CN101958326A - Sonos快闪存储器单元及其形成方法 - Google Patents
Sonos快闪存储器单元及其形成方法 Download PDFInfo
- Publication number
- CN101958326A CN101958326A CN2009100549770A CN200910054977A CN101958326A CN 101958326 A CN101958326 A CN 101958326A CN 2009100549770 A CN2009100549770 A CN 2009100549770A CN 200910054977 A CN200910054977 A CN 200910054977A CN 101958326 A CN101958326 A CN 101958326A
- Authority
- CN
- China
- Prior art keywords
- flash memory
- silicon
- layer
- grid
- silicon oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (12)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009100549770A CN101958326A (zh) | 2009-07-16 | 2009-07-16 | Sonos快闪存储器单元及其形成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009100549770A CN101958326A (zh) | 2009-07-16 | 2009-07-16 | Sonos快闪存储器单元及其形成方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN101958326A true CN101958326A (zh) | 2011-01-26 |
Family
ID=43485565
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009100549770A Pending CN101958326A (zh) | 2009-07-16 | 2009-07-16 | Sonos快闪存储器单元及其形成方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN101958326A (zh) |
-
2009
- 2009-07-16 CN CN2009100549770A patent/CN101958326A/zh active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101373635B (zh) | 非易失存储器件 | |
CN103296027B (zh) | 采用n沟道和p沟道mos晶体管的模拟浮动栅极存储器制造工艺 | |
JP2978477B1 (ja) | 半導体集積回路装置およびその製造方法 | |
US9461129B2 (en) | Memory cell having a vertical selection gate formed in an FDSOI substrate | |
CN100463226C (zh) | 快闪存储器的低介电系数侧壁子结构 | |
US20080145985A1 (en) | Embedded semiconductor memory devices and methods for fabricating the same | |
KR101230716B1 (ko) | 절연 층 아래에 매립된 제 2 제어 게이트를 갖는 SeOI상의 플래시 메모리 셀 | |
US6875660B2 (en) | Method of manufacturing high coupling ratio flash memory having sidewall spacer floating gate electrode | |
CN101958323A (zh) | Sonos快闪存储器单元及其形成方法 | |
US20170047336A1 (en) | Semiconductor structure including a nonvolatile memory cell and method for the formation thereof | |
US20180182774A1 (en) | Semiconductor device and method of manufacturing the semiconductor device | |
KR100253778B1 (ko) | 불휘발성 반도체 메모리장치 및 그 제조방법 | |
US6801456B1 (en) | Method for programming, erasing and reading a flash memory cell | |
JP2000114404A (ja) | フラッシュメモリおよびその製造方法 | |
JPH11330280A (ja) | チャネル消去/書込によるフラッシュメモリ―セル構造の製造方法およびその操作方法 | |
CN101958325B (zh) | Sonos快闪存储器单元及其形成方法 | |
US20120112265A1 (en) | Non-volatile semiconductor memory device | |
US6630708B1 (en) | Non-volatile memory and method for fabricating the same | |
CN101136414A (zh) | 非易失性半导体存储装置及其制造方法 | |
JP2001284473A (ja) | 不揮発性半導体メモリ | |
CN101958324B (zh) | Sonos快闪存储器单元及其形成方法 | |
US10892341B2 (en) | Flash memory with assistant gate and method of fabricating the same | |
CN101958326A (zh) | Sonos快闪存储器单元及其形成方法 | |
US6642571B2 (en) | Nonvolatile semiconductor memory | |
CN116782658B (zh) | 半导体结构及其形成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING (BEIJING) INTERNATIONA Effective date: 20121101 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20121101 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant after: Semiconductor Manufacturing International (Shanghai) Corporation Applicant after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20110126 |
|
RJ01 | Rejection of invention patent application after publication |