CN101937909A - 电模块 - Google Patents

电模块 Download PDF

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Publication number
CN101937909A
CN101937909A CN2010102153338A CN201010215333A CN101937909A CN 101937909 A CN101937909 A CN 101937909A CN 2010102153338 A CN2010102153338 A CN 2010102153338A CN 201010215333 A CN201010215333 A CN 201010215333A CN 101937909 A CN101937909 A CN 101937909A
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China
Prior art keywords
underboarding
semiconductor device
igbt
electric module
sintering
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Granted
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CN2010102153338A
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CN101937909B (zh
Inventor
C·黑德尔利
柳春雷
S·基辛
B·阿戈斯替尼
F·怀尔德奈尔
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ABB Schweiz AG
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ABB Research Ltd Switzerland
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
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    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
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Abstract

本发明提供一种用于制造包括第一衬底板(101)、第二衬底板(102)和第一和第二衬底板之间的一个或者多个半导体部件(103-110)的电模块的方法。还提供使用该方法获取的电模块以及包括这样的电模块的电转换器装置。在该方法中，通过烧结实现半导体部件的第一侧到第一衬底板之间的联接(112)，并且随后通过焊接实现半导体部件的第二侧到第二衬底板之间的联接(111)。由于烧结联接可以经受高温，高温焊料可以用于焊接联接，而不会损伤之前形成的烧结联接。

Description

电模块
技术领域
本发明涉及包括两个衬底板和衬底板之间的一个或者多个半导体部件的电模块。此外，本发明涉及用于制造上述类型的电模块的方法。另外，本发明涉及电转换器装置。
背景技术
因为在相同的工作温度下双侧冷却电模块相比单侧冷却电模块允许施加更高的电流，所以双侧冷却电模块对于电源装置是个具有吸引力的概念。双侧冷却模块的其中一种可能设计是其中诸如绝缘栅双极晶体管(IGBT)和二极管的半导体部件的电端子直接联接(bond)在导电且导热的衬底板之间的电模块。这些衬底板还具有与相关电源系统的散热器热接触和电接触的作用。因此，衬底板和散热器构成了电源系统的干流电路的一部分。这样的电模块的制造过程的一个关键问题是将半导体部件联接到衬底板上，这是因为这些联接的性质会限制电模块的工作温度和可靠性。
通常，上述该这种双侧冷却电模块是使用两个连续焊接步骤来完成的。在第一焊接步骤中，使用高温焊接焊料(solder)将半导体部件联接到其中一个衬底板，并且在第二焊接步骤中，使用低温焊料将半导体部件联接到另一个衬底板上。在第二步骤中使用低温焊料是用来避免损坏第一步骤中形成的焊接联接。确定电模块的工作温度的上限的其中一个因素是在第二焊接步骤中所使用的低温焊料的熔化温度。此外，当双侧冷却电模块已经安装在相关电源系统中时，双侧冷却电模块被压在电源系统的各元件之间，并且如果电模块的工作温度上升至接近低温联接的熔化温度时则应用到衬底板的压力可以导致将焊料挤出。通过在使用高温焊料进行联接的单个焊接步骤中制成上述电模块的联接，由挤出焊料和焊料熔化温度给定的限制可以上移。然而，这需要电模块的各部件的相对复杂的对准，在许多情况中这是不便利的、技术上要求苛刻并且价格昂贵。
发明内容
根据本发明的第一方面，提供用于制造包括第一衬底板、第二衬底板和第一和第二衬底板之间的一个或者多个半导体部件的电模块的新方法。根据本发明的方法包括：
通过烧结将一个或者多个半导体部件的第一侧联接到第一衬底板，并且随后
通过焊接将第二衬底板联接到一个或者多个半导体部件的第二侧。
由于烧结联接可以经受高温，因而随后的焊接步骤中可以使用高温焊料。在使用特定的烧结材料的情况下，可以获取接近1000℃的熔化温度。因此，使用上述工艺制造的电模块的工作温度可以高于使用以高和低温焊接材料进行连续的焊接步骤制造的电模块的工作温度。例如，微米或者甚至纳米级的银粉可以用于烧结工艺，该烧结工艺并不要求可能对半导体部件造成损伤的压力和温度的烧结工艺中，该压力和温度。。因为焊接允许补偿半导体部件的可能布局倾斜和通过由烧结工艺的容限差和半导体部件的厚度的容限差所引发的半导体部件的表面高度之间的可能差异，所以焊接是用于第二联接步骤的适合工艺。如果有必要，半导体部件的控制端子，例如绝缘栅双极晶体管的栅极，也可以使用适合工艺在一个单独步骤中进行联接。
根据本发明的第二方面，提供新的电模块。该电模块包括：
第一衬底板，
第二衬底板，以及
第一和第二衬底板之间的一个或者多个半导体部件；
其中，一个或者多个半导体部件和第一衬底板之间的联接是烧结联接，并且一个或者多个半导体部件和第二衬底板之间的联接是焊接联接。
根据本发明的第三方面，提供新的电转换器装置。该电转换器装置包括根据本发明的至少一个电模块，并且电模块的第一和第二衬底板构成该电转换器装置的干流电路的一部分。该电转换器装置可以例如是反相器、整流器和/或频率转换器。
在所附从属权利要求中描述了本发明的多个示例实施例。
结合附图阅读以下特定示例实施例的描述，可以更好地理解在结构、操作方法方面本发明的多个实施例以及其附加的目标和优点。
术语“包括”用在此处是开放性限制，并不排除也不要求未在此处记载的特征的存在。在从属权利要求中引用的特征除非明确指示否则可以相互自由组合。
附图说明
现在参考以下附图结合例子详细解释本发明的示例实施例及其益处，其中：
图1a示出根据本发明的实施例的电模块的侧视图；
图1b示出图1a中所示电模块的剖视图，该剖面沿着图1a的线A-A获得；
图2a示出根据本发明实施例的电转换器装置；
图2b示出图2a中所示电转换器装置的细节，并且
图3示出根据本发明实施例用于制造电模块的方法的流程图。
具体实施方式
图1a示出根据本发明的实施例的电模块的侧视图并且图1b示出图1a中所示电模块沿A-A的剖视图。电模块包括第一衬底板101、第二衬底板102和第一衬底板101和第二衬底板102之间的一个或者多个半导体部件103、104、105、106、107、108、109和110。衬底板101和102由铜、铝、钼、金属基质合成物或者其它导电且导热材料制成。它们可以被涂覆以使得表面适合用于所选出的联接工艺。当使用电模块时，衬底板和散热器一起形成干流路径的一部分。半导体部件103-110的每一个可以例如但不必须是以下的其中一个：绝缘栅双极晶体管(IGBT)、场效应晶体管(FET)、栅极可关断半导体闸流管(GTO)、半导体闸流管，或者二极管。例如，可能的是半导体部件103-106是绝缘栅双极晶体管(IGBT)并且半导体部件107-110是和IGBT反平行的二极管。
半导体部件和衬底板101之间的联接是烧结联接并且半导体部件和衬底板102之间的联接是焊接联接。局部放大图120示出衬底板101和半导体部件104之间的烧结联接112和衬底板102和半导体部件104之间的焊接联接111。由于烧结联接能够经受高温，可以在形成烧结联接之后使用高温焊料来制成焊接联接。在使用特定的烧结材料的情况下，可以获取甚至接近1000℃的熔化点。例如，微米或者甚至纳米级的银粉可以用在烧结中。因此图1a和1b中所示电模块的工作温度可以高于以首先使用高温焊料、随后使用低温焊料的连续焊接步骤制造出的相应电模块的工作温度。
