CN101916962A - Equal-current synthetic high-power constant current power supply circuit - Google Patents
Equal-current synthetic high-power constant current power supply circuit Download PDFInfo
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- CN101916962A CN101916962A CN 201010270086 CN201010270086A CN101916962A CN 101916962 A CN101916962 A CN 101916962A CN 201010270086 CN201010270086 CN 201010270086 CN 201010270086 A CN201010270086 A CN 201010270086A CN 101916962 A CN101916962 A CN 101916962A
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Abstract
The invention relates to an equal-current synthetic high-power constant current power supply circuit, which belongs to the fields of electronic industry and optical communication. The circuit comprises a voltage reference circuit, a final driving circuit, a soft-start circuit, an anti-surge circuit, a modulation input circuit, a feedback control circuit, a current driving circuit and a control switch; the final driving circuit comprises high-power semiconductor devices and equal-current resistors which are connected in parallel, the equal-current resistors are respectively and correspondingly connected in series with drains of the high-power semiconductor devices, output current generated by the high-power semiconductor devices is merged and then flows through a sampling resistor; and the drains of the high-power semiconductor devices are respectively connected with a cathode of a semiconductor laser, and sources of the high-power semiconductor devices are connected with the sampling resistor. The circuit has the advantages of greatly enhancing the stability of the current output by a high-power semiconductor laser driver, enabling the current that flows through each MOS tube to be basically equal by adopting the equal-current technology, and greatly enhancing the reliability of a power supply in a high-load working state.
Description
Technical field
The present invention relates to electronics industry and optical communication field, particularly a kind of equal-current synthetic high-power constant current power supply circuit.
Background technology
High power semiconductor lasers is the essential pump light source of solid state laser of industries such as industrial production, military and national defense, is widely used in laser ranging, nuclear blast simulation, laser radar transmission, materials processing, little processing, heat treatment, mark location etc.High power laser has also obtained using widely at operative treatment tumour, skin treating, dental treatment, light analgesia and laser accunputure moxibustion, optical chromatography radiography medical domains such as (OCT) in addition.
What drive high power semiconductor lasers work is the special-purpose driving power with specific function.High power semiconductor lasers costs an arm and a leg, be a kind of high power density and device with high quantum efficiency, ability to bear for surge is very poor, small electric current changes the very big variation that will cause luminous power output and device parameters (as excitation wavelength, noiseproof feature, pattern is beated) variation, these change the safe handling directly jeopardize device, thereby the Driving technique of noise spectra of semiconductor lasers has high requirement in actual applications.Stability, reliability and fail safe are the keys of high power semiconductor lasers Driving technique.Stability has determined the purity of the stable and spectrum of laser output power; Reliability has determined the permanently effective operation of laser; Fail safe has determined laser not to be damaged under various fortuitous events.
The design of power tube parallel current-sharing when existing big electric current is exported, if output adopts independent large-power MOS part, though the output current index can satisfy the designing requirement of drive circuit, but under big current work state, the heat that power tube produces is bigger, if can not in time be transported to radiator, the accumulation that will produce heat, can cause the power tube damage when serious, cause the driver can not steady operation.
Summary of the invention
The object of the present invention is to provide a kind of equal-current synthetic high-power constant current power supply circuit, the unbalanced drawback of each pipe output current in the time of can effectively overcoming multitube parallel, the power tube that has solved the prior art existence can produce accumulation of heat, thereby cause power tube damage to make the driver can not steady operation, and drive problems such as stability, reliability, fail safe is relatively poor.It adopts negative-feedback principle to stablize output current, provides the DC driven electric current to laser diode, guarantees laser diode safety, stable, operation reliably and with long-term.Have the ability that drives extensive laser array, drive current can reach 20A, short-term stability 50ppm, and (short-term stability was defined as in one hour long-term stability 100ppm, the standard deviation of measured value and the ratio of mean value.Long-term stability was defined as in 24 hours; the standard deviation of measured value and the ratio of mean value); and have very high reliability and fail safe, provide current-limiting protection and time-delay soft start protection, accurately the operating current of setting laser diode and restriction electric current the semiconductor laser that is driven.Adopt the working method of a plurality of power tube parallel connections.Each power tube is worked under less current, each power tube dispels the heat separately simultaneously, the heat that can guarantee pipe like this is unlikely to produce accumulation, can in time discharge, thereby greatly strengthen the stability of high power semiconductor lasers driver output current.Adopted flow equalize technology, behind flows resistance of emitter serial connection of each metal-oxide-semiconductor, be connected in parallel again, thereby make the electric current that flows through each metal-oxide-semiconductor equal substantially.Adopt the Redundancy Design scheme of multitube parallel, greatly improved the reliability under the power supply high load capacity operating state.The present invention can be widely used in scientific research and the research and development of products production in the optical communication field.
The present invention realizes that the technical scheme that above-mentioned purpose adopts is:
Equal-current synthetic high-power constant current power supply circuit comprises voltage reference circuit 1, final driving circuit 2, soft starting circuit 3, anti-surge circuit 4, modulation input circuit 5, feedback control circuit 6, current driving circuit 7 and control switch 8; Described voltage reference circuit 1 is controlled voltage signal to current driving circuit 7 by potentiometer W1 output, current driving circuit 7 will be controlled voltage signal and be converted to output current, and by final driving circuit 2 outputs, final driving circuit 2 is connected with outside laser diode LD; Described soft starting circuit 3 is connected with current driving circuit 7, and anti-surge circuit 4 is in parallel with the laser diode LD of described outside, and soft starting circuit 3 and anti-surge circuit 4 are started by control switch 8 controls; Described modulation input circuit 5 is connected with current driving circuit 7, and modulation signal is inserted by the modulation input port, realizes the control of external signal to output current; Sample resistance R converts output current to voltage signal, feeds back to current driving circuit 7 by described feedback control circuit 6; Described final driving circuit 2 comprises large power semiconductor device Q3～Q10, flows resistance R9～R16 in parallel, described each flows resistance R9～R16 is connected in series with the drain electrode of each large power semiconductor device Q3～Q10 respectively accordingly, and sample resistance R flows through after the output current that each large power semiconductor device Q3～Q10 produces merges; The drain electrode of each large power semiconductor device Q3～Q10 is connected with the negative electrode of semiconductor laser respectively, and the source electrode of each large power semiconductor device Q3～Q10 is connected with sample resistance R; The anode of semiconductor laser is connected with power Vcc; In-phase end by the control voltage signal concatenation operation amplifier A3 of potentiometer W1 output, the voltage feedback signal that comes free sample resistance R is connected to the end of oppisite phase of operational amplifier A 3 via feedback control circuit, and the output of described operational amplifier A 3 is connected with the grid of each large power semiconductor device Q3～Q10 respectively.
Described large power semiconductor device Q3～Q10 is Darlington transistor or field-effect transistor, adopts circuit structure in parallel between the pipe.
The resistance of described flows resistance R9～R16 is 0.1 ohm～0.5 ohm, adopts the circuit structure of series connection between the drain electrode of each flows resistance and corresponding large power semiconductor device Q3～Q10.
The resistance of described sample resistance R is 0.01 ohm～0.1 ohm.
Beneficial effect of the present invention is:
(1) working method of a plurality of power tube parallel connections of employing.Each power tube is worked under less current, each power tube dispels the heat separately simultaneously, the heat that can guarantee pipe like this is unlikely to produce accumulation, can in time discharge, thereby greatly strengthen the stability of high power semiconductor lasers driver output current.
(2) adopt flow equalize technology.Behind flows resistance of emitter serial connection of each metal-oxide-semiconductor, be connected in parallel again, thereby make the electric current that flows through each metal-oxide-semiconductor equal substantially.
(3) adopt the Redundancy Design scheme.Adopt the Redundancy Design of multitube parallel, greatly improved the reliability under the power supply high load capacity operating state.
The present invention is a kind of high power semiconductor lasers constant-current driving power supply circuit, has the ability that drives extensive laser array, drive current can reach 20A, short-term stability 30ppm, (short-term stability was defined as in one hour long-term stability 75ppm, the standard deviation of measured value and the ratio of mean value.Long-term stability was defined as in 24 hours, the standard deviation of measured value and the ratio of mean value).Provide current-limiting protection to the semiconductor laser that is driven.When driver begins to provide electric current to load, adopt " time-delay soft start " technology, make drive current slowly be increased to set point.In addition, guarantee that the high power valve of high power semiconductor lasers driver output has good thermal diffusivity, guarantee that laser safety works reliable and stablely.And can be widely used in scientific research and research and development of products production in the optical communication field.
Description of drawings
Fig. 1 is a current-sharing synthesis type constant-current power supply circuit structured flowchart of the present invention.
Fig. 2 is an anti-surge circuit structured flowchart of the present invention.
Fig. 3 is a soft starting circuit structured flowchart of the present invention.
