CN101939689A - 带有弱导光波导模式的电吸收调制器 - Google Patents
带有弱导光波导模式的电吸收调制器 Download PDFInfo
- Publication number
- CN101939689A CN101939689A CN2008801151497A CN200880115149A CN101939689A CN 101939689 A CN101939689 A CN 101939689A CN 2008801151497 A CN2008801151497 A CN 2008801151497A CN 200880115149 A CN200880115149 A CN 200880115149A CN 101939689 A CN101939689 A CN 101939689A
- Authority
- CN
- China
- Prior art keywords
- absorption layer
- electroabsorption modulator
- thickness
- layer
- quantum wells
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title description 24
- 238000010521 absorption reaction Methods 0.000 claims abstract description 44
- 239000004065 semiconductor Substances 0.000 claims abstract description 26
- 239000000835 fiber Substances 0.000 description 10
- 238000013461 design Methods 0.000 description 6
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 239000013307 optical fiber Substances 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 238000004088 simulation Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000010748 Photoabsorption Effects 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
- G02F1/01708—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells in an optical wavequide structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12078—Gallium arsenide or alloys (GaAs, GaAlAs, GaAsP, GaInAs)
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12097—Ridge, rib or the like
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12126—Light absorber
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12142—Modulator
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/0155—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption
- G02F1/0157—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption using electro-absorption effects, e.g. Franz-Keldysh [FK] effect or quantum confined stark effect [QCSE]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/06—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 integrated waveguide
- G02F2201/063—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 integrated waveguide ridge; rib; strip loaded
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/06—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 integrated waveguide
- G02F2201/066—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 integrated waveguide channel; buried
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
Description
Claims (14)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0717606A GB2454452B (en) | 2007-09-10 | 2007-09-10 | Optoelectronic components |
GB0717606.8 | 2007-09-10 | ||
PCT/GB2008/050806 WO2009034381A1 (en) | 2007-09-10 | 2008-09-10 | Electroabsorption modulators with a weakly guided optical waveguide mode |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101939689A true CN101939689A (zh) | 2011-01-05 |
CN101939689B CN101939689B (zh) | 2014-06-04 |
Family
ID=38640530
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200880115149.7A Active CN101939689B (zh) | 2007-09-10 | 2008-09-10 | 带有弱导光波导模式的电吸收调制器 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20100215308A1 (zh) |
EP (1) | EP2195704A1 (zh) |
JP (1) | JP5557253B2 (zh) |
CN (1) | CN101939689B (zh) |
GB (1) | GB2454452B (zh) |
WO (1) | WO2009034381A1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102338940A (zh) * | 2011-08-31 | 2012-02-01 | 清华大学 | 基于环腔的电吸收调制器 |
CN103576344A (zh) * | 2012-07-30 | 2014-02-12 | 国际商业机器公司 | 半导体结构及其形成方法 |
WO2016015303A1 (zh) * | 2014-07-31 | 2016-02-04 | 华为技术有限公司 | 锗硅电吸收调制器 |
WO2022222919A1 (zh) * | 2021-04-20 | 2022-10-27 | 华为技术有限公司 | 电吸收调制激光器、光发射组件和光终端 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013058624A (ja) * | 2011-09-08 | 2013-03-28 | Mitsubishi Electric Corp | レーザダイオード素子の製造方法 |
US8606110B2 (en) | 2012-01-08 | 2013-12-10 | Optiway Ltd. | Optical distributed antenna system |
US9395563B2 (en) | 2013-08-01 | 2016-07-19 | Samsung Electronics Co., Ltd. | Electro-optic modulator and optic transmission modulator including the same |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5165105A (en) * | 1991-08-02 | 1992-11-17 | Minnesota Minning And Manufacturing Company | Separate confinement electroabsorption modulator utilizing the Franz-Keldysh effect |
JP3489878B2 (ja) * | 1993-10-22 | 2004-01-26 | シャープ株式会社 | 半導体レーザ素子およびその自励発振強度の調整方法 |
US5432123A (en) * | 1993-11-16 | 1995-07-11 | At&T Corp. | Method for preparation of monolithically integrated devices |
JPH11212041A (ja) * | 1998-01-29 | 1999-08-06 | Mitsubishi Electric Corp | 半導体光素子 |
JP2002169132A (ja) * | 2000-12-04 | 2002-06-14 | Toshiba Electronic Engineering Corp | 電界吸収型光変調器およびその製造方法 |
AU2002342020A1 (en) * | 2001-10-09 | 2003-04-22 | Infinera Corporation | Transmitter photonic integrated circuit |
EP1372228B1 (en) * | 2002-06-12 | 2006-10-04 | Agilent Technologies, Inc. - a Delaware corporation - | Integrated semiconductor laser and waveguide device |
JP2004140083A (ja) * | 2002-10-16 | 2004-05-13 | Sharp Corp | 半導体発光素子 |
US7142342B2 (en) * | 2003-06-02 | 2006-11-28 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd. | Electroabsorption modulator |
JP2006114584A (ja) * | 2004-10-13 | 2006-04-27 | Nippon Telegr & Teleph Corp <Ntt> | 光サブキャリア送信器 |
JP4814525B2 (ja) * | 2005-01-11 | 2011-11-16 | 株式会社日立製作所 | 光半導体装置 |
-
2007
- 2007-09-10 GB GB0717606A patent/GB2454452B/en active Active
-
2008
- 2008-09-10 EP EP08788775A patent/EP2195704A1/en not_active Ceased
- 2008-09-10 JP JP2010523599A patent/JP5557253B2/ja active Active
- 2008-09-10 CN CN200880115149.7A patent/CN101939689B/zh active Active
- 2008-09-10 WO PCT/GB2008/050806 patent/WO2009034381A1/en active Application Filing
-
2010
- 2010-03-10 US US12/721,318 patent/US20100215308A1/en not_active Abandoned
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102338940A (zh) * | 2011-08-31 | 2012-02-01 | 清华大学 | 基于环腔的电吸收调制器 |
CN102338940B (zh) * | 2011-08-31 | 2014-01-29 | 清华大学 | 基于环腔的电吸收调制器 |
CN103576344A (zh) * | 2012-07-30 | 2014-02-12 | 国际商业机器公司 | 半导体结构及其形成方法 |
CN103576344B (zh) * | 2012-07-30 | 2016-03-30 | 国际商业机器公司 | 半导体结构及其形成方法 |
WO2016015303A1 (zh) * | 2014-07-31 | 2016-02-04 | 华为技术有限公司 | 锗硅电吸收调制器 |
US9804426B2 (en) | 2014-07-31 | 2017-10-31 | Huawei Technologies Co., Ltd. | Silicon-germanium electro-absorption modulator |
WO2022222919A1 (zh) * | 2021-04-20 | 2022-10-27 | 华为技术有限公司 | 电吸收调制激光器、光发射组件和光终端 |
Also Published As
Publication number | Publication date |
---|---|
GB2454452B (en) | 2011-09-28 |
EP2195704A1 (en) | 2010-06-16 |
JP2010539522A (ja) | 2010-12-16 |
US20100215308A1 (en) | 2010-08-26 |
CN101939689B (zh) | 2014-06-04 |
WO2009034381A1 (en) | 2009-03-19 |
JP5557253B2 (ja) | 2014-07-23 |
GB0717606D0 (en) | 2007-10-17 |
GB2454452A (en) | 2009-05-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101939689B (zh) | 带有弱导光波导模式的电吸收调制器 | |
Kato | Ultrawide-band/high-frequency photodetectors | |
US7095938B2 (en) | Vertical integration of active devices within passive semiconductor waveguides | |
JP3221916B2 (ja) | 集積型光学ガイドと、光検出器とを備えたオプトエレクトロニックデバイス | |
US8817354B2 (en) | Optical device having reduced optical leakage | |
US5121182A (en) | Integrated optical semiconductor device | |
JP6318468B2 (ja) | 導波路型半導体受光装置及びその製造方法 | |
US9377581B2 (en) | Enhancing the performance of light sensors that receive light signals from an integrated waveguide | |
CN1372710A (zh) | 带有集成光调制器的可调谐激光源 | |
DE112008003958B4 (de) | Optische Nanodrahtblockgeräte zum Verstärken, Modulieren und Erfassen optischer Signale | |
JP3284994B2 (ja) | 半導体光集積素子及びその製造方法 | |
US6613596B2 (en) | Monolithically integrated photonic circuit | |
JP4168437B2 (ja) | 半導体受光素子 | |
US5397889A (en) | Guided-wave photoreceptor based on quantum wells made of semiconductor materials, particularly for coherent communications system with polarization diversity | |
Leclerc et al. | High-performance semiconductor optical amplifier array for self-aligned packaging using Si V-groove flip-chip technique | |
JP2001168371A (ja) | 装荷型半導体受光素子及びその製造方法 | |
JP2005294669A (ja) | 表面入射型受光素子 | |
GB2464219A (en) | Buried Heterostructure EAM | |
Harrison et al. | Monolithic integration of 1.3-/spl mu/m Stark-ladder electroabsorption waveguide modulators with multimode-interference splitters | |
Garmire | Sources, modulators, and detectors for fiber optic communication systems | |
Taguchi | PIN Photodiodes | |
JPH0353565A (ja) | 多重量子井戸構造光検出器 | |
KR100294626B1 (ko) | N(-)-i-n(+)구조의 전계흡수 광변조기 | |
CN115224584A (zh) | 电吸收调制激光器、光发射组件和光终端 | |
Tolstikhin et al. | InP-based photonic integrated circuits for optical performance surveillance, signal conditioning, and bandwidth management in DWDM transmission systems |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: HUAWEI TECHNOLOGIES CO., LTD. Free format text: FORMER OWNER: CT FOR INTEGRATED PHOTONICS LTD. Effective date: 20120807 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; TO: SHENZHEN, GUANGDONG PROVINCE |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20120807 Address after: Bantian HUAWEI headquarters office building, Longgang District, Shenzhen Applicant after: Huawei Technologies Co., Ltd. Address before: Suffolk Applicant before: Ct For Integrated Photonics Lt |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |