CN103227412B - Constant-current complementary control circuit of high-power semiconductor laser device - Google Patents
Constant-current complementary control circuit of high-power semiconductor laser device Download PDFInfo
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- CN103227412B CN103227412B CN201310127264.9A CN201310127264A CN103227412B CN 103227412 B CN103227412 B CN 103227412B CN 201310127264 A CN201310127264 A CN 201310127264A CN 103227412 B CN103227412 B CN 103227412B
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Abstract
The invention relates to a constant-current complementary current drive and control circuit of a high-power semiconductor laser device for drive and control of the high-power semiconductor laser device, and belongs to the field of electronic and optoelectronic industries. The constant-current complementary current drive and control circuit comprises functional circuits such as a laser current control circuit, a laser current feedback circuit, a laser current sampling resistor, a laser current MOSFET (metal oxide semiconductor field effect transistor), the semiconductor laser device, an external modulating signal circuit, a compensating current control circuit, a compensating current feedback circuit, a compensating current sampling resistor, a compensating current MOSFET and a compensating loop load. The constant-current complementary current drive and control circuit has the advantages that the stability of output current of a high-power and high-current semiconductor laser driver is improved greatly, total output current of the semiconductor laser driver is in a constant-current state through an external high-frequency modulation signal, and fluctuation of total current of a power supply is reduced, so that the stability and the reliability of the whole laser device driver are improved.
Description
Technical field
The present invention relates to a kind of constant-current complementary control circuit of high-power semiconductor laser device, particularly a kind of constant-current complementary control circuit of high-power semiconductor laser device having external high frequency modulation signal and control, relates to the field such as electronics and photoelectron.
Background technology
The range of application of semiconductor laser covers whole opto-electronics, has become the core technology of current photoelectron science.Because the volume of semiconductor laser is little, structure is simple, conversion efficiency is high, the life-span is long, be easy to modulation and the advantage such as price is cheaper, it is applied widely at present in optoelectronic areas, comprises the various fields such as industry, military affairs, medical treatment, communication.Current high power semiconductor lasers and high-power semiconductor laser pump solid state laser are in materials processing, laser marking, laser printing, laser scanning, laser ranging, laser storage, laser display, the civil areas such as illumination, laser medicine, and the many-side such as laser target shooting, laser guidance, laser night vision, laser weapon is all used widely.
High power semiconductor lasers is a kind of semiconductor device of high power density photoelectric conversion efficiency; but device itself is for the poor ability of electric current and voltage surge impact; small voltage and curent change all can cause the very big change of laser merit power stage; the stability of the direct crisis device of this change and useful life thereof, therefore the electric current and voltage ripple of the driving power of noise spectra of semiconductor lasers has high requirement in actual applications.Stability, reliability, fail safe are the keys of high power semiconductor lasers Drive Control Technique.Stability determines the purity of the stable of laser output power and spectrum; Reliability determines the permanently effective operation of laser; Fail safe determines that laser is not destroyed under various fortuitous event.
Although and existing high power semiconductor lasers driver can realize electric current at the current constant control of tens amperes, be difficult to the current constant control meeting more big current completely, when particularly there is high frequency modulated.
Summary of the invention
The object of the present invention is to provide a kind of constant-current complementary control circuit of high-power semiconductor laser device with external high frequency modulation, adopt two-way current closed-loop control circuit mode stable output electric current, guarantee laser long-term safe, stable, run reliably; Have the ability driving semiconductor laser array, drive current up to more than hundreds of amperes, and can have very high reliability and security; Can set operating current and the overcurrent protection threshold value of semiconductor laser accurately, noise spectra of semiconductor lasers provides further protection; Adopt the aluminium base wire laying mode of MOSFET multitube parallel, improve area of dissipation and the radiating efficiency of power body, improve the stability of semiconductor laser drive; Adopt the flow equalize technology of MOSFET multitube parallel, strengthen the current balance of multitube parallel.
