CN101996924A - 形成金属互连层的方法 - Google Patents
形成金属互连层的方法 Download PDFInfo
- Publication number
- CN101996924A CN101996924A CN2009100562563A CN200910056256A CN101996924A CN 101996924 A CN101996924 A CN 101996924A CN 2009100562563 A CN2009100562563 A CN 2009100562563A CN 200910056256 A CN200910056256 A CN 200910056256A CN 101996924 A CN101996924 A CN 101996924A
- Authority
- CN
- China
- Prior art keywords
- copper
- layer
- displacement
- metal
- reaction chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009100562563A CN101996924A (zh) | 2009-08-11 | 2009-08-11 | 形成金属互连层的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009100562563A CN101996924A (zh) | 2009-08-11 | 2009-08-11 | 形成金属互连层的方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN101996924A true CN101996924A (zh) | 2011-03-30 |
Family
ID=43786861
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009100562563A Pending CN101996924A (zh) | 2009-08-11 | 2009-08-11 | 形成金属互连层的方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN101996924A (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8673764B1 (en) | 2012-10-16 | 2014-03-18 | Semiconductor Manufacturing International Corp. | Method and system for making and cleaning semiconductor device |
CN109817515A (zh) * | 2017-11-22 | 2019-05-28 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的制造方法 |
-
2009
- 2009-08-11 CN CN2009100562563A patent/CN101996924A/zh active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8673764B1 (en) | 2012-10-16 | 2014-03-18 | Semiconductor Manufacturing International Corp. | Method and system for making and cleaning semiconductor device |
US9640425B2 (en) | 2012-10-16 | 2017-05-02 | Semiconductor Manufacturing International Corp. | System for making and cleaning semiconductor device |
CN109817515A (zh) * | 2017-11-22 | 2019-05-28 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的制造方法 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8574418B2 (en) | Electroplating method for coating a substrate surface with a metal | |
CN101263247B (zh) | 用于使用金属涂布基底表面的电镀组合物 | |
CN100378954C (zh) | 半导体元件及制造铜导线的方法 | |
US7405157B1 (en) | Methods for the electrochemical deposition of copper onto a barrier layer of a work piece | |
CN101743639B (zh) | 用于半导体部件的接触结构及其制造方法 | |
US6294467B1 (en) | Process for forming fine wiring | |
US8058164B2 (en) | Methods of fabricating electronic devices using direct copper plating | |
CN101016638A (zh) | 用于在非铜可镀层上直接电镀铜的方法 | |
WO2009101805A1 (ja) | 半導体装置及びその製造方法 | |
TW201602423A (zh) | 超共形鍍覆 | |
EP1778896A1 (en) | Method of barrier layer surface treatment to enable direct copper plating on barrier metal | |
CN102365751A (zh) | 具有金属触点的硅太阳能电池 | |
TW200918690A (en) | Fabricating a contact rhodium structure by electroplating and electroplating composition | |
CN103109365B (zh) | 微观特征中的种子层沉积 | |
Kim et al. | Effect of chemical composition on adhesion of directly electrodeposited copper film on TiN | |
CN101996924A (zh) | 形成金属互连层的方法 | |
CN101989568A (zh) | 形成金属互连层的方法 | |
JP7402981B2 (ja) | 構造体及び構造体の製造方法 | |
KR20000035623A (ko) | 전도성 구조체 및 반도체 디바이스의 제조 방법 | |
CN112831821A (zh) | 晶圆的电镀装置及电镀方法 | |
KR20230085131A (ko) | 다마신 공정에서 구리 배리어층의 전해질 및 증착 | |
US7597787B2 (en) | Methods and apparatuses for electrochemical deposition | |
KR20140144665A (ko) | 높은 시트 저항을 갖는 소재 상의 전기화학적 증착 | |
US6511609B2 (en) | Cu seed layer deposition for ULSI metalization | |
KR102178158B1 (ko) | 관통공이 매립된 Si 기판의 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20121116 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20121116 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant after: Semiconductor Manufacturing International (Shanghai) Corporation Applicant after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
C12 | Rejection of a patent application after its publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20110330 |