CN101924079A - 一种半导体芯片封装结构 - Google Patents
一种半导体芯片封装结构 Download PDFInfo
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- CN101924079A CN101924079A CN 201010234248 CN201010234248A CN101924079A CN 101924079 A CN101924079 A CN 101924079A CN 201010234248 CN201010234248 CN 201010234248 CN 201010234248 A CN201010234248 A CN 201010234248A CN 101924079 A CN101924079 A CN 101924079A
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- gallium nitride
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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CN 201010234248 CN101924079B (zh) | 2010-07-22 | 2010-07-22 | 一种半导体芯片封装结构 |
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CN 201010234248 CN101924079B (zh) | 2010-07-22 | 2010-07-22 | 一种半导体芯片封装结构 |
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CN101924079A true CN101924079A (zh) | 2010-12-22 |
CN101924079B CN101924079B (zh) | 2012-10-31 |
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CN 201010234248 Active CN101924079B (zh) | 2010-07-22 | 2010-07-22 | 一种半导体芯片封装结构 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104347579A (zh) * | 2013-07-31 | 2015-02-11 | 瑞萨电子株式会社 | 半导体装置 |
US9190393B1 (en) | 2013-09-10 | 2015-11-17 | Delta Electronics, Inc. | Low parasitic capacitance semiconductor device package |
CN108470723A (zh) * | 2017-03-30 | 2018-08-31 | 苏州能讯高能半导体有限公司 | 半导体器件及其制造方法 |
CN116626460A (zh) * | 2023-04-18 | 2023-08-22 | 山东大学 | 一种确定GaN晶体管纳米尺寸栅长二维电子气面密度的方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020185965A1 (en) * | 2001-06-11 | 2002-12-12 | Lumileds Lighting, U.S., Llc | Phosphor-converted light emitting device |
US6534850B2 (en) * | 2001-04-16 | 2003-03-18 | Hewlett-Packard Company | Electronic device sealed under vacuum containing a getter and method of operation |
US6933244B2 (en) * | 2002-01-22 | 2005-08-23 | Massachusetts Institute Of Technology | Method of fabrication for III-V semiconductor surface passivation |
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2010
- 2010-07-22 CN CN 201010234248 patent/CN101924079B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6534850B2 (en) * | 2001-04-16 | 2003-03-18 | Hewlett-Packard Company | Electronic device sealed under vacuum containing a getter and method of operation |
US20020185965A1 (en) * | 2001-06-11 | 2002-12-12 | Lumileds Lighting, U.S., Llc | Phosphor-converted light emitting device |
US6933244B2 (en) * | 2002-01-22 | 2005-08-23 | Massachusetts Institute Of Technology | Method of fabrication for III-V semiconductor surface passivation |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104347579A (zh) * | 2013-07-31 | 2015-02-11 | 瑞萨电子株式会社 | 半导体装置 |
US9190393B1 (en) | 2013-09-10 | 2015-11-17 | Delta Electronics, Inc. | Low parasitic capacitance semiconductor device package |
CN108470723A (zh) * | 2017-03-30 | 2018-08-31 | 苏州能讯高能半导体有限公司 | 半导体器件及其制造方法 |
CN116626460A (zh) * | 2023-04-18 | 2023-08-22 | 山东大学 | 一种确定GaN晶体管纳米尺寸栅长二维电子气面密度的方法 |
CN116626460B (zh) * | 2023-04-18 | 2024-01-30 | 山东大学 | 一种确定GaN晶体管纳米尺寸栅长二维电子气面密度的方法 |
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CN101924079B (zh) | 2012-10-31 |
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