CN102017813A - 等离子体处理腔室的非平面面板 - Google Patents
等离子体处理腔室的非平面面板 Download PDFInfo
- Publication number
- CN102017813A CN102017813A CN200980115050.1A CN200980115050A CN102017813A CN 102017813 A CN102017813 A CN 102017813A CN 200980115050 A CN200980115050 A CN 200980115050A CN 102017813 A CN102017813 A CN 102017813A
- Authority
- CN
- China
- Prior art keywords
- substrate
- conductive panel
- electrode
- groove
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Gas-Filled Discharge Tubes (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/110,879 US8097082B2 (en) | 2008-04-28 | 2008-04-28 | Nonplanar faceplate for a plasma processing chamber |
| US12/110,879 | 2008-04-28 | ||
| PCT/US2009/039674 WO2009134588A2 (en) | 2008-04-28 | 2009-04-06 | Nonplanar faceplate for a plasma processing chamber |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102017813A true CN102017813A (zh) | 2011-04-13 |
Family
ID=41215290
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200980115050.1A Pending CN102017813A (zh) | 2008-04-28 | 2009-04-06 | 等离子体处理腔室的非平面面板 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8097082B2 (enExample) |
| JP (1) | JP5073097B2 (enExample) |
| KR (1) | KR20100135967A (enExample) |
| CN (1) | CN102017813A (enExample) |
| TW (1) | TWI395517B (enExample) |
| WO (1) | WO2009134588A2 (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107937886A (zh) * | 2017-11-14 | 2018-04-20 | 武汉华星光电半导体显示技术有限公司 | 化学气相沉积设备及成膜方法 |
| CN110277293A (zh) * | 2018-02-05 | 2019-09-24 | 朗姆研究公司 | 用于等离子体处理中均匀性控制的锥形上电极 |
| CN111370287A (zh) * | 2020-03-24 | 2020-07-03 | 长江存储科技有限责任公司 | 一种上电极设备以及等离子体处理装置 |
| CN113939893A (zh) * | 2019-06-07 | 2022-01-14 | 应用材料公司 | 具有弯曲表面的面板 |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7413612B2 (en) * | 2003-07-10 | 2008-08-19 | Applied Materials, Inc. | In situ substrate holder leveling method and apparatus |
| US7572340B2 (en) * | 2004-11-29 | 2009-08-11 | Applied Materials, Inc. | High resolution substrate holder leveling device and method |
| US10100408B2 (en) | 2014-03-03 | 2018-10-16 | Applied Materials, Inc. | Edge hump reduction faceplate by plasma modulation |
| WO2016061475A1 (en) * | 2014-10-17 | 2016-04-21 | Lam Research Corporation | Gas supply delivery arrangement including a gas splitter for tunable gas flow control |
| CN110071057A (zh) * | 2018-01-24 | 2019-07-30 | 应用材料公司 | 加热的陶瓷面板 |
| US11236424B2 (en) * | 2019-11-01 | 2022-02-01 | Applied Materials, Inc. | Process kit for improving edge film thickness uniformity on a substrate |
| US20210287881A1 (en) * | 2020-03-12 | 2021-09-16 | Applied Materials, Inc. | Methods and apparatus for tuning semiconductor processes |
| US20220049355A1 (en) * | 2020-08-14 | 2022-02-17 | Changxin Memory Technologies, Inc. | Spray head, chemical vapor deposition device, and working method of chemical vapor deposition device |
| KR102793905B1 (ko) | 2020-08-14 | 2025-04-08 | 삼성전자주식회사 | 상부 전극 및 이를 포함하는 기판 처리 장치 |
| US12338530B2 (en) * | 2021-07-09 | 2025-06-24 | Applied Materials, Inc. | Shaped showerhead for edge plasma modulation |
| US20250029849A1 (en) * | 2023-07-18 | 2025-01-23 | Applied Materials, Inc. | Shaped faceplate for extreme edge film uniformity |
Family Cites Families (59)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US650253A (en) * | 1899-11-23 | 1900-05-22 | Henry Keller | Thresher. |
| US3830194A (en) | 1972-09-28 | 1974-08-20 | Applied Materials Tech | Susceptor support structure and docking assembly |
