CN108617061B - Drive current adjusting device - Google Patents
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- CN108617061B CN108617061B CN201611145402.6A CN201611145402A CN108617061B CN 108617061 B CN108617061 B CN 108617061B CN 201611145402 A CN201611145402 A CN 201611145402A CN 108617061 B CN108617061 B CN 108617061B
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Abstract
The invention discloses a driving current adjusting device which can automatically adjust the driving current of a triode according to the line voltage at two ends of a sampling resistor. The variable resistance module generates an equivalent resistance according to the line voltage sampled from the two ends of the sampling resistor by the sampling module, and the linear driving module automatically adjusts the driving current of the triode according to the equivalent resistance generated by the variable resistance module. The triode is ensured to be in the optimal driving current state in the full voltage range. Compared with the known fixed current driving mode and the linear driving mode, the efficiency of the invention is improved.
Description
Technical Field
The invention relates to the field of AC-DC switching power supply driving, in particular to a driving current adjusting device.
Background
In the field of AC-DC switching power supply driving, metal oxide semiconductor field effect transistors (MOS transistors) and triodes are generally used for driving. Because the cost of the triode is far lower than that of the MOS tube and the high-temperature characteristic of the triode is superior to that of the MOS tube, more and more switching power supplies driven by the triode are adopted at present. However, the triode has extremely strict requirements on the driving current, the consumption of chip power supply is increased due to the overlarge driving current, and the saturation voltage drop of the triode is increased due to the fact that the triode cannot enter a deep saturation region due to the undersize driving current.
The other is a linear driving mode, as shown in fig. 1, a current I1 flowing through a power NPN triode is a current flowing through an external primary inductor L P, when a current I1 linearly increases, a voltage Vin at both ends of a sampling resistor Rcs also linearly increases, and a current flowing through a resistor R is adjusted according to a line voltage Vin and the resistor R, and then the current flowing through a MOS transistor P11 and a MOS transistor P12 is controlled, so that linear driving is realized.
Disclosure of Invention
In order to solve the above problems, the present invention provides a driving current adjusting device, which can automatically adjust a variable resistor according to the voltage of an equivalent line, and then adjust a driving current according to the voltage of the variable resistor, thereby achieving a full voltage input.
In order to achieve the above object, the present invention provides a driving current adjusting device, which can automatically adjust the driving current of a power NPN transistor according to the equivalent line voltage at two ends of a sampling resistor, and comprises:
the sampling module is used for sampling voltage of a sampling resistor connected in series with an emitting electrode of the power NPN triode to obtain equivalent line voltage and converting the equivalent line voltage into equivalent line current.
A variable resistance module that receives the equivalent line current from the sampling module and generates an equivalent resistance according to the equivalent line current; . Wherein the variable resistance module comprises:
the first negative feedback circuit receives the equivalent line current from the sampling module and outputs a control grid voltage according to the equivalent line current.
And the grid electrode of the first transistor receives the grid electrode control voltage, and the on resistance of the first transistor under the grid electrode control voltage is used as the equivalent resistance.
A linear drive module that generates a drive current to drive a power NPN transistor based on the equivalent resistance of the variable resistance module and the equivalent line voltage of an emitter of the power NPN transistor.
In the above driving current adjusting device, a relation formula between the driving current of the power NPN triode and the sampling resistor and the equivalent line voltage is as follows:
Iout=k×Ipeak×Rcs×Vin/K
wherein: iout is the driving current of the power NPN triode, Ipeak is the collector current flowing through the power NPN triode, Rcs is the resistance value of the sampling resistor, Vin is the equivalent line voltage, and K and K are proportionality coefficients.
The above-mentioned drive current adjusting apparatus, wherein the sampling module comprises:
and the sampling control unit is electrically connected between the sampling resistor and the emitter of the power NPN triode and is used for sampling the equivalent line voltage.
The first capacitor is electrically connected to the sampling control unit and grounded, and is used for holding the equivalent line voltage.
And the voltage-to-current unit is electrically connected to the sampling control unit and the first capacitor and used for converting the equivalent line voltage into the equivalent line current.
In the above driving current adjusting apparatus, the variable resistance module further includes a current reference unit, which receives the line current of the sampling module, performs low-pass processing on the line current, and provides the processed line current to the first negative feedback circuit.
The above drive current adjusting apparatus, wherein the first negative feedback circuit comprises:
a second transistor having a drain receiving the equivalent line current;
a third transistor having a drain electrically coupled to the source of the second transistor, the source of the third transistor being grounded, the gate of the third transistor being electrically coupled to the gate of the first transistor, the gate voltage of the third transistor being the gate control voltage generated by the first negative feedback circuit;
a first operational amplifier having a positive input terminal electrically connected to the low voltage reference unit, a negative input terminal electrically connected between the source of the second transistor and the drain of the third transistor, and an output terminal electrically connected to the gate of the second transistor;
the drain voltage of the third transistor is the voltage generated by the low-voltage reference unit, and the gate voltage of the third transistor is the voltage which makes the third transistor work at the drain voltage equal to the voltage generated by the low-voltage reference unit and the working current equal to the equivalent line current.
The above-mentioned drive current adjusting device, wherein the linear driving module comprises:
the second negative feedback circuit is electrically connected with an emitting electrode of the power NPN triode to obtain the equivalent line voltage, and generates an intermediate current according to the equivalent line voltage and the equivalent resistance generated by the variable resistance module;
a current conversion circuit converting the intermediate current generated by the second negative feedback circuit into the driving current.
In the above driving current adjusting device, the linear driving module further includes a fixed current unit electrically connected to the current converting circuit for providing an initial current of the power NPN transistor.
The above drive current adjusting apparatus, wherein the second negative feedback circuit comprises a second operational amplifier and a fourth transistor, wherein:
the positive input end of the second operational amplifier receives the equivalent line voltage, the negative input end of the second operational amplifier is electrically connected with the fourth transistor, and the output end of the second operational amplifier is electrically connected with the grid electrode of the fourth transistor;
the drain of the fourth transistor is connected in series with the current conversion circuit, the source of the fourth transistor is electrically connected with the negative input end of the second operational amplifier, and the grid of the fourth transistor is electrically connected with the output end of the second operational amplifier;
the intermediate current flows through the current conversion circuit and the fourth transistor which are arranged in series at the same time, and Im is Vin/Rout, wherein Im is the intermediate current, Vin is the equivalent line voltage, and Rout is the equivalent resistor.
In the above driving current regulator, the first transistor and the fourth transistor are connected in series, and the intermediate current flows through the current converting circuit, the fourth transistor and the first transistor which are connected in series at the same time;
the above drive current adjusting apparatus, wherein the current converting circuit comprises:
a fifth transistor having a drain electrically coupled to the second negative feedback circuit for connecting the current converting circuit in series with the second negative feedback circuit, wherein the intermediate current flows through the fifth transistor;
a sixth transistor, a gate of which is electrically connected to the gate and the drain of the fifth transistor, a source of the sixth transistor and a source of the fifth transistor are electrically connected to a power voltage for converting the intermediate current into the driving current, and a drain of the sixth transistor is electrically connected to a base of the power NPN transistor for transmitting the driving current to the power NPN transistor.
The above-mentioned driving current adjusting device, wherein the linear driving module further includes:
and the drain electrode of the seventh transistor is electrically connected with the drain electrode of the sixth transistor, and the source electrode of the seventh transistor is grounded.
A control logic unit electrically connected to the gates of the sixth transistor and the seventh transistor respectively for controlling the sixth transistor and the seventh transistor,
when the sixth transistor is turned on and the seventh transistor is turned off, the power NPN triode is turned on; when the sixth transistor is turned off and the seventh transistor is turned on, the power NPN triode is turned off.
In summary, the driving current adjusting device provided by the invention has the following beneficial effects: the variable resistance module replaces a resistor R for adjusting the driving current, equivalent resistors with different resistance values corresponding to different equivalent line voltages can be generated, the driving current of the power NPN triode is adjusted through the equivalent resistors with different resistance values, the driving current suitable for the current equivalent line voltage can be obtained, and therefore the power NPN triode is guaranteed to work in the best working state all the time.
Drawings
FIG. 1 is a schematic structural diagram of a linear driving current regulator according to the prior art;
FIG. 2 is a schematic structural diagram of a driving current adjusting device according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a driving current adjusting device according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a linear driving module of a driving current adjusting device according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a sampling module of a driving current adjusting apparatus according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of a variable resistance module of a driving current adjusting device according to an embodiment of the present invention.
Detailed Description
The technical solutions of the present invention are described in detail below with reference to the accompanying drawings and the embodiments, but the present invention is not limited thereto.
Referring to fig. 2, fig. 2 is a schematic structural diagram of a driving current adjusting device 10 according to an embodiment of the present invention, and as shown in fig. 2, the driving current adjusting device 10 includes a power transistor NPN, a sampling resistor Rcs, a linear driving module 11, a sampling module 12, and a variable resistance module 13, wherein a collector of the power transistor NPN is electrically connected to a primary inductor L P, so that a primary inductor current Ipeak flows into the power transistor NPN, one end of the sampling resistor Rcs is electrically connected to an emitter of the power transistor NPN, and the other end is grounded, so that an equivalent line voltage Vin is generated at two ends of the sampling resistor, and the equivalent line voltage Vin satisfies a formula (1):
Vin = Ipeak × Rcs (1)
the input terminal IN3 of the sampling module 12 is electrically coupled between the emitter of the power transistor NPN and the sampling resistor Rcs, and is configured to sample the equivalent line voltage Vin, and the sampling module 12 can output an equivalent line current Iin from the output terminal OUT2 according to the sampled equivalent line voltage Vin; the input terminal IN4 of the variable resistance module 13 receives the equivalent line current Iin from the output terminal OUT2 of the sampling module, and generates an equivalent resistance Rout at the output terminal OUT3 according to the magnitude of the equivalent line current Iin; then, the linear driving module 11 is electrically connected to the output port OUT3 through the input port IN2 to connect the variable resistance module IN series behind the linear driving module 11, and simultaneously, the driving current Iout is adjusted according to the equivalent line voltage Vin received from the input port IN1 and is output to the base of the power transistor NPN from the output port OUT 1.
Referring to fig. 3 and fig. 4, fig. 3 is a schematic structural diagram of a driving current adjusting device according to an embodiment of the present invention, and fig. 4 is a schematic structural diagram of a driving current adjusting device 11 according to an embodiment of the present invention; the sources of the transistors P5 and P6 are electrically connected and then electrically connected to the voltage VCC, the transistor P6 is actually formed by connecting k identical transistors in parallel (not shown in the figure), and since the gate of the transistor P5 is electrically connected to the gate of the transistor P6 and the drain of the transistor P5 is electrically connected to the drain of the transistor P5, the current I flowing through the transistor P6 is enabled to flowP6Satisfies formula (2):
IP6= IP5×k (2)
in the preferred embodiment of the present invention, the number of transistors constituting the transistor P6 ranges from 60 to 100, and therefore, the scaling factor k is an integer between 60 and 100.
The drain of the transistor N4 is electrically connected to the drain of the transistor P5, and the fixed current unit 111 is electrically connected between the drain of the transistor N4 and the drain of the transistor P5. In the preferred embodiment of the present invention, the fixed current unit 111 provides the driving current adjusting device 10 with an initial driving current of a power transistor NPN with zero temperature coefficient; the positive input end of the operational amplifier a2 is electrically connected to the input port IN1, and receives the equivalent line voltage Vin, the output port of the operational amplifier a2 is electrically connected to the gate of the transistor N4, the negative input end of the operational amplifier a2 is electrically connected to the source of the transistor N4, and the voltage at the source of the transistor N4 (i.e., the input port IN2) is also the equivalent line voltage Vin according to the virtual short characteristic of the closed-loop operational amplifier; the drain of the transistor N7 is electrically connected to the drain of the transistor P6, and the source of the transistor N7 is grounded; since the output port OUT1 is electrically connected to the drain of the transistor P6, the current I is enabledP6Namely, the drive current Iout output from the output port, namely:
Iout = Ip6(3)
in addition, the control logic unit 112 is electrically connected to the gates of the transistors P6 and N7, respectively. In the preferred embodiment of the present invention, the control logic unit 112 can control the transistors P6 and N7. When the transistor P6 is turned on and the transistor N7 is turned off, the power transistor NPN is turned on, and when the transistor P6 is turned off and the transistor N7 is turned on, the power transistor NPN is turned off.
