CN101983413A - 离子注入装置、离子注入方法及程序 - Google Patents
离子注入装置、离子注入方法及程序 Download PDFInfo
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- CN101983413A CN101983413A CN200980112060XA CN200980112060A CN101983413A CN 101983413 A CN101983413 A CN 101983413A CN 200980112060X A CN200980112060X A CN 200980112060XA CN 200980112060 A CN200980112060 A CN 200980112060A CN 101983413 A CN101983413 A CN 101983413A
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- ion beam
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- 238000000034 method Methods 0.000 title claims description 92
- 238000005468 ion implantation Methods 0.000 title claims description 42
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 240
- 238000009826 distribution Methods 0.000 claims abstract description 207
- 230000005684 electric field Effects 0.000 claims abstract description 150
- 239000000758 substrate Substances 0.000 claims description 69
- 239000004744 fabric Substances 0.000 claims description 43
- 239000000470 constituent Substances 0.000 claims description 34
- 238000004364 calculation method Methods 0.000 claims description 29
- 230000008569 process Effects 0.000 claims description 29
- 238000002347 injection Methods 0.000 claims description 23
- 239000007924 injection Substances 0.000 claims description 23
- 230000008901 benefit Effects 0.000 claims description 16
- 238000004088 simulation Methods 0.000 claims description 10
- 238000007493 shaping process Methods 0.000 claims description 7
- 230000001105 regulatory effect Effects 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 description 79
- 239000002245 particle Substances 0.000 description 21
- 238000000926 separation method Methods 0.000 description 19
- 239000000463 material Substances 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 5
- 238000011144 upstream manufacturing Methods 0.000 description 5
- 238000005452 bending Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000013528 artificial neural network Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 230000002068 genetic effect Effects 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000005405 multipole Effects 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 208000019901 Anxiety disease Diseases 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000036506 anxiety Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000009342 intercropping Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- SZVJSHCCFOBDDC-UHFFFAOYSA-N iron(II,III) oxide Inorganic materials O=[Fe]O[Fe]O[Fe]=O SZVJSHCCFOBDDC-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000010626 work up procedure Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/10—Lenses
- H01J37/12—Lenses electrostatic
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/08—Deviation, concentration or focusing of the beam by electric or magnetic means
- G21K1/093—Deviation, concentration or focusing of the beam by electric or magnetic means by magnetic means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/045—Diaphragms
- H01J2237/0451—Diaphragms with fixed aperture
- H01J2237/0453—Diaphragms with fixed aperture multiple apertures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30433—System calibration
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Physical Vapour Deposition (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
Description
Claims (7)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008093677A JP4365441B2 (ja) | 2008-03-31 | 2008-03-31 | イオン注入装置、イオン注入方法及びプログラム |
JP093677/2008 | 2008-03-31 | ||
PCT/JP2009/055796 WO2009122964A1 (ja) | 2008-03-31 | 2009-03-24 | イオン注入装置、イオン注入方法及びプログラム |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101983413A true CN101983413A (zh) | 2011-03-02 |
CN101983413B CN101983413B (zh) | 2012-11-07 |
Family
ID=41135344
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200980112060XA Active CN101983413B (zh) | 2008-03-31 | 2009-03-24 | 离子注入装置、离子注入方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8455837B2 (zh) |
JP (1) | JP4365441B2 (zh) |
KR (1) | KR101115649B1 (zh) |
CN (1) | CN101983413B (zh) |
TW (1) | TWI469189B (zh) |
WO (1) | WO2009122964A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104851770A (zh) * | 2014-02-13 | 2015-08-19 | 上海和辉光电有限公司 | 一种测定离子束流平行度的装置和方法 |
CN111739777A (zh) * | 2019-03-25 | 2020-10-02 | 日新离子机器株式会社 | 离子束照射装置和存储离子束照射装置用程序的存储介质 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5226577B2 (ja) * | 2009-03-27 | 2013-07-03 | 三井造船株式会社 | イオン注入装置及びイオンビームの調整方法 |
