CN109326954B - Laser high-speed driving module for quantum communication single photon source - Google Patents
Laser high-speed driving module for quantum communication single photon source Download PDFInfo
- Publication number
- CN109326954B CN109326954B CN201710639949.XA CN201710639949A CN109326954B CN 109326954 B CN109326954 B CN 109326954B CN 201710639949 A CN201710639949 A CN 201710639949A CN 109326954 B CN109326954 B CN 109326954B
- Authority
- CN
- China
- Prior art keywords
- triode
- current
- laser
- driving chip
- single photon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004891 communication Methods 0.000 title claims abstract description 26
- 230000003287 optical effect Effects 0.000 claims abstract description 9
- 238000001228 spectrum Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 description 4
- 230000008033 biological extinction Effects 0.000 description 3
- 239000008358 core component Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0428—Electrical excitation ; Circuits therefor for applying pulses to the laser
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a laser high-speed driving module for a quantum communication single photon source, which comprises a current source driving chip U1 and a triode Q1, wherein the output end of the current source driving chip U1 is connected with the base electrode of the triode Q1, the collector electrode of the triode Q1 is connected with the cathode of a laser diode LD, the anode of the laser diode LD is connected with a power supply VCC, and the emitter electrode of the triode Q1 is grounded; the current source driving chip U1 converts an externally input narrow pulse voltage signal into a corresponding narrow pulse current signal for output, and the current signal controls the switch of the triode Q1, thereby controlling the switch of the laser diode LD. The invention has the following advantages: the method can be better applied to quantum communication single photon sources, is suitable for application occasions with high bandwidth, high speed and large driving current requirements, and ensures that the quality and spectrum of optical signals of the quantum communication single photon sources meet the requirements.
Description
Technical Field
The invention relates to a driving circuit, in particular to a laser high-speed driving module for a quantum communication single photon source.
Background
At present, a single photon is used as a carrier of quantum information in a quantum communication system, a semiconductor laser plays a vital role as a core component of the single photon source, the single photon source applied to the field of quantum communication at present, and a laser driving module of the core of the single photon source is generally built by a discrete device or driven by an integrated chip, and mainly comprises the following three technical schemes:
1. a current source drive built by an operational amplifier and a MOSFET is adopted;
2. a mirror image current source circuit built by a triode is adopted for driving;
3. and driving by adopting a laser integrated driving chip.
The three technical schemes of the prior art about the driving of the laser firstly adopt the current source driving built by the operational amplifier and the MOSFET, and the current operational amplifier cannot achieve high bandwidth, so that the driving cannot meet the high-speed single photon source driving; the mirror current source built by the triode has parasitic parameters to reduce the driving bandwidth, and meanwhile, the discrete driving is greatly influenced by the environment to cause poor stability of the driving circuit; the integrated driving chip is adopted for driving, the current driving chip is applied to classical communication, the driving current is small, the extinction ratio of the optical signal is small, and the requirements cannot be met.
Therefore, the prior art cannot meet the requirements of high bandwidth, high speed, high extinction ratio and large current drive, and cannot ensure that the quality and spectrum of the quantum communication single photon source optical signal meet the requirements.
Disclosure of Invention
The invention aims to solve the technical problem of providing the high-speed driving module for the laser of the quantum communication single photon source, which can meet the requirements of high bandwidth, high speed, high extinction ratio and large current driving and ensure the quality and the spectrum of the optical signal of the quantum communication single photon source.
The invention solves the technical problems through the following technical scheme: the high-speed driving module of the laser used for quantum communication single photon source comprises a current source driving chip U1 and a triode Q1, wherein the output end of the current source driving chip U1 is connected with the base electrode of the triode Q1, the collector electrode of the triode Q1 is connected with the cathode of a laser diode LD, the anode of the laser diode LD is connected with a power supply VCC, and the emitter of the triode Q1 is grounded;
the current source driving chip U1 converts an externally input narrow pulse voltage signal into a corresponding narrow pulse current signal for output, and the current signal controls the switch of the triode Q1, thereby controlling the switch of the laser diode LD.
