CN101916808A - High-power LED with high heat rediation performance - Google Patents
High-power LED with high heat rediation performance Download PDFInfo
- Publication number
- CN101916808A CN101916808A CN2010102254907A CN201010225490A CN101916808A CN 101916808 A CN101916808 A CN 101916808A CN 2010102254907 A CN2010102254907 A CN 2010102254907A CN 201010225490 A CN201010225490 A CN 201010225490A CN 101916808 A CN101916808 A CN 101916808A
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- Prior art keywords
- package support
- high heat
- emitting diodes
- heat dispersion
- electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- Led Device Packages (AREA)
Abstract
The invention discloses a high-power LED with high heat radiation performance. A heat radiation base (6) is arranged at the outer bottom of a packaging bracket; the central points of heat radiation base (6) and a chip (3) are on the same vertical line; the heat radiation base (6) comprises a heat radiation post which is in close contact with the bottom of the packaging bracket, wherein the heat radiation post is 0.2-2.0mm high and is connected with an electrode and the packaging bracket; and a hemispherical glass lens (7) is arranged at the top of the packaging bracket (1). In the high-power LED with high heat radiation performance, since optical glass is used as a lens, the LED can resist uvioresistant and prevent aging crack and can be applied to bulbs, various illumination facilities and liquid crystal display backlight. The high-power LED with high heat radiation performance has the advantages of wide application scope and simple structure and is suitable to industrial production and easy to generalize.
Description
Technical field
The present invention relates to a kind of light-emitting diode, the large-power light-emitting diodes of a kind of high heat dispersion that can be applied to lighting field of saying so more specifically.
Background technology
LED is the abbreviation of light emitting diode, is referred to as light-emitting diode, and since first red light emitting diodes came out in the world, led technology had experienced evolution at full speed, and the light-emitting diode of sending out coloured light various is born in succession.Japan at first obtained technological break-through on blue GaN-LED in 1993, and realized white light LEDs, the development of forward the 4th generation lighting source in recent years in 1996---and the direction based on the semiconductor illuminating light source of white light LEDs develops.Advantages such as that white light LEDs has is pollution-free, low-power consumption, highly reliable, long-life are a kind of environmental protection, energy-conservation green illumination light sources of meeting.Therefore, its appearance has caused the great attention of countries in the world government and numerous companies, and the range of application of light-emitting diode is developed from traditional indication field positive semiconductor lighting field direction.
At present, the maturation in large-power light-emitting diodes market promotes the development in pluralism of high-power packing forms.The encapsulation factory of main flow has got around traditional lumen packages framework, develops the package support that meets light, electricity, calorifics more, improves the problems of lumen product.As the conditional request height of reflow stove, support and copper post have used of a specified duration can produce gap, problems such as junction temperature of light emitting diode height.Though adopt traditional low power light-emitting diode packaging technology to solve the high-power light-emitting district piecemeal bright spot is arranged, but the initial design of this kind mode is the packing forms that adopts under the room temperature, it is mainly used in indication or shows that the field heat dispersion is relatively poor, as this kind packing forms is used in the illumination, must be because of the excessive generation excessive temperature of its power, as the reduction temperature of can not dispelling the heat timely, then can cause the brightness decay of diode consequently can't use, shorten its useful life, and because its too high all the time security incident that also easily takes place of temperature when using, and in the packaging technology of traditional large-power light-emitting diodes, the lens of its top of the trellis generally all are to adopt PC lens (plastic lens), and this lens weak point is that refractive index is low, security incident takes place in the easily aging and too high back of temperature.
Summary of the invention
The objective of the invention is to solve above-mentioned deficiency, a kind of high heat dispersion that has is provided, and the large-power light-emitting diodes of the zero-decrement a kind of high heat dispersion of lens printing opacity.
For solving above-mentioned technical problem, the present invention by the following technical solutions:
The large-power light-emitting diodes of high heat dispersion of the present invention, the electrode that comprises package support and its bottom, package support inside is filled with silica gel, the package support inside bottom is fixed with wafer, wafer is connected with electrode by gold thread, described wafer comprises the silica gel that blue light crystal grain that it is inner and blue light crystal grain periphery are filled and the mixture of fluorescent material, and described package support exterior bottom also is equipped with cooling base, and the central point of cooling base and wafer is on same vertical line; Include thermal column in the cooling base, thermal column closely contacts with the package support bottom, and wherein the height of thermal column is 0.2 to 2.0 millimeter, and thermal column and electrode and package support link together; Described package support top also is equipped with hemispheric glass lens.
Further technical scheme is: the height of described thermal column is 0.3 to 0.8 millimeter.
Further technical scheme is: described hemispheric glass lens is an optical glass lens.