| US4455467A (en) | 1981-09-21 | 1984-06-19 | General Electric Company | Metal rack for microwave oven |
| US4522149A (en) | 1983-11-21 | 1985-06-11 | General Instrument Corp. | Reactor and susceptor for chemical vapor deposition process |
| US4809421A (en) | 1984-01-16 | 1989-03-07 | Precision Brand Products, Inc. | Slotted shim |
| US5000113A (en) | 1986-12-19 | 1991-03-19 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
| JPS644481A (en) * | 1987-06-24 | 1989-01-09 | Minoru Sugawara | Parallel-plate discharge electrode |
| US4927991A (en) | 1987-11-10 | 1990-05-22 | The Pillsbury Company | Susceptor in combination with grid for microwave oven package |
| US5044943A (en) | 1990-08-16 | 1991-09-03 | Applied Materials, Inc. | Spoked susceptor support for enhanced thermal uniformity of susceptor in semiconductor wafer processing apparatus |
| US5173580A (en) | 1990-11-15 | 1992-12-22 | The Pillsbury Company | Susceptor with conductive border for heating foods in a microwave oven |
| US5820686A (en) | 1993-01-21 | 1998-10-13 | Moore Epitaxial, Inc. | Multi-layer susceptor for rapid thermal process reactors |
| US5352294A (en) | 1993-01-28 | 1994-10-04 | White John M | Alignment of a shadow frame and large flat substrates on a support |
| JP2662365B2 (ja) | 1993-01-28 | 1997-10-08 | アプライド マテリアルズ インコーポレイテッド | 改良された排出システムを有する単一基板式の真空処理装置 |
| US5421893A (en) | 1993-02-26 | 1995-06-06 | Applied Materials, Inc. | Susceptor drive and wafer displacement mechanism |
| US5439524A (en) | 1993-04-05 | 1995-08-08 | Vlsi Technology, Inc. | Plasma processing apparatus |
| US5332443A (en) | 1993-06-09 | 1994-07-26 | Applied Materials, Inc. | Lift fingers for substrate processing apparatus |
| US5614055A (en) * | 1993-08-27 | 1997-03-25 | Applied Materials, Inc. | High density plasma CVD and etching reactor |
| US5628869A (en) | 1994-05-09 | 1997-05-13 | Lsi Logic Corporation | Plasma enhanced chemical vapor reactor with shaped electrodes |
| WO1997009737A1 (en) | 1995-09-01 | 1997-03-13 | Advanced Semiconductor Materials America, Inc. | Wafer support system |
| JPH09306896A (ja) * | 1996-03-15 | 1997-11-28 | Sumitomo Metal Ind Ltd | プラズマ処理装置およびプラズマ処理方法 |
| US5844205A (en) | 1996-04-19 | 1998-12-01 | Applied Komatsu Technology, Inc. | Heated substrate support structure |
| US5819434A (en) | 1996-04-25 | 1998-10-13 | Applied Materials, Inc. | Etch enhancement using an improved gas distribution plate |
| KR100252210B1 (ko) * | 1996-12-24 | 2000-04-15 | 윤종용 | 반도체장치 제조용 건식식각장치 |
| US5981899A (en) | 1997-01-17 | 1999-11-09 | Balzers Aktiengesellschaft | Capacitively coupled RF-plasma reactor |
| ATE267890T1 (de) | 1997-06-13 | 2004-06-15 | Unaxis Trading Ag | Verfahren zur herstellung von werkstücken, die mit einer epitaktischen schicht beschichtet sind |
| US20020011215A1 (en) | 1997-12-12 | 2002-01-31 | Goushu Tei | Plasma treatment apparatus and method of manufacturing optical parts using the same |
| KR100279963B1 (ko) | 1997-12-30 | 2001-04-02 | 윤종용 | 반도체소자제조용가스디퓨져및이를설치한반응로 |
| AU2186099A (en) | 1998-02-09 | 1999-08-23 | Nikon Corporation | Apparatus for supporting base plate, apparatus and method for transferring base plate, method of replacing base plate, and exposure apparatus and method of manufacturing the same |
| GB9808825D0 (en) | 1998-04-24 | 1998-06-24 | Nimbus Communications Int Ltd | A disk recording system and a method of controlling the rotation of a turntable in such a disk recording system |
