CN102064173A - 一种可控硅整流器静电防护器件 - Google Patents
一种可控硅整流器静电防护器件 Download PDFInfo
- Publication number
- CN102064173A CN102064173A CN 200910198847 CN200910198847A CN102064173A CN 102064173 A CN102064173 A CN 102064173A CN 200910198847 CN200910198847 CN 200910198847 CN 200910198847 A CN200910198847 A CN 200910198847A CN 102064173 A CN102064173 A CN 102064173A
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- Prior art keywords
- injection region
- trap
- controlled rectifier
- silicon controlled
- field oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 22
- 239000010703 silicon Substances 0.000 title claims abstract description 22
- 230000001681 protective effect Effects 0.000 title abstract 4
- 238000002347 injection Methods 0.000 claims abstract description 109
- 239000007924 injection Substances 0.000 claims abstract description 109
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 3
- 150000004706 metal oxides Chemical class 0.000 abstract description 3
- 230000003071 parasitic effect Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 230000006378 damage Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN 200910198847 CN102064173B (zh) | 2009-11-17 | 2009-11-17 | 一种可控硅整流器静电防护器件 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN 200910198847 CN102064173B (zh) | 2009-11-17 | 2009-11-17 | 一种可控硅整流器静电防护器件 |
Publications (2)
Publication Number | Publication Date |
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CN102064173A true CN102064173A (zh) | 2011-05-18 |
CN102064173B CN102064173B (zh) | 2012-09-26 |
Family
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CN 200910198847 Active CN102064173B (zh) | 2009-11-17 | 2009-11-17 | 一种可控硅整流器静电防护器件 |
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CN (1) | CN102064173B (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103378089A (zh) * | 2012-04-28 | 2013-10-30 | 上海华虹Nec电子有限公司 | 一种高压静电保护结构 |
CN103633086A (zh) * | 2013-12-19 | 2014-03-12 | 电子科技大学 | 一种用于esd保护的低触发电压抗闩锁scr |
CN107579065A (zh) * | 2017-10-16 | 2018-01-12 | 湖南静芯微电子技术有限公司 | 一种高维持电压可控硅静电防护器件 |
CN107946372A (zh) * | 2017-11-28 | 2018-04-20 | 电子科技大学 | 用于esd防护的可控硅整流器 |
CN109585443A (zh) * | 2018-11-29 | 2019-04-05 | 中国电子科技集团公司第四十七研究所 | 硅衬底内部esd结构的制造方法 |
CN112992890A (zh) * | 2019-12-13 | 2021-06-18 | 福建省福芯电子科技有限公司 | 一种高压静电防护器件和电路 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1183592C (zh) * | 2001-04-04 | 2005-01-05 | 华邦电子股份有限公司 | 可控硅整流装置和实现静电放电保护及抗闩锁的方法 |
CN100583429C (zh) * | 2008-05-16 | 2010-01-20 | 浙江大学 | Pmos管嵌入式双向可控硅静电防护器件 |
-
2009
- 2009-11-17 CN CN 200910198847 patent/CN102064173B/zh active Active
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103378089A (zh) * | 2012-04-28 | 2013-10-30 | 上海华虹Nec电子有限公司 | 一种高压静电保护结构 |
CN103633086A (zh) * | 2013-12-19 | 2014-03-12 | 电子科技大学 | 一种用于esd保护的低触发电压抗闩锁scr |
CN103633086B (zh) * | 2013-12-19 | 2016-05-11 | 电子科技大学 | 一种用于esd保护的低触发电压抗闩锁scr |
CN107579065A (zh) * | 2017-10-16 | 2018-01-12 | 湖南静芯微电子技术有限公司 | 一种高维持电压可控硅静电防护器件 |
CN107579065B (zh) * | 2017-10-16 | 2024-01-05 | 湖南静芯微电子技术有限公司 | 一种高维持电压可控硅静电防护器件 |
CN107946372A (zh) * | 2017-11-28 | 2018-04-20 | 电子科技大学 | 用于esd防护的可控硅整流器 |
CN109585443A (zh) * | 2018-11-29 | 2019-04-05 | 中国电子科技集团公司第四十七研究所 | 硅衬底内部esd结构的制造方法 |
CN112992890A (zh) * | 2019-12-13 | 2021-06-18 | 福建省福芯电子科技有限公司 | 一种高压静电防护器件和电路 |
Also Published As
Publication number | Publication date |
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CN102064173B (zh) | 2012-09-26 |
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Owner name: JIANGYIN SUNNY ORIENT TECHNOLOGY CO., LTD. Effective date: 20141118 |
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Effective date of registration: 20141118 Address after: 301 room 214000, information industry zone, Wuxi New District, Jiangsu Patentee after: Wuxi China Resources Semico Co., Ltd. Patentee after: Jiangyin Sunny Orient Technology Co., Ltd. Address before: 301 room 214000, information industry zone, Wuxi New District, Jiangsu Patentee before: Wuxi China Resources Semico Co., Ltd. |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20161011 Address after: 301 room 214000, information industry zone, Wuxi New District, Jiangsu Patentee after: Wuxi China Resources Semico Co., Ltd. Address before: 301 room 214000, information industry zone, Wuxi New District, Jiangsu Patentee before: Wuxi China Resources Semico Co., Ltd. Patentee before: Jiangyin Sunny Orient Technology Co., Ltd. |
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CP03 | Change of name, title or address |
Address after: 214135 -6, Linghu Avenue, Wuxi Taihu international science and Technology Park, Wuxi, Jiangsu, China, 180 Patentee after: China Resources micro integrated circuit (Wuxi) Co., Ltd Address before: 301 room 214000, information industry zone, Wuxi New District, Jiangsu Patentee before: WUXI CHINA RESOURCES SEMICO Co.,Ltd. |
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CP03 | Change of name, title or address |