CN101140965A - Semiconductor light-emitting diode without bracket - Google Patents
Semiconductor light-emitting diode without bracket Download PDFInfo
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- CN101140965A CN101140965A CNA2006101130563A CN200610113056A CN101140965A CN 101140965 A CN101140965 A CN 101140965A CN A2006101130563 A CNA2006101130563 A CN A2006101130563A CN 200610113056 A CN200610113056 A CN 200610113056A CN 101140965 A CN101140965 A CN 101140965A
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- led
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- transmission medium
- encapsulation
- emitting
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Abstract
The invention provides a non-support semiconductor LED, which belongs to the technical field of photoelectricity. The LED comprises an LED chip and a transparent medium for encapsulation. The LED chip is positioned in the transparent medium for encapsulation. The connection lead of the LED chip is separately connected with two LED electrodes directly. The LED chip provided in the invention can educe all light from the bright dipping face and obtain the white light by blazing the fluoresce powder in 360 degrees. Compared with the current common semiconductor LED with support, the invention is characterized in stable optical power and calorifics, longer service life, simple preparation process, which is favorable for realizing industrialization.
Description
Technical field
The invention belongs to field of photoelectric technology, relate in particular to a kind of unsupported semiconductor light-emitting-diode.
Background technology
Light-emitting diode (LED) is used in every field, and along with the continuous progress of material growth, device technology of preparing, its luminous efficiency promptly improves to surpass 20% speed every year.At present, reach the efficient of every watt of 60-80 lumen, be applied in partly that illumination, light demonstration, traffic signals, liquid crystal backlight, air cleaning, water purify, biological detection, even the drinking water disinfection of the short distance communication of military field, field units or the like.But, LED also needs luminous efficiency is improved, reach every watt of 200lum, every lamp cost reduces 1/3-1/4, estimate 2 dollars of every kilolumens, LED may replace present traditional lighting light source (fluorescent lamp) in its maximum application-civilian illumination, become energy-conservation, green, the solid light source efficiently of a new generation.
With reference to figure 1, comprise in the existing LED structure that chip 2, encapsulation constitute with light transmission medium 3, metallic support 4 leads 5 and LED contact conductor 1, promptly pass through the led chip 2 that semiconductor upstream and midstream technical process is finished, be fixed on the metallic support 4, the contact conductor of LED is finished in the routing welding, and the chip that will have support again is fixed in the mould, pour into encapsulation light transmission medium 3, through overcuring, downstream processes such as the demoulding, pin arrangement are finished the encapsulation of LED.
Light-emitting diode structure though the research of support shape and size, encapsulating material makes that light propagation, heat radiation, the aging aspect of LED are constantly progressive, at present, is not still left traditional form, i.e. welding chip on metallic support.Because the design of metallic support, limited the derivation of light in holder orientation, make the light of LED can't derive at chip and support contact-making surface, through repeatedly reflecting and absorption process, finally become heat and lose, the photoconduction of tradition LED goes out efficient and fundamentally is restricted, and stability (life-span) is caused adverse effect.
Summary of the invention
At the problems referred to above, the invention provides a kind of unsupported LED structure, make the light of all exiting surfaces of led chip can both bright dipping, thereby improve the light extraction efficiency of LED.
A kind of unsupported semiconductor light-emitting-diode comprises led chip and encapsulates and use light transmission medium, led chip to be suspended in encapsulation with in the light transmission medium that led chip directly is connected with two LED electrodes respectively by lead.
Can adopt the fluid thing of heat conduction and insulation to use light transmission medium as encapsulation, this encapsulation is sealed in the shell with light transmission medium, and shell can adopt glass, polymethyl methacrylate and makrolon material.The fluid thing of heat conduction and insulation can be inert gases such as atoleine, nitrogen or helium.
Can also connect one outside with the light transmission medium shell with light transmission medium or encapsulation in encapsulation is provided with one in can reflecting LED reflection of light device or encapsulating with light transmission medium and can reflects LED reflection of light film.
Led chip can be made up of the chip of many identical emission wavelengths or the chip of many different emission wavelengths.
But Heat Conduction Materials such as doped carbon nanometer pipe, bortz powder in light transmission medium is used in encapsulation.
The LED contact conductor also can adopt column heat sink electrodes lead-in wire.
The shape of led chip can be bar shaped, linear or circular point shape.
Each exiting surface on the led chip all is coated with fluorescent material, or fluorescent material evenly is blended in encapsulation with in the light transmission medium, or is coated in the inner surface of encapsulation with the light transmission medium shell, or the outer surface of LED, to realize 360 ° of white light LEDs that excite.
Advantage of the present invention and technique effect
1, changes the structure of LED and the preparation method of LED at all, adopted no bracket LED structure, the light of all exiting surfaces of led chip all may be derived, thereby improved the light extraction efficiency of LED.The simple experiment result shows at present, and to conventional tube core, no rack structure LED of the present invention improves more than 85% than common packaged LED optical efficiency blue light, and white light improves more than 35%, if through technological improvement and optimization, believe to have bigger raising.
