TWI395517B - 電漿處理腔室之非平面面板 - Google Patents

電漿處理腔室之非平面面板 Download PDF

Info

Publication number
TWI395517B
TWI395517B TW098114076A TW98114076A TWI395517B TW I395517 B TWI395517 B TW I395517B TW 098114076 A TW098114076 A TW 098114076A TW 98114076 A TW98114076 A TW 98114076A TW I395517 B TWI395517 B TW I395517B
Authority
TW
Taiwan
Prior art keywords
substrate
conductive panel
plasma
bevel
gas distribution
Prior art date
Application number
TW098114076A
Other languages
English (en)
Chinese (zh)
Other versions
TW201008398A (en
Inventor
Jianhua Zhou
Deenesh Padhi
Karthik Janakiraman
Siu F Cheng
Hang Yu
Yoganand N Saripalli
Tersem Summan
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW201008398A publication Critical patent/TW201008398A/zh
Application granted granted Critical
Publication of TWI395517B publication Critical patent/TWI395517B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Gas-Filled Discharge Tubes (AREA)
TW098114076A 2008-04-28 2009-04-28 電漿處理腔室之非平面面板 TWI395517B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/110,879 US8097082B2 (en) 2008-04-28 2008-04-28 Nonplanar faceplate for a plasma processing chamber

Publications (2)

Publication Number Publication Date
TW201008398A TW201008398A (en) 2010-02-16
TWI395517B true TWI395517B (zh) 2013-05-01

Family

ID=41215290

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098114076A TWI395517B (zh) 2008-04-28 2009-04-28 電漿處理腔室之非平面面板

Country Status (6)

Country Link
US (1) US8097082B2 (enExample)
JP (1) JP5073097B2 (enExample)
KR (1) KR20100135967A (enExample)
CN (1) CN102017813A (enExample)
TW (1) TWI395517B (enExample)
WO (1) WO2009134588A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI844050B (zh) * 2021-07-09 2024-06-01 美商應用材料股份有限公司 半導體處理腔室及處理基板的方法

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7413612B2 (en) * 2003-07-10 2008-08-19 Applied Materials, Inc. In situ substrate holder leveling method and apparatus
US7572340B2 (en) * 2004-11-29 2009-08-11 Applied Materials, Inc. High resolution substrate holder leveling device and method
US10100408B2 (en) 2014-03-03 2018-10-16 Applied Materials, Inc. Edge hump reduction faceplate by plasma modulation
WO2016061475A1 (en) * 2014-10-17 2016-04-21 Lam Research Corporation Gas supply delivery arrangement including a gas splitter for tunable gas flow control
CN107937886A (zh) * 2017-11-14 2018-04-20 武汉华星光电半导体显示技术有限公司 化学气相沉积设备及成膜方法
CN110071057A (zh) * 2018-01-24 2019-07-30 应用材料公司 加热的陶瓷面板
US20190244793A1 (en) * 2018-02-05 2019-08-08 Lam Research Corporation Tapered upper electrode for uniformity control in plasma processing
WO2020247269A1 (en) * 2019-06-07 2020-12-10 Applied Materials, Inc. Faceplate having a curved surface
US11236424B2 (en) * 2019-11-01 2022-02-01 Applied Materials, Inc. Process kit for improving edge film thickness uniformity on a substrate
US20210287881A1 (en) * 2020-03-12 2021-09-16 Applied Materials, Inc. Methods and apparatus for tuning semiconductor processes
CN111370287B (zh) * 2020-03-24 2025-06-10 长江存储科技有限责任公司 一种上电极设备以及等离子体处理装置
US20220049355A1 (en) * 2020-08-14 2022-02-17 Changxin Memory Technologies, Inc. Spray head, chemical vapor deposition device, and working method of chemical vapor deposition device
KR102793905B1 (ko) 2020-08-14 2025-04-08 삼성전자주식회사 상부 전극 및 이를 포함하는 기판 처리 장치
US20250029849A1 (en) * 2023-07-18 2025-01-23 Applied Materials, Inc. Shaped faceplate for extreme edge film uniformity