根据本发明示例实施例的电模块包括用于半导体部件的控制信号的一个或者多个配线结构。每个配线结构113包括绝缘层114和绝缘层上的金属带115。金属带可以是例如铜或者铝的。配线结构与半导体部件可以联接到衬底板101的同一侧上。配线结构优选是DCB(直接铜联接)衬底，因为DCB衬底可以经受高于300℃温度，并且因此这从电模块的制造角度出发是非常有益的。DCB衬底可以通过烧结或者焊接联接到衬底板101。如果使用烧结，当半导体部件通过烧结联接到衬底板101时，DCB衬底优选结合同样的制造步骤联接到衬底板101。相反如果使用焊接，当半导体部件通过焊接联接到衬底板102时，DCB衬底优选结合同样的制造步骤联接到衬底板101。
对于另一个例子，配线结构可以是在衬底板101和102已经联接到半导体部件之后使用粘合剂接附到衬底板101的PCB(印刷电路板)。由于衬底板101和102之间的间隙相对窄，所以PCB的接附需要某些特定的工具和/或装置。例如，可以使用丝焊来将半导体部件上的栅极触点连接到配线结构。
在根据本发明实施例的电模块中，一个或者多个半导体部件包括一个或者多个绝缘栅双极晶体管(IGBT)。每个绝缘栅双极晶体管的集电极侧联接到衬底板101且每个绝缘栅双极晶体管的发射极侧联接到衬底板102。一个或者多个半导体部件还可以包括和IGBT反平行的一个或者多个二极管。
根据本发明的实施例的电转换器装置包括至少一个根据本发明实施例的电模块。图2a示出根据本发明实施例的电转换器装置。电转换器装置包括电端子251和电端子252，电端子251用于将电转换器装置连接到交变电压网络(未示)，电端子252用于将电转换器装置连接到可以是感应电动机的负载(未示)。电转换器装置包括可以是整流器的转换器单元253，其布置为将电能从交变电压网络传送到电转换器装置的中间电路266。转换器单元253也可以是这样的装置：该装置不仅能够从交变电压网络传送电能到中间电路266还可以从中间电路传送电能返回到交变电压网络。
电转换器装置包括反相器桥接器254，其可以从中间电路266传送电能到负载并且还可以从负载传送电能到中间电路。反相器桥接器的干路包括连接到中间电路的电导体元件255和256和连接到电端子252的不同的相的电导体元件257、258和259。反相器桥接器的干路包括压在图2a中所示电导体元件255-259之间的电模块260、261、262、263、264和265。电模块260-265的每一个包括：
第一衬底板，
第二衬底板，和
第一和第二衬底板之间的一个或者多个半导体部件。
其中，一个或者多个半导体部件和第一衬底板之间的联接是烧结联接，并且一个或者多个半导体部件和第二衬底板之间的联接是焊接联接。
电模块260-265可以是例如按照在图1a和1b中和涉及图1a和图1b的文本段落中所描述的情况。电模块260＝265的第一和第二衬底板的外部表面压向电导体元件255-259，如图2b中所示的针对电模块260的情况。从图2a和图2b可以看到，电模块260-265的第一和第二衬底板组成电转换器装置的干流电路的一部分。电模块260-265的每一个的半导体部件可以包括例如一个或者多个绝缘栅双极晶体管(IGBT)和与IGBT反平行的一个或者多个二极管。
图2a中所示的电转换器装置是频率转换器。根据本发明实施例的电转换器装置可以，例如(但不必须)，仅是反相器或者仅是整流器。
图3是用于制造包括第一衬底板、第二衬底板和第一和第二衬底板之间的一个或者多个半导体部件的电模块的根据本发明实施例的方法的流程图。该方法包括：
在方法步骤401中通过烧结将一个或者多个半导体部件的第一侧联接到第一衬底板，并且随后
在方法步骤402中通过焊接将第二衬底板联接到该一个或者多个半导体部件的第二侧。
根据本发明实施例的方法中，微米或者纳米级的银粉可以用于烧结。
根据本发明更优实施例的方法包括将用于一个或多个半导体部件的控制信号的一个或者多个配线结构与该一个或者多个半导体部件联接到第一衬底板的同一侧上。每个配线结构包括绝缘层和绝缘层的一侧或者两侧上的金属带。
根据本发明实施例的方法中，当通过烧结将一个或者多个半导体部件的第一侧联接到第一衬底板时，结合同样的方法步骤401通过烧结将一个或者多个配线结构联接到第一衬底板。
根据本发明实施例的方法中，当通过焊接将第二衬底板联接到一个或者多个半导体部件的第二侧时，结合同样的方法步骤402通过焊接将一个或者多个配线结构联接到第一衬底板。
根据本发明实施例的方法中，半导体部件的每一个可以是如下的其中一个：绝缘栅双极晶体管(IGBT)、场效应晶体管(FET)、栅极可关断半导体闸流管(GTO)、半导体闸流管，或者二极管。
在根据本发明实施例的方法中，一个或者多个半导体部件包括一个或者多个绝缘栅双极晶体管(IGBT)，其中每个绝缘栅双极晶体管的集电极侧联接到第一衬底板并且每个绝缘栅双极晶体管的发射极侧联接到第二衬底板。一个或者多个半导体部件还可以包括和IGBT反平行取向的一个或者多个二极管。
上述给定描述中提供的特定例子不应该认为是限制。从而，本发明不仅仅限于上述实施例，还可以有多种改变。

