CN101976094A - Precise current generating circuit - Google Patents

Precise current generating circuit Download PDF

Info

Publication number
CN101976094A
CN101976094A CN 201010552094 CN201010552094A CN101976094A CN 101976094 A CN101976094 A CN 101976094A CN 201010552094 CN201010552094 CN 201010552094 CN 201010552094 A CN201010552094 A CN 201010552094A CN 101976094 A CN101976094 A CN 101976094A
Authority
CN
China
Prior art keywords
current
grid
circuit
generating circuit
electric current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN 201010552094
Other languages
Chinese (zh)
Other versions
CN101976094B (en
Inventor
蒋仁杰
陈怒兴
陈宝民
石大勇
李俊丰
谭晓强
郭斌
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Changsha Jingjia Microelectronic Co., Ltd.
Original Assignee
CHANGSHA JINGJIA MICROELECTRONICS Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHANGSHA JINGJIA MICROELECTRONICS Co Ltd filed Critical CHANGSHA JINGJIA MICROELECTRONICS Co Ltd
Priority to CN2010105520945A priority Critical patent/CN101976094B/en
Publication of CN101976094A publication Critical patent/CN101976094A/en
Application granted granted Critical
Publication of CN101976094B publication Critical patent/CN101976094B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Control Of Electrical Variables (AREA)
  • Amplifiers (AREA)

Abstract

The invention discloses a precise 1/beta-times current generating circuit. The circuit has the following advantages: the cascade current mirror structure is adopted and the output impedance of the cascade current mirror structure is enhanced, thus improving the stability of the current; the load adopts self-bias form, thus reducing the overhead of the circuit; and the output current Iout is precisely equal to 1/beta times input current Iin by utilizing the good current characteristic of the triode.

Description

A kind of precise current produces circuit
Technical field
The present invention relates generally to the design field of current amplifier, refers in particular to a kind of accurate
Figure 2010105520945100002DEST_PATH_IMAGE001
Times current generating circuit.
Background technology
In present analog cmos integrated circuit (IC) design, there are a lot of places to need the precise current biasing, for example A/D, D/A converter, all kinds of digital-to-analogue are mixed IC.Generally all be by certain reference current is amplified, to obtain the reference current that we need, certainly, this enlargement factor differs, and to establish a capital be greater than one, and a lot of places require this enlargement factor to be less than one, or amplify based on certain parameter, particularly in band-gap reference, in order to carry out the second-order temperature compensation, need usually to adopt some current compensation modes, and this offset current all is its reference current usually
Figure 2010105520945100002DEST_PATH_IMAGE002
Doubly, herein
Figure 2010105520945100002DEST_PATH_IMAGE003
Be meant the current amplification factor of triode,
Figure 2010105520945100002DEST_PATH_IMAGE004
Be integer, as long as therefore can accurately produce more than or equal to one
Figure 103209DEST_PATH_IMAGE001
Times electric current just can be easy to obtain
Figure 261658DEST_PATH_IMAGE002
Times electric current because integer is amplified by electric current just can be realized by simple current mirror therefore how to produce accurately
Figure 707683DEST_PATH_IMAGE001
Focus and difficult point that times electric current has become us to pay close attention to.
Summary of the invention
The problem to be solved in the present invention just is: at the technical matters that prior art exists, provide a kind of and the complete compatibility of CMOS, accurate
Figure 900767DEST_PATH_IMAGE001
Times current generating circuit.
The solution that the present invention proposes is: at first utilize the transistor base electric current
Figure 2010105520945100002DEST_PATH_IMAGE005
, collector current
Figure 2010105520945100002DEST_PATH_IMAGE006
And emitter current Between relation, promptly
Figure 2010105520945100002DEST_PATH_IMAGE008
, and
Figure 2010105520945100002DEST_PATH_IMAGE009
, wherein
Figure 226575DEST_PATH_IMAGE003
Be the current amplification factor of triode, with input current Inject the emitter of PNP pipe, just can obtain a unitary current
Figure 872320DEST_PATH_IMAGE005
, the combined high precision current mirror is realized the electric current plus and minus calculation then, thereby makes
Figure 2010105520945100002DEST_PATH_IMAGE011
, promptly produced accurate
Figure 184352DEST_PATH_IMAGE001
Times electric current.
Compared with prior art, advantage of the present invention just is:
1, excellent performance: the present invention is by utilizing the triode good current, and adopts high-precision common-source common-gate current mirror to realize accurate circuit computing, thereby obtains accurate
Figure 169626DEST_PATH_IMAGE001
Times electric current;
2, simple in structure: the circuit structure that proposes among the present invention adopts the automatic biasing form, and biasing circuit that need not be extra has reduced design cost;
3, applied range: the present invention be owing to can provide the high electric current of precision and compatible fully with common CMOS technology, need not extra processing step and realizes compatibility to particular device, so range of application is wider.
Description of drawings
Fig. 1 is a circuit theory synoptic diagram of the present invention.
Embodiment
Below with reference to accompanying drawing and concrete enforcement the present invention is described in further details.
As shown in Figure 1, the present invention is a kind of accurate
Figure 479385DEST_PATH_IMAGE001
Times current generating circuit, this circuit are managed M1 ~ M6, NMOS pipe M7 ~ M10, resistance R and PNP pipe Q1 by PMOS and are formed, M1 ~ M6 and resistance R composition common-source common-gate current mirror wherein, and the electric current of establishing by resistance is
Figure 2010105520945100002DEST_PATH_IMAGE012
, by the electric current of M1, M4 branch road be
Figure 2010105520945100002DEST_PATH_IMAGE013
, and by the electric current of M3, M6 branch road be
Figure 2010105520945100002DEST_PATH_IMAGE014
, can get according to the current mirror principle,
Figure 2010105520945100002DEST_PATH_IMAGE015
（1）
The electric current that then flows into the Q1 emitter is
Figure 2010105520945100002DEST_PATH_IMAGE016
M9 is identical with the gate source voltage of M10, so it is also identical with the electric current of M10 by M9, consider of the influence of raceway groove mudulation effect to the metal-oxide-semiconductor electric current, add M7 and M8 and connected into the form of cascade respectively with M9 and M10, thereby make M9 accurately equate, thereby eliminated of the influence of raceway groove mudulation effect, promptly make accurately to equate with the electric current of M10 by M9 to the electric current of M9 and M10 with the M10 drain voltage.As shown in Figure 1, the electric current by M10 is the Q1 base current
Figure 816954DEST_PATH_IMAGE005
, then have
Figure 2010105520945100002DEST_PATH_IMAGE017
, according to PNP tube current characteristic,
Figure 2010105520945100002DEST_PATH_IMAGE018
（2）
Then have,
Figure 2010105520945100002DEST_PATH_IMAGE019
（3）
Because
Figure 994995DEST_PATH_IMAGE017
, simultaneous formula (1), formula (2), formula (3) can get,
Figure 2010105520945100002DEST_PATH_IMAGE020
（4）
Thereby realized accurate
Figure 897092DEST_PATH_IMAGE001
Times electric current.