The present invention realizes the technical scheme that above object takes:
A kind of constant-current complementary control circuit of high-power semiconductor laser device comprises: laser current control circuit (11), laser current feedback circuit (13), semiconductor laser (14), laser current control MOSFET(15), laser current sampling resistor (16), offset current sampling resistor (17), compensating current control MOSFET(18), compensation circuit load (19), compensating current control circuit (21) and compensation current feedback circuit (23); Described semiconductor laser (14) respectively with power supply and laser current control MOSFET(15) drain electrode be connected, laser current control MOSFET(15) source electrode serial connection laser current sampling resistor (16) hold with being connected to.Described compensation circuit load (19) is connected on power supply and compensating current control MOSFET(18 respectively) drain electrode between, compensating current control MOSFET(18) source electrode hold with being connected to through offset current sampling resistor (17); The differential signal at offset current sampling resistor (17) two ends is amplified by compensation current feedback circuit (23) and is fed back to compensating current control circuit (21), compared by differential amplification with external modulation signal (20), produce error signal deliver to compensating current control MOSFET(28) grid offset current is regulated, realize the control of offset current.The differential signal of described offset current sampling resistor (17) is sent to laser current feedback circuit (13), the laser current signal plus gathered with laser current sampling resistor (6), feed back to laser current control circuit (11) again, compared by differential amplification with laser current preset signal (10), the error signal produced is used for controlling laser current controls MOSFET(15) grid to regulate laser current, realize the constant current driving under external high frequency modulation signal control model.
Described laser current control MOSFET(15) and compensating current control MOSFET(18) adopt high-power metallic film oxide field-effect transistor;
Described laser current control MOSFET(15) and compensating current control MOSFET(18) adopt multitube parallel pattern;
Described compensation circuit load can be power resistor, and resistance is 0-10 Ω, or electronic refrigerating sheet;
Described current sampling resistor R15 and R35 is 1m Ω ~ 50m Ω;
The resistance such as MOSFET grid compensation of delay resistance R11, R16, R32, R36 are 10 Ω ~ 20 Ω; R6 and C1, C7 and R25 form MOSFET grid control signal filter circuit, and the resistance of R6, R25 is 4.7K Ω ~ 12K Ω; The capacitance of C1, C7 is 10nF ~ 330nF;
The sampled signal of offset current sampling resistor (17) feeds back in compensation current feedback circuit (23) laser current feedback circuit (13) simultaneously;
Laser current feedback circuit (13) is differential amplifier circuit with the feedback circuit in compensation current feedback circuit (23);
Laser current loop and offset current loop form electric current complementary parallel pattern.
Laser current MOSFET(15) with offset current MOSFET(18) in MOSFET be aluminium base wire laying mode.
The invention has the advantages that:
Adopt two-way current closed-loop complementary control circuits mode, realize when the Output optical power of laser is synchronous with external high frequency control signal, power source loads keeps constant current mode;
Adopt the aluminium base wire laying mode of MOSFET multitube parallel, enhance the output current of driver and the radiating efficiency of MOSFET greatly, there is very high reliability and security;
Adopt the flow equalize technology of MOSFET multitube parallel, the MOSFET often organized will carry out sorting through MOSFET sorter, the same an array that is put into of parameter similar drives, and the control signal compensation of delay resistance of series connection one 10 Ω ~ 20 Ω before the grid of each MOSFET, can the Simultaneous Switching of effective control MOSFET array, strengthen the current balance of multitube parallel further;
Current Feedback Control Circuit adopts differential amplifier circuit, enhances the common-mode rejection ratio of current sample, greatly improves the precision of current sample, further increase the stability of driver output current;
Have the driving force of large power semiconductor laser array, drive current can reach more than hundreds of amperes, and has very high reliability and security;
Can set operating current and the overcurrent protection electric current of semiconductor laser accurately, noise spectra of semiconductor lasers is further protected.
[accompanying drawing explanation]
Fig. 1 is the theory diagram of constant-current complementary control circuit of high-power semiconductor laser device of the present invention;
Fig. 2 is laser current feedback circuit schematic diagram of the present invention.
Fig. 3 is compensation current feedback circuit theory diagrams of the present invention
Fig. 4 is laser current feedback reference voltage circuit theory diagrams of the present invention
Fig. 5 is laser current protective circuit of the present invention and control signal D/A transfer principle figure;
Fig. 6 is offset current protective circuit of the present invention and control signal D/A transfer principle figure;
Fig. 7 is external modulation signal control circuit schematic diagram of the present invention;
Fig. 8 is laser current control circuit schematic diagram of the present invention;
Fig. 9 is compensating current control circuit theory diagrams of the present invention;
Figure 10 is laser current circuit theory figure of the present invention;
Figure 11 is that the present invention adopts power resistor as the offset current loop of compensation circuit load.
Figure 12 is that the present invention adopts TEC as the offset current loop of compensation circuit load.
Embodiment
Below in conjunction with Figure of description, circuit structure of the present invention is described further.
