CN101965649B - 具有反射层的光电子半导体芯片 - Google Patents

具有反射层的光电子半导体芯片 Download PDF

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Publication number
CN101965649B
CN101965649B CN200980108273.5A CN200980108273A CN101965649B CN 101965649 B CN101965649 B CN 101965649B CN 200980108273 A CN200980108273 A CN 200980108273A CN 101965649 B CN101965649 B CN 101965649B
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China
Prior art keywords
semiconductor chip
semiconductor body
reflective layer
chip
contact point
Prior art date
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Expired - Fee Related
Application number
CN200980108273.5A
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English (en)
Chinese (zh)
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CN101965649A (zh
Inventor
托尼·阿尔布雷希特
克里斯蒂安·艾兴格
安德烈亚斯·魏玛
克斯廷·内韦林
安娜·卡什普扎克-扎布洛茨卡
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Publication of CN101965649A publication Critical patent/CN101965649A/zh
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors

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  • Led Devices (AREA)
CN200980108273.5A 2008-05-20 2009-04-24 具有反射层的光电子半导体芯片 Expired - Fee Related CN101965649B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008024327.2 2008-05-20
DE102008024327A DE102008024327A1 (de) 2008-05-20 2008-05-20 Optoelektronischer Halbleiterchip mit einer reflektierenden Schicht
PCT/DE2009/000576 WO2009140939A2 (de) 2008-05-20 2009-04-24 Optoelektronischer halbleiterchip mit einer reflektierenden schicht

Publications (2)

Publication Number Publication Date
CN101965649A CN101965649A (zh) 2011-02-02
CN101965649B true CN101965649B (zh) 2013-09-25

Family

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CN200980108273.5A Expired - Fee Related CN101965649B (zh) 2008-05-20 2009-04-24 具有反射层的光电子半导体芯片

Country Status (7)

Country Link
US (1) US8710512B2 (enExample)
EP (1) EP2281314B1 (enExample)
JP (1) JP5358680B2 (enExample)
KR (1) KR101552368B1 (enExample)
CN (1) CN101965649B (enExample)
DE (1) DE102008024327A1 (enExample)
WO (1) WO2009140939A2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5541260B2 (ja) * 2011-03-21 2014-07-09 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子
DE102011111919B4 (de) 2011-08-30 2023-03-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
DE102011112000B4 (de) * 2011-08-31 2023-11-30 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Leuchtdiodenchip
JP2013093412A (ja) * 2011-10-25 2013-05-16 Showa Denko Kk 発光ダイオード、発光ダイオードの製造方法、発光ダイオードランプ及び照明装置
DE102012101889A1 (de) 2012-03-06 2013-09-12 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
DE102013103216A1 (de) 2013-03-28 2014-10-02 Osram Opto Semiconductors Gmbh Strahlung emittierender Halbleiterchip
KR102299738B1 (ko) * 2014-12-23 2021-09-09 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 및 조명시스템
KR102353570B1 (ko) * 2015-08-24 2022-01-20 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 및 이를 구비한 발광 소자 패키지
JP6332301B2 (ja) * 2016-02-25 2018-05-30 日亜化学工業株式会社 発光素子
DE102016106831A1 (de) 2016-04-13 2017-10-19 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102017108199A1 (de) * 2017-04-18 2018-10-18 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Betriebsverfahren für ein optoelektronisches Halbleiterbauteil
US20240379579A1 (en) * 2020-12-31 2024-11-14 Dynax Semiconductor, Inc. Semiconductor device and manufacturing method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW544953B (en) * 2002-06-03 2003-08-01 Opto Tech Corp Light emitting diode capable of increasing the light emitting efficiency
TW200816519A (en) * 2006-06-19 2008-04-01 Sanken Electric Co Ltd Semiconductor light emitting device and its manufacturing method

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5406095A (en) * 1992-08-27 1995-04-11 Victor Company Of Japan, Ltd. Light emitting diode array and production method of the light emitting diode
TWI289944B (en) 2000-05-26 2007-11-11 Osram Opto Semiconductors Gmbh Light-emitting-diode-element with a light-emitting-diode-chip
JP2004047504A (ja) * 2002-07-08 2004-02-12 Korai Kagi Kofun Yugenkoshi 発光効率を高めた発光ダイオード
KR100523484B1 (ko) * 2002-11-11 2005-10-24 한국전자통신연구원 전류 제한 구조를 갖는 반도체 광소자의 제조방법
JP2005101212A (ja) 2003-09-24 2005-04-14 Toyoda Gosei Co Ltd 半導体発光素子
US20050205883A1 (en) * 2004-03-19 2005-09-22 Wierer Jonathan J Jr Photonic crystal light emitting device
JP4330476B2 (ja) 2004-03-29 2009-09-16 スタンレー電気株式会社 半導体発光素子
DE102004040277B4 (de) 2004-06-30 2015-07-30 Osram Opto Semiconductors Gmbh Reflektierendes Schichtsystem mit einer Mehrzahl von Schichten zur Aufbringung auf ein III/V-Verbindungshalbleitermaterial
US7964884B2 (en) 2004-10-22 2011-06-21 Seoul Opto Device Co., Ltd. GaN compound semiconductor light emitting element and method of manufacturing the same
US7815901B2 (en) * 2005-01-28 2010-10-19 L'ORéAL S.A. Hair treatment method
JP4951865B2 (ja) * 2005-03-02 2012-06-13 日亜化学工業株式会社 半導体発光素子
JP2007214302A (ja) * 2006-02-09 2007-08-23 Nanoteco Corp 発光素子、及びその製造方法
US7781791B2 (en) * 2006-02-28 2010-08-24 Rohm Co., Ltd. Semiconductor light emitting element
JP2007300017A (ja) * 2006-05-02 2007-11-15 Sanken Electric Co Ltd 半導体発光素子
US8716728B2 (en) * 2006-10-20 2014-05-06 Mitsubishi Chemical Corporation Nitride semiconductor light-emitting diode device
TWI344709B (en) * 2007-06-14 2011-07-01 Epistar Corp Light emitting device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW544953B (en) * 2002-06-03 2003-08-01 Opto Tech Corp Light emitting diode capable of increasing the light emitting efficiency
TW200816519A (en) * 2006-06-19 2008-04-01 Sanken Electric Co Ltd Semiconductor light emitting device and its manufacturing method

Also Published As

Publication number Publication date
EP2281314B1 (de) 2015-07-15
WO2009140939A2 (de) 2009-11-26
KR101552368B1 (ko) 2015-09-10
JP2011521461A (ja) 2011-07-21
CN101965649A (zh) 2011-02-02
US8710512B2 (en) 2014-04-29
DE102008024327A1 (de) 2009-11-26
WO2009140939A3 (de) 2010-01-21
JP5358680B2 (ja) 2013-12-04
US20110079810A1 (en) 2011-04-07
EP2281314A2 (de) 2011-02-09
KR20110014556A (ko) 2011-02-11

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