Further preferably, the highest speed of the current source driving chip U1 reaches 10Gbps.
Further preferably, the cut-off frequency of the triode Q1 reaches 55GHz.
Further preferably, the laser high-speed driving module further comprises resistors R1 and R2, the output end of the current source driving chip U1 is connected with one end of the resistors R1 and R2 and the base electrode of the triode Q1, the other end of the resistor R1 is connected with the power supply VCC, and the other end of the resistor R2 is grounded.
Further preferably, the laser high-speed driving module further comprises a resistor R3, and a collector of the triode Q1 is connected with a cathode of the laser diode LD through the resistor R3.
Further preferably, the IN end of the current source driving chip U1 is used for inputting a narrow pulse driving electric signal, the SET end of the driving chip U1 is used for setting the magnitude of the driving current, and when the input signal is at a high level, the output port of the current source driving chip U1 is IN a disconnected state and no current exists; when the input signal IS low level, the output port of the current source driving chip U1 IS in a current-absorbing state, and the current IS at the output port passes through the input voltage V at the SET port SET Control with is=v SET * K, where K is a scaling factor.
Further preferably, the switch of the triode Q1 is controlled by the base voltage VB, the starting voltage of the triode Q1 is VT, when VB < VT, the triode Q1 is closed, and the laser diode LD does not output light; when VB is larger than or equal to VT, the triode Q1 is started, and the laser diode LD outputs an optical signal.
Further preferably, when the input signal is low, transistor Q1 is turned off, requiring VB<VT, since transistor Q1 is off, base current IB is 0 and base voltage VB satisfies the following relationship: 1) VCC-vb=i1×r1, 2) vb=i2×r2, 3) i1=is+i2, 4) is=v SET * K, wherein I1 is the current flowing through resistor R1, I2 is the current flowing through resistor R2, to satisfy VB<VT by setting V SET > VCC/(k×r1) -VT (r1+r2)/(k×r1×r2) turns off transistor Q1;
when the input signal IS at high level, the current IS at the output end of the current source driving chip U1 IS 0, and at this time, the triode Q1 IS turned on, vb=vt, and the base current IB of the triode Q1 satisfies the following relationship: 1) VCC-vt=i1×r1, 2) vt=i2×r2, 3) i1=i2+ib, from which ib= (VCC-VT)/R1-VT/R2 is derived.
Further preferably, when the input signal of the high-speed current source driving chip U1 is at a high level, the triode Q1 is turned on, and the current ild= (VCC-VLD-Vce)/R3 flowing through the resistor R3 on the laser branch corresponds to the light pulse intensity of the output response of the laser diode LD, where VLD is the voltage across the laser diode LD, and Vce is the voltage between the collector and the emitter of the triode Q1.
Further preferably, the resistor R3 is an adjustable resistor.
Compared with the prior art, the invention has the following advantages:
1. based on the technology of a high-speed current source driving chip and a high-bandwidth microwave triode, narrow pulse driving is realized;
2. based on the settable value of the output current IS of the current source driving chip, the control triode Q1 has different starting voltages, so that the driving circuit has stronger stability, and the light pulse output IS realized through the switch of the triode Q1;
3. setting a driving current by setting the resistance value of the resistor R3, wherein the driving current can be larger than that of the current semiconductor integrated driving chip;
the high-speed driving module can be better applied to quantum communication single photon sources, is suitable for application occasions with high bandwidth, high speed and large driving current requirements, and ensures that the quality and spectrum of optical signals of the quantum communication single photon sources meet the requirements.
Drawings
FIG. 1 is a circuit diagram of a laser high-speed drive module for a quantum communication single photon source of the present invention;
fig. 2 is a graph of the correspondence between the input electrical pulse and the output optical pulse in fig. 1.
Detailed Description
The following describes in detail the examples of the present invention, which are implemented on the premise of the technical solution of the present invention, and detailed embodiments and specific operation procedures are given, but the scope of protection of the present invention is not limited to the following examples.