Embodiment 1:
As shown in Figure 1, constant-current complementary control circuit of high-power semiconductor laser device of the present invention comprises:
Laser current control circuit (11), laser current feedback circuit (13), semiconductor laser (14), laser current control MOSFET(15), the sampling of laser current sampling (16), offset current (17), compensating current control MOSFET(18), compensation circuit load (19), compensating current control circuit (21) and compensation current feedback circuit (23); Described semiconductor laser (14) respectively with power supply and laser current control MOSFET(15) drain electrode be connected, laser current control MOSFET(15) source electrode serial connection laser current sampling resistor (16) to ground end; Described compensation circuit load (19) is connected on power supply and compensating current control MOSFET(18 respectively) drain electrode between, compensating current control MOSFET(18) source electrode hold with being connected to through offset current sampling resistor (17); The differential signal at offset current sampling resistor (17) two ends is amplified by compensation current feedback circuit (23) and is fed back to compensating current control circuit (21), compared by differential amplification with external modulation signal (20), produce error voltage signal feed back to compensating current control MOSFET(28) grid offset current is regulated, realize the control of offset current.The sampled signal of described offset current sampling resistor (17) is sent to laser current feedback circuit (13), the laser current signal plus gathered with laser current sampling resistor (6), and feed back to laser current control circuit (11), compared by differential amplification with laser current preset signal (10), the error voltage signal produced is used for controlling laser current controls MOSFET(15) grid laser current is regulated, realize the constant current driving under external high frequency modulation signal control model.
Embodiment 2
As shown in Figure 2, laser current feedback circuit is by operational amplifier U2B, resistance R20, R27, R26, R21, R28, R33, the differential amplifier circuit that electric capacity C8, C11 are formed.The ground end that LD40A_SHUNT+ is connected to the anode of laser current sampling resistor R15, LD40A_SHUNT-is connected to laser current sampling resistor R15; Resistance R21, R28 and electric capacity C11 form low-pass first order filter; Resistance R33 and electric capacity C11 forms second-order low-pass filter; The sampling with high precision of this circuit realiration laser current amplifies.
Embodiment 3
As shown in Figure 3, compensation current feedback circuit is by operational amplifier U2C, resistance R22, R30, R29, R23, R31, R34, the differential amplifier circuit that electric capacity C9, C12 are formed.The ground end that LD30A_SHUNT+ is connected to the anode of offset current sampling resistor R35, LD30A_SHUNT-is connected to offset current sampling resistor R35; Resistance R23, R31 and electric capacity C12 form low-pass first order filter; Resistance R34 and electric capacity C12 forms second-order low-pass filter; The sampling with high precision of this circuit realiration offset current amplifies.
Embodiment 4
As shown in Figure 4, the summation amplifying circuit that laser current feedback reference voltage circuit is made up of operational amplifier U2A, resistance R18, R17, R19, R24 and power filtering capacitor C10, wherein laser current sampled feedback signal VREF_CUR40A and offset current sampled feedback signal VREF_CUR30A is connected to the in-phase end of U2A respectively by resistance R18 and R17, and laser current sampled feedback signal VREF_CUR40A and offset current sampled feedback signal VREF_CUR30A sues for peace to amplify and forms new laser diode current feedback control signal VREF_40A by this circuit realiration.
Embodiment 5
As shown in Figure 5; laser current protective circuit and control signal D/A change-over circuit comprise a D/A D/A converting circuit be made up of resistance R14 and electric capacity C5; for converting pwm signal to analog voltage signal, and a current foldback circuit be made up of comparator U1A, resistance R3, R5, R9 and power filtering capacitor C3.Wherein VREF_CUR40A is laser current sample circuit feedback voltage signal, and PWM_D40A is the pwm control signal of characteristic frequency duty ratio corresponding to laser rated current, and PWM_D40A can be produced by DSP and also can be produced by hardware circuit; PWM_A40A is the analog voltage signal that pwm control signal carries out after D/A conversion.
Embodiment 6
As shown in Figure 6; offset current protective circuit and control signal D/A change-over circuit comprise a D/A D/A converting circuit be made up of resistance R13 and electric capacity C4, and a current foldback circuit be made up of comparator U1B, resistance R2, R4, R8 and power filtering capacitor C2.Wherein VREF_CUR30A is offset current sample circuit feedback voltage signal, and PWM_D30A is the pwm control signal of characteristic frequency duty ratio corresponding to offset current rated current, and PWM_D30A can be produced by DSP and also can be produced by hardware circuit; PWM_A30A is the analog voltage signal that pwm control signal carries out after D/A conversion.
