29 用于沉积有机半导体的混合溶剂体系

Country Status (5)

Country Link
US (1) US8232550B2 (https=)
EP (1) EP2304821B1 (https=)
JP (1) JP5406284B2 (https=)
CN (1) CN102106012B (https=)
WO (1) WO2009151978A1 (https=)

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WO2011076324A1 (en) * 2009-12-23 2011-06-30 Merck Patent Gmbh Compositions comprising organic semiconducting compounds
SG185680A1 (en) * 2010-05-27 2012-12-28 Merck Patent Gmbh Formulation and method for preparation of organic electronic devices
GB201013820D0 (en) * 2010-08-18 2010-09-29 Cambridge Display Tech Ltd Low contact resistance organic thin film transistors
US8389744B1 (en) * 2011-10-11 2013-03-05 University Of New Hampshire TTPO (5 6,7-trithiapentacene-13-one) and its derivatives: a new class of thermally stable, photooxidatively resistant organic semiconductors
US9293711B2 (en) 2012-08-09 2016-03-22 Polyera Corporation Organic semiconductor formulations
KR102145424B1 (ko) * 2013-11-11 2020-08-18 엘지디스플레이 주식회사 표시장치 제조용 잉크 및 이를 이용한 표시장치의 제조방법
JP6578645B2 (ja) * 2014-10-21 2019-09-25 東ソー株式会社 有機半導体層形成用溶液、有機半導体層、および有機薄膜トランジスタ
CN107836046B (zh) * 2015-07-15 2020-08-04 默克专利有限公司 包含有机半导体化合物的组合物
JP7086488B2 (ja) * 2017-03-21 2022-06-20 日本化薬株式会社 有機半導体組成物、有機薄膜及び有機薄膜トランジスタ
GB2560934A (en) 2017-03-28 2018-10-03 Sumitomo Chemical Co Solvent systems for the preparation of photosensitive organic electronic devices
KR102542436B1 (ko) 2017-06-08 2023-06-13 코닝 인코포레이티드 다른 중합체의 유기 반도체 중합체로의 도핑

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US6265243B1 (en) * 1999-03-29 2001-07-24 Lucent Technologies Inc. Process for fabricating organic circuits
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CN101108783B (zh) * 2001-08-09 2012-04-04 旭化成株式会社 有机半导体元件
US6690029B1 (en) * 2001-08-24 2004-02-10 University Of Kentucky Research Foundation Substituted pentacenes and electronic devices made with substituted pentacenes
US6864396B2 (en) * 2001-09-27 2005-03-08 3M Innovative Properties Company Substituted pentacene semiconductors
US7098525B2 (en) * 2003-05-08 2006-08-29 3M Innovative Properties Company Organic polymers, electronic devices, and methods
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EP1850405A1 (en) 2004-12-28 2007-10-31 Idemitsu Kosan Co., Ltd. Ink for forming organic el coating film and method for production thereof
US7264872B2 (en) 2004-12-30 2007-09-04 3M Innovative Properties Company Durable high index nanocomposites for AR coatings
US7241437B2 (en) * 2004-12-30 2007-07-10 3M Innovative Properties Company Zirconia particles
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JP5055849B2 (ja) * 2006-06-14 2012-10-24 コニカミノルタホールディングス株式会社 表示装置、有機薄膜トランジスタの製造方法
JP2010512005A (ja) 2006-12-01 2010-04-15 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 改善された溶液処理方法による有機半導体膜の性能特性の向上
US20090001356A1 (en) * 2007-06-29 2009-01-01 3M Innovative Properties Company Electronic devices having a solution deposited gate dielectric
US7879688B2 (en) * 2007-06-29 2011-02-01 3M Innovative Properties Company Methods for making electronic devices with a solution deposited gate dielectric
US8956555B2 (en) * 2008-05-30 2015-02-17 3M Innovative Properties Company Silylethynyl pentacene compounds and compositions and methods of making and using the same
JP2011524908A (ja) * 2008-06-19 2011-09-08 スリーエム イノベイティブ プロパティズ カンパニー 溶液処理可能な有機半導体
WO2009158201A1 (en) 2008-06-27 2009-12-30 3M Innovative Properties Company Methods op fabricating crystalline organic semiconductive layers
EP2435446B8 (en) 2009-05-29 2017-02-22 3M Innovative Properties Company Fluorinated silylethynyl pentacene compounds and compositions and methods of making and using the same
US7948016B1 (en) * 2009-11-03 2011-05-24 3M Innovative Properties Company Off-center deposition of organic semiconductor in an organic semiconductor device

Also Published As

Publication number Publication date
CN102106012A (zh) 2011-06-22
JP2011525044A (ja) 2011-09-08
WO2009151978A1 (en) 2009-12-17
US20110092015A1 (en) 2011-04-21
EP2304821A1 (en) 2011-04-06
EP2304821B1 (en) 2012-06-27
US8232550B2 (en) 2012-07-31
JP5406284B2 (ja) 2014-02-05

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