Claims (1)

  1. One kind accurate 1/ βTimes current generating circuit, it is characterized in that: form by PMOS pipe (M1), (M2), (M3), (M4), (M5), (M6) and NMOS pipe (M7), (M8), (M9), (M10) and a PNP pipe (Q1) and resistance (R), (M1), the source electrode of (M2), (M3) connects power supply, grid links to each other with the drain electrode of (M5), drain electrode links to each other with the source electrode of (M4), (M5), (M6) respectively, form cascode structure, strengthen its output impedance; (M4), the drain electrode of the grid (M7) of (M5), (M6) and resistance (R) lower end link to each other; (M7) be connected with the cascade form respectively with (M10) with (M9) and (M8), (M7) grid links to each other with the grid of (M8) and emitter (Q1), (M9) grid links to each other input current with the grid of (M10) and base stage (Q1) I In Be connected to the emitter of (Q1), drain electrode (M6) is an output current I Out
CN2010105520945A 2010-11-19 2010-11-19 Precise current generating circuit Active CN101976094B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010105520945A CN101976094B (en) 2010-11-19 2010-11-19 Precise current generating circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2010105520945A CN101976094B (en) 2010-11-19 2010-11-19 Precise current generating circuit

Publications (2)

Publication Number Publication Date
CN101976094A true CN101976094A (en) 2011-02-16
CN101976094B CN101976094B (en) 2012-05-30

Family

ID=43575982

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010105520945A Active CN101976094B (en) 2010-11-19 2010-11-19 Precise current generating circuit

Country Status (1)

Country Link
CN (1) CN101976094B (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102437730A (en) * 2011-12-24 2012-05-02 西安启芯微电子有限公司 Anti-ringing circuit applied to high-voltage boosting type DC-DC (Direct Current to Direct Current) converter
CN105224005A (en) * 2015-10-23 2016-01-06 南京美辰微电子有限公司 Novel triode cascade current mirror
CN106170740A (en) * 2014-04-16 2016-11-30 高通股份有限公司 Bandgap current repeater
WO2017167096A1 (en) * 2016-03-28 2017-10-05 比亚迪股份有限公司 Negative voltage detection circuit

