CN101989552A - CoolMOS的纵向区的制造方法 - Google Patents
CoolMOS的纵向区的制造方法 Download PDFInfo
- Publication number
- CN101989552A CN101989552A CN2009100577319A CN200910057731A CN101989552A CN 101989552 A CN101989552 A CN 101989552A CN 2009100577319 A CN2009100577319 A CN 2009100577319A CN 200910057731 A CN200910057731 A CN 200910057731A CN 101989552 A CN101989552 A CN 101989552A
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- CN
- China
- Prior art keywords
- coolmos
- monocrystalline silicon
- type
- silicon
- epitaxial loayer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 43
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 33
- 229920005591 polysilicon Polymers 0.000 claims description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 27
- 229910052710 silicon Inorganic materials 0.000 claims description 27
- 239000010703 silicon Substances 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 7
- 238000000407 epitaxy Methods 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 2
- 239000011148 porous material Substances 0.000 abstract 2
- 238000005516 engineering process Methods 0.000 description 9
- 238000007789 sealing Methods 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 238000000227 grinding Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN2009100577319A CN101989552B (zh) | 2009-08-07 | 2009-08-07 | 超级结mos管的纵向区的制造方法 |
Applications Claiming Priority (1)
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CN2009100577319A CN101989552B (zh) | 2009-08-07 | 2009-08-07 | 超级结mos管的纵向区的制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN101989552A true CN101989552A (zh) | 2011-03-23 |
CN101989552B CN101989552B (zh) | 2012-06-20 |
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CN2009100577319A Active CN101989552B (zh) | 2009-08-07 | 2009-08-07 | 超级结mos管的纵向区的制造方法 |
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CN (1) | CN101989552B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103035528A (zh) * | 2012-05-23 | 2013-04-10 | 上海华虹Nec电子有限公司 | 超级结制备工艺方法 |
CN103050384A (zh) * | 2012-08-20 | 2013-04-17 | 上海华虹Nec电子有限公司 | 一种用于超级结制备的深沟槽填充工艺方法 |
CN103578999A (zh) * | 2012-08-01 | 2014-02-12 | 上海华虹Nec电子有限公司 | 一种超级结的制备工艺方法 |
CN103879950A (zh) * | 2012-12-19 | 2014-06-25 | 微机电科技香港有限公司 | Mems器件真空封装结构 |
CN112018076A (zh) * | 2020-07-28 | 2020-12-01 | 中国科学院微电子研究所 | 一种半导体结构及其制备方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1630863B1 (en) * | 2004-08-31 | 2014-05-14 | Infineon Technologies AG | Method of fabricating a monolithically integrated vertical semiconducting device in an soi substrate |
CN101431057B (zh) * | 2008-12-11 | 2010-11-17 | 电子科技大学 | 一种两次刻蚀单层多晶硅的高功率bcd工艺 |
-
2009
- 2009-08-07 CN CN2009100577319A patent/CN101989552B/zh active Active
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103035528A (zh) * | 2012-05-23 | 2013-04-10 | 上海华虹Nec电子有限公司 | 超级结制备工艺方法 |
CN103035528B (zh) * | 2012-05-23 | 2015-08-19 | 上海华虹宏力半导体制造有限公司 | 超级结制备工艺方法 |
CN103578999A (zh) * | 2012-08-01 | 2014-02-12 | 上海华虹Nec电子有限公司 | 一种超级结的制备工艺方法 |
CN103050384A (zh) * | 2012-08-20 | 2013-04-17 | 上海华虹Nec电子有限公司 | 一种用于超级结制备的深沟槽填充工艺方法 |
CN103879950A (zh) * | 2012-12-19 | 2014-06-25 | 微机电科技香港有限公司 | Mems器件真空封装结构 |
CN103879950B (zh) * | 2012-12-19 | 2016-01-20 | 上海矽睿科技有限公司 | Mems器件真空封装结构 |
CN112018076A (zh) * | 2020-07-28 | 2020-12-01 | 中国科学院微电子研究所 | 一种半导体结构及其制备方法 |
Also Published As
Publication number | Publication date |
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CN101989552B (zh) | 2012-06-20 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140108 |
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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TR01 | Transfer of patent right |
Effective date of registration: 20140108 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |