CN104617483A - Ultra high speed laser driver circuit with bandwidth compensation and driver chip - Google Patents
Ultra high speed laser driver circuit with bandwidth compensation and driver chip Download PDFInfo
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- CN104617483A CN104617483A CN201510042192.7A CN201510042192A CN104617483A CN 104617483 A CN104617483 A CN 104617483A CN 201510042192 A CN201510042192 A CN 201510042192A CN 104617483 A CN104617483 A CN 104617483A
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- 238000000034 method Methods 0.000 claims abstract description 6
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- 239000003990 capacitor Substances 0.000 abstract 5
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- 238000004891 communication Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
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Abstract
The invention discloses an ultra high speed laser driver circuit with bandwidth compensation and a diver chip; the feedback circuit composed of two cross coupling capacitors and the capacitor and the resistor connected in a parallel mode is used for executing the laser driver bandwidth compensation. For two cross coupling capacitors, the stray capacitance between the base and the collector can be eliminated; for the feedback mode of one capacitor and one resistor, one zero point is generated for compensating the pole for realizing the bandwidth compensation; and the modulating current directly flows to the laser diode through the load resistor, so that the laser diode can obtain larger modulating current. The laser driver circuit and the driver chip having pre-emphasis function are simple in structure, high in bandwidth, large in modulating current and low in power consumption; the chip adopts the resistor and capacitor for expanding the bandwidth, the occupied area is small and the chip cost is reduced; the work speed is 40Gb/s through the 0.13 mum BiCMOS process certification and the output modulating current is greater than 10 mA.
Description
Technical field
The present invention relates to the laser driver circuit of transmitting terminal in the systems such as optical fiber communication, particularly relate to a kind of ultrahigh speed laser driver circuit and driver chip of bandwidth compensation.
Background technology
The features such as the Large Copacity that optical fiber telecommunications system has with it, obtain development at full speed in network and multimedia communication.Be light transmitting terminal in the front end of optical fiber, light transmitting terminal is made up of multiplexer, laser driver and laser diode.The effect of light transmitting terminal is exactly be a road high speed signal by multiplexer by multiplex low speed data signal multiplexing, and after laser driver circuit amplifies, driving laser LED lighting, is converted to high-speed optical signal, is sent out by optical fiber.Therefore the design object of laser driver is exactly to obtain high bandwidth, large output modulation amplitude of oscillation performance, the existing laser driver circuit with preemphasis function adopts inductance element to carry out spread bandwidth mostly, complicated structure needs to take a large amount of chip areas, adds the cost of chip manufacturing.
Summary of the invention
Goal of the invention: in order to overcome the deficiencies in the prior art, the invention provides a kind of ultrahigh speed laser driver circuit of bandwidth compensation, realizes high bandwidth and export modulated current greatly by simple components and parts, has the advantage that structure is simple, power consumption is lower.