Embodiment 7
Embodiment 7 as shown in Figure 7, the control circuit of the external modulation signal that external modulation signal control circuit comprises NPN triode Q1, a PNP triode Q2, resistance R1, R7, R10, R12 form, the object of this circuit converts current compensation control simulation voltage signal PWM_A30A to Frequency Synchronization with external modulation signal Modulation.
Embodiment 8
As shown in Figure 8, laser current control circuit is made up of operational amplifier U3C, U2D, NPN triode Q3, PNP triode Q5, resistance R48, R49, R50, R55, R38, R37, R41, R46, R51, R54, R57 and electric capacity C14, C15.This circuit carries out differential amplification to laser current default control signal PWM_40A and current sample feedback signal VREF_40A, the in-phase end of U2D is connected to as reference voltage again by resistance R38, resistance R37, R41 form bleeder circuit, realize the Current amplifier of laser current control voltage signal, in order to drive laser current control MOSFET array.Wherein resistance R50, R55 and electric capacity C14 forms second order filter.
Embodiment 9
As shown in Figure 9, compensating current control circuit is made up of operational amplifier U3B, U3A, NPN triode Q4, PNP triode Q6, resistance R39, R40, R42, R43, R44, R45, R47, R52, R53, R56, R58 and electric capacity C13, C16.This circuit carries out differential amplification to compensating current control signal PWM_30A and current sample feedback signal VREF_CUR30A, error signal is connected to the in-phase end of U3A as reference voltage by resistance R40 again, resistance R39, R42 form bleeder circuit, realize the Current amplifier of compensating current control voltage signal, in order to drive compensating current control MOSFET array.Wherein resistance R45, R53 and electric capacity C13 forms second order filter.
Embodiment 10
As shown in Figure 10, laser current loop is made up of semiconductor laser LD1, diode D1, power MOSFET V1 ~ Vn, resistance R6, R11, R16, R15 and electric capacity C6, C1.Wherein diode D1 and electric capacity C6 is connected in parallel on semiconductor laser LD1 two ends and forms protective circuit; R15 is current sampling resistor; Resistance R6 and electric capacity C1 forms the noise filter circuit of drive control signal, protects power MOSFET V1 ~ Vn, prevents power MOSFET V1 ~ Vn because misleading of causing of the reason of noise; Resistance R11, R16 are gate drive signal current limliting and the delays time to control build-out resistor of power MOSFET V1 ~ Vn, and guaranteed output MOSFET V1 ~ Vn array can Simultaneous Switching.
Example 11
As shown in figure 11, power resistor formula current compensation loop is made up of power resistor R59, power MOSFET M1 ~ Mn, resistance R25, R32, R36, R35 and electric capacity C7.R35 is current sampling resistor; The resistance of power resistor is generally between 0-10 ohm; Resistance 25 and electric capacity C7 form the noise filter circuit of drive control signal, protect power MOSFET M1 ~ Mn, and what prevent power MOSFET M1 ~ Mn from causing because of the reason of noise misleads; Resistance R32, R36 are gate drive signal current limliting and the delays time to control build-out resistor of power MOSFET M1 ~ Mn, and guaranteed output MOSFET M1 ~ Mn array can Simultaneous Switching.When the shortcoming of this circuit is circuit working, power all consumes on power resistor R59, is not effectively utilized.For promoting the utilance of power supply, improve circuit as shown in example 14.
Example 12
As shown in figure 12, TEC is by electronic refrigerating sheet TEC as the circuit of compensation circuit load, and power MOSFET M1 ~ Mn, resistance R25, R32, R36, R35 and electric capacity C7 are formed.R35 is current sampling resistor; Resistance 25 and electric capacity C7 form the noise filter circuit of drive control signal, protect power MOSFET M1 ~ Mn, and what prevent power MOSFET M1 ~ Mn from causing because of the reason of noise misleads; Resistance R32, R36 are gate drive signal current limliting and the delays time to control build-out resistor of power MOSFET M1 ~ Mn, and guaranteed output MOSFET M1 ~ Mn array can Simultaneous Switching.When the advantage point of this circuit is circuit working, power major part consumes on electronic refrigerating sheet TEC, and TEC may be used for the active heat removal of laser, thus promotes the utilance of power supply.