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2186141A (en) * 1986-01-30 1987-08-05 Plessey Co Plc Beta compensating current source circuit
JPH03156513A (en) * 1990-11-05 1991-07-04 Rohm Co Ltd Current inverting circuit
JPH0662531A (en) * 1992-08-03 1994-03-04 Sharp Corp Bandgap type constant current source circuit
CN101071312A (en) * 2006-05-12 2007-11-14 苏州中科集成电路设计中心有限公司 Common-source common-gate current mirror offset method and its bias circuit
CN101510106A (en) * 2008-02-15 2009-08-19 精拓科技股份有限公司 Electric current control device applying to transistor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2186141A (en) * 1986-01-30 1987-08-05 Plessey Co Plc Beta compensating current source circuit
JPH03156513A (en) * 1990-11-05 1991-07-04 Rohm Co Ltd Current inverting circuit
JPH0662531A (en) * 1992-08-03 1994-03-04 Sharp Corp Bandgap type constant current source circuit
CN101071312A (en) * 2006-05-12 2007-11-14 苏州中科集成电路设计中心有限公司 Common-source common-gate current mirror offset method and its bias circuit
CN101510106A (en) * 2008-02-15 2009-08-19 精拓科技股份有限公司 Electric current control device applying to transistor

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102437730A (en) * 2011-12-24 2012-05-02 西安启芯微电子有限公司 Anti-ringing circuit applied to high-voltage boosting type DC-DC (Direct Current to Direct Current) converter
CN102437730B (en) * 2011-12-24 2014-06-18 西安启芯微电子有限公司 Anti-ringing circuit applied to high-voltage boosting type DC-DC (Direct Current to Direct Current) converter
CN106170740A (en) * 2014-04-16 2016-11-30 高通股份有限公司 Bandgap current repeater
CN106170740B (en) * 2014-04-16 2018-03-16 高通股份有限公司 Bandgap current repeater
CN105224005A (en) * 2015-10-23 2016-01-06 南京美辰微电子有限公司 Novel triode cascade current mirror
WO2017167096A1 (en) * 2016-03-28 2017-10-05 比亚迪股份有限公司 Negative voltage detection circuit
CN107238743A (en) * 2016-03-28 2017-10-10 比亚迪股份有限公司 negative voltage detection circuit

Also Published As

Publication number Publication date
CN101976094B (en) 2012-05-30

Similar Documents

Publication Publication Date Title
CN101308391B (en) High precision low pressure difference linear voltage-stabilizing circuit
CN102073332B (en) Low temperature coefficient complementary metal oxide semiconductor (CMOS) band-gap reference circuit of output belt low drop-out linear voltage regulator
CN101930248B (en) Adjustable negative voltage reference circuit
CN108599728B (en) Error amplifier with current limiting and clamping functions
CN101561689B (en) Low voltage CMOS current source
CN207488871U (en) A kind of CMOS low pressure difference linear voltage regulators using novel buffer
CN101976095B (en) High-precision band-gap reference source circuit based on emitter current compensation
CN101916128B (en) Method and corresponding circuit for improving output power supply rejection ratio of band-gap reference source
CN104007777B (en) A kind of current source generator
CN202394144U (en) Low temperature offset CMOS band-gap reference voltage source with index temperature compensation function
CN102495659A (en) Exponential temperature compensation low-temperature drift complementary metal oxide semiconductor (CMOS) band-gap reference voltage source
CN101976094B (en) Precise current generating circuit
CN103283144A (en) Current mirror and high-ompliance single-stage amplifier
CN103414441B (en) The Open-loop amplifier of output common mode voltage stabilization
CN104216455A (en) Low-power-consumption reference voltage source circuit for 4G (4th Generation) communications chip
CN200983116Y (en) Standard circuit of MOS voltage
CN112994625A (en) Zero-temperature-drift variable-swing operational amplifier
JP2017011396A (en) Operational amplifier circuit
CN102043416B (en) Low dropout linear voltage regulator
CN105867499A (en) Circuit and method for achieving low pressure and high precision of reference voltage source
CN111384940B (en) High-linearity wide-swing CMOS voltage follower
CN109407747A (en) A kind of band-gap reference circuit of the high PSRR of second-order temperature compensation
CN104035479B (en) A kind of voltage-reference of high PSRR low noise
CN107395146B (en) Constant transconductance amplifier circuit
CN211089632U (en) High-linearity wide-swing CMOS voltage follower

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee
CP01 Change in the name or title of a patent holder

Address after: 410205 Hunan province Changsha Hexi Lugu high tech Zone base Lu Jing Road No. 2 Changsha Productivity Promotion Center

Patentee after: Changsha Jingjia Microelectronic Co., Ltd.

Address before: 410205 Hunan province Changsha Hexi Lugu high tech Zone base Lu Jing Road No. 2 Changsha Productivity Promotion Center

Patentee before: Changsha Jingjia Microelectronics Co., Ltd.