CN102047450A - 化合物半导体发光元件、采用该化合物半导体发光元件的照明装置以及化合物半导体发光元件的制造方法 - Google Patents
化合物半导体发光元件、采用该化合物半导体发光元件的照明装置以及化合物半导体发光元件的制造方法 Download PDFInfo
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- CN102047450A CN102047450A CN2009801198869A CN200980119886A CN102047450A CN 102047450 A CN102047450 A CN 102047450A CN 2009801198869 A CN2009801198869 A CN 2009801198869A CN 200980119886 A CN200980119886 A CN 200980119886A CN 102047450 A CN102047450 A CN 102047450A
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
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- H01L21/02639—Preparation of substrate for selective deposition
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
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- Engineering & Computer Science (AREA)
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
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Abstract
Description
Claims (10)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008-137220 | 2008-05-26 | ||
JP2008137220A JP5145120B2 (ja) | 2008-05-26 | 2008-05-26 | 化合物半導体発光素子およびそれを用いる照明装置ならびに化合物半導体発光素子の製造方法 |
PCT/JP2009/059504 WO2009145131A1 (ja) | 2008-05-26 | 2009-05-25 | 化合物半導体発光素子およびそれを用いる照明装置ならびに化合物半導体発光素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102047450A true CN102047450A (zh) | 2011-05-04 |
CN102047450B CN102047450B (zh) | 2013-03-13 |
Family
ID=41377006
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009801198869A Expired - Fee Related CN102047450B (zh) | 2008-05-26 | 2009-05-25 | 化合物半导体发光元件、采用该化合物半导体发光元件的照明装置以及化合物半导体发光元件的制造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8247791B2 (zh) |
EP (1) | EP2290710B1 (zh) |
JP (1) | JP5145120B2 (zh) |
KR (1) | KR101196579B1 (zh) |
CN (1) | CN102047450B (zh) |
WO (1) | WO2009145131A1 (zh) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8237151B2 (en) | 2009-01-09 | 2012-08-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Diode-based devices and methods for making the same |
EP2352011A4 (en) | 2008-10-29 | 2013-11-27 | Panasonic Corp | DETECTION ELEMENT, DETECTOR AND OXYGEN CONCENTRATION ANALYZER |
KR101517851B1 (ko) * | 2009-03-26 | 2015-05-06 | 삼성전자 주식회사 | 반도체 소자의 제조 방법 |
US8409965B2 (en) * | 2011-04-26 | 2013-04-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and structure for LED with nano-patterned substrate |
US9035278B2 (en) | 2011-09-26 | 2015-05-19 | Glo Ab | Coalesced nanowire structures with interstitial voids and method for manufacturing the same |
US8350249B1 (en) | 2011-09-26 | 2013-01-08 | Glo Ab | Coalesced nanowire structures with interstitial voids and method for manufacturing the same |
JP5896565B2 (ja) * | 2012-10-04 | 2016-03-30 | 株式会社ナノマテリアル研究所 | 半導体デバイス |
FR2997420B1 (fr) | 2012-10-26 | 2017-02-24 | Commissariat Energie Atomique | Procede de croissance d'au moins un nanofil a partir d'une couche d'un metal de transition nitrure obtenue en deux etapes |
FR2997558B1 (fr) * | 2012-10-26 | 2015-12-18 | Aledia | Dispositif opto-electrique et son procede de fabrication |
US9537044B2 (en) * | 2012-10-26 | 2017-01-03 | Aledia | Optoelectric device and method for manufacturing the same |
FR2997557B1 (fr) | 2012-10-26 | 2016-01-01 | Commissariat Energie Atomique | Dispositif electronique a nanofil(s) muni d'une couche tampon en metal de transition, procede de croissance d'au moins un nanofil, et procede de fabrication d'un dispositif |
FR3004006B1 (fr) * | 2013-03-28 | 2016-10-07 | Aledia | Dispositif electroluminescent a nanofils actifs et nanofils de contact et procede de fabrication |
JP6227128B2 (ja) * | 2013-06-07 | 2017-11-08 | グロ アーベーGlo Ab | マルチカラーled及びその製造方法 |