US9147554B2 (en) | 2009-07-02 | 2015-09-29 | Axcelis Technologies, Inc. | Use of beam scanning to improve uniformity and productivity of a 2D mechanical scan implantation system |
TW201133536A (en) * | 2010-03-16 | 2011-10-01 | Kingstone Semiconductor Co Ltd | Ions injection system and method |
US8421039B2 (en) * | 2011-03-31 | 2013-04-16 | Axcelis Technologies, Inc. | Method and apparatus for improved uniformity control with dynamic beam shaping |
JP6469682B2 (ja) | 2013-12-20 | 2019-02-13 | アール. ホワイト ニコラス | 任意の長さのリボン状ビームイオン源 |
JP6177123B2 (ja) * | 2013-12-25 | 2017-08-09 | 住友重機械イオンテクノロジー株式会社 | 支持構造およびそれを用いたイオン発生装置 |
US20170005013A1 (en) * | 2015-06-30 | 2017-01-05 | Varian Semiconductor Equipment Associates, Inc. | Workpiece Processing Technique |
KR102123965B1 (ko) * | 2018-12-27 | 2020-06-17 | 주식회사 다원시스 | 하전입자 측정 장치 |
WO2022244149A1 (ja) * | 2021-05-19 | 2022-11-24 | 株式会社日立ハイテク | イオンミリング装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2665819B2 (ja) * | 1989-08-17 | 1997-10-22 | 日新電機株式会社 | イオン注入装置 |
US5350926A (en) | 1993-03-11 | 1994-09-27 | Diamond Semiconductor Group, Inc. | Compact high current broad beam ion implanter |
US5834786A (en) | 1996-07-15 | 1998-11-10 | Diamond Semiconductor Group, Inc. | High current ribbon beam ion implanter |
JP3716711B2 (ja) * | 2000-06-16 | 2005-11-16 | 日新電機株式会社 | イオン照射装置におけるイオン成分比の計測方法 |
KR100444201B1 (ko) * | 2002-04-18 | 2004-08-16 | 삼성전자주식회사 | 이온빔 경사각 측정방법 및 장치 |
US6933507B2 (en) * | 2002-07-17 | 2005-08-23 | Kenneth H. Purser | Controlling the characteristics of implanter ion-beams |
US7078714B2 (en) | 2004-05-14 | 2006-07-18 | Nissin Ion Equipment Co., Ltd. | Ion implanting apparatus |
US7326941B2 (en) * | 2004-05-18 | 2008-02-05 | Advanced Ion Beam Technology, Inc. | Apparatus and methods for ion beam implantation using ribbon and spot beams |
JP2006004676A (ja) | 2004-06-15 | 2006-01-05 | Nicholas R White | 連続イオンビームの電流の均一性を調整し制御する電磁制御体 |
JP4882456B2 (ja) | 2006-03-31 | 2012-02-22 | 株式会社Ihi | イオン注入装置 |
JP4179337B2 (ja) * | 2006-05-17 | 2008-11-12 | 日新イオン機器株式会社 | イオン源およびその運転方法 |
WO2008115339A1 (en) * | 2007-03-15 | 2008-09-25 | White Nicholas R | Open-ended electromagnetic corrector assembly and method for deflecting, focusing, and controlling the uniformity of a traveling ion beam |
US8071964B2 (en) * | 2008-05-01 | 2011-12-06 | Axcelis Technologies, Inc. | System and method of performing uniform dose implantation under adverse conditions |
-
2008
- 2008-03-31 JP JP2008093677A patent/JP4365441B2/ja active Active
-
2009
- 2009-03-24 KR KR1020107019573A patent/KR101115649B1/ko active IP Right Grant
- 2009-03-24 US US12/935,781 patent/US8455837B2/en active Active
- 2009-03-24 CN CN200980112060XA patent/CN101983413B/zh active Active
- 2009-03-24 WO PCT/JP2009/055796 patent/WO2009122964A1/ja active Application Filing
- 2009-03-31 TW TW98110741A patent/TWI469189B/zh active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104851770A (zh) * | 2014-02-13 | 2015-08-19 | 上海和辉光电有限公司 | 一种测定离子束流平行度的装置和方法 |
CN111739777A (zh) * | 2019-03-25 | 2020-10-02 | 日新离子机器株式会社 | 离子束照射装置和存储离子束照射装置用程序的存储介质 |
CN111739777B (zh) * | 2019-03-25 | 2023-10-31 | 日新离子机器株式会社 | 离子束照射装置和存储离子束照射装置用程序的存储介质 |
Also Published As
Publication number | Publication date |
---|---|
KR20100117646A (ko) | 2010-11-03 |
US8455837B2 (en) | 2013-06-04 |
US20110029117A1 (en) | 2011-02-03 |
KR101115649B1 (ko) | 2012-02-16 |
JP4365441B2 (ja) | 2009-11-18 |
TW200949914A (en) | 2009-12-01 |
CN101983413B (zh) | 2012-11-07 |
JP2009245880A (ja) | 2009-10-22 |
WO2009122964A1 (ja) | 2009-10-08 |
TWI469189B (zh) | 2015-01-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: MITSUI ENGINEERING & SHIPBUILDING Co.,Ltd. Address before: Tokyo, Japan Patentee before: MITSUI ENGINEERING & SHIPBUILDING Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20181218 Address after: Postal code 104-8439, No. 6 Fan 4, 5 Dingmu, Tsukiji, Central District, Tokyo, Japan Patentee after: MITSUI ENGINEERING & SHIPBUILDING Co.,Ltd. Address before: Tokyo, Japan Patentee before: MITSUI ENGINEERING & SHIPBUILDING Co.,Ltd. |
|
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: Postal code 104-8439, No. 6 Fan 4, 5 Dingmu, Tsukiji, Central District, Tokyo, Japan Patentee after: Mitsui Yiaisi Co.,Ltd. Address before: Postal code 104-8439, No. 6 Fan 4, 5 Dingmu, Tsukiji, Central District, Tokyo, Japan Patentee before: MITSUI ENGINEERING & SHIPBUILDING Co.,Ltd. |