Referring to fig. 3 and fig. 5, fig. 5 is a schematic structural diagram of a sampling module 12 of a driving current adjusting device according to an embodiment of the present invention; IN the preferred embodiment of the present invention, the sampling control unit 121 is configured to adjust a sampling timing sequence, so that the sampling module 12 samples the line voltage Vin at a predetermined timing sequence; one end of the capacitor C1 is electrically coupled between the sampling control unit 121 and the voltage-to-current unit 122, and the other end is grounded, the capacitor C1 is used for holding the equivalent line voltage Vin sampled by the control unit 121; the voltage-to-current unit 122 converts the equivalent line voltage Vin held by the capacitor C1 into an equivalent line current Iin, and outputs the equivalent line current Iin from the output port OUT 2.
Referring to fig. 3 and fig. 6, fig. 6 is a schematic structural diagram of the variable resistance module 13 of the driving current adjusting device according to an embodiment of the invention; the input port IN4 of the variable resistance module 13 receives the equivalent line current Iin from the sampling module 12 and transmits the equivalent line current to the drain of the transistor N2 through the current reference unit 131. In the present embodiment, when the equivalent line current passes through the current reference section 131, the low-pass filter may be used to perform low-pass processing on the equivalent line current Iin, thereby removing high-frequency noise in the equivalent line current Iin.
The source of the transistor N2 is electrically connected to the drain of the transistor N3, the gate of the transistor N2 is electrically connected to the output of the operational amplifier a1, and the negative input of the operational amplifier a1 is electrically connected between the source of the transistor N2 and the drain of the transistor N3, so that the operational amplifier a1, the transistor N2 and the transistor N3 form a negative feedback system. Due to the virtual short feature of the closed-loop operational amplifier, the drain voltage of the transistor N3 is the voltage generated by the low voltage reference unit 132 input to the positive input of the operational amplifier a 2.
In the preferred embodiment of the present invention, the low voltage reference unit 132 generates a low voltage zero temperature drift reference, the gate of the transistor N3, the gate of the transistor N1 are electrically connected to the current reference unit 131 and the drain of the transistor N2, and the source of the transistor N1 and the source of the transistor N3 are grounded. At this time, the gate voltage of the transistor N2 is a voltage that makes the transistor N3 operate at a drain voltage equal to the voltage generated by the low voltage reference unit 131, and an operating current equal to the current output by the current reference unit 131. When the transistor works in the resistance area, the equivalent resistance of the transistor is inversely proportional to the gate-source voltage of the transistor, namely the higher the gate-source voltage is, the lower the equivalent resistance of the transistor is, and conversely, when the gate-source voltage is, the lower the equivalent resistance of the transistor is. For the transistor N1, since the source of the transistor N1 is grounded, the gate-source voltage of the transistor N1 is the gate voltage thereof, and since the gate of the transistor N1 is electrically coupled to the gate of the transistor N3, the gate voltage of the transistor N1 is the same as the gate voltage of the transistor N3, so that the equivalent resistance of the transistor N1 is controlled by the gate voltage of the transistor N3. The gate voltage of the transistor N3 is controlled by the current output by the current reference unit 131. The current outputted by the current reference unit 131 is controlled by the current Iin outputted by the sampling unit 12, and the current Iin outputted by the sampling unit 12 is proportional to the equivalent line voltage Vin across the sampling resistor Rcs sampled by the sampling unit 12, i.e. the equivalent resistance of the transistor N1 is controlled by the equivalent line voltage Vin.
In the embodiment of the invention, the equivalent resistance of the transistor N1 is output to the output terminal OUT3 as the equivalent resistance Rout generated by the variable resistance module 13. Therefore, the equivalent resistance Rout is inversely proportional to the equivalent line voltage Vin, which satisfies formula (4):
Rout = K / Vin (4)
the proportionality coefficient K is a constant proportional to the NPN output power of the power transistor, and in a preferred embodiment of the present invention, the proportionality coefficient K is in a range of 8.0-12.0.