Technical scheme: the type of laser driver is divided into voltage-type laser driver and current mode laser driver, voltage-type laser driver has the advantage that can drive common cathode diode laser matrix, to achieve these goals, the ultrahigh speed laser driver circuit of bandwidth compensation provided by the invention, comprise: three NPN bipolar transistor Q1, Q2, Q3, three metal-oxide-semiconductors M1, M2, M3, three resistance R
1, R
2, R
3, three electric capacity C
1, C
2, C
3with a laser diode VCSEL; The base stage of transistor Q1 meets input voltage V
in, collector electrode is by resistance R
1with supply voltage V
dDconnect, emitter is connected with the drain electrode of metal-oxide-semiconductor M1; The base stage of transistor Q2 meets input voltage V on the one hand
inn, on the other hand by electric capacity C
2be connected with the collector electrode of described transistor Q1, collector electrode is on the one hand by resistance R
2with supply voltage V
dDconnect, on the other hand by electric capacity C
1be connected with the base stage of described transistor Q1, emitter is connected with the drain electrode of metal-oxide-semiconductor M2 on the one hand, on the other hand by resistance R
3with electric capacity C
3the feedback circuit formed in parallel is connected with the emitter of described transistor Q1; The base stage of transistor Q3 meets DC offset voltage V
ref, collector electrode is connected with the collector electrode of described transistor Q2 on the one hand, on the other hand by resistance R
2with supply voltage V
dDconnect, emitter is connected with the drain electrode of metal-oxide-semiconductor M3; The grid of metal-oxide-semiconductor M1, M2 meets DC offset voltage V on the one hand respectively
mod, on the other hand by resistance R
3with electric capacity C
3the feedback circuit formed in parallel is connected to each other, and the grid of metal-oxide-semiconductor M3 meets DC offset voltage V
bias, the source grounding of metal-oxide-semiconductor M1, M2, M3; The anode of laser diode VCSEL is connected with the collector electrode of the collector electrode of described transistor Q2 and described transistor Q3 and passes through resistance R
2with supply voltage V
dDconnect, the minus earth of laser diode VCSEL.
Wherein, in order to eliminate transistor Q1 and the parasitic capacitance C between Q2 base stage and collector electrode
μimpact, electric capacity C
1and C
2adopt cross coupling structure, described electric capacity C
1capacitance equal between the base stage of described transistor Q1 and the collector electrode of described transistor Q2 parasitic capacitance C
μ 1, described electric capacity C
2capacitance equal between the collector electrode of described transistor Q1 and the base stage of described transistor Q2 parasitic capacitance C
μ 2.
Wherein, in order to realize preemphasis function with this to expand bandwidth, adopt electric capacity C
3with resistance R
3the feedback circuit formed in parallel, described resistance R
3with electric capacity C
3value meet: R
3c
3=R
outc
l, wherein, C
lrepresent the load capacitance at VCSEL output node place, R
lrepresent the load resistance of VCSEL output node.
The operation principle of this laser driver is:
First, electric capacity C
1and C
2adopt cross coupling structure, transistor Q1 and the parasitic capacitance C between Q2 base stage and collector electrode can be eliminated
μimpact.Below with the collector node of Q1 pipe for research object is analyzed left half of circuit.According to difference channel operation principle, the alternating voltage V of transistor Q1 collector node
out1with the alternating voltage V of transistor Q2 collector node
out2on the contrary, so, V
out1by parasitic capacitance C
μelectric current and V
out2by coupling capacitance C
1electric current sum I
1for:
I
1=sC
μ 1v
out1+ sC
1v
out2=s (C
μ 1-C
1) V
out1(1) in like manner can obtain:
I
2=sC
μ 2v
out2+ sC
2v
out1=s (C
μ 2-C
2) V
out2(2) so C is worked as
1=C
μ 1, C
2=C
μ 2time, I
1=I
2, the now impact of parasitic capacitance just can by electric capacity C
1and C
2offset, thus extend circuit bandwidth.
Secondly, electric capacity C
3with resistance R
3the feedback circuit formed in parallel achieves preemphasis function, has expanded bandwidth.If the mutual conductance of Q1 is g
m, analyze its left half of circuit, then the equivalent transconductance of amplifier is:
Wherein,
for representing electric capacity C
3with resistance R
3the parallel impedance of feedback circuit, can find out equivalent transconductance G from this formula
mcomprise a limit
with one zero point (R
3c
3)
-1.Use C
lrepresent the load capacitance at VCSEL output node place, R
lrepresent the load resistance of VCSEL output node, then the pole frequency that output node produces is (R
outc
l)
-1if, R
3c
3=R
outc
l, then the limit that zero point and output node place produce offsets,
become dominant pole, the bandwidth expansion of amplifier (1+g
mr
3/ 2) doubly.
Modulated current is by load resistance R simultaneously
2flow directly into VCSEL laser diode, make laser diode can obtain large modulated current.