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW469534B (en) * 1999-02-23 2001-12-21 Matsushita Electric Industrial Co Ltd Plasma processing method and apparatus
US6740367B2 (en) * 1999-03-18 2004-05-25 Asm Japan K.K. Plasma CVD film-forming device
TW200414831A (en) * 2002-09-04 2004-08-01 Applied Materials Inc Capacitively coupled plasma reactor with uniform radial distribution of plasma
TW200522801A (en) * 2003-09-04 2005-07-01 Tokyo Electron Ltd Plasma processing device

Family Cites Families (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US650253A (en) * 1899-11-23 1900-05-22 Henry Keller Thresher.
US3830194A (en) 1972-09-28 1974-08-20 Applied Materials Tech Susceptor support structure and docking assembly
US4455467A (en) 1981-09-21 1984-06-19 General Electric Company Metal rack for microwave oven
US4522149A (en) 1983-11-21 1985-06-11 General Instrument Corp. Reactor and susceptor for chemical vapor deposition process
US4809421A (en) 1984-01-16 1989-03-07 Precision Brand Products, Inc. Slotted shim
US5000113A (en) 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
JPS644481A (en) * 1987-06-24 1989-01-09 Minoru Sugawara Parallel-plate discharge electrode
US4927991A (en) 1987-11-10 1990-05-22 The Pillsbury Company Susceptor in combination with grid for microwave oven package
US5044943A (en) 1990-08-16 1991-09-03 Applied Materials, Inc. Spoked susceptor support for enhanced thermal uniformity of susceptor in semiconductor wafer processing apparatus
US5173580A (en) 1990-11-15 1992-12-22 The Pillsbury Company Susceptor with conductive border for heating foods in a microwave oven
US5820686A (en) 1993-01-21 1998-10-13 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
US5352294A (en) 1993-01-28 1994-10-04 White John M Alignment of a shadow frame and large flat substrates on a support
JP2662365B2 (ja) 1993-01-28 1997-10-08 アプライド マテリアルズ インコーポレイテッド 改良された排出システムを有する単一基板式の真空処理装置
US5421893A (en) 1993-02-26 1995-06-06 Applied Materials, Inc. Susceptor drive and wafer displacement mechanism
US5439524A (en) 1993-04-05 1995-08-08 Vlsi Technology, Inc. Plasma processing apparatus
US5332443A (en) 1993-06-09 1994-07-26 Applied Materials, Inc. Lift fingers for substrate processing apparatus
US5614055A (en) * 1993-08-27 1997-03-25 Applied Materials, Inc. High density plasma CVD and etching reactor
US5628869A (en) 1994-05-09 1997-05-13 Lsi Logic Corporation Plasma enhanced chemical vapor reactor with shaped electrodes
WO1997009737A1 (en) 1995-09-01 1997-03-13 Advanced Semiconductor Materials America, Inc. Wafer support system
JPH09306896A (ja) * 1996-03-15 1997-11-28 Sumitomo Metal Ind Ltd プラズマ処理装置およびプラズマ処理方法
US5844205A (en) 1996-04-19 1998-12-01 Applied Komatsu Technology, Inc. Heated substrate support structure
US5819434A (en) 1996-04-25 1998-10-13 Applied Materials, Inc. Etch enhancement using an improved gas distribution plate
KR100252210B1 (ko) * 1996-12-24 2000-04-15 윤종용 반도체장치 제조용 건식식각장치
US5981899A (en) 1997-01-17 1999-11-09 Balzers Aktiengesellschaft Capacitively coupled RF-plasma reactor
ATE267890T1 (de) 1997-06-13 2004-06-15 Unaxis Trading Ag Verfahren zur herstellung von werkstücken, die mit einer epitaktischen schicht beschichtet sind
US20020011215A1 (en) 1997-12-12 2002-01-31 Goushu Tei Plasma treatment apparatus and method of manufacturing optical parts using the same
KR100279963B1 (ko) 1997-12-30 2001-04-02 윤종용 반도체소자제조용가스디퓨져및이를설치한반응로
AU2186099A (en) 1998-02-09 1999-08-23 Nikon Corporation Apparatus for supporting base plate, apparatus and method for transferring base plate, method of replacing base plate, and exposure apparatus and method of manufacturing the same
GB9808825D0 (en) 1998-04-24 1998-06-24 Nimbus Communications Int Ltd A disk recording system and a method of controlling the rotation of a turntable in such a disk recording system