Further technical scheme is: the metal electrode pin is installed on the described electrode.
Further technical scheme is: described metal electrode pin has two.
Further technical scheme is: described metal electrode pin has six.
Further technical scheme is: for closely to be connected, and very close to each other between them between described thermal column and electrode, the package support.
Further technical scheme is: described package support adopts resistant to elevated temperatures nylon engineering plastic to be processed into.
Compared with prior art, the invention has the beneficial effects as follows: foreshorten to 0.3 to 0.8 millimeter by height with thermal column in the cooling base, the heat that wafer medium blue optical grain is produced can be delivered on the radiator very soon, make the junction temperature of wafer medium blue optical grain can control than low three to five degrees centigrade of the light-emitting diode that adopts traditional cooling base structure, between thermal column and electrode and the package support for closely to be connected, reduced the generation probability of bubble in the encapsulation process, adopt optical glass as lens simultaneously, make the light-emitting diode can uvioresistant, prevent aging cracking, can steep at ball preferably, and use on various lighting installations and the LCD screen backlight, applied range, simple in structure, be suitable for industrial production, be easy to promote.
Description of drawings
Fig. 1 is a structural representation of the present invention.
Embodiment
The present invention is further elaborated below in conjunction with accompanying drawing.
As shown in Figure 1, the large-power light-emitting diodes of high heat dispersion of the present invention, electrode by package support 1 and its bottom is formed, the resistant to elevated temperatures nylon engineering plastic of package support 1 preferential employing is processed into, package support 1 inside is filled with silica gel 2, package support 1 inside bottom is fixed with wafer 3, wafer 3 is connected with electrode by gold thread 9, electrode is provided with two electrode pins 8, described wafer 3 comprises the mixture 5 of the silica gel 2 of filling in blue light crystal grain 4 that it is inner and blue light crystal grain 4 peripheries and fluorescent material, described package support exterior bottom also is equipped with cooling base 6, and the central point of cooling base 6 and wafer 3 is on same vertical line; Include thermal column in the cooling base 6, thermal column closely contacts with the package support bottom, and wherein the height of thermal column is 0.6 millimeter, and thermal column and electrode and package support link together,, and very close to each other between them between thermal column and electrode, the package support 1 for closely to be connected; Described package support 1 top also is equipped with hemispheric glass lens 7, the glass lens 7 preferential optical glass lens that adopt.
At the large-power light-emitting diodes of making high heat dispersion of the present invention, behind the package support 1 that the employing nylon engineering plastic is processed into, at the fixing luminescent wafer 3 of its bottom center, by gold thread 9 with wafer 3 and electrode between welding fixing, last nip point potting glue on package support promptly completes, adopt the wafer 3 of different glow colors just can be made into the product of various colors by said method according to structure of the present invention, be equipped with glass lens 7 and angle can be controlled at about 90 degree, and wafer 3 can be through reflow soldering by the welding of gold thread 9 with electrode.
As shown in Figure 1, the large-power light-emitting diodes of high heat dispersion of the present invention, electrode by package support 1 and its bottom is formed, the resistant to elevated temperatures nylon engineering plastic of package support 1 preferential employing is processed into, package support 1 inside is filled with silica gel 2, package support 1 inside bottom is fixed with wafer 3, wafer 3 is connected with electrode by gold thread 9, electrode is provided with six electrode pins 8, described wafer 3 comprises the mixture 5 of the silica gel 2 of filling in blue light crystal grain 4 that it is inner and blue light crystal grain 4 peripheries and fluorescent material, described package support 1 exterior bottom also is equipped with cooling base 6, and the central point of cooling base 6 and wafer 3 is on same vertical line; Include thermal column in the cooling base 6, thermal column closely contacts with package support 1 bottom, and wherein the height of thermal column is 0.8 millimeter, and thermal column and electrode and package support 1 link together,, and very close to each other between them between thermal column and electrode, the package support 1 for closely to be connected; Described package support 1 top also is equipped with hemispheric glass lens 7, the glass lens 7 preferential optical glass lens that adopt.At the large-power light-emitting diodes of making high heat dispersion of the present invention, behind the package support 1 that the employing nylon engineering plastic is processed into, at the fixing luminescent wafer 3 of its bottom center, by gold thread 9 with wafer 3 and electrode between welding fixing, last nip point potting glue on package support 1 promptly completes, adopt the wafer 3 of different glow colors just can be made into the product of various colors by said method according to structure of the present invention, be equipped with glass lens 7 and angle can be controlled at about 90 degree, and wafer 3 can be through reflow soldering by the welding of gold thread 9 with electrode.