KR102227770B1 (ko) | 2014-08-29 | 2021-03-16 | 삼성전자주식회사 | 나노구조 반도체 발광소자 |
US9593820B1 (en) | 2016-09-28 | 2017-03-14 | Ford Global Technologies, Llc | Vehicle illumination system |
JP7147132B2 (ja) * | 2017-05-31 | 2022-10-05 | セイコーエプソン株式会社 | 発光装置、プロジェクター、および発光装置の製造方法 |
JP6988173B2 (ja) | 2017-05-31 | 2022-01-05 | セイコーエプソン株式会社 | 発光装置およびプロジェクター |
JP6988460B2 (ja) | 2017-12-26 | 2022-01-05 | セイコーエプソン株式会社 | 発光装置、発光装置の製造方法、およびプロジェクター |
JP7207012B2 (ja) | 2019-02-27 | 2023-01-18 | セイコーエプソン株式会社 | 発光装置の製造方法、発光装置、およびプロジェクター |
FR3098013B1 (fr) * | 2019-06-25 | 2021-07-02 | Commissariat Energie Atomique | Procédé de fabrication d'un dispositif optoélectronique à diodes électroluminescentes de type axial |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7122827B2 (en) * | 2003-10-15 | 2006-10-17 | General Electric Company | Monolithic light emitting devices based on wide bandgap semiconductor nanostructures and methods for making same |
JP2005136238A (ja) * | 2003-10-30 | 2005-05-26 | Kyocera Corp | 発光ダイオードアレイ装置及びそれを用いた発光ダイオードプリンタ |
JP4160000B2 (ja) | 2004-02-13 | 2008-10-01 | ドンゴク ユニバーシティ インダストリー アカデミック コーポレイション ファウンデイション | 発光ダイオードおよびその製造方法 |
US7132677B2 (en) * | 2004-02-13 | 2006-11-07 | Dongguk University | Super bright light emitting diode of nanorod array structure having InGaN quantum well and method for manufacturing the same |
US7030495B2 (en) * | 2004-03-19 | 2006-04-18 | International Business Machines Corporation | Method for fabricating a self-aligned nanocolumnar airbridge and structure produced thereby |
US8088293B2 (en) * | 2004-07-29 | 2012-01-03 | Micron Technology, Inc. | Methods of forming reticles configured for imprint lithography |
TWI442456B (zh) | 2004-08-31 | 2014-06-21 | Sophia School Corp | 發光元件 |
WO2006060599A2 (en) * | 2004-12-02 | 2006-06-08 | The Regents Of The University Of California | Semiconductor devices based on coalesced nano-rod arrays |
KR100668964B1 (ko) | 2005-09-27 | 2007-01-12 | 엘지전자 주식회사 | 나노 홈을 갖는 발광 소자 및 그의 제조 방법 |
JP4552828B2 (ja) * | 2005-10-26 | 2010-09-29 | パナソニック電工株式会社 | 半導体発光素子の製造方法 |
US8390023B2 (en) | 2006-10-20 | 2013-03-05 | Panasonic Corporation | Sapphire substrate, nitride semiconductor luminescent element using the sapphire substrate, and method for manufacturing the nitride semiconductor luminescent element |
US8263990B2 (en) | 2008-03-14 | 2012-09-11 | Panasonic Corporation | Compound semiconductor light-emitting element and illumination device using the same, and method for manufacturing compound semiconductor light-emitting element |
US7906354B1 (en) * | 2010-03-30 | 2011-03-15 | Eastman Kodak Company | Light emitting nanowire device |
-
2008
- 2008-05-26 JP JP2008137220A patent/JP5145120B2/ja not_active Expired - Fee Related
-
2009
- 2009-05-25 EP EP09754639A patent/EP2290710B1/en not_active Not-in-force
- 2009-05-25 US US12/993,509 patent/US8247791B2/en not_active Expired - Fee Related
- 2009-05-25 KR KR1020107027011A patent/KR101196579B1/ko not_active IP Right Cessation
- 2009-05-25 CN CN2009801198869A patent/CN102047450B/zh not_active Expired - Fee Related
- 2009-05-25 WO PCT/JP2009/059504 patent/WO2009145131A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
KR20110003568A (ko) | 2011-01-12 |
KR101196579B1 (ko) | 2012-11-02 |
US8247791B2 (en) | 2012-08-21 |
JP5145120B2 (ja) | 2013-02-13 |
CN102047450B (zh) | 2013-03-13 |
EP2290710A4 (en) | 2011-06-29 |
WO2009145131A1 (ja) | 2009-12-03 |
EP2290710A1 (en) | 2011-03-02 |
EP2290710B1 (en) | 2012-08-15 |
US20110062453A1 (en) | 2011-03-17 |
JP2009283876A (ja) | 2009-12-03 |
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