US6182603B1 (en) 1998-07-13 2001-02-06 Applied Komatsu Technology, Inc. Surface-treated shower head for use in a substrate processing chamber
US6619131B2 (en) 1998-07-16 2003-09-16 Unaxis Balzers Ag Combination pressure sensor with capacitive and thermal elements
WO2000019483A1 (de) 1998-09-30 2000-04-06 Unaxis Balzers Aktiengesellschaft Vakuumbehandlungskammer und verfahren zur oberflächenbehandlung
JP3417328B2 (ja) * 1999-02-23 2003-06-16 松下電器産業株式会社 プラズマ処理方法及び装置
US6344420B1 (en) 1999-03-15 2002-02-05 Kabushiki Kaisha Toshiba Plasma processing method and plasma processing apparatus
US6228438B1 (en) 1999-08-10 2001-05-08 Unakis Balzers Aktiengesellschaft Plasma reactor for the treatment of large size substrates
US6149365A (en) 1999-09-21 2000-11-21 Applied Komatsu Technology, Inc. Support frame for substrates
US6961490B2 (en) 2000-01-27 2005-11-01 Unaxis-Balzers Aktiengesellschaft Waveguide plate and process for its production and microtitre plate
US6510263B1 (en) 2000-01-27 2003-01-21 Unaxis Balzers Aktiengesellschaft Waveguide plate and process for its production and microtitre plate
US6502530B1 (en) 2000-04-26 2003-01-07 Unaxis Balzers Aktiengesellschaft Design of gas injection for the electrode in a capacitively coupled RF plasma reactor
US6383573B1 (en) 2000-05-17 2002-05-07 Unaxis Balzers Aktiengesellschaft Process for manufacturing coated plastic body
KR100332314B1 (ko) 2000-06-24 2002-04-12 서성기 박막증착용 반응용기
US6447980B1 (en) 2000-07-19 2002-09-10 Clariant Finance (Bvi) Limited Photoresist composition for deep UV and process thereof
US6916407B2 (en) 2000-11-27 2005-07-12 Unaxis Trading Ag Target comprising thickness profiling for an RF magnetron
US6962732B2 (en) 2001-08-23 2005-11-08 Applied Materials, Inc. Process for controlling thin film uniformity and products produced thereby
US6793733B2 (en) * 2002-01-25 2004-09-21 Applied Materials Inc. Gas distribution showerhead
JP3872363B2 (ja) 2002-03-12 2007-01-24 京セラ株式会社 Ｃａｔ−ＰＥＣＶＤ法
JP4044368B2 (ja) * 2002-05-22 2008-02-06 松下電器産業株式会社 プラズマ処理方法及び装置
US7270713B2 (en) 2003-01-07 2007-09-18 Applied Materials, Inc. Tunable gas distribution plate assembly
US7083702B2 (en) 2003-06-12 2006-08-01 Applied Materials, Inc. RF current return path for a large area substrate plasma reactor
ATE364897T1 (de) 2003-09-10 2007-07-15 Oc Oerlikon Balzers Ag Spannungsungleichförmigkeits- kompensationsverfahren für einen hochfrequenz- plasmareaktor zur behandlung rechteckiger grossflächiger substrate
US8074599B2 (en) * 2004-05-12 2011-12-13 Applied Materials, Inc. Plasma uniformity control by gas diffuser curvature
US20060005771A1 (en) 2004-07-12 2006-01-12 Applied Materials, Inc. Apparatus and method of shaping profiles of large-area PECVD electrodes
US7429410B2 (en) 2004-09-20 2008-09-30 Applied Materials, Inc. Diffuser gravity support
KR20070089533A (ko) 2006-02-28 2007-08-31 삼성전자주식회사 플라즈마 처리설비
JP2011071544A (ja) * 2010-12-06 2011-04-07 Ulvac Japan Ltd プラズマ処理方法及び装置並びにプラズマｃｖｄ方法及び装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW469534B (en) * 1999-02-23 2001-12-21 Matsushita Electric Industrial Co Ltd Plasma processing method and apparatus
US6740367B2 (en) * 1999-03-18 2004-05-25 Asm Japan K.K. Plasma CVD film-forming device
TW200414831A (en) * 2002-09-04 2004-08-01 Applied Materials Inc Capacitively coupled plasma reactor with uniform radial distribution of plasma
TW200522801A (en) * 2003-09-04 2005-07-01 Tokyo Electron Ltd Plasma processing device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI844050B (zh) * 2021-07-09 2024-06-01 美商應用材料股份有限公司 半導體處理腔室及處理基板的方法
US12338530B2 (en) 2021-07-09 2025-06-24 Applied Materials, Inc. Shaped showerhead for edge plasma modulation