Fig. 4 is a modulation input circuit structured flowchart of the present invention.
Fig. 5 is current driving circuit of the present invention and final driving circuit structured flowchart.
Embodiment
Below in conjunction with accompanying drawing circuit structure of the present invention is further described.
Embodiment 1:
As shown in Figure 1, equal-current synthetic high-power constant current power supply circuit of the present invention comprises voltage reference circuit 1, final driving circuit 2, soft starting circuit 3, anti-surge circuit 4, modulation input circuit 5, feedback control circuit 6, current driving circuit 7 and control switch 8; Voltage reference circuit 1 is that the resistance by a voltage reference LM336-2.5 and one 9.1 kilo-ohms constitutes, and for circuit provides precise and stable reference voltage, is used to control output current and pre-set limit electric current.Potentiometer W1 is used to regulate output current.Final driving circuit 2 is exported the electric current of setting, and adopts the mode of a plurality of metal-oxide-semiconductor parallel connections, flows resistance of emitter serial connection of each metal-oxide-semiconductor.It is output current that current driving circuit 7 will be controlled voltage transitions.Feedback control circuit 6 has been realized the constant current feedback.Convert output current to voltage signal by sample resistance R and feed back to current driving circuit 7.Read display circuit and mainly constitute, be used to show actual output current by digital display module.Modulation input circuit 5 is used for the control of external signal to output current, and actual output current can be controlled separately by the external modulation signal, also can perhaps be controlled jointly by both by the voltage output control of inside, depends on actual needs.
As shown in Figure 2, anti-surge circuit 4 comprises a RC charging circuit of being made up of resistance R 1 and capacitor C 1, a N channel enhancement field effect transistor Q1, a normally closed solid-state relay.Wherein the grid of field effect transistor Q1 links to each other with capacitor C 1 with resistance R 1, capacitor C 1 other end ground connection, and the drain electrode of field effect transistor Q1 links to each other with relay, the source ground of field effect transistor Q1.The model of field effect transistor Q1 can be 2sk1458.
The operation principle of this circuit is: the anode of laser diode LD and negative electrode and relay two normal-closed ends are connected in parallel, so the negative electrode of laser diode LD and anode be short circuit, are protected.When opening driver, if do not open control switch, laser diode LD is short circuit still, only open control switch 8 after, the relay normal-closed end is opened the surge impact when laser diode LD is just avoided driver switch like this in time-delay after 2～3 seconds.The delay time of circuit is by the time constant decision of RC charging circuit.
As shown in Figure 3, soft starting circuit 3 comprises the triode T of a positive-negative-positive, a RC discharge circuit that is made of resistance R 3, capacitor C 2, a N channel enhancement field effect transistor Q2.Wherein the grid of field effect transistor Q2 links to each other with capacitor C 2 with resistance R 3, resistance R 3 and capacitor C 2 other end ground connection; The drain electrode of field effect transistor Q2 links to each other with control signal, the source ground of field effect transistor Q2; The base stage of triode T is connected with control switch 8 through resistance R 2, and the emitter of triode T connects working power V
CC, the collector electrode of triode T connects the grid of Q2.
Wherein, the model of triode T can select 9012, and the model of field effect transistor Q2 can be selected 2sk1458.
The function of soft starting circuit is: after the time-delay, actual output current has the rising edge of a 200～500mS when zero reaches predetermined value.Triode T in the circuit is the triode of a positive-negative-positive, when control signal does not arrive, voltage on the resistance R 3 is a high level, guarantee the complete conducting of field effect transistor Q2, so just control signal is clamped down on zero potential, that is to say if do not open control switch there will not be electric current output in the circuit.Open control switch 8, high level on the capacitor C 3 will be by resistance R 2 discharges, the state of field effect transistor Q2 turn-offs by being conducting to fully gradually, also just slowly lost the effect of clamping down on to control signal, showing as the control signal that is added on the current driving circuit 7 has a rising edge, so output current also has a rising edge.The size of rising edge is by the time constant decision of RC discharge loop.Here be noted that the delay time of soft starting circuit will equate or be slightly larger than the delay time of anti-surge circuit, otherwise the function of soft start can't realize.