Present invention also offers a kind of ultrahigh speed laser driver chip, except adopting above-mentioned laser driver circuit, also adopting BiCMOS technique to realize.
Beneficial effect: A) the present invention adopts electric capacity C
1with electric capacity C
2cross coupling structure, can eliminate the impact of transistor Q1 and the parasitic capacitance between Q2 base stage and collector electrode, has expanded bandwidth;
B) electric capacity C
3with resistance R
3feedback system produces and counteracts dominant pole a zero point, extends circuit bandwidth;
C) modulated current is by load resistance R
2flow directly into VCSEL laser diode, avoid in follower configuration, the scheme of modulated current is provided by transistor, make laser diode can obtain large modulated current;
D) this has the laser driver circuit of preemphasis function, have employed simple capacitance resistance element but not inductance element to expand circuit bandwidth, structure simply and substantially not chip occupying area, reduces chip manufacturing cost;
E) through 0.13 μm of BiCMOS technique checking, operating rate reaches 40Gb/s, exports modulated current and is greater than 10mA.
Accompanying drawing explanation
Fig. 1 is the ultrahigh speed laser driver circuit schematic diagram of bandwidth compensation in the present invention.
Embodiment
Below in conjunction with embodiment, the present invention is further described.
As shown in Figure 1, the ultrahigh speed laser driver circuit of bandwidth compensation in the present embodiment, the connected mode of each components and parts is as follows:
The base stage of NPN bipolar transistor Q1 meets input voltage V
inwith electric capacity C
1first end, the collector electrode connecting resistance R of transistor Q1
1first end and electric capacity C
2first end, the emitter of transistor Q1 connects the drain electrode of metal-oxide-semiconductor M1 on the one hand, on the other hand connecting resistance R
3first end and electric capacity C
3first end;
The base stage of NPN bipolar transistor Q2 meets input voltage V
innwith electric capacity C
2the second end, the collector electrode connecting resistance R of transistor Q2
2first end, electric capacity C
1the second end, the collector electrode of transistor Q3 and the anode of laser tube VCSEL, the emitter of Q2 meets the drain electrode of metal-oxide-semiconductor M2, resistance R
3the second end and electric capacity C
3the second end;
The base stage of NPN bipolar transistor Q3 meets input direct-current bias voltage V
ref, the collector electrode connecting resistance R of transistor Q3
2first end, the collector electrode of transistor Q2 and the anode of laser tube VCSEL, the emitter of transistor Q3 connects the drain electrode of metal-oxide-semiconductor M3;
The grid of metal-oxide-semiconductor M1 meets DC offset voltage V
modwith the grid of metal-oxide-semiconductor M2, the drain electrode of metal-oxide-semiconductor M1 meets the emitter of transistor Q1, resistance R
3with electric capacity C
3the first end of parallel circuits, the source ground of metal-oxide-semiconductor M1, and connect the source electrode of M2, M3 and the negative electrode of laser tube VCSEL;
The grid of metal-oxide-semiconductor M2 meets DC offset voltage V
modwith the grid of metal-oxide-semiconductor M1, the drain electrode of metal-oxide-semiconductor M2 meets the emitter of transistor Q2, resistance R
3with electric capacity C
3second end of parallel feedback circuit, the source ground of metal-oxide-semiconductor M2, and connect the source electrode of metal-oxide-semiconductor M1, M3 and the negative electrode of laser tube VCSEL;
The grid of metal-oxide-semiconductor M3 meets DC offset voltage V
bias, the drain electrode of metal-oxide-semiconductor M3 connects the emitter of transistor Q3, the source ground of metal-oxide-semiconductor M3, connects the source electrode of metal-oxide-semiconductor M1, M2 and the negative electrode of laser tube VCSEL simultaneously;
The collector electrode of the first termination transistor Q1 of resistance R1 and electric capacity C