Claims (8)
1. the large-power light-emitting diodes of a high heat dispersion, the electrode that comprises package support (1) and its bottom, package support (1) inside is filled with silica gel (2), package support (1) inside bottom is fixed with wafer (3), wafer (3) is connected with electrode by gold thread (9), described wafer (3) comprises blue light crystal grain (4) and the peripheral silica gel of being filled of blue light crystal grain (4) and the mixture (5) of fluorescent material that it is inner, it is characterized in that: described package support (1) exterior bottom also is equipped with cooling base (6), and the central point of cooling base (6) and wafer (3) is on same vertical line; Cooling base includes thermal column in (6), and thermal column closely contacts with package support (1) bottom, and wherein the height of thermal column is 0.2 to 2.0 millimeter, and thermal column and electrode and package support (1) link together; Described package support (1) top also is equipped with hemispheric glass lens (7).
2. the large-power light-emitting diodes of high heat dispersion according to claim 1, it is characterized in that: the height of described thermal column is 0.3 to 0.8 millimeter.
3. the large-power light-emitting diodes of high heat dispersion according to claim 1, it is characterized in that: described hemispheric glass lens (7) is an optical glass lens.
4. the large-power light-emitting diodes of high heat dispersion according to claim 1 is characterized in that: metal electrode pin (8) is installed on the described electrode.
5. the large-power light-emitting diodes of high heat dispersion according to claim 4, it is characterized in that: described metal electrode pin (8) has two.
6. the large-power light-emitting diodes of high heat dispersion according to claim 4, it is characterized in that: described metal electrode pin (8) has six.
7. the large-power light-emitting diodes of high heat dispersion according to claim 1, it is characterized in that: described thermal column closely is connected between (1) with electrode, package support, and very close to each other between them.
8. the large-power light-emitting diodes of high heat dispersion according to claim 1 or 5, it is characterized in that: described package support (1) adopts resistant to elevated temperatures nylon engineering plastic to be processed into.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102254907A CN101916808A (en) | 2010-07-14 | 2010-07-14 | High-power LED with high heat rediation performance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102254907A CN101916808A (en) | 2010-07-14 | 2010-07-14 | High-power LED with high heat rediation performance |
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| Publication Number | Publication Date |
|---|---|
| CN101916808A true CN101916808A (en) | 2010-12-15 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2010102254907A Pending CN101916808A (en) | 2010-07-14 | 2010-07-14 | High-power LED with high heat rediation performance |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102340918A (en) * | 2011-10-22 | 2012-02-01 | 华南师范大学 | Alternating current LED (Light Emitting Diode) device |
| CN102506315A (en) * | 2011-10-22 | 2012-06-20 | 华南师范大学 | High-color-rendering-property light-emitting diode (LED) device |
| CN103247747A (en) * | 2013-05-06 | 2013-08-14 | 东莞市星晖光电有限公司 | LED (light emitting diode) and manufacturing method thereof |
| CN103354255A (en) * | 2013-06-18 | 2013-10-16 | 大连中盛紫光科技有限责任公司 | Low blue light LED light source |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7592638B2 (en) * | 2005-10-19 | 2009-09-22 | Lg Innotek Co., Ltd. | Light emitting diode package |
| CN101656290A (en) * | 2009-09-29 | 2010-02-24 | 四川九洲光电科技有限公司 | Process for encapsulating light-emitting diode |
-
2010
- 2010-07-14 CN CN2010102254907A patent/CN101916808A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7592638B2 (en) * | 2005-10-19 | 2009-09-22 | Lg Innotek Co., Ltd. | Light emitting diode package |
| CN101656290A (en) * | 2009-09-29 | 2010-02-24 | 四川九洲光电科技有限公司 | Process for encapsulating light-emitting diode |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102340918A (en) * | 2011-10-22 | 2012-02-01 | 华南师范大学 | Alternating current LED (Light Emitting Diode) device |
| CN102506315A (en) * | 2011-10-22 | 2012-06-20 | 华南师范大学 | High-color-rendering-property light-emitting diode (LED) device |
| CN103247747A (en) * | 2013-05-06 | 2013-08-14 | 东莞市星晖光电有限公司 | LED (light emitting diode) and manufacturing method thereof |
| CN103354255A (en) * | 2013-06-18 | 2013-10-16 | 大连中盛紫光科技有限责任公司 | Low blue light LED light source |
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| C06 | Publication | ||
| PB01 | Publication | ||
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| SE01 | Entry into force of request for substantive examination | ||
| C53 | Correction of patent of invention or patent application | ||
| CB03 | Change of inventor or designer information |
Inventor after: Ren Heng Inventor after: Li Junfei Inventor after: Zhong Jian Inventor before: Ren Heng Inventor before: Li Junfei Inventor before: Zhong Jian |
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| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20101215 |