CN101924176B - Light-emitting diode packaging structure and packaging method thereof - Google Patents
Light-emitting diode packaging structure and packaging method thereof Download PDFInfo
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- CN101924176B CN101924176B CN2010102318881A CN201010231888A CN101924176B CN 101924176 B CN101924176 B CN 101924176B CN 2010102318881 A CN2010102318881 A CN 2010102318881A CN 201010231888 A CN201010231888 A CN 201010231888A CN 101924176 B CN101924176 B CN 101924176B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49109—Connecting at different heights outside the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
The invention relates to the field of optoelectronic packaging and discloses a light-emitting diode (LED) packaging structure and a packaging method thereof. The invention has the following beneficial effects: not passing through a ceramic insulating layer, an LED chip directly keeps away from the low heat conductivity bottleneck, and the heat can not be accumulated in the insulating layer; a metal heat conducting layer can rapidly transfer the heat generated by the LED chip to a metal substrate; the metal substrate has sufficient width and heat dissipation space; and a glass-ceramic insulating layer is manufactured on the metal heat conducting layer by selective laser melting and then a metal electrode layer and external electrodes are manufactured on the glass-ceramic insulating layer, thus not only ensuring insulation of the tube shell with the outside but also having little effect on the overall heat dissipation effect. The required ceramic insulating layer and the metal electrodelayer are formed by laser ablation melting, thus avoiding overall high temperature sintering, dispensing with the high temperature sintering process, saving energy, protecting the environment, enlarging the material types of the selectable metal substrate and being easy to realize industrialization.
Description
Technical field
The present invention relates to field of optoelectronic packaging, in particular a kind of package structure for LED and method for packing thereof.
Background technology
The shell structure of present Light-Emitting Diode mainly is that the paster type light emitting type chip is installed on the insulated substrate, then electrode is installed on the circuit on the insulated substrate, this mode is because the heat conductivility of the insulated substrate that directly contacts with the LED luminescence chip is very poor, become the bottleneck of heat radiation, particularly for great power LED, heat can't conduct fast, is deposited in the LED luminescence chip, causes performance and life-span to descend.
Be present main flow encapsulation mode such as the LED among Fig. 1, comprise epoxy resin layer 11, adopting surface mounted LED luminescence chip 12, metallic support 13.1), epoxy resin layer 11 heat conductivility extreme differences wherein adopting surface mounted LED luminescence chip two electrodes are connected on respectively on two metallic supports, exist subject matter to have:, the structure of clad type causes a large amount of heat to pile up in LED luminescence chip 12 fully; 2), according to the thermal resistance calculation formula, R=h/ λ * S (S is that logical hot side is long-pending, and h is the distance that type of thermal communication is crossed, and λ is thermal conductivity), the logical hot side of metallic support 13 is long-pending too small and length is excessive, the radiating effect that is difficult to play.
Therefore, prior art has yet to be improved and developed.
Summary of the invention
The technical problem to be solved in the present invention is, for the defects of prior art, provides a kind of package structure for LED and method for packing thereof, solves the paster type light emitting type heat dissipation problem.
The technical scheme that technical solution problem of the present invention adopts is as follows:
A kind of package structure for LED comprises a metal substrate, wherein, also is included in LED luminescence chip and first insulating barrier of fitting and arranging above the described metal substrate, and second insulating barrier of fitting and arranging below described metal substrate; And on described the first insulating barrier, be manufactured with metal electrode layer, and being used for drawing a wherein electrode that connects the LED luminescence chip, another electrode of described LED luminescence chip is connected with described metal substrate.
Described package structure for LED, wherein, be close on described metal substrate and between the described LED luminescence chip and be provided with the layer of metal heat-conducting layer, and the glass ceramics insulating barrier of described the first insulating barrier for adopting laser ablation melting method or low-temperature sintering method to make at described metal guide thermosphere.
Described package structure for LED, wherein, described metal substrate bottom is set to coarse bottom surface, and described the second insulating barrier is the ceramic insulating layer that adopts heat spraying method to make in the coarse bottom surface of described metal substrate bottom.
Described package structure for LED, wherein, the making material of described ceramic insulating layer is aluminium oxide, yittrium oxide, aluminium nitride, one or more combinations in the carborundum; The material of described metal guide thermosphere is silver.
Described package structure for LED, wherein, it also comprises the first external electrode and the second external electrode, described the first external electrode and the second external electrode are welded on respectively on described metal electrode layer and the described metal guide thermosphere by ultra-sonic welded or resistance welding method.
Described package structure for LED, wherein, described metal electrode layer is to fit by laser ablation methods melting and described glass ceramics insulating barrier to arrange.
Described package structure for LED, wherein, it also comprises the lens that are arranged on LED luminescence chip top, is used for encapsulating described LED luminescence chip.
A kind of LED encapsulation method wherein, may further comprise the steps:
A, with metal substrate bottom surface cleaning and carry out roughening and process, and adopt heat spraying method to make the second insulating barrier in the metal substrate bottom surface of processing through roughening;
B, positive applying of described metal substrate LED luminescence chip and the first insulating barrier are set,
C, on described the first insulating barrier, adopt the laser ablation melting method to make a metal electrode layer, and the first electrode and second electrode of described LED luminescence chip is connected on respectively on described metal substrate and the described metal electrode layer.
Described LED encapsulation method, wherein, described step B specifically may further comprise the steps:
B1, plate the layer of metal heat-conducting layer in described metal substrate front;
B2, fitting at described metal guide thermosphere arranges the LED luminescence chip, and to adopt the laser ablation melting method to make one deck glass ceramics insulating barrier at described metal guide thermosphere be described the first insulating barrier.
Described LED encapsulation method wherein, also comprises step after the described step C:
D, employing ultra-sonic welded or resistance welding method are welded on the first external electrode and the second external electrode respectively on described metal electrode layer and the described metal guide thermosphere, and described LED luminescence chip top makes the lens that are used for the packaged LED luminescence chip.
Adopt package structure for LED provided by the present invention and method for packing thereof, have following useful technique effect:
1), described led chip is without ceramic insulating layer, avoided the low heat conductivity bottleneck, heat can not piled up in insulating barrier;
2), metal guide thermosphere and metal substrate all have high thermal conductivity, the heat that can rapidly LED be produced imports in the metal substrate;
3), the width of metal substrate is enough large, and sufficient heat-dissipating space is arranged;
4), adopt the glass ceramics rete as insulating barrier, make again metal electrode layer and external electrode in the above, not only guaranteed insulating properties but also can save material;
5), simple in structure, can change according to demand the position of metal conducting layer and electrode layer, strong adaptability;
6) use, overleaf spraying method to make insulating barrier, not only guaranteed the insulating properties of substrate but also can not have much impact to the integral heat sink effect.
Description of drawings
Fig. 1 is the main flow encapsulation mode structural representation of prior art LED;
Fig. 2 is the package structure for LED schematic diagram that the embodiment of the invention 1 provides;
Fig. 3 is the package structure for LED schematic diagram that the embodiment of the invention 2 provides;
Fig. 4 is the LED encapsulation method flow chart that the embodiment of the invention provides.
Embodiment
Package structure for LED of the present invention and method for packing thereof, clearer, clear and definite for making purpose of the present invention, technical scheme and advantage, developing simultaneously referring to accompanying drawing, the present invention is described in more detail for embodiment.Should be appreciated that specific embodiment described herein only in order to explain the present invention, is not intended to limit the present invention.