Referring to fig. 1, the high-speed driving module of the laser for quantum communication single photon source of the present invention includes a current source driving chip U1 and a triode Q1. The output end of the current source driving chip U1 is connected with the base electrode of the triode Q1, the collector electrode of the triode Q1 is connected with the cathode of the laser diode LD, the anode of the laser diode LD is connected with the power supply VCC, and the emitter electrode of the triode Q1 is grounded.
The current source driving chip U1 converts an externally input narrow pulse voltage signal into a corresponding narrow pulse current signal to be output, and meanwhile, the current signal controls the switch of the triode Q1, so that the switch of the laser diode LD is controlled.
The IN end of the current source driving chip U1 is used for inputting a narrow pulse driving electric signal, and the SET end of the driving chip U1 is used for setting the magnitude of driving current.
As a more specific embodiment, the laser high-speed driving module further includes resistors R1 and R2. The output end of the current source driving chip U1 is connected with one ends of the resistors R1 and R2 and the base electrode of the triode Q1, the other end of the resistor R1 is connected with the power supply VCC, and the other end of the resistor R2 is grounded.
As a more specific embodiment, the laser high-speed driving module further includes a resistor R3, and the collector of the triode Q1 is connected to the cathode of the laser diode LD through the resistor R3.
The highest speed of the current source driving chip U1 can reach 10Gbps, the chip comprises an adjustable current source, and when an input signal is in a high level, an output port of the current source driving chip U1 is in a disconnected state, and no current exists; when the input signal IS low level, the output port of the current source driving chip U1 IS in a current-absorbing state, and the current IS at the output port can be controlled by the input voltage V at the SET port SET Control with is=v SET * K, wherein K is a proportionality coefficient, a specific K value is given on a chip manual aiming at different current source driving chips U1.
The cut-off frequency of the triode Q1 can reach 55GHz, the switch of the triode Q1 IS controlled by the base voltage VB, the magnitude of the base voltage VB IS determined by external bias resistors R1 and R2 and the current IS of the output end of the current source driving chip U1, the starting voltage of the triode Q1 IS VT, when VB IS smaller than VT, the triode Q1 IS closed, and the laser diode LD does not output light; when VB is larger than or equal to VT, the triode Q1 is started, and the laser diode LD outputs an optical signal.
Referring to fig. 2, further, when the input signal Vin is low levelTransistor Q1 is turned off, requiring VB<VT, since transistor Q1 is off, base current IB is 0 and base voltage VB satisfies the following relationship: 1) VCC-vb=i1×r1, 2) vb=i2×r2, 3) i1=is+i2, 4) is=v SET * K, wherein I1 is the current flowing through resistor R1, I2 is the current flowing through resistor R2, to satisfy VB<VT, combined with the above relation, is obtained by setting V SET > VCC/(K R1) -VT (R1+R2)/(K R1R 2) VB<VT to turn off the transistor Q1 by setting V SET The current IS at the output end of the current source driving chip U1 IS controlled so that when the input signal Vin IS at a low level, the triode Q1 IS turned off and simultaneously due to V SET Can be set so as to have different VT for different triodes and can be set with different V SET And the driving circuit has stronger stability.
Further, when the input signal Vin IS at a high level, the current IS at the output end of the current source driving chip U1 IS 0, and at this time, the triode Q1 IS turned on, vb=vt, and the base current IB of the triode Q1 satisfies the following relationship: 1) VCC-vt=i1×r1, 2) vt=i2×r2, 3) i1=i2+ib, from which ib= (VCC-VT)/R1-VT/R2 is derived.
The output light intensity of the laser diode LD is determined by the current ILD flowing through the resistor R3 on the branch where the laser diode LD is located, when the input signal Vin of the current source driving chip U1 is at a high level, the triode Q1 is turned on, and the current flowing through the resistor R3 on the branch of the laser is: ild= (VCC-VLD-Vce)/R3, VLD is the voltage across the laser diode LD, vce is the voltage between the collector and emitter of the triode Q1, and the corresponding light pulse intensity of the output response of the laser diode LD is adjustable, so the current ILD can be larger than the current driving current of the current semiconductor integrated driving chip because both the voltage VCC and the resistor R3 are adjustable.