2, corresponding to the LED of no rack structure, implement the design of radiating modes at whole outer surfaces of chip, therefore heat dissipation design can carry out aspect more and be expanded, and improves the life-span of LED.
3, based on the LED of no rack structure, the design of led chip also will be designed to bar shaped, linear, circular point shape and corresponding combination as required, thereby adapt to different application needs.
4, based on the LED of no rack structure, the reflector of LED can be placed on the encapsulating material or between led chip and the encapsulating material, adopt reflector design, realize the angle of emergence, the controllable LED of the angle of divergence, improve the performance of LED.
5, based on the LED of no rack structure, implement the led chip of multiple emission wavelength, constitute the combination of multiple light color element, be applied to white light LEDs, can prepare the white-light illuminating and the application product thereof of high color rendering index (CRI), also can be used for the luminous intensity distribution of other color in the light demonstration.
6, based on the LED of no rack structure, enforcement and other photoelectric device is integrated on the encapsulation level, the application of expansion LED
7, based on the LED of no rack structure, can prepare the led light source on plane, as the backlight of liquid crystal display, and the large scale display light source.LED possibility of its application in the light display light source of preparation energy-saving and environmental protection is improved greatly.
8, based on LED corresponding to no rack structure, LED package is with the resin of light transmission medium from present application, expand to and have combined material or the structure that good light derives solid, liquid, gas, colloid and the above-mentioned material of performance and heat conductivility, for example, bortz powder and mixed with resin, atoleine, carbon nano-tube material, and the sandwich of variations in refractive index etc.
9. combined with fluorescent powder coating technology, the present invention can realize 360 ° of excitated fluorescent powders, obtains white light LEDs.
10, in conjunction with the design of chip design, heat dissipation design, encapsulating material, can make led light source and conventional lamp coupling, realize that the LED illumination of real meaning is used.
11, adopt the LED of no rack structure, can improve and simplify present light-emitting diode production process, enhance productivity, reduce production costs.
12, mainly be, the LED of no rack structure breaks away from the LED structure from traditional supporting structure, has expanded the thinking of led chip design, heat dissipation design, package design, will promote the huge advance made of LED and related industry.
Description of drawings
The structural representation of Fig. 1 tradition LED;
Fig. 2 the present invention does not have the structural representation of bracket LED;
Fig. 3-a, Fig. 3-b and Fig. 3-c do not have preparation technology's schematic diagram of bracket LED for the present invention;
The present invention of Fig. 4 band reflector does not have the schematic diagram of bracket LED.
Embodiment
With reference to figure 2, the present invention compares with the semiconductor light-emitting-diode that has support of present routine, and led chip 2 places encapsulation with in the light transmission medium 3, and led chip does not have fixed support, and it directly is connected with two LED contact conductors 1 respectively by lead 5.
With reference to figure 3, no bracket LED preparation method's concrete steps are as follows:
(1) corresponding to required wavelength, epitaxial growth obtains the epitaxial wafer of LED structure;
(2) finish middle reaches technology, obtain led chip;
(3) but chip 2 placed one have on the brace table 6 of fixed chip (Fig. 3-a);
(4) bonding wire (Fig. 3-b) chip 2 is connected by lead 5 with two electrodes 1;
(5) remove the brace table 6 of chip below, the chip that will have contact conductor places mould, and pour into encapsulation such as epoxy resin or silica gel and use light transmission medium, the demoulding after the encapsulation material solidifies, the unsupported LED of formation the present invention (Fig. 3-c).
The encapsulation material of light transmission medium and the shape and size after the curing can be in conjunction with the actual needs respective change.
For the technique effect of this invention is described, adopting tester is distant place Photo2000J photometer, under the 20mA operating current, carries out conventional structure LED and LED structure contrast experiment of the present invention, and the result is as follows:
(1) blue-ray LED
| Wavelength (nm) | Luminous flux (lm) | |
| Conventional structure LED | 463±2.5nm | 0.3-0.5 |
| Structure LED of the present invention | 463±2.5nm | 0.7-0.8 |
(2) white light LEDs
| Luminous flux (lm) | Colour temperature (K) | |
| Conventional structure LED | 3.0-3.2 | 5500-6000 |
| Structure LED of the present invention | 4.0-4.5 | 5500-6000 |
From above-mentioned experimental result as can be seen, the relative conventional structure LED of the brightness of LED structure of the present invention, blue-ray LED luminous flux improve more than 85%, and the white light LEDs luminous flux improves more than 35%.
The present invention can also adopt the light-transmitting materials of PC, glass to make shell, and shape can be made conventional bulb, fluorescent tube, lamp band, lamppost etc. as required; To encapsulate with light transmission medium and pour in the shell, seal, obtain unsupported LED, encapsulating material adopts the fluid (gas and liquid) with heat conduction and insulation that can see through LED light as atoleine, nitrogen, colloid (resin etc.), and the mixture that helps the different light transmission mediums of bright dipping.
In above-mentioned light transmission medium,, can add Heat Conduction Materials such as carbon nano-tube, bortz powder in order to be more conducive to heat radiation and luminous.