Claims (8)
1. a constant-current complementary control circuit of high-power semiconductor laser device, comprise: be connected in the laser current loop between VDD-to-VSS end and offset current loop in parallel, described laser current loop comprises the semiconductor laser (14), the laser current control MOSFET(15 that are connected in series) and laser current sampling resistor (16), described offset current loop comprise be connected in series compensation circuit load (19), compensating current control MOSFET(18) and offset current sampling resistor (17); It is characterized by, the sampled signal of described offset current sampling resistor (17) is connected to compensating current control circuit (21), to compare through differential amplifier with external modulation signal (20) and produce compensating circuit control signal, be used for regulating compensating current control MOSFET(18), form a Closed-loop Constant-current control circuit; The sampled signal of described offset current sampling resistor (17) is fed back to Laser feedback circuit (13) by compensation current feedback circuit (23), sue for peace with the sampled signal of described laser current sampling resistor (16), feed back to laser current control circuit (11) more further, laser current control signal is obtained through differential amplification with laser current preset signal (10), and be used for regulating described laser current control MOSFET(15), form a Closed-loop Constant-current control circuit.
2. constant-current complementary control circuit of high-power semiconductor laser device as claimed in claim 1, is characterized in that: the sampled signal synchronous feedback of described offset current sampling resistor (17) is to compensation current feedback circuit (23) and laser current feedback circuit (13).
3. constant-current complementary control circuit of high-power semiconductor laser device as claimed in claim 1, is characterized in that: laser current loop and offset current loop form electric current complement mode, makes laser current and offset current sum keep constant.
4. constant-current complementary control circuit of high-power semiconductor laser device as claimed in claim 1, is characterized in that: described compensation circuit load (19) is power resistor, and resistance is 0-10 ohm.
5. constant-current complementary control circuit of high-power semiconductor laser device as claimed in claim 1, is characterized in that: described compensation circuit load (19) is electronic refrigerating sheet.
6. constant-current complementary control circuit of high-power semiconductor laser device as claimed in claim 1, is characterized in that: described laser current control MOSFET(15) and compensating current control MOSFET(18) be multiple MOSFET pipe paralleling model.
7. constant-current complementary control circuit of high-power semiconductor laser device as claimed in claim 1, is characterized in that: laser current control MOSFET(15) and compensating current control MOSFET(18) adopt aluminium base wire laying mode.
8. constant-current complementary control circuit of high-power semiconductor laser device as claimed in claim 1, is characterized in that: laser current sampling resistor (16) is respectively 1m Ω ~ 50m Ω with the resistance of offset current sampling resistor (17).
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| CN106384933A (en) * | 2015-09-11 | 2017-02-08 | 北京特安电源科技有限公司 | Semiconductor laser driving power supply possessing open circuit protection function |
| CN106384934A (en) * | 2015-09-11 | 2017-02-08 | 北京特安电源科技有限公司 | Realization method of multipath semiconductor laser driving power supply |
| CN108683075A (en) * | 2018-04-24 | 2018-10-19 | 杭州科雷机电工业有限公司 | A kind of high current high frequency modulated laser Constant-power drive circuit and control method |
| CN111010021B (en) * | 2019-11-14 | 2021-06-22 | 华为技术有限公司 | Load line circuit and electronic equipment |
| CN112332212B (en) * | 2020-10-27 | 2022-06-10 | 深圳麦格米特电气股份有限公司 | Laser constant current drive circuit and laser projection display device |
| CN112421376B (en) * | 2020-11-20 | 2021-11-26 | 上海飞博激光科技有限公司 | High-power high-speed laser waveform generating device with synchronization function |
| CN114243440B (en) * | 2021-12-09 | 2024-01-12 | 武汉光迅电子技术有限公司 | EDFA pump laser control method and device |
| CN114326505A (en) * | 2021-12-29 | 2022-04-12 | 杭州电子科技大学 | Multi-module cooperative control door driving system based on three-level PCB (printed circuit board) stack structure |
| CN114438465B (en) * | 2022-02-18 | 2023-04-21 | 中国工程物理研究院流体物理研究所 | Fast response power supply protection circuit for high-power pulse magnetron sputtering load arcing |
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Address after: 210046 Nanjing economic and Technological Development Zone, Jiangsu, Chi Chi Road, Hing Chi 6-3 science and Technology Park, building A, floor 10 Patentee after: Nanjing Nuoweier Photoelectric System Co., Ltd. Patentee after: Beijing Waiteksin Advanced Technology Co.,Ltd. Patentee after: Capital Normal Univ. Address before: 501 room 8, No. 210038, Heng Fei Road, Nanjing economic and Technological Development Zone, Nanjing, Jiangsu Patentee before: Nanjing Nuoweier Photoelectric System Co., Ltd. Patentee before: Beijing Waiteksin Advanced Technology Co.,Ltd. Patentee before: Capital Normal Univ. |
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