Specifically, the speed of the current source driving chip U1 is 10Gbps, the triode Q1 adopts a low-noise high-gain microwave triode, the cut-off frequency is 55GHz, and the driving circuit can adapt to the application occasions with high bandwidth, high speed and large driving current requirements.
In a word, the invention is based on a high-speed current source driving chip and a high-bandwidth microwave triode, and can be better applied to quantum communication single photon sources as a driving module of a semiconductor laser.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the invention.
Claims (9)
1. The high-speed driving module of the laser for quantum communication single photon source is characterized by comprising a current source driving chip U1 and a triode Q1, wherein the output end of the current source driving chip U1 is connected with the base electrode of the triode Q1, the collector electrode of the triode Q1 is connected with the cathode of a laser diode LD, the anode of the laser diode LD is connected with a power supply VCC, and the emitter electrode of the triode Q1 is grounded;
the current source driving chip U1 converts an externally input narrow pulse voltage signal into a corresponding narrow pulse current signal to be output, and meanwhile, the current signal controls the switch of the triode Q1 so as to control the switch of the laser diode LD;
the laser high-speed driving module further comprises resistors R1 and R2, the output end of the current source driving chip U1 is connected with one ends of the resistors R1 and R2 and the base electrode of the triode Q1, the other end of the resistor R1 is connected with a power supply VCC, and the other end of the resistor R2 is grounded.
2. The high-speed driving module for a laser of a quantum communication single photon source according to claim 1, wherein the highest speed of the current source driving chip U1 is up to 10Gbps.
3. The high-speed driving module for a laser of a quantum communication single photon source according to claim 1, wherein the cut-off frequency of the triode Q1 reaches 55GHz.
4. The high-speed driving module for a laser of a quantum communication single photon source according to claim 1, wherein the high-speed driving module further comprises a resistor R3, and a collector of the triode Q1 is connected to a cathode of the laser diode LD through the resistor R3.
5. The high-speed driving module for a laser of a quantum communication single photon source according to claim 4, wherein an IN end of a current source driving chip U1 is used for inputting a narrow pulse driving electric signal, a SET end of the driving chip U1 is used for setting the magnitude of a driving current, and when the input signal is at a high level, an output port of the current source driving chip U1 is IN an off state and has no current; when the input signal IS low level, the output port of the current source driving chip U1 IS in a current-absorbing state, and the current IS at the output port passes through the input voltage V at the SET port SET Control with is=v SET * K, where K is a scaling factor.
6. The high-speed driving module for a laser of a quantum communication single photon source according to claim 5, wherein the switch of the triode Q1 is controlled by the base voltage VB thereof, the turn-on voltage of the triode Q1 is VT, when VB < VT, the triode Q1 is turned off, and the laser diode LD has no light output; when VB is larger than or equal to VT, the triode Q1 is started, and the laser diode LD outputs an optical signal.
7. The high-speed driving module for a laser of a quantum communication single photon source as claimed in claim 6 wherein when the input signal is low level, transistor Q1 is turned off, requiring VB<VT, since transistor Q1 is off, base current IB is 0 and base voltage VB satisfies the following relationship: 1) VCC-vb=i1×r1, 2) vb=i2×r2, 3) i1=is+i2, 4) is=v SET * K, wherein I1 is the current flowing through resistor R1, I2 is the current flowing through resistor R2, to satisfy VB<VT by setting V SET > VCC/(k×r1) -VT (r1+r2)/(k×r1×r2) turns off transistor Q1;
when the input signal IS at high level, the current IS at the output end of the current source driving chip U1 IS 0, and at this time, the triode Q1 IS turned on, vb=vt, and the base current IB of the triode Q1 satisfies the following relationship: 1) VCC-vt=i1×r1, 2) vt=i2×r2, 3) i1=i2+ib, from which ib= (VCC-VT)/R1-VT/R2 is derived.
8. The high-speed driving module according to claim 7, wherein when the input signal of the high-speed current source driving chip U1 is at a high level, the transistor Q1 is turned on, and the current ild= (VCC-VLD-Vce)/R3 flowing through the resistor R3 on the laser branch corresponds to the light pulse intensity of the output response of the laser diode LD, wherein VLD is the voltage across the laser diode LD, and Vce is the voltage between the collector and the emitter of the transistor Q1.