| US6182603B1 (en) | 1998-07-13 | 2001-02-06 | Applied Komatsu Technology, Inc. | Surface-treated shower head for use in a substrate processing chamber |
| US6619131B2 (en) | 1998-07-16 | 2003-09-16 | Unaxis Balzers Ag | Combination pressure sensor with capacitive and thermal elements |
| WO2000019483A1 (de) | 1998-09-30 | 2000-04-06 | Unaxis Balzers Aktiengesellschaft | Vakuumbehandlungskammer und verfahren zur oberflächenbehandlung |
| TW469534B (en) * | 1999-02-23 | 2001-12-21 | Matsushita Electric Industrial Co Ltd | Plasma processing method and apparatus |
| JP3417328B2 (ja) * | 1999-02-23 | 2003-06-16 | 松下電器産業株式会社 | プラズマ処理方法及び装置 |
| US6344420B1 (en) | 1999-03-15 | 2002-02-05 | Kabushiki Kaisha Toshiba | Plasma processing method and plasma processing apparatus |
| JP3595853B2 (ja) * | 1999-03-18 | 2004-12-02 | 日本エー・エス・エム株式会社 | プラズマcvd成膜装置 |
| US6228438B1 (en) | 1999-08-10 | 2001-05-08 | Unakis Balzers Aktiengesellschaft | Plasma reactor for the treatment of large size substrates |
| US6149365A (en) | 1999-09-21 | 2000-11-21 | Applied Komatsu Technology, Inc. | Support frame for substrates |
| US6961490B2 (en) | 2000-01-27 | 2005-11-01 | Unaxis-Balzers Aktiengesellschaft | Waveguide plate and process for its production and microtitre plate |
| US6510263B1 (en) | 2000-01-27 | 2003-01-21 | Unaxis Balzers Aktiengesellschaft | Waveguide plate and process for its production and microtitre plate |
| US6900596B2 (en) * | 2002-07-09 | 2005-05-31 | Applied Materials, Inc. | Capacitively coupled plasma reactor with uniform radial distribution of plasma |
| US6502530B1 (en) | 2000-04-26 | 2003-01-07 | Unaxis Balzers Aktiengesellschaft | Design of gas injection for the electrode in a capacitively coupled RF plasma reactor |
| US6383573B1 (en) | 2000-05-17 | 2002-05-07 | Unaxis Balzers Aktiengesellschaft | Process for manufacturing coated plastic body |
| KR100332314B1 (ko) | 2000-06-24 | 2002-04-12 | 서성기 | 박막증착용 반응용기 |
| US6447980B1 (en) | 2000-07-19 | 2002-09-10 | Clariant Finance (Bvi) Limited | Photoresist composition for deep UV and process thereof |
| US6916407B2 (en) | 2000-11-27 | 2005-07-12 | Unaxis Trading Ag | Target comprising thickness profiling for an RF magnetron |
| US6962732B2 (en) | 2001-08-23 | 2005-11-08 | Applied Materials, Inc. | Process for controlling thin film uniformity and products produced thereby |
| US6793733B2 (en) * | 2002-01-25 | 2004-09-21 | Applied Materials Inc. | Gas distribution showerhead |
| JP3872363B2 (ja) | 2002-03-12 | 2007-01-24 | 京セラ株式会社 | Cat−PECVD法 |
| JP4044368B2 (ja) * | 2002-05-22 | 2008-02-06 | 松下電器産業株式会社 | プラズマ処理方法及び装置 |
| US7270713B2 (en) | 2003-01-07 | 2007-09-18 | Applied Materials, Inc. | Tunable gas distribution plate assembly |
| US7083702B2 (en) | 2003-06-12 | 2006-08-01 | Applied Materials, Inc. | RF current return path for a large area substrate plasma reactor |
| JP4563729B2 (ja) * | 2003-09-04 | 2010-10-13 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| ATE364897T1 (de) | 2003-09-10 | 2007-07-15 | Oc Oerlikon Balzers Ag | Spannungsungleichförmigkeits- kompensationsverfahren für einen hochfrequenz- plasmareaktor zur behandlung rechteckiger grossflächiger substrate |
| US8074599B2 (en) * | 2004-05-12 | 2011-12-13 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser curvature |
| US20060005771A1 (en) | 2004-07-12 | 2006-01-12 | Applied Materials, Inc. | Apparatus and method of shaping profiles of large-area PECVD electrodes |