Referring again to FIG. 3, the transistors P5, N4 andthe transistor N1 is connected in series, so that the current I flowing through the transistor P5P5With the current I flowing through transistor N1N1The same, namely:
IN1= IP5(5)
meanwhile, since the voltage at the source of the transistor N4 is the equivalent line voltage Vin, i.e. the voltage at the drain of the transistor N1 is also the equivalent line voltage Vin, the current IN1Formula (6) is also satisfied:
IN1= Vin / Rout (6)
combining the formulas (1), (2), (3), (4), (5) and (6), the driving current Iout of the NPN of the power triode can be obtained to satisfy the formula (7):
Iout = k×Ipeak×Rcs×Vin / K (7)
in summary, the driving current adjusting device of the present invention realizes linear driving with different slopes in the full voltage range, and the magnitude of the driving current Iout is directly proportional to the magnitude of the equivalent line voltage Vin. When the power triode NPN is input with high equivalent line voltage, the driving current Iout is correspondingly increased, and when the power triode NPN is input with low equivalent line voltage, the driving current Iout is correspondingly decreased. The NPN of the power triode is always kept in the optimal driving current state in the full voltage range, and therefore the self-adaptive driving of the power triode is achieved. In addition, in the present embodiment, the transistors N1, N2, N3, N4, N7, P5 and P6 all use MOS transistors, but the invention is not limited thereto, and those skilled in the art can use different types of transistor elements as required to achieve the same effect.
The above-mentioned embodiments are merely preferred embodiments of the present invention, which is not intended to limit the present invention, and those skilled in the art can make various changes and modifications according to the present invention without departing from the spirit and scope of the present invention, and such changes and modifications should fall within the scope of the appended claims.
Claims (10)
1. A drive current adjustment apparatus comprising:
the sampling module is used for sampling voltage of a sampling resistor connected in series with an emitter of the power NPN triode to obtain equivalent line voltage and converting the equivalent line voltage into equivalent line current;
a variable resistance module that receives the equivalent line current from the sampling module and generates an equivalent resistance according to the equivalent line current, the variable resistance module comprising:
a first negative feedback circuit receiving the equivalent line current from the sampling module and outputting a gate control voltage according to the equivalent line current; and
a first transistor, a gate of which receives the gate control voltage and takes an on-resistance of the first transistor under the gate control voltage as the equivalent resistance; and
a linear drive module to generate a drive current to drive the power NPN transistor based on the equivalent resistance of the variable resistance module and the equivalent line voltage of an emitter of the power NPN transistor,
wherein the first negative feedback circuit comprises:
a second transistor having a drain receiving the equivalent line current;
a third transistor having a drain electrically coupled to the source of the second transistor, the source of the third transistor being grounded, the gate of the third transistor being electrically coupled to the gate of the first transistor, the gate voltage of the third transistor being the gate control voltage generated by the first negative feedback circuit; and
a first operational amplifier having a positive input terminal electrically connected to the low voltage reference unit, a negative input terminal electrically connected between the source of the second transistor and the drain of the third transistor, and an output terminal electrically connected to the gate of the second transistor; wherein the drain voltage of the third transistor is a voltage generated by the low voltage reference cell, the gate voltage of the third transistor is a voltage that causes the third transistor to operate at a drain voltage equal to the voltage generated by the low voltage reference cell and at an operating current equal to the equivalent line current,
wherein the first, second and third transistors are NMOS transistors.
2. The driving current regulating device according to claim 1, wherein the driving current of the power NPN transistor is related to the sampling resistance and the equivalent line voltage by the equation:
Iout = k×Ipeak×Rcs×Vin / K
wherein: iout is the driving current of the power NPN triode, Ipeak is the collector current flowing through the power NPN triode, Rcs is the resistance value of the sampling resistor, Vin is the equivalent line voltage, a proportionality coefficient K is an integer between 60 and 100, the proportionality coefficient K is a constant in direct proportion to the output power of the power NPN triode, and the range of K is 8.0-12.0.