A kind of package structure for LED that the embodiment of the invention 1 provides, as shown in Figure 2, comprise a metal substrate 301, it also is included in LED luminescence chip 306 and first insulating barrier 304 of fitting and arranging above the described metal substrate 301, and second insulating barrier 302 of fitting and arranging below described metal substrate 301.Wherein, described LED luminescence chip 306 is arranged on the top centre of described metal substrate 301.Wherein, the material of described metal substrate 301 can be copper, and aluminium or its alloy consider for cost and thermal conductivity, and aluminium is preferred plan.
Described the first insulating barrier 304 is the glass ceramics insulating barrier, forms in described metal substrate 301 making by adopting laser ablation melting method or low-temperature sintering method.Adopt the lf method can obtain very high pattern precision, be conducive to microminiaturization and the precision of product.
The material of described glass ceramics insulating barrier is mainly mixed by glassy phase, ceramic powders and organic carrier, and described ceramic powders accounts for 10~70%, described glassy phase accounts for 20~80%, all the other are described organic carrier.Described ceramic powders is alundum (Al2O3), aluminium nitride, zirconia, carborundum and/or diamond; Described glassy phase comprises MgO-BaO-Al
2O
3-SiO
2System glass, and contain B
2O
3, TiO
2, CaF
2, and/or ZrO
2Additive; Described organic carrier comprises terpinol and/or tributyl citrate at least, and, contain ethyl cellulose, Si Ban-85,1-4 butyrolactone and/or hydrogenated castor oil additive.
Described metal substrate 301 bottoms are set to coarse bottom surface, and described the second insulating barrier 302 is the ceramic insulating layer that adopts heat spraying method to make in the coarse bottom surface of described metal substrate 301 bottoms.The material of described ceramic insulating layer can be aluminium oxide, yittrium oxide, aluminium nitride, one or more combinations in the carborundum.
And on described the first insulating barrier 304, be manufactured with metal electrode layer 307, and being used for drawing a wherein electrode that connects LED luminescence chip 306, another utmost point of described LED luminescence chip is connected with described metal substrate 301.
Preferably, described package structure for LED also comprises the first external electrode 308, with the second external electrode 309, described the first external electrode 308 and the second external electrode 309 are welded on respectively on described metal electrode layer 307 and the described metal substrate 301 by ultra-sonic welded or resistance welding method.Described the first external electrode 308 is connected with the second external electrode and is connected with two electrodes of described LED luminescence chip respectively, is connected with the second external electrode by described the first external electrode 308 to connect external working power.
The described package structure for LED of present embodiment also comprises the lens 305 that are arranged on LED luminescence chip 306 tops, is used for encapsulating described LED luminescence chip.
Therefore, the package structure for LED of the embodiment of the invention, because LED luminescence chip 306 is directly pasted on described metal substrate 301, the width of described metal substrate 301 is enough large, sufficient heat-dissipating space is arranged, have high thermal conductivity, the dissipation of heat that can rapidly the LED luminescence chip be produced is gone out.And adopt the glass ceramics rete as the first insulating barrier 304, and on described the first insulating barrier 304, make again metal electrode layer 307 and the first external electrode 308, not only guarantee insulating properties but also can save material.
A kind of package structure for LED that the embodiment of the invention 2 provides, it is basic identical with embodiment 1, difference is, be close on described metal substrate 301 and between the described LED luminescence chip 306 and be provided with layer of metal heat-conducting layer 303, as shown in Figure 3, and the glass ceramics insulating barrier of described the first insulating barrier 304 for adopting the laser ablation melting method to make at described metal guide thermosphere.
As shown in Figure 3, a kind of package structure for LED that embodiment 2 provides comprises a metal substrate 301, the layer of metal heat-conducting layer 303 that (front) plates on described metal substrate 301 reaches the LED luminescence chip 306 of fitting and arranging with described metal guide thermosphere 303.Wherein, the material of described metal substrate 301 can be copper, and aluminium or its alloy consider for cost and thermal conductivity, and aluminium is preferred plan.And described metal guide thermosphere 303 materials can select the extraordinary silver of heat conduction (Ag), are conducive to strengthen its thermal conductivity.Like this, the heat that produces of described LED luminescence chip 306 can import the heat diffusion that produce in the metal substrate 301 into rapidly by the very high metal guide thermosphere 303 of conductive coefficient.
