CN101969090A - Novel crystal curing process for liquid metal - Google Patents
Novel crystal curing process for liquid metal Download PDFInfo
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- CN101969090A CN101969090A CN 201010277344 CN201010277344A CN101969090A CN 101969090 A CN101969090 A CN 101969090A CN 201010277344 CN201010277344 CN 201010277344 CN 201010277344 A CN201010277344 A CN 201010277344A CN 101969090 A CN101969090 A CN 101969090A
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Abstract
The invention relates to a novel crystal curing process for liquid metal. The process comprises the following the steps of: preparing a capsulation base with a pit from metal or metal alloy first, heating liquid metal for melting, injecting a proper amount of liquid metal into the pit on the capsulation base, and simultaneously, heating the capsulation base to ensure that the liquid metal is in the liquid state; and putting an LED chip into the pit, so that a substrate layer of the chip contacts the liquid metal directly, and reducing the temperature of the capsulation base slowly to cure the liquid metal, so that the LED chip is fixed in the liquid metal. In the crystal curing process, the liquid metal with appropriate melting point replaces the conventional crystal curing material and is filled between the chip and the capsulation base, so the thermal conductivity is excellent, and the cured liquid metal plays an excellent crystal curing role; and the integral process is performed in the controlled safety environment due to the low melting point of the liquid metal.
Description
Technical field
The present invention relates to the solid brilliant technology of a kind of led chip, say it is a kind of solid brilliant technology of utilizing liquid metals heat transfer heat conduction definitely.
Background technology
Along with manifesting day by day of the energy and environmental problem, energy-conservation industry and products thereof more and more comes into one's own, the energy-saving effect of semiconductor diode (LED) illumination is generally acknowledged, but LED is such as heat radiation, application bottlenecks such as luminous intensity distribution are not also fully well solved, particularly heat dissipation problem is particularly outstanding, as everyone knows, led chip light efficiency and life-span and its junction temperature present must dependency relation, be that the low more light efficiency of junction temperature is high more, the corresponding life-span is also just long more, the key technology of control LED junction temperature is a heat radiation heat conduction technology, and its technological core is that the heat that earlier LED is sent effectively conducts to external heat sink fast, and heat is dispersed in the surrounding enviroment through external heat sink.Gu crystal technique is the key technology of LED encapsulation and radiating effect, Gu the quality of crystalloid amount will influence stability, radiating efficiency and the light extraction efficiency etc. of LED, different selected solid crystal type according to the size of LED power and packaging technology is different, in general, low-power LED crystal grain conducts heat by insulating cement fixed electrode pin and gets final product; The LED that power is big slightly can be by heat conduction elargol or silica gel adhesion heat radiation; Usually adopt the fixing heat radiation of mode of high heat conduction elargol or eutectic welding for watt level LED, the drawback of existing die-bonding method is that the conductive coefficient of crystal-bonding adhesive can not be comparable with metal, also have very big thermal resistance between crystal-bonding adhesive and led chip and metal heat sink, and the bonding solid crystal type of heat-conducting glue commonly used at present is owing to glue consumption, the problems such as uniformity and pull-out capacity of smearing often are wrapped in the part of LED crystal grain and influence light extraction efficiency in the crystal-bonding adhesive.
Summary of the invention
In order to overcome above-mentioned defective, the invention provides a kind of solid brilliant technology of utilizing liquid metals heat transfer heat conduction, contact the heat conduction of conducting heat by liquid metals and LED substrate layer are seamless.
The present invention for the technical scheme that solves its technical problem and adopt is:
The solid brilliant technology of a kind of new liquid metal, comprise following steps: the encapsulation base that at first has pit by the metal or metal alloy preparation, the liquid metals of heating makes its fusing, getting the appropriate amount of fluid metal injects on the encapsulation base in the pit, the encapsulation base of heating simultaneously makes liquid metals keep liquid, then led chip is placed pit that the chip substrate layer is directly contacted with liquid metals, slowly reduce the encapsulation base temperature liquid metals is solidified, so and with led chip be fixed in the liquid metals.