| US7429410B2 (en) | 2004-09-20 | 2008-09-30 | Applied Materials, Inc. | Diffuser gravity support |
| KR20070089533A (ko) | 2006-02-28 | 2007-08-31 | 삼성전자주식회사 | 플라즈마 처리설비 |
| JP2011071544A (ja) * | 2010-12-06 | 2011-04-07 | Ulvac Japan Ltd | プラズマ処理方法及び装置並びにプラズマcvd方法及び装置 |
-
2008
- 2008-04-28 US US12/110,879 patent/US8097082B2/en not_active Expired - Fee Related
-
2009
- 2009-04-06 JP JP2011507519A patent/JP5073097B2/ja not_active Expired - Fee Related
- 2009-04-06 CN CN200980115050.1A patent/CN102017813A/zh active Pending
- 2009-04-06 KR KR1020107026833A patent/KR20100135967A/ko not_active Ceased
- 2009-04-06 WO PCT/US2009/039674 patent/WO2009134588A2/en not_active Ceased
- 2009-04-28 TW TW098114076A patent/TWI395517B/zh not_active IP Right Cessation
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107937886A (zh) * | 2017-11-14 | 2018-04-20 | 武汉华星光电半导体显示技术有限公司 | 化学气相沉积设备及成膜方法 |
| CN110277293A (zh) * | 2018-02-05 | 2019-09-24 | 朗姆研究公司 | 用于等离子体处理中均匀性控制的锥形上电极 |
| CN113939893A (zh) * | 2019-06-07 | 2022-01-14 | 应用材料公司 | 具有弯曲表面的面板 |
| US11851759B2 (en) | 2019-06-07 | 2023-12-26 | Applied Materials, Inc. | Faceplate having a curved surface |
| CN113939893B (zh) * | 2019-06-07 | 2024-08-06 | 应用材料公司 | 具有弯曲表面的面板 |
| US12110590B2 (en) | 2019-06-07 | 2024-10-08 | Applied Materials, Inc. | Faceplate having a curved surface |
| CN111370287A (zh) * | 2020-03-24 | 2020-07-03 | 长江存储科技有限责任公司 | 一种上电极设备以及等离子体处理装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2009134588A3 (en) | 2010-03-18 |
| JP2011518959A (ja) | 2011-06-30 |
| US20090269512A1 (en) | 2009-10-29 |
| KR20100135967A (ko) | 2010-12-27 |
| TW201008398A (en) | 2010-02-16 |
| US8097082B2 (en) | 2012-01-17 |
| WO2009134588A2 (en) | 2009-11-05 |
| TWI395517B (zh) | 2013-05-01 |
| JP5073097B2 (ja) | 2012-11-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102017813A (zh) | 等离子体处理腔室的非平面面板 | |
| JP7176860B6 (ja) | 前駆体の流れを改善する半導体処理チャンバ | |
| KR102422656B1 (ko) | 프로세스 균일성을 증대하기 위한 방법 및 시스템 | |
| US20140138030A1 (en) | Capacitively coupled plasma equipment with uniform plasma density | |
| CN101689492B (zh) | 处理基板边缘区域的装置与方法 | |
| US20090165722A1 (en) | Apparatus for treating substrate | |
| TWI502619B (zh) | 用於電漿處理設備之電極、電漿處理設備、以及使用電漿處理設備產生電漿的方法 | |
| KR20120080544A (ko) | 포커스 링 및 이 포커스 링을 구비하는 기판 처리 장치 | |
| WO2014172112A1 (en) | Capacitively coupled plasma equipment with uniform plasma density | |
| KR102000012B1 (ko) | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 | |
| KR100735937B1 (ko) | 기판 유지 부재 및 기판 처리 장치 | |
| KR102083854B1 (ko) | 기판 처리 장치 및 기판 처리 방법 | |
| TWI774308B (zh) | 用於高頻處理的蓋堆疊 | |
| JP7053809B2 (ja) | 堆積の均一性を改善するための、様々なプロファイルを有する側部を有するシャドーフレーム | |
| US9117633B2 (en) | Plasma processing apparatus and processing gas supply structure thereof | |
| KR102421346B1 (ko) | 플라즈마 장비 | |
| KR101171988B1 (ko) | 플라즈마 처리장치 | |
| TW202115767A (zh) | 電漿處理裝置 | |
| CN119852157B (zh) | 一种等离子体处理装置及其处理晶片的方法 | |
| KR20230092684A (ko) | 링 어셈블리 및 이를 포함하는 기판 처리 장치 | |
| KR20230092672A (ko) | 포커스 링 및 이를 포함하는 기판 처리 장치 | |
| KR20130036619A (ko) | 플라즈마 처리 장치 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C53 | Correction of patent of invention or patent application | ||
| CB02 | Change of applicant information |
Address after: American California Applicant after: Applied Materials Inc. Address before: American California Applicant before: Applied Materials Inc. |
|
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20110413 |