As shown in Figure 4, modulation input circuit 5 is connected with A2 with two operational amplifier A 1 respectively by five resistance R 4 to R8, and the value of each resistance all is 10 kilohms.Resistance R 4 one ends link to each other other end ground connection with operational amplifier A 1 in-phase end.Modulation signal links to each other with operational amplifier A 1 in-phase end.Resistance R 5 one ends link to each other with the output of operational amplifier A 1, and the other end links to each other with the in-phase end of operational amplifier A 2.Resistance R 6 one ends link to each other other end ground connection with operational amplifier A 2 end of oppisite phase.Resistance R 7 is connected between the end of oppisite phase and output of operational amplifier A 2.Resistance R 8 one termination control signals, the other end links to each other with the in-phase end of operational amplifier A 2.This circuit realized modulation signal through behind the isolation level with the addition of control signal.The model of operational amplifier A 1 and A2 is TLC2252.
As shown in Figure 5, final driving circuit 2 comprises the large power semiconductor device Q3～Q10 of eight parallel connections, large power semiconductor device Q3～Q10 can select Darlington transistor, also can select field-effect transistor, and present embodiment is selected N channel enhancement field effect transistor IRF530 for use.Final driving circuit 2 also comprises eight flows resistance R9～R16, and each flows resistance is connected in series with the drain electrode of field effect transistor Q3～Q10 respectively accordingly, and the resistance of flows resistance R9～R16 is 0.5 ohm.The sample resistance R that flows through after the output current that the field effect transistor Q3 of eight tunnel parallel connections～Q10 produces merges, the resistance of sample resistance R is 0.1 ohm.The drain electrode of field effect transistor Q3～Q10 is connected with the negative electrode of semiconductor laser, and source electrode is connected with sample resistance R17.The anode of semiconductor laser is connected with power Vcc.By the in-phase end of the control signal concatenation operation amplifier A3 of potentiometer W1 output, the voltage feedback signal that comes from sample resistance R is connected to the end of oppisite phase of operational amplifier A 3 via feedback control circuit 6.The output of operational amplifier A 3 is connected with the grid of field effect transistor Q3～Q10.The model of operational amplifier A 3 is TLC2252.
Adopt the circuit structure of above-mentioned flows resistance, the unbalanced drawback of each pipe output current in the time of can effectively overcoming multitube parallel.Simultaneously, adopt the working method of eight branch road parallel connections, increased the redundancy of pipe, when some or two damaged tubular, can guarantee that circuit normally works, greatly improved the reliability of circuit.
Claims (4)
1. an equal-current synthetic high-power constant current power supply circuit comprises voltage reference circuit (1), final driving circuit (2), soft starting circuit (3), anti-surge circuit (4), modulation input circuit (5), feedback control circuit (6), current driving circuit (7) and control switch (8); Described voltage reference circuit (1) is controlled voltage signal to current driving circuit (7) by potentiometer (W1) output, current driving circuit (7) will be controlled voltage signal and be converted to output current, and by final driving circuit (2) output, final driving circuit (2) is connected with outside laser diode LD; Described soft starting circuit (3) is connected with current driving circuit (7), and anti-surge circuit (4) is in parallel with the laser diode LD of described outside, and soft starting circuit (3) and anti-surge circuit (4) are started by control switch (8) control; Described modulation input circuit (5) is connected with current driving circuit (7), and modulation signal is inserted by the modulation input port, realizes the control of external signal to output current; Sample resistance (R) converts output current to voltage signal, feeds back to current driving circuit (7) by described feedback control circuit (6); It is characterized in that: described final driving circuit (2) comprises large power semiconductor device (Q3)～(Q10), flows resistance (R9)～(R16) in parallel, described each flows resistance (R9)～(R16) is connected in series with the drain electrode of each large power semiconductor device (Q3)～(Q10) respectively accordingly, the sample resistance (R) of flowing through after the output current that each large power semiconductor device (Q3)～(Q10) produces merges; The drain electrode of each large power semiconductor device (Q3)～(Q10) is connected with the negative electrode of semiconductor laser respectively, and the source electrode of each large power semiconductor device (Q3)～(Q10) is connected with sample resistance (R); The anode of semiconductor laser is connected with power Vcc; In-phase end by the control voltage signal concatenation operation amplifier (A3) of potentiometer W1 output, the voltage feedback signal that comes free sample resistance (R) is connected to the end of oppisite phase of operational amplifier (A3) via feedback control circuit, and the output of described operational amplifier (A3) is connected with the grid of each large power semiconductor device (Q3)～(Q10) respectively.
2. equal-current synthetic high-power constant current power supply circuit according to claim 1 is characterized in that: described large power semiconductor device (Q3)～(Q10) is high-power field-effect transistor, adopts circuit structure in parallel between the pipe.