Claims (15)

1.一种电模块，包括第一衬底板(101)、第二衬底板(102)和第一衬底板和第二衬底板之间的一个或者多个半导体部件(103-110)，所述一个或者多个半导体部件和第二衬底板之间的联接(111)是焊接联接，其特征在于所述一个或者多个半导体部件和第一衬底板之间的联接是烧结联接。
2.根据权利要求1的电模块，其中，电模块还包括用于所述一个或者多个半导体部件的控制信号的一个或者多个配线结构(113)，每个配线结构包括绝缘层(114)和绝缘层的一侧或者两侧上的金属带(115)，并且每个配线结构与所述一个或者多个半导体部件联结到第一衬底板的同一侧上。
3.根据权利要求2的电模块，其中，配线结构和第一衬底板之间的联接是烧结连接。
4.根据权利要求2的电模块，其中，配线结构和第一衬底板之间的联接是焊接连接。
5.根据权利要求1的电模块，其中，半导体部件的每一个是以下的其中一个：绝缘栅双极晶体管(IGBT)、场效应晶体管(FET)、栅极可关断半导体闸流管(GTO)、半导体闸流管，二极管。
6.根据权利要求1的电模块，其中，烧结联接使用微米或者纳米级银粉。
7.根据权利要求1的电模块，其中，所述一个或者多个半导体部件包括一个或者多个绝缘栅双极晶体管(IGBT)，并且每个绝缘栅双极晶体管的集电极侧联接到第一衬底板并且每个绝缘栅双极晶体管的发射极侧联接到第二衬底板。
8.一种电转换器装置，其特征在于该电转换器装置包括根据权利要求1的至少一个电模块(260-265)，并且电模块的第一和第二衬底板构成电转换器装置的干流电路的一部分。
9.一种用于制造包括第一衬底板、第二衬底板和第一和第二衬底板之间的一个或者多个半导体部件的电模块的方法，其特征在于该方法包括：
通过烧结将所述一个或者多个半导体部件的第一侧联接到第一衬底板(401)，并且随后
通过焊接将第二衬底板联接到所述一个或者多个半导体部件的第二侧(402)。
10.根据权利要求9的方法，其中，该方法还包括将用于所述一个或者多个半导体部件的控制信号的一个或者多个配线结构与所述一个或者多个半导体部件联结到第一衬底板的同一侧上，每个配线结构包括绝缘层和绝缘层的一侧或者两侧上的金属带。
11.根据权利要求10的方法，其中，当通过烧结将所述一个或者多个半导体部件的第一侧联接到第一衬底板时，结合同样的方法步骤通过烧结将所述一个或者多个配线结构联接到第一衬底板。
12.根据权利要求10的方法，其中，当通过焊接将第二衬底板联接到所述一个或者多个半导体部件的第二侧时，结合同样的方法步骤通过焊接将所述一个或者多个配线结构联接到第一衬底板。
13.根据权利要求9的方法，其中，半导体部件的每一个是如下的其中一个：绝缘栅双极晶体管(IGBT)、场效应晶体管(FET)、栅极可关断半导体闸流管(GTO)、半导体闸流管，二极管。
14.根据权利要求9的方法，其中，微米或者纳米级的银粉用于烧结。
15.根据权利要求9的方法，其中，所述一个或者多个半导体部件包括一个或者多个绝缘栅双极晶体管(IGBT)，其中每个绝缘栅双极晶体管的集电极侧联接到第一衬底板并且每个绝缘栅双极晶体管的发射极侧联接到第二衬底板。
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