As shown in Figure 3, a kind of package structure for LED of providing of embodiment 2 also comprises: the glass ceramics insulating barrier (being described the first insulating barrier 304) that adopts laser ablation melting method or low-temperature sintering method to make at described metal guide thermosphere 303; And be manufactured with metal electrode layer 307 above the described glass ceramics insulating barrier again, and being used for drawing a wherein electrode that connects LED luminescence chip 306, another utmost point of described LED luminescence chip 306 is connected with described metal guide thermosphere 303 by an external electrode 309.
Wherein, the position of described metal electrode layer 307 can change according to demand, and strong adaptability is simple in structure.
Among the embodiment 2, described metal substrate 301 bottoms are set to coarse bottom surface, adopt heat spraying method to be manufactured with one deck ceramic insulating layer (being described the second insulating barrier 302) in the coarse bottom surface of described metal substrate bottom.The first external electrode described in the present embodiment 308 and the second external electrode 309 are welded on respectively on described metal electrode layer 307 and the described metal guide thermosphere 303 by ultra-sonic welded or resistance welding method.Described metal electrode layer 307 is to fit by laser ablation methods melting and described glass ceramics insulating barrier to arrange.
And adopt the laser ablation melting method to form required glass ceramics insulating barrier and metal electrode layer, and avoided the integral high-temperature sintering, need not to adopt high-sintering process, energy-saving and environmental protection have enlarged the material category of optional metal substrate, are easy to realize industrialization.
Based on the package structure for LED of the invention described above, the embodiment of the invention also provides a kind of LED encapsulation method, and as shown in Figure 4, described method may further comprise the steps:
Step S110, with metal substrate 301 bottom surfaces cleanings and carry out roughening and process, and adopt heat spraying method to make the second insulating barrier 302 in metal substrate 301 bottom surfaces of processing through roughening; Such as Fig. 3 and shown in Figure 2.
Wherein, described the second insulating barrier 302 is preferably ceramic insulating layer.
Step S120, described metal substrate 301 positive applyings LED luminescence chip 306 and the first insulating barrier 304 are set, as shown in Figure 2.Preferably, plate layer of metal heat-conducting layer 303 in described metal substrate 301 fronts; As shown in Figure 3, then fit at described metal guide thermosphere 301 LED luminescence chip 306 is set, and to adopt the laser ablation melting methods to make one deck glass ceramics insulating barriers at described metal guide thermosphere 303 be described the first insulating barrier.
Step S130, on described the first insulating barrier 304, adopt the laser ablation melting method to make a metal electrode layer 307, and the first electrode and second electrode of described LED luminescence chip 306 be connected on respectively on described metal substrate 301 (or metal guide thermosphere 303) and the described metal electrode layer 307, as shown in Figure 2.
Step S140, employing ultra-sonic welded or resistance welding method are welded on the first external electrode 308 and the second external electrode 309 respectively on described metal electrode layer 307 and the described metal guide thermosphere 303, and make the lens 305 that are used for the packaged LED luminescence chip above described LED luminescence chip 306.
Below will by a concrete Application Example, LED encapsulation method of the present invention be described in further details: as shown in Figure 3,
The first step, choose a metal substrate 301, material can be copper, and aluminium or its alloy consider for cost and thermal conductivity, and aluminium is preferred plan, after metal substrate 301 cleanings, with the alligatoring of sandblasting of its back side.
Second step, the 301 usefulness physics spraying methods of the metal substrate after the alligatoring of sandblasting are made first insulating layer 302, and the second insulating barrier 302 is ceramic insulating layer described in this practical embodiment, and material is aluminium oxide.
The 3rd step, plate layer of metal heat-conducting layer 303 in metal substrate 301 fronts, material be silver-colored (Ag), strengthens its thermal conductivity.
The 4th step, use the laser ablation melting methods to make glass ceramics insulating barriers (being described the first insulating barrier 304) at metal guide thermosphere 303.
The 5th step, use laser ablation melting method making metal electrode layer 307 at glass ceramics insulating barrier (304), described metal electrode layer 307 Area Ratio glass ceramics insulating barriers (304) are smaller.
The 6th step, installation led chip 306, electrode is connected on respectively on metal guide thermosphere 303 and the metal electrode layer 307.
The 7th step, use ultra-sonic welded or resistance welding method are welded on external electrode (being the first external electrode 308 and the second external electrode 309) respectively on described metal electrode layer 307 and the described metal substrate 301 (or metal guide thermosphere 303).
The 8th step, making lens 305 are used for packaging LED chips 306.
1), described led chip is without ceramic insulating layer, avoided the low heat conductivity bottleneck in sum, the package structure for LED that the embodiment of the invention provides and method for packing thereof have following useful technique effect:, heat can not piled up in insulating barrier; 2), metal guide thermosphere and metal substrate all have high thermal conductivity, the heat that can rapidly LED be produced imports in the metal substrate; 3), the width of metal substrate is enough large, and sufficient heat-dissipating space is arranged; 4), adopt the glass ceramics rete as the first insulating barrier, make again metal electrode layer and external electrode in the above, not only guaranteed insulating properties but also can save material; 5), simple in structure, can change according to demand the position of metal conducting layer and electrode layer, strong adaptability; 6) use, overleaf spraying method to make insulating barrier, not only guaranteed the insulating properties of substrate but also can not have much impact to the integral heat sink effect.
Should be understood that application of the present invention is not limited to above-mentioned for those of ordinary skills, can be improved according to the above description or conversion for example, for example, 1), the metal heat-conducting layer material can flexible choice; 2), change the position of metal electrode, make it adapt to different demands; All these improvement and conversion all should belong to the protection range of claims of the present invention.
Claims (5)
1. a package structure for LED comprises a metal substrate, it is characterized in that, also is included in LED luminescence chip and the first insulating barrier that described metal substrate arranges above, and second insulating barrier of fitting and arranging below described metal substrate; And on described the first insulating barrier, be manufactured with metal electrode layer, and being used for drawing a wherein electrode that connects the LED luminescence chip, another electrode of described LED luminescence chip is connected with described metal substrate;
On described metal substrate and between the described LED luminescence chip, also be provided with the layer of metal heat-conducting layer, and the glass ceramics insulating barrier of described the first insulating barrier for adopting laser ablation melting method or low-temperature sintering method to make at described metal guide thermosphere;
Also comprise the first external electrode and the second external electrode, described the first external electrode and the second external electrode are welded on respectively on described metal electrode layer and the described metal guide thermosphere by ultra-sonic welded or resistance welding method;
Described metal electrode layer is to fit by laser ablation methods melting and described glass ceramics insulating barrier to arrange;
The material of described glass ceramics insulating barrier is mixed by glassy phase, ceramic powders and organic carrier, and described ceramic powders accounts for 10~70%, described glassy phase accounts for 20~80%, all the other are described organic carrier; Described ceramic powders is alundum (Al2O3), aluminium nitride, zirconia, carborundum and/or diamond; Described glassy phase comprises MgO-BaO-Al
2O
3-SiO
2System glass, and contain B
2O
3, TiO
2, CaF
2, and/or ZrO
2Additive; Described organic carrier comprises terpinol and/or tributyl citrate at least, and, contain ethyl cellulose, Si Ban-85,1-4 butyrolactone and/or hydrogenated castor oil additive.
2. package structure for LED according to claim 1, it is characterized in that, described metal substrate bottom is set to coarse bottom surface, and described the second insulating barrier is the ceramic insulating layer that adopts heat spraying method to make in the coarse bottom surface of described metal substrate bottom.
3. package structure for LED according to claim 2 is characterized in that, the making material of described ceramic insulating layer is aluminium oxide, yittrium oxide, aluminium nitride, one or more combinations in the carborundum; The material of described metal guide thermosphere is silver.
4. package structure for LED according to claim 1 is characterized in that, it also comprises the lens that are arranged on LED luminescence chip top, is used for encapsulating described LED luminescence chip.
5. a LED encapsulation method is characterized in that, may further comprise the steps:
A, with metal substrate bottom surface cleaning and carry out roughening and process, and adopt heat spraying method to make the second insulating barrier in the metal substrate bottom surface of processing through roughening;
B, in described metal substrate front LED luminescence chip and the first insulating barrier are set,
C, on described the first insulating barrier, adopt the laser ablation melting method to make a metal electrode layer, and the first electrode and second electrode of described LED luminescence chip is connected on respectively on described metal substrate and the described metal electrode layer;
Described step B specifically may further comprise the steps:
B1, plate the layer of metal heat-conducting layer in described metal substrate front;
B2, fitting at described metal guide thermosphere arranges the LED luminescence chip, and to adopt the laser ablation melting method to make one deck glass ceramics insulating barrier at described metal guide thermosphere be described the first insulating barrier;
Also comprise step after the described step C:
D, employing ultra-sonic welded or resistance welding method are welded on the first external electrode and the second external electrode respectively on described metal electrode layer and the described metal guide thermosphere, and described LED luminescence chip top makes the lens that are used for the packaged LED luminescence chip;
Described metal electrode layer is to fit by laser ablation methods melting and described glass ceramics insulating barrier to arrange;
The material of described glass ceramics insulating barrier is mixed by glassy phase, ceramic powders and organic carrier, and described ceramic powders accounts for 10~70%, described glassy phase accounts for 20~80%, all the other are described organic carrier; Described ceramic powders is alundum (Al2O3), aluminium nitride, zirconia, carborundum and/or diamond; Described glassy phase comprises MgO-BaO-Al
2O
3-SiO
2System glass, and contain B
2O
3, TiO
2, CaF
2, and/or ZrO
2Additive; Described organic carrier comprises terpinol and/or tributyl citrate at least, and, contain ethyl cellulose, Si Ban-85,1-4 butyrolactone and/or hydrogenated castor oil additive.
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CN102376845A (en) * | 2010-08-17 | 2012-03-14 | 展晶科技(深圳)有限公司 | Packaging structure of light-emitting diode |
CN102956806B (en) * | 2012-03-21 | 2015-05-20 | 江苏日月照明电器有限公司 | Thermal conducting, insulating and voltage resisting integrated device |
CN103322436B (en) * | 2012-03-22 | 2015-02-25 | 武汉南格尔科技有限公司 | Structure of LED lamp |
CN104124323B (en) * | 2014-07-14 | 2017-07-11 | 华南师范大学 | A kind of high-power LED encapsulation structure and its manufacture method |
CN104157747A (en) * | 2014-08-15 | 2014-11-19 | 大恒新纪元科技股份有限公司 | High-heat radiation LED chip and manufacturing method thereof |
CN107154375B (en) * | 2016-03-03 | 2023-11-24 | 北京华卓精科科技股份有限公司 | Electrostatic chuck device and integration process thereof |
CN108550571B (en) * | 2018-04-25 | 2021-03-05 | 成都聚利中宇科技有限公司 | High-frequency integrated circuit module of integrated end-fire antenna and packaging method thereof |
CN108550570B (en) * | 2018-04-25 | 2020-04-03 | 成都聚利中宇科技有限公司 | High-frequency integrated circuit module of integrated vertical radiation antenna and packaging method thereof |
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