Described LED encapsulation base is made by high-thermal conductive metal or alloy material, generally selects copper, magnesium, aluminium or its alloy for use, and pit is set on the metal base, and the liquid liquid metals of coating is in order to fixed L ED chip in the pit.
Described liquid metals is that a kind of fusing point that refers to is no more than the metal or alloy of aluminium melt temperature, generally comprise caesium, gallium, rubidium, potassium, sodium, indium, lithium, tin, bismuth, thallium, zinc, antimony, magnesium, aluminium or its alloy, the liquid metals in wherein preferred 60 ℃ of-200 ℃ of scopes of fusing point.Temperature is controlled between 60-85 ℃ usually during the led chip operate as normal, temperature when the liquid metals fusing point should be higher than the led chip operate as normal, liquid metals keeps solid-state when being the LED operate as normal, for easy to operate and safety electronic device, the fusing point of liquid metals also should not be too high, generally is controlled in 200 ℃.
Described led chip is a large-power light-emitting diodes.
The invention has the beneficial effects as follows: adopt crystal-bonding adhesive to carry out solid crystalline substance in traditional LED packaging technology usually, the drawback of this method maximum is to fit between led chip and metal heat sink not tight, there is the gap between the two, usually add crystal-bonding adhesive to fill up gap and fixed chip, the conductive coefficient of existing crystal-bonding adhesive can not be comparable with metal, and also there is very big thermal resistance between crystal-bonding adhesive and led chip and metal heat sink, adopt the solid brilliant material of liquid metals replacement tradition of suitable fusing point to be filled between chip and the encapsulation base in this solid brilliant technology, not only has good thermal conductance, and the liquid metals that solidifies plays well solid brilliant effect, thereby effectively improve fit between led chip and metal heat sink in the conventional package technology not tight, defectives such as the crystal-bonding adhesive heat conductivility is not good, the heat that allows LED send conducts rapidly, effectively control the LED junction temperature, increase LED useful life and luminous efficiency, the fusing point that liquid metals is lower is in the controlled security context whole technical process to carry out; The present invention reduces solid area coverage to chip when brilliant, reduces the outgoing that hinders LED light because of solid covering when brilliant to greatest extent, and can play must reflection action for ganoid liquid metals simultaneously, and optical efficiency is got in increase.
Description of drawings:
Fig. 1: be process chart of the present invention;
Fig. 2～4: be the solid brilliant step schematic diagram of the present invention;
Indication legend in the accompanying drawing
1, encapsulation base 2, liquid metals 3, led chip 4, pit
Embodiment
Be illustrated in figure 1 as process chart of the present invention, the steps include:
1., the encapsulation base that at first has pit by the metal or metal alloy preparation;
2., the liquid metals of heating makes its fusing, the encapsulation base of heating simultaneously;
3., getting the appropriate amount of fluid metal injects on the encapsulation base in the pit and makes liquid metals keep liquid;
4., then led chip is placed pit that the chip substrate layer is directly contacted with liquid metals;
5., slowly reduce the encapsulation base temperature liquid metals is solidified, so and with led chip be fixed in the liquid metals.
As shown in Figure 2: LED encapsulation base 1 is made by high-thermal conductive metal or alloy material, generally selects for use copper, magnesium, aluminium or its alloy mold pressing or secondary machine to form, and pit 4 is set on the metal base, and the liquid liquid metals 2 of coating is in order to fixed L ED chip 3 in the pit.
As shown in Figure 3: get the appropriate amount of fluid metal and inject on the encapsulation base in the pit and make liquid metals keep liquid, must heat before this liquid metals and encapsulation base are in a liquid state liquid metals and are convenient to sampling and coating.