2first end, the second termination power voltage V
dD;
Resistance R
2collector electrode, the electric capacity C of the first termination transistor Q2
1the second end, the collector electrode of transistor Q3 and the anode of laser tube VCSEL, the second termination power voltage V
dD;
Resistance R
3the emitter of the first termination transistor Q1, the drain electrode of metal-oxide-semiconductor M1, the emitter of the second termination transistor Q2, the drain electrode of metal-oxide-semiconductor M2;
Electric capacity C
1the first termination input voltage V
inwith the base stage of transistor Q1, the collector electrode of the second termination transistor Q2, the collector electrode of transistor Q3, resistance R
2first end and the anode of laser tube VCSEL;
Electric capacity C
2the collector electrode of the first termination transistor Q1 and resistance R
1first end, the second termination input voltage V
innwith the base stage of transistor Q2;
Electric capacity C
3the emitter of the first termination transistor Q1, the drain electrode of metal-oxide-semiconductor M1, the emitter of the second termination transistor Q2, the drain electrode of metal-oxide-semiconductor M2;
The anode of laser tube diode VCSEL meets collector electrode, the collector electrode of transistor Q3, the resistance R of transistor Q2
2first end and electric capacity C
1the second end.
In the present embodiment, laser driver chip has adopted BiCMOS technique to realize, the technical program has the advantages that structure is simple, bandwidth is high, modulated current is large and low in energy consumption, through 0.13 μm of BiCMOS technique checking, operating rate reaches 40Gb/s, exports modulated current and is greater than 10mA.Adopt resistance and electric capacity to expand bandwidth in the chips, the area taken is less, reduces chip cost.This laser driver can be applied in optical fiber telecommunications system, mutually integrated with laser diode, realizes photoelectricity integrated (OEIC) chip.
Claims (5)
1. a ultrahigh speed laser driver circuit for bandwidth compensation, is characterized in that, this circuit comprises: three NPN bipolar transistor Q1, Q2, Q3, three metal-oxide-semiconductors M1, M2, M3, three resistance R
1, R
2, R
3, three electric capacity C
1, C
2, C
3with a laser diode VCSEL; The base stage of transistor Q1 meets input voltage V
in, collector electrode is by resistance R
1with supply voltage V
dDconnect, emitter is connected with the drain electrode of metal-oxide-semiconductor M1; The base stage of transistor Q2 meets input voltage V on the one hand
inn, on the other hand by electric capacity C
2be connected with the collector electrode of described transistor Q1, collector electrode is on the one hand by resistance R
2with supply voltage V
dDconnect, on the other hand by electric capacity C
1be connected with the base stage of described transistor Q1, emitter is connected with the drain electrode of metal-oxide-semiconductor M2 on the one hand, on the other hand by resistance R
3with electric capacity C
3the feedback circuit formed in parallel is connected with the emitter of described transistor Q1; The base stage of transistor Q3 meets DC offset voltage V
ref, collector electrode is connected with the collector electrode of described transistor Q2 on the one hand, on the other hand by resistance R
2with supply voltage V
dDconnect, emitter is connected with the drain electrode of metal-oxide-semiconductor M3; The grid of metal-oxide-semiconductor M1, M2 meets DC offset voltage V on the one hand respectively
mod, on the other hand by resistance R
3with electric capacity C
3the feedback circuit formed in parallel is connected to each other, and the grid of metal-oxide-semiconductor M3 meets DC offset voltage V
bias, the source grounding of metal-oxide-semiconductor M1, M2, M3; The anode of laser diode VCSEL is connected with the collector electrode of the collector electrode of described transistor Q2 and described transistor Q3 and passes through resistance R
2with supply voltage V
dDconnect, the minus earth of laser diode VCSEL.