9. The laser high-speed driving module for quantum communication single photon source as claimed in claim 8 wherein the resistor R3 is an adjustable resistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710639949.XA CN109326954B (en) | 2017-07-31 | 2017-07-31 | Laser high-speed driving module for quantum communication single photon source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710639949.XA CN109326954B (en) | 2017-07-31 | 2017-07-31 | Laser high-speed driving module for quantum communication single photon source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109326954A CN109326954A (en) | 2019-02-12 |
| CN109326954B true CN109326954B (en) | 2024-01-26 |
Family
ID=65245572
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710639949.XA Active CN109326954B (en) | 2017-07-31 | 2017-07-31 | Laser high-speed driving module for quantum communication single photon source |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109326954B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111313226B (en) * | 2020-02-21 | 2021-12-03 | 国开启科量子技术(北京)有限公司 | High-speed driving method and device for quantum communication high-extinction-ratio narrow-pulse light source |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4887271A (en) * | 1987-08-19 | 1989-12-12 | Plessey Overseas Limited | Power supply for a laser diode in a common module |
| JPH06181351A (en) * | 1992-12-15 | 1994-06-28 | Fujitsu Ltd | Laser diode drive circuit |
| JP2001237489A (en) * | 2000-02-22 | 2001-08-31 | Yamaha Corp | Laser diode drive circuit |
| US6529536B1 (en) * | 1999-08-19 | 2003-03-04 | Kabushiki Kaisha Toshiba | Laser drive circuit and recording apparatus using the same |
| CN1406405A (en) * | 2000-11-17 | 2003-03-26 | 索尼公司 | Control method and control device for laser power of semiconductor laser and recording/reproducing method and device for magnetooptic recording medium and recording/reproducing |
| JP2003198046A (en) * | 2001-12-26 | 2003-07-11 | Fujitsu Access Ltd | Semiconductor laser drive circuit |
| JP2003198050A (en) * | 2001-12-26 | 2003-07-11 | Fujitsu Access Ltd | Semiconductor laser drive circuit |
| JP2004274305A (en) * | 2003-03-07 | 2004-09-30 | Fujitsu Ltd | Constant current pulse output circuit and optical communication device |
| CN1797994A (en) * | 2004-12-27 | 2006-07-05 | 中兴通讯股份有限公司 | Bias circuit for direct modulated laser |
| JP2007042731A (en) * | 2005-08-01 | 2007-02-15 | Olympus Corp | Pulse power supply device |
| CN101588014A (en) * | 2009-06-02 | 2009-11-25 | 上海华魏光纤传感技术有限公司 | Narrow pulse high-current semiconductor laser device driving circuit |
| CN106020305A (en) * | 2016-05-06 | 2016-10-12 | 科大国盾量子技术股份有限公司 | Voltage-controlled current source circuit and method thereof, and semiconductor laser and bias power supply thereof |
| CN206976797U (en) * | 2017-07-31 | 2018-02-06 | 科大国盾量子技术股份有限公司 | A kind of laser high-speed driving module for quantum communications single-photon source |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007294747A (en) * | 2006-04-26 | 2007-11-08 | Matsushita Electric Ind Co Ltd | Laser drive circuit, laser driving method, recording reproducer |
-
2017
- 2017-07-31 CN CN201710639949.XA patent/CN109326954B/en active Active
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4887271A (en) * | 1987-08-19 | 1989-12-12 | Plessey Overseas Limited | Power supply for a laser diode in a common module |
| JPH06181351A (en) * | 1992-12-15 | 1994-06-28 | Fujitsu Ltd | Laser diode drive circuit |
| US6529536B1 (en) * | 1999-08-19 | 2003-03-04 | Kabushiki Kaisha Toshiba | Laser drive circuit and recording apparatus using the same |
| JP2001237489A (en) * | 2000-02-22 | 2001-08-31 | Yamaha Corp | Laser diode drive circuit |
| CN1406405A (en) * | 2000-11-17 | 2003-03-26 | 索尼公司 | Control method and control device for laser power of semiconductor laser and recording/reproducing method and device for magnetooptic recording medium and recording/reproducing |
| JP2003198050A (en) * | 2001-12-26 | 2003-07-11 | Fujitsu Access Ltd | Semiconductor laser drive circuit |
| JP2003198046A (en) * | 2001-12-26 | 2003-07-11 | Fujitsu Access Ltd | Semiconductor laser drive circuit |
| JP2004274305A (en) * | 2003-03-07 | 2004-09-30 | Fujitsu Ltd | Constant current pulse output circuit and optical communication device |
| CN1797994A (en) * | 2004-12-27 | 2006-07-05 | 中兴通讯股份有限公司 | Bias circuit for direct modulated laser |
| JP2007042731A (en) * | 2005-08-01 | 2007-02-15 | Olympus Corp | Pulse power supply device |
| CN101588014A (en) * | 2009-06-02 | 2009-11-25 | 上海华魏光纤传感技术有限公司 | Narrow pulse high-current semiconductor laser device driving circuit |
| CN106020305A (en) * | 2016-05-06 | 2016-10-12 | 科大国盾量子技术股份有限公司 | Voltage-controlled current source circuit and method thereof, and semiconductor laser and bias power supply thereof |
| CN206976797U (en) * | 2017-07-31 | 2018-02-06 | 科大国盾量子技术股份有限公司 | A kind of laser high-speed driving module for quantum communications single-photon source |
Non-Patent Citations (2)
| Title |
|---|
| Laser diode driver with 5-decade range;Rudd, EP;《IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT》;第49卷(第1期);第2-4页 * |
| 面向微波光子雷达应用的激光驱动电路研制;樊彦恩等;《科技创新与应用》(第31期);第22-23页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109326954A (en) | 2019-02-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10140931B2 (en) | Shadow mask assemblies and reusing methods of shadow mask assemblies thereof | |
| US9632519B2 (en) | Class AB inverting driver for PNP bipolar transistor LDO regulator | |
| US7542684B2 (en) | Light emitting diode driving device and optical transmission device including the same | |
| US20020044008A1 (en) | Constant current driver circuit | |
| US7839097B2 (en) | System and method for wide-range high-accuracy-low-dropout current regulation | |
| JP2003124519A (en) | Light emitting diode drive circuit and optical transmitter using the same | |
| CN206976797U (en) | A kind of laser high-speed driving module for quantum communications single-photon source | |
| JPWO2005096480A1 (en) | Power supply device and display device | |
| JP2014096405A (en) | Optical transmission circuit | |
| CN109326954B (en) | Laser high-speed driving module for quantum communication single photon source | |
| CN106020305A (en) | Voltage-controlled current source circuit and method thereof, and semiconductor laser and bias power supply thereof | |
| CN108617061B (en) | Drive current adjusting device | |
| CN109818257B (en) | CMOS (complementary Metal oxide semiconductor) process laser driving circuit | |
| CN103956650A (en) | Temperature compensating circuit applied to laser driver | |
| CN110719669A (en) | High-power LED drive circuit applied to high-speed communication | |
| CN111313226B (en) | High-speed driving method and device for quantum communication high-extinction-ratio narrow-pulse light source | |
| CN112332212A (en) | Laser constant current drive circuit and laser projection display device | |
| CN110120627B (en) | Light emitting element drive circuit | |
| CN112769036B (en) | Voltage negative feedback laser driving circuit and control method | |
| JP3593623B2 (en) | Light emitting element drive circuit | |
| JP3488088B2 (en) | Light emitting diode drive circuit | |
| KR100448734B1 (en) | Low voltage Current driving circuit | |
| EP1286468B1 (en) | Driver circuits | |
| US7224709B2 (en) | Electrical circuit for a directly modulated semiconductor radiation source | |
| TWI479951B (en) | Light device and light driver circuit thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TG01 | Patent term adjustment | ||
| TG01 | Patent term adjustment |