3. The drive current adjustment device of claim 1, wherein the sampling module comprises:
the sampling control unit is electrically connected between the sampling resistor and the emitter of the power NPN triode and is used for sampling the equivalent line voltage;
a first capacitor electrically coupled to the sampling control unit and grounded for holding the equivalent line voltage;
and the voltage-to-current unit is electrically connected to the sampling control unit and the first capacitor and used for converting the equivalent line voltage into the equivalent line current.
4. The driving current adjusting apparatus according to claim 1, wherein the variable resistance module further includes a current reference unit, which receives the equivalent line current of the sampling module, performs low pass processing on the equivalent line current, and provides the processed equivalent line current to the first negative feedback circuit.
5. The drive current adjustment device according to claim 1, wherein the linear drive module includes:
the second negative feedback circuit is electrically connected with an emitting electrode of the power NPN triode to obtain the equivalent line voltage, and generates an intermediate current according to the equivalent line voltage and the equivalent resistance generated by the variable resistance module;
a current conversion circuit converting the intermediate current generated by the second negative feedback circuit into the driving current.
6. The driving current regulating device according to claim 5, wherein the linear driving module further comprises a fixed current unit electrically coupled to the current converting circuit for providing an initial current of the power NPN transistor.
7. The drive current adjustment device of claim 5, wherein the second negative feedback circuit comprises a second operational amplifier and a fourth transistor, the fourth transistor being an NMOS transistor, wherein:
the positive input end of the second operational amplifier receives the equivalent line voltage, the negative input end of the second operational amplifier is electrically connected with the fourth transistor, and the output end of the second operational amplifier is electrically connected with the grid electrode of the fourth transistor; and is
The drain of the fourth transistor is connected in series with the current conversion circuit, the source of the fourth transistor is electrically connected with the negative input end of the second operational amplifier, and the grid of the fourth transistor is electrically connected with the output end of the second operational amplifier;
the intermediate current flows through the current conversion circuit and the fourth transistor which are arranged in series at the same time, and Im = Vin/Rout is satisfied, wherein Im is the intermediate current, Vin is the equivalent line voltage, and Rout is the equivalent resistor.
8. The drive current adjusting apparatus according to claim 7, wherein the first transistor and the fourth transistor are connected in series, and the intermediate current flows through the current converting circuit, the fourth transistor and the first transistor arranged in series at the same time.
9. The drive current adjustment device according to claim 5, wherein the current conversion circuit includes:
a fifth transistor, wherein the fifth transistor is a PMOS transistor, the drain of the fifth transistor is electrically connected to the second negative feedback circuit, and the fifth transistor is used for connecting the current converting circuit and the second negative feedback circuit in series, and the intermediate current flows through the fifth transistor;
and the sixth transistor is a PMOS transistor, a gate of the sixth transistor is electrically connected with a gate and a drain of the fifth transistor, a source of the sixth transistor and a source of the fifth transistor are electrically connected with a power voltage, and is used for converting the intermediate current into the driving current, and a drain of the sixth transistor is electrically connected with a base of the power NPN triode, and is used for transmitting the driving current to the power NPN triode.
10. The drive current adjustment device of claim 9, wherein the linear drive module further comprises:
a seventh transistor, which is an NMOS transistor, having a drain electrically connected to the drain of the sixth transistor, and a source grounded;
a control logic unit electrically connected to the gates of the sixth transistor and the seventh transistor respectively for controlling the sixth transistor and the seventh transistor,
when the sixth transistor is turned on and the seventh transistor is turned off, the power NPN triode is turned on; when the sixth transistor is turned off and the seventh transistor is turned on, the power NPN triode is turned off.
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CN114488873B (en) * | 2021-12-24 | 2024-05-03 | 深圳市联洲国际技术有限公司 | Control circuit and device |
CN114499429B (en) * | 2022-02-14 | 2022-08-09 | 揭阳市科和电子实业有限公司 | Triode chip identification gain device |
CN114499130B (en) * | 2022-04-14 | 2022-07-22 | 深圳市思远半导体有限公司 | Self-adaptive constant-on-time step-down direct-current converter |
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