2. the ultrahigh speed laser driver circuit of bandwidth compensation according to claim 1, is characterized in that, described electric capacity C
1capacitance equal between the base stage of described transistor Q1 and the collector electrode of described transistor Q2 parasitic capacitance C
μ 1, described electric capacity C
2capacitance equal between the collector electrode of described transistor Q1 and the base stage of described transistor Q2 parasitic capacitance C
μ 2.
3. the ultrahigh speed laser driver circuit of bandwidth compensation according to claim 1, is characterized in that, described resistance R
3with electric capacity C
3value meet: R
3c
3=R
outc
l, wherein, C
lrepresent the load capacitance at VCSEL output node place, R
lrepresent the load resistance of VCSEL output node.
4. a ultrahigh speed laser driver chip for bandwidth compensation, is characterized in that, comprises ultrahigh speed laser driver circuit according to claim 1.
5. the ultrahigh speed laser driver chip of bandwidth compensation according to claim 4, is characterized in that, this chip adopts BiCMOS technique to realize.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510042192.7A CN104617483B (en) | 2015-01-27 | 2015-01-27 | The ultrahigh speed laser driver circuit and driver chip of a kind of bandwidth compensation |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510042192.7A CN104617483B (en) | 2015-01-27 | 2015-01-27 | The ultrahigh speed laser driver circuit and driver chip of a kind of bandwidth compensation |
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| Publication Number | Publication Date |
|---|---|
| CN104617483A true CN104617483A (en) | 2015-05-13 |
| CN104617483B CN104617483B (en) | 2017-06-16 |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106654854A (en) * | 2017-01-10 | 2017-05-10 | 光梓信息科技（上海）有限公司 | Overvoltage protection device and method for complementary metal oxide semiconductor (CMOS) laser driver |
| CN107104643A (en) * | 2017-06-23 | 2017-08-29 | 千度芯通（厦门）微电子科技有限公司 | Reduce photodiode parasitic capacitance circuit |
| CN107592086A (en) * | 2017-07-26 | 2018-01-16 | 湖北大学 | A kind of high-gain superelevation operating rate amplifier circuit |
| CN109246037A (en) * | 2018-08-13 | 2019-01-18 | 上海奥令科电子科技有限公司 | Driver and HSSI High-Speed Serial Interface transmitter for high-speed serial data transmission |
| CN109891690A (en) * | 2016-10-20 | 2019-06-14 | 日本电信电话株式会社 | Directly modulate laser driving circuit |
| CN110086082A (en) * | 2019-04-09 | 2019-08-02 | 华中师范大学 | A kind of VCSEL laser high-speed driving circuit of capacitive coupling preemphasis |
| WO2019218687A1 (en) * | 2018-05-16 | 2019-11-21 | 华为技术有限公司 | Laser drive circuit |
| WO2021115884A1 (en) | 2019-12-12 | 2021-06-17 | Sicoya Gmbh | Electrical amplifier |
| CN113114127A (en) * | 2021-04-27 | 2021-07-13 | 东南大学 | Large signal output swing driving circuit with high linearity |
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Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109891690A (en) * | 2016-10-20 | 2019-06-14 | 日本电信电话株式会社 | Directly modulate laser driving circuit |
| CN106654854A (en) * | 2017-01-10 | 2017-05-10 | 光梓信息科技（上海）有限公司 | Overvoltage protection device and method for complementary metal oxide semiconductor (CMOS) laser driver |
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| WO2021115884A1 (en) | 2019-12-12 | 2021-06-17 | Sicoya Gmbh | Electrical amplifier |
| US11139787B2 (en) | 2019-12-12 | 2021-10-05 | Sicoya Gmbh | Electrical amplifier |
| CN113114127A (en) * | 2021-04-27 | 2021-07-13 | 东南大学 | Large signal output swing driving circuit with high linearity |
| CN113114127B (en) * | 2021-04-27 | 2023-09-08 | 东南大学 | Large signal output swing driving circuit with high linearity |
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| CN104617483B (en) | 2017-06-16 |
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Granted publication date: 20170616 |