CN101958323A - Sonos快闪存储器单元及其形成方法 - Google Patents
Sonos快闪存储器单元及其形成方法 Download PDFInfo
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- CN101958323A CN101958323A CN2009100549446A CN200910054944A CN101958323A CN 101958323 A CN101958323 A CN 101958323A CN 2009100549446 A CN2009100549446 A CN 2009100549446A CN 200910054944 A CN200910054944 A CN 200910054944A CN 101958323 A CN101958323 A CN 101958323A
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CN2009100549446A CN101958323A (zh) | 2009-07-16 | 2009-07-16 | Sonos快闪存储器单元及其形成方法 |
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CN101958323A true CN101958323A (zh) | 2011-01-26 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102446832A (zh) * | 2011-09-29 | 2012-05-09 | 上海华力微电子有限公司 | 一种避免双刻蚀阻挡层引起的接触孔不通的方法 |
US8916432B1 (en) | 2014-01-21 | 2014-12-23 | Cypress Semiconductor Corporation | Methods to integrate SONOS into CMOS flow |
CN104392965A (zh) * | 2014-11-17 | 2015-03-04 | 上海华力微电子有限公司 | 一种sonos闪存器件的编译方法 |
CN104425500A (zh) * | 2013-08-30 | 2015-03-18 | 上海华虹宏力半导体制造有限公司 | Sonos非挥发性存储器及其制造方法 |
CN105161407A (zh) * | 2015-06-26 | 2015-12-16 | 武汉新芯集成电路制造有限公司 | 一种防止硅表面金属污染的方法 |
CN112563277A (zh) * | 2020-11-13 | 2021-03-26 | 上海华力微电子有限公司 | NOR flash单元结构及其制造方法 |
-
2009
- 2009-07-16 CN CN2009100549446A patent/CN101958323A/zh active Pending
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102446832A (zh) * | 2011-09-29 | 2012-05-09 | 上海华力微电子有限公司 | 一种避免双刻蚀阻挡层引起的接触孔不通的方法 |
CN102446832B (zh) * | 2011-09-29 | 2014-02-05 | 上海华力微电子有限公司 | 一种避免双刻蚀阻挡层引起的接触孔不通的方法 |
CN104425500A (zh) * | 2013-08-30 | 2015-03-18 | 上海华虹宏力半导体制造有限公司 | Sonos非挥发性存储器及其制造方法 |
CN104425500B (zh) * | 2013-08-30 | 2018-08-21 | 上海华虹宏力半导体制造有限公司 | Sonos非挥发性存储器及其制造方法 |
US8916432B1 (en) | 2014-01-21 | 2014-12-23 | Cypress Semiconductor Corporation | Methods to integrate SONOS into CMOS flow |
US9893172B2 (en) | 2014-01-21 | 2018-02-13 | Cypress Semiconductor Corporation | Methods to integrate SONOS into CMOS flow |
CN104392965A (zh) * | 2014-11-17 | 2015-03-04 | 上海华力微电子有限公司 | 一种sonos闪存器件的编译方法 |
CN105161407A (zh) * | 2015-06-26 | 2015-12-16 | 武汉新芯集成电路制造有限公司 | 一种防止硅表面金属污染的方法 |
CN105161407B (zh) * | 2015-06-26 | 2018-06-26 | 武汉新芯集成电路制造有限公司 | 一种防止硅表面金属污染的方法 |
CN112563277A (zh) * | 2020-11-13 | 2021-03-26 | 上海华力微电子有限公司 | NOR flash单元结构及其制造方法 |
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ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING (BEIJING) INTERNATIONA Effective date: 20121026 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20121026 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant after: Semiconductor Manufacturing International (Shanghai) Corporation Applicant after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant before: Semiconductor Manufacturing International (Shanghai) Corporation |
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RJ01 | Rejection of invention patent application after publication |
Application publication date: 20110126 |
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RJ01 | Rejection of invention patent application after publication |