Liquid metals is that a kind of fusing point that refers to is no more than the metal or alloy of aluminium melt temperature, generally comprise caesium, gallium, rubidium, potassium, sodium, indium, lithium, tin, bismuth, thallium, zinc, antimony, magnesium, aluminium or its alloy, the liquid metals in wherein preferred 60 ℃ of-200 ℃ of scopes of fusing point.Temperature is controlled between 60-85 ℃ usually during the led chip operate as normal, temperature when the liquid metals fusing point should be higher than the led chip operate as normal, liquid metals keeps solid-state when being the LED operate as normal, for easy to operate and safety electronic device, the fusing point of liquid metals also should not be too high, generally is controlled in 200 ℃.
As shown in Figure 4: place pit that the chip substrate layer is directly contacted with liquid metals led chip, led chip is a large-power light-emitting diodes, slowly reduces the encapsulation base temperature liquid metals is solidified, and so and with led chip is fixed in the liquid metals.
Claims (4)
1. a new liquid metal is consolidated brilliant technology, it is characterized in that comprising following steps: the encapsulation base that at first has pit by the metal or metal alloy preparation, the liquid metals of heating makes its fusing, getting the appropriate amount of fluid metal injects on the encapsulation base in the pit, the encapsulation base of heating simultaneously makes liquid metals keep liquid, then led chip is placed pit that the chip substrate layer is directly contacted with liquid metals, slowly reduce the encapsulation base temperature liquid metals is solidified, so and with led chip be fixed in the liquid metals.
2. the solid brilliant technology of a kind of new liquid metal according to claim 1, it is characterized in that: described LED encapsulation base is made by high-thermal conductive metal or alloy material, and pit is set on the metal base.
3. the solid brilliant technology of a kind of new liquid metal according to claim 1, it is characterized in that: described liquid metals is that a kind of fusing point that refers to is no more than the metal or alloy of aluminium melt temperature, metal or alloy in wherein preferred 60 ℃ of-200 ℃ of scopes of fusing point.
4. the solid brilliant technology of a kind of new liquid metal according to claim 1 is characterized in that: temperature when described liquid metals fusing point should be higher than the led chip operate as normal, promptly liquid metals keeps solid-state during the LED operate as normal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010277344 CN101969090A (en) | 2010-09-03 | 2010-09-03 | Novel crystal curing process for liquid metal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010277344 CN101969090A (en) | 2010-09-03 | 2010-09-03 | Novel crystal curing process for liquid metal |
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| CN101969090A true CN101969090A (en) | 2011-02-09 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201010277344 Pending CN101969090A (en) | 2010-09-03 | 2010-09-03 | Novel crystal curing process for liquid metal |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105006515A (en) * | 2015-06-04 | 2015-10-28 | 佛山市南海区联合广东新光源产业创新中心 | LED chip heat dissipation structure |
| CN110102877A (en) * | 2019-05-07 | 2019-08-09 | 东莞市中镓半导体科技有限公司 | The laser lift-off device and method of liquid metal auxiliary heat conduction |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101170152A (en) * | 2006-10-26 | 2008-04-30 | 江苏稳润光电有限公司 | Heat radiation method for LED high-power tube wafer |
| CN101818888A (en) * | 2009-02-26 | 2010-09-01 | 连展科技（深圳）有限公司 | Irradiating block and light-emitting device |
-
2010
- 2010-09-03 CN CN 201010277344 patent/CN101969090A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101170152A (en) * | 2006-10-26 | 2008-04-30 | 江苏稳润光电有限公司 | Heat radiation method for LED high-power tube wafer |
| CN101818888A (en) * | 2009-02-26 | 2010-09-01 | 连展科技（深圳）有限公司 | Irradiating block and light-emitting device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105006515A (en) * | 2015-06-04 | 2015-10-28 | 佛山市南海区联合广东新光源产业创新中心 | LED chip heat dissipation structure |
| CN105006515B (en) * | 2015-06-04 | 2018-01-19 | 佛山市南海区联合广东新光源产业创新中心 | A kind of LED chip radiator structure |
| CN110102877A (en) * | 2019-05-07 | 2019-08-09 | 东莞市中镓半导体科技有限公司 | The laser lift-off device and method of liquid metal auxiliary heat conduction |
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Application publication date: 20110209 |