Also Published As

Publication number Publication date
WO2009134588A3 (en) 2010-03-18
JP2011518959A (ja) 2011-06-30
US20090269512A1 (en) 2009-10-29
CN102017813A (zh) 2011-04-13
KR20100135967A (ko) 2010-12-27
TW201008398A (en) 2010-02-16
US8097082B2 (en) 2012-01-17
WO2009134588A2 (en) 2009-11-05
JP5073097B2 (ja) 2012-11-14

Similar Documents

Publication Publication Date Title
TWI395517B (zh) 電漿處理腔室之非平面面板
JP7393501B2 (ja) 前駆体の流れを改善する半導体処理チャンバ
KR102343829B1 (ko) 이중 매립 전극들을 갖는 기판 지지부
KR102697450B1 (ko) 기판 처리 장치와 방법, 그 처리 방법을 이용한 반도체 소자 제조방법
CN101689492B (zh) 处理基板边缘区域的装置与方法
KR101495288B1 (ko) 기판 처리 장치 및 방법
US20140138030A1 (en) Capacitively coupled plasma equipment with uniform plasma density
US20160079039A1 (en) Dual Plasma Volume Processing Apparatus for Neutral/Ion Flux Control
TWI502619B (zh) 用於電漿處理設備之電極、電漿處理設備、以及使用電漿處理設備產生電漿的方法
TW201921580A (zh) 具有冷卻和傳導銷的基板支撐件
TW201522696A (zh) 使用遠端電漿ｃｖｄ技術的低溫氮化矽膜
US11164724B2 (en) Seasoning process for establishing a stable process and extending chamber uptime for semiconductor chip processing
WO2014172112A1 (en) Capacitively coupled plasma equipment with uniform plasma density
CN116171486A (zh) 用于沉积和蚀刻的半导体处理腔室
TWI608517B (zh) 處理腔室與用於提供電漿至處理腔室的裝置
JP2008270833A (ja) プラズマドーピング方法及び装置
KR102083854B1 (ko) 기판 처리 장치 및 기판 처리 방법
KR20190138319A (ko) 경사면 에칭 프로파일 제어
TWI774308B (zh) 用於高頻處理的蓋堆疊
JP6406631B2 (ja) プラズマ処理装置
KR102072044B1 (ko) 기판 처리 장치
KR102421346B1 (ko) 플라즈마 장비
KR101171988B1 (ko) 플라즈마 처리장치
KR101878665B1 (ko) 기판 처리 방법
KR20170133671A (ko) 기판 처리 방법

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees