CN102082106B - 铜凸点热声倒装键合方法 - Google Patents
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Abstract
本发明公开了一种铜凸点热声倒装键合方法,在IC芯片焊盘(6)上通过铜线键合方法制作多个铜凸点(2),将带有铜凸点(2)的芯片(3)倒扣于基板(1)上,从芯片(3)上施加超声能(5)和压力(4),从基板(1)底上施加热能(8),完成铜凸点的热声倒装键合。或在基板焊盘(7)上通过铜线键合方法制作多个铜凸点(2),将芯片(3)置于铜凸点(2)上,从芯片(3)上施加超声能(5)和压力(4),从基板(1)底上施加热能(8),完成铜凸点的热声倒装键合,超声能为110-200mA/凸点、压力为50-80g/凸点、热能为300-350℃。本发明是一种能更进一步提高倒装互连的电热性能且工艺简单灵活、键合质量和键合效率高、满足绿色环保要求的铜凸点热声倒装键合方法。
Description
技术领域
本发明涉及一种铜凸点倒装键合方法,特别是涉及一种微电子封装的铜凸点热声倒装键合方法。
背景技术
为满足微电子封装高密度高性能的要求,芯片倒装将是主要互连形式。芯片倒装互连技术是在芯片焊盘上作凸点,然后将芯片倒扣于基板进行凸点与基板间的连接,凸点连接比引线键合连线短,传输速度高,其可靠性提高30~50倍,当前的回流焊倒装可靠性比较高,而且凸点数量多,采用Sn/Pb焊料,对环境及人体的保护极为不利,且回流焊凸点通过刻蚀形成,工艺复杂,成本高,回流焊凸点的电阻率达22微欧/cm。而金凸点比回流焊凸点的导电、导热性能比回流倒装高10倍,金为较软金属,当前业界已开始采用热声倒装键合完成金凸点互连,应用于I/O数量较少的IC封装,其金球倒装工艺简单,低成本,绿色环保,已显示其独特的技术优势和前景。
表1Cu、Au的电学、热学和机械性能比较
从表1可知,铜(Cu)比金(Au)具有更好的导电、导热性能,所以,如果能采用铜凸点倒装键合实现芯片和基板的互连,将能更进一步提高倒装互连的电热性能,为发展高密度高性能的微电子封装技术提供技术支撑。
发明内容
本发明所要解决的技术问题是提供一种能更进一步提高倒装互连的电热性能的铜凸点热声倒装键合方法。
为了解决上述技术问题,本发明提供的铜凸点热声倒装键合方法,根据引线键合方法在IC芯片焊盘上制作铜凸点,由于铜比金硬,必须调节键合参数,大约施加比金线键合大一倍的超声能量、压力、键合时间等,就能制作一致性较好的铜凸点;把带有铜凸点的芯片倒扣于基板上,在芯片上施加超声能,同时施加一定的压力,超声能通过芯片/铜凸点再传递至铜凸点与基板的键合界面,热能从基板底下施加,超声能为150-200mA/凸点、压力为50-80g/凸点、热能为300-350℃,在超声和热、压力的作用下实现铜凸点和基板的焊接键合。
为进一步提高焊接的效果,考虑超声是热声倒装中的敏感参数,把铜凸点置在基板上,芯片放置于铜凸点之上,这样进行倒装键合时,超声从芯片上施加,超声能首先传递到必须焊接的界面,即芯片与铜凸点的键合界面,缩短了能量传递路径,提高了键合效率,同时可弱化铜凸点与基板之间第二次承受超声作用,避免其过键合损伤,超声能为150-200mA/凸点、压力为50-80g/凸点、热能为300-350℃。
采用上述技术方案的铜凸点热声倒装键合方法,为满足高性能IC发展的要求,本发明利用铜优良的电热性能,通过铜线键合方法制作IC芯片的铜凸点,根据超声对金属材料的软化效果(超声对金属的软化效果为热软化的100倍),通过热声倒装键合实现铜凸点与基板的互连;考虑热声倒装的最敏感的超声能,用铜线键合方法把铜凸点制作在基板或芯片上,可优化超声能的传递路径,提高键合效率和避免界面的过键合损伤,进一步提高铜凸点倒装的机电性能;铜凸点倒装为实现无铅(Pn)焊接/绿色环保提供技术支撑。
本明的优点和积极效果:
1、铜线键合方法制作铜凸点,工艺简单灵活。
2、热声倒装实现铜凸点互连,由于超声的效果,提高键合质量和键合效率。
3、超声能传递路径,避免过键合损伤,又能提高了键合效率。
4、铜凸点热声倒装互连,进一步提高微电子封装的电热性能,实现无铅焊接满足绿色环保要求。
综上所述,本发明是一种能更进一步提高倒装互连的电热性能且工艺简单灵活、键合质量和键合效率高、满足绿色环保要求的铜凸点热声倒装键合方法。
附图说明
图1是芯片上制作铜凸点的热声倒装方案示意图;
图2是基板上制作铜凸点的热声倒装方案示意图。
具体实施方式
下面结合附图和具体实施方式对本发明作进一步说明。
实施例1:
如图1,在IC芯片焊盘6上通过铜线键合方法制作多个铜凸点2,将带有铜凸点2的芯片3倒扣于基板1上,从芯片3上施加超声能5和压力4,从基板1底上施加热能8,键合过程的能量参数为超声能为150-200mA/凸点、压力为50-80g/凸点、热能为300-350℃,完成铜凸点的热声倒装键合,实现高性能的IC封装互连技术,满足高性能IC的发展要求。
实施例2:
如图2,在基板焊盘7上通过铜线键合方法制作多个铜凸点2,将芯片3置于铜凸点2上,从芯片3上施加超声能5和压力4,超声能首先达到的是芯片3/铜凸点2界面是必须焊接的界面,而后在传递到铜凸点2/基板1的界面,超声能量首先在必须键合的界面上传递与转化,优化了超声的转化,避免了铜凸点2与基板1的过键合损伤,热能8从基板1底上施加,键合过程的能量参数为超声能为150-200mA/凸点、压力为50-80g/凸点、热能为300-350℃,优化的铜凸点热声倒装键合进一步提高键合效率和键合质量。
Claims (2)
1.一种铜凸点热声倒装键合方法,其特征是:在I C芯片焊盘(6)上通过铜线键合方法制作多个铜凸点(2),将带有铜凸点(2)的芯片(3)倒扣于基板(1)上,从芯片(3)上施加超声能(5)和压力(4),从基板(1)底上施加热能(8),超声能为150-200mA/凸点、压力为50-80g/凸点、热能为300-350℃,完成铜凸点的热声倒装键合。
2.一种铜凸点热声倒装键合方法,其特征是:在基板焊盘(7)上通过铜线键合方法制作多个铜凸点(2),将芯片(3)置于铜凸点(2)上,从芯片(3)上施加超声能(5)和压力(4),从基板(1)底上施加热能(8),超声能为150-200mA/凸点、压力为50-80g/凸点、热能为300-350℃,完成铜凸点的热声倒装键合。
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CN101083217A (zh) * | 2006-05-30 | 2007-12-05 | 中南大学 | 热声倒装键合实验台 |
CN101719485A (zh) * | 2007-11-19 | 2010-06-02 | 日月光半导体制造股份有限公司 | 芯片结构、衬底结构、芯片封装结构及其工艺 |
CN101552217A (zh) * | 2008-04-01 | 2009-10-07 | 日东电工株式会社 | 制造半导体器件的方法 |
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