CN102082106B - 铜凸点热声倒装键合方法 - Google Patents

铜凸点热声倒装键合方法 Download PDF

Info

Publication number
CN102082106B
CN102082106B CN2010105839857A CN201010583985A CN102082106B CN 102082106 B CN102082106 B CN 102082106B CN 2010105839857 A CN2010105839857 A CN 2010105839857A CN 201010583985 A CN201010583985 A CN 201010583985A CN 102082106 B CN102082106 B CN 102082106B
Authority
CN
China
Prior art keywords
chip
copper
flip
bonding
salient points
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2010105839857A
Other languages
English (en)
Other versions
CN102082106A (zh
Inventor
李军辉
马邦科
韩雷
王福亮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Central South University
Original Assignee
Central South University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Central South University filed Critical Central South University
Priority to CN2010105839857A priority Critical patent/CN102082106B/zh
Publication of CN102082106A publication Critical patent/CN102082106A/zh
Application granted granted Critical
Publication of CN102082106B publication Critical patent/CN102082106B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/11Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • H01L2224/131Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13147Copper [Cu] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147Copper (Cu) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00011Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0105Tin [Sn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Abstract

本发明公开了一种铜凸点热声倒装键合方法,在IC芯片焊盘(6)上通过铜线键合方法制作多个铜凸点(2),将带有铜凸点(2)的芯片(3)倒扣于基板(1)上,从芯片(3)上施加超声能(5)和压力(4),从基板(1)底上施加热能(8),完成铜凸点的热声倒装键合。或在基板焊盘(7)上通过铜线键合方法制作多个铜凸点(2),将芯片(3)置于铜凸点(2)上,从芯片(3)上施加超声能(5)和压力(4),从基板(1)底上施加热能(8),完成铜凸点的热声倒装键合,超声能为110-200mA/凸点、压力为50-80g/凸点、热能为300-350℃。本发明是一种能更进一步提高倒装互连的电热性能且工艺简单灵活、键合质量和键合效率高、满足绿色环保要求的铜凸点热声倒装键合方法。

Description

铜凸点热声倒装键合方法
技术领域
本发明涉及一种铜凸点倒装键合方法,特别是涉及一种微电子封装的铜凸点热声倒装键合方法。
背景技术
为满足微电子封装高密度高性能的要求,芯片倒装将是主要互连形式。芯片倒装互连技术是在芯片焊盘上作凸点,然后将芯片倒扣于基板进行凸点与基板间的连接,凸点连接比引线键合连线短,传输速度高,其可靠性提高30~50倍,当前的回流焊倒装可靠性比较高,而且凸点数量多,采用Sn/Pb焊料,对环境及人体的保护极为不利,且回流焊凸点通过刻蚀形成,工艺复杂,成本高,回流焊凸点的电阻率达22微欧/cm。而金凸点比回流焊凸点的导电、导热性能比回流倒装高10倍,金为较软金属,当前业界已开始采用热声倒装键合完成金凸点互连,应用于I/O数量较少的IC封装,其金球倒装工艺简单,低成本,绿色环保,已显示其独特的技术优势和前景。
表1Cu、Au的电学、热学和机械性能比较
Figure BDA0000037724800000011
从表1可知,铜(Cu)比金(Au)具有更好的导电、导热性能,所以,如果能采用铜凸点倒装键合实现芯片和基板的互连,将能更进一步提高倒装互连的电热性能,为发展高密度高性能的微电子封装技术提供技术支撑。
发明内容
本发明所要解决的技术问题是提供一种能更进一步提高倒装互连的电热性能的铜凸点热声倒装键合方法。
为了解决上述技术问题,本发明提供的铜凸点热声倒装键合方法,根据引线键合方法在IC芯片焊盘上制作铜凸点,由于铜比金硬,必须调节键合参数,大约施加比金线键合大一倍的超声能量、压力、键合时间等,就能制作一致性较好的铜凸点;把带有铜凸点的芯片倒扣于基板上,在芯片上施加超声能,同时施加一定的压力,超声能通过芯片/铜凸点再传递至铜凸点与基板的键合界面,热能从基板底下施加,超声能为150-200mA/凸点、压力为50-80g/凸点、热能为300-350℃,在超声和热、压力的作用下实现铜凸点和基板的焊接键合。
为进一步提高焊接的效果,考虑超声是热声倒装中的敏感参数,把铜凸点置在基板上,芯片放置于铜凸点之上,这样进行倒装键合时,超声从芯片上施加,超声能首先传递到必须焊接的界面,即芯片与铜凸点的键合界面,缩短了能量传递路径,提高了键合效率,同时可弱化铜凸点与基板之间第二次承受超声作用,避免其过键合损伤,超声能为150-200mA/凸点、压力为50-80g/凸点、热能为300-350℃。
采用上述技术方案的铜凸点热声倒装键合方法,为满足高性能IC发展的要求,本发明利用铜优良的电热性能,通过铜线键合方法制作IC芯片的铜凸点,根据超声对金属材料的软化效果(超声对金属的软化效果为热软化的100倍),通过热声倒装键合实现铜凸点与基板的互连;考虑热声倒装的最敏感的超声能,用铜线键合方法把铜凸点制作在基板或芯片上,可优化超声能的传递路径,提高键合效率和避免界面的过键合损伤,进一步提高铜凸点倒装的机电性能;铜凸点倒装为实现无铅(Pn)焊接/绿色环保提供技术支撑。
本明的优点和积极效果:
1、铜线键合方法制作铜凸点,工艺简单灵活。
2、热声倒装实现铜凸点互连,由于超声的效果,提高键合质量和键合效率。
3、超声能传递路径,避免过键合损伤,又能提高了键合效率。
4、铜凸点热声倒装互连,进一步提高微电子封装的电热性能,实现无铅焊接满足绿色环保要求。
综上所述,本发明是一种能更进一步提高倒装互连的电热性能且工艺简单灵活、键合质量和键合效率高、满足绿色环保要求的铜凸点热声倒装键合方法。
附图说明
图1是芯片上制作铜凸点的热声倒装方案示意图;
图2是基板上制作铜凸点的热声倒装方案示意图。
具体实施方式
下面结合附图和具体实施方式对本发明作进一步说明。
实施例1:
如图1,在IC芯片焊盘6上通过铜线键合方法制作多个铜凸点2,将带有铜凸点2的芯片3倒扣于基板1上,从芯片3上施加超声能5和压力4,从基板1底上施加热能8,键合过程的能量参数为超声能为150-200mA/凸点、压力为50-80g/凸点、热能为300-350℃,完成铜凸点的热声倒装键合,实现高性能的IC封装互连技术,满足高性能IC的发展要求。
实施例2:
如图2,在基板焊盘7上通过铜线键合方法制作多个铜凸点2,将芯片3置于铜凸点2上,从芯片3上施加超声能5和压力4,超声能首先达到的是芯片3/铜凸点2界面是必须焊接的界面,而后在传递到铜凸点2/基板1的界面,超声能量首先在必须键合的界面上传递与转化,优化了超声的转化,避免了铜凸点2与基板1的过键合损伤,热能8从基板1底上施加,键合过程的能量参数为超声能为150-200mA/凸点、压力为50-80g/凸点、热能为300-350℃,优化的铜凸点热声倒装键合进一步提高键合效率和键合质量。

Claims (2)

1.一种铜凸点热声倒装键合方法,其特征是:在I C芯片焊盘(6)上通过铜线键合方法制作多个铜凸点(2),将带有铜凸点(2)的芯片(3)倒扣于基板(1)上,从芯片(3)上施加超声能(5)和压力(4),从基板(1)底上施加热能(8),超声能为150-200mA/凸点、压力为50-80g/凸点、热能为300-350℃,完成铜凸点的热声倒装键合。
2.一种铜凸点热声倒装键合方法,其特征是:在基板焊盘(7)上通过铜线键合方法制作多个铜凸点(2),将芯片(3)置于铜凸点(2)上,从芯片(3)上施加超声能(5)和压力(4),从基板(1)底上施加热能(8),超声能为150-200mA/凸点、压力为50-80g/凸点、热能为300-350℃,完成铜凸点的热声倒装键合。
CN2010105839857A 2010-12-13 2010-12-13 铜凸点热声倒装键合方法 Expired - Fee Related CN102082106B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010105839857A CN102082106B (zh) 2010-12-13 2010-12-13 铜凸点热声倒装键合方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2010105839857A CN102082106B (zh) 2010-12-13 2010-12-13 铜凸点热声倒装键合方法

Publications (2)

Publication Number Publication Date
CN102082106A CN102082106A (zh) 2011-06-01
CN102082106B true CN102082106B (zh) 2012-04-25

Family

ID=44087983

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010105839857A Expired - Fee Related CN102082106B (zh) 2010-12-13 2010-12-13 铜凸点热声倒装键合方法

Country Status (1)

Country Link
CN (1) CN102082106B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113793813A (zh) * 2021-09-16 2021-12-14 苏州通富超威半导体有限公司 一种用于芯片键合的装置
CN117612947A (zh) * 2023-11-27 2024-02-27 江苏索力德普半导体科技有限公司 一种基于无氧铜铂加厚的芯片封装方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101083217A (zh) * 2006-05-30 2007-12-05 中南大学 热声倒装键合实验台
CN101552217A (zh) * 2008-04-01 2009-10-07 日东电工株式会社 制造半导体器件的方法
CN101719485A (zh) * 2007-11-19 2010-06-02 日月光半导体制造股份有限公司 芯片结构、衬底结构、芯片封装结构及其工艺

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030001286A1 (en) * 2000-01-28 2003-01-02 Ryoichi Kajiwara Semiconductor package and flip chip bonding method therein

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101083217A (zh) * 2006-05-30 2007-12-05 中南大学 热声倒装键合实验台
CN101719485A (zh) * 2007-11-19 2010-06-02 日月光半导体制造股份有限公司 芯片结构、衬底结构、芯片封装结构及其工艺
CN101552217A (zh) * 2008-04-01 2009-10-07 日东电工株式会社 制造半导体器件的方法

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
李军辉 等.热声键合界面的微观结构特性.《中国机械工程》.2005,第16卷(第4期),全文. *
王福亮 等.热超声倒装键合界面的运动传递过程.《机械工程学报》.2008,第44卷(第2期),全文. *
隆志力.芯片封装互连新工艺热超声倒装焊的发展现状.《电子工艺技术》.2004,第25卷(第5期),全文. *

Also Published As

Publication number Publication date
CN102082106A (zh) 2011-06-01

Similar Documents

Publication Publication Date Title
CN101378051B (zh) 半导体器件及其制造方法
US8022558B2 (en) Semiconductor package with ribbon with metal layers
CN101527271A (zh) 一种使用锥面焊盘进行热超声倒装焊的芯片封装方法
CN105355610B (zh) 一种电路装置及制造方法
CN101533814B (zh) 芯片级倒装芯片封装构造
JP7176048B2 (ja) 半導体ダイと受動熱交換器との間に熱界面接合を形成するための装置及び方法
CN115995433B (zh) 功率半导体器件封装结构及其制备方法
KR20190125888A (ko) 반도체 다이들을 스택하는 방법
CN102082106B (zh) 铜凸点热声倒装键合方法
CN101728289B (zh) 一种面阵封装电子元件的室温超声波软钎焊方法
CN101335224B (zh) 半导体封装结构及其制造方法
KR20190136459A (ko) 반도체 다이들을 스택하는 방법 및 반도체 패키지
CN102064160A (zh) 一种包含特殊功率端子的功率模块
CN101083217A (zh) 热声倒装键合实验台
CN1499594A (zh) 制作电子封装的方法以及电子封装
CN106206339B (zh) 一种微铜柱间铜铜直接热超声倒装键合方法及其装置
CN210805773U (zh) 3dic封装结构
JP2011187635A (ja) 半導体装置およびその製造方法
Junhui et al. Effects of ultrasonic power and time on bonding strength and interfacial atomic diffusion during thermosonic flip–chip bonding
CN103633050A (zh) 芯片、芯片封装结构及芯片焊接的方法
CN207602834U (zh) 一种大功率ipm模块端子连接结构
CN204632803U (zh) 一种csp led及基板
CN204834605U (zh) 带有热管系统的功率模块
CN216980556U (zh) 一种基于顶部散热的混合集成电源
CN201527975U (zh) 一种铜线结构的功率晶体管

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120425

Termination date: 20121213