3. equal-current synthetic high-power constant current power supply circuit according to claim 1, it is characterized in that: the resistance of described flows resistance (R9)～(R16) is 0.1 ohm～0.5 ohm, adopts the circuit structure of series connection between the drain electrode of each flows resistance and corresponding large power semiconductor device (Q3)～(Q10).
4. equal-current synthetic high-power constant current power supply circuit according to claim 1 is characterized in that: the resistance of described sample resistance (R) is 0.01 ohm～0.1 ohm.
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| CN102593713A (en) * | 2012-03-07 | 2012-07-18 | 山东大学 | Circuit for simulating automatic power control of semiconductor laser |
| CN102637054A (en) * | 2012-04-21 | 2012-08-15 | 吉林大学 | 50-ampere power consumption balanced-type high-power constant-current source |
| CN103227412A (en) * | 2013-04-12 | 2013-07-31 | 南京诺威尔光电系统有限公司 | Constant-current complementary control circuit of high-power semiconductor laser device |
| CN103326675A (en) * | 2013-06-21 | 2013-09-25 | 苏州广帝科微电子有限公司 | Linear radiofrequency power amplifier |
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| CN108124344A (en) * | 2016-11-30 | 2018-06-05 | 无锡华润矽科微电子有限公司 | Constant current led drive circuit |
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| TWI423542B (en) * | 2011-05-31 | 2014-01-11 | Amtek Semiconductor Co Ltd | Photo diode control and photo diode controller with this circuit |
| CN102593713B (en) * | 2012-03-07 | 2014-05-07 | 山东大学 | Circuit for simulating automatic power control of semiconductor laser |
| CN102593713A (en) * | 2012-03-07 | 2012-07-18 | 山东大学 | Circuit for simulating automatic power control of semiconductor laser |
| CN102637054A (en) * | 2012-04-21 | 2012-08-15 | 吉林大学 | 50-ampere power consumption balanced-type high-power constant-current source |
| CN104010404A (en) * | 2013-02-22 | 2014-08-27 | 普诚科技股份有限公司 | Light-emitting-diode drive unit |
| CN104010404B (en) * | 2013-02-22 | 2016-09-28 | 普诚科技股份有限公司 | Light emitting diode drive device |
| CN103227412A (en) * | 2013-04-12 | 2013-07-31 | 南京诺威尔光电系统有限公司 | Constant-current complementary control circuit of high-power semiconductor laser device |
| CN103227412B (en) * | 2013-04-12 | 2015-04-01 | 南京诺威尔光电系统有限公司 | Constant-current complementary control circuit of high-power semiconductor laser device |
| CN103326675A (en) * | 2013-06-21 | 2013-09-25 | 苏州广帝科微电子有限公司 | Linear radiofrequency power amplifier |
| CN104617483B (en) * | 2015-01-27 | 2017-06-16 | 东南大学 | The ultrahigh speed laser driver circuit and driver chip of a kind of bandwidth compensation |
| CN104617483A (en) * | 2015-01-27 | 2015-05-13 | 东南大学 | Ultra high speed laser driver circuit with bandwidth compensation and driver chip |
| CN104734001A (en) * | 2015-03-30 | 2015-06-24 | 中国科学院微电子研究所 | Narrow pulse driving circuit |
| CN104883800A (en) * | 2015-06-15 | 2015-09-02 | 南京大学 | GHz high-speed LED optical communication driver |
| CN106157168A (en) * | 2016-06-30 | 2016-11-23 | 温州大学 | Based on current-sharing standard deviation rectangular array and minimum parallel operation system module number controlling method |
| CN108124344A (en) * | 2016-11-30 | 2018-06-05 | 无锡华润矽科微电子有限公司 | Constant current led drive circuit |
| CN111564965A (en) * | 2020-04-23 | 2020-08-21 | 华为技术有限公司 | Slow starting circuit, controller and power supply equipment |
| CN111564965B (en) * | 2020-04-23 | 2021-10-26 | 华为技术有限公司 | Slow starting circuit, controller and power supply equipment |
| CN114243436A (en) * | 2022-02-24 | 2022-03-25 | 武汉锐科光纤激光技术股份有限公司 | Linear constant-current driving source of fiber laser |
| CN116930800A (en) * | 2023-09-18 | 2023-10-24 | 湖南恩智测控技术有限公司 | Fuel cell impedance measuring device and method |
| CN116930800B (en) * | 2023-09-18 | 2023-12-19 | 湖南恩智测控技术有限公司 | Fuel cell impedance measuring device and method |
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