Because the light of all exiting surfaces of led chip of the present invention all may be derived, controlled in order to realize the angle of emergence and the angle of divergence, configuration one reflector outside no bracket LED light transmission medium, with reference to figure 4, this reflector can be the solid shell 7 that has the Any shape of metallic reflective coating, also can directly dispose a metallic reflective coating in the LED light transmission medium.
Led chip of the present invention can be bar shaped, linear or some shape, can adapt to different application needs.
Led chip of the present invention can be made up of the chip of many identical emission wavelengths or the chip of many different emission wavelengths, obtains the LED of high brightness, different colours.
The present invention can also adopt column heat sink electrodes lead-in wire, obtains better radiating effect.
For realizing the novel white-light LED of 360 ° of excitated fluorescent powders, the present invention can also adopt fluorescent powder coated at each exiting surface of chip, or fluorescent material evenly is blended in encapsulation with in the light transmission medium, or will be fluorescent powder coated in the LED outer surface or encapsulate and use the light transmission medium outer casing inner wall.
In sum, the invention discloses a kind of unsupported semiconductor light-emitting-diode.Above-described application scenarios and embodiment are not to be used to limit the present invention, and any those skilled in the art without departing from the spirit and scope of the present invention, can do various changes and retouching, so protection scope of the present invention is looked the claim scope and defined.
Claims (10)
1. a unsupported semiconductor light-emitting-diode comprises led chip and encapsulates and uses light transmission medium, it is characterized in that: led chip is suspended in encapsulation with in the light transmission medium, and led chip directly is connected with two LED electrodes respectively by lead.
2. unsupported semiconductor light-emitting-diode as claimed in claim 1 is characterized in that: the fluid thing with heat conduction and insulation is used light transmission medium as encapsulation, and this encapsulation is sealed in the light transmitting shell with light transmission medium.
3. unsupported semiconductor light-emitting-diode as claimed in claim 2 is characterized in that: the fluid thing of heat conduction and insulation is atoleine, nitrogen or inert gas.
4. unsupported semiconductor light-emitting-diode as claimed in claim 1 or 2 is characterized in that: fixedly connected one the reflected LED reflection of light device that is complementary with the shell of light transmission medium or light transmission medium with encapsulation.
5. unsupported semiconductor light-emitting-diode as claimed in claim 1 or 2 is characterized in that: in encapsulation one metallic reflective coating that can reflect LED light is set in light transmission medium.
6. unsupported semiconductor light-emitting-diode as claimed in claim 1 or 2 is characterized in that: at each exiting surface coating fluorescent powder of led chip.
7. unsupported semiconductor light-emitting-diode as claimed in claim 1 or 2 is characterized in that: at encapsulation even mixed fluorescent powder in the light transmission medium.
8. unsupported semiconductor light-emitting-diode as claimed in claim 2 is characterized in that: coating fluorescent powder on the wall in the enclosure.
9. unsupported semiconductor light-emitting-diode as claimed in claim 1 or 2 is characterized in that: led chip be shaped as bar shaped, linear or circular point shape.
10. unsupported semiconductor light-emitting-diode as claimed in claim 1 or 2 is characterized in that: encapsulation is with being doped with carbon nano-tube and bortz powder in the light transmission medium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101130563A CN101140965A (en) | 2006-09-08 | 2006-09-08 | Semiconductor light-emitting diode without bracket |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101130563A CN101140965A (en) | 2006-09-08 | 2006-09-08 | Semiconductor light-emitting diode without bracket |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101140965A true CN101140965A (en) | 2008-03-12 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2006101130563A Pending CN101140965A (en) | 2006-09-08 | 2006-09-08 | Semiconductor light-emitting diode without bracket |
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| Country | Link |
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| CN (1) | CN101140965A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102468402A (en) * | 2010-11-17 | 2012-05-23 | 展晶科技(深圳)有限公司 | Light-emitting diode packaging structure, and manufacturing method thereof |
| CN102751274A (en) * | 2012-07-18 | 2012-10-24 | 上海顿格电子贸易有限公司 | Three-dimensionally wrapped packaged LED (Light Emitting Diode) chip |
| CN102856467A (en) * | 2011-06-30 | 2013-01-02 | 新世纪光电股份有限公司 | Light emitting diode packaging structure with light filtering element |
| CN113675319A (en) * | 2021-08-05 | 2021-11-19 | 华引芯（武汉）科技有限公司 | Ultraviolet semiconductor packaging structure, packaging device and preparation method |
-
2006
- 2006-09-08 CN CNA2006101130563A patent/CN101140965A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102468402A (en) * | 2010-11-17 | 2012-05-23 | 展晶科技(深圳)有限公司 | Light-emitting diode packaging structure, and manufacturing method thereof |
| CN102856467A (en) * | 2011-06-30 | 2013-01-02 | 新世纪光电股份有限公司 | Light emitting diode packaging structure with light filtering element |
| CN102751274A (en) * | 2012-07-18 | 2012-10-24 | 上海顿格电子贸易有限公司 | Three-dimensionally wrapped packaged LED (Light Emitting Diode) chip |
| CN113675319A (en) * | 2021-08-05 | 2021-11-19 | 华引芯（武汉）科技有限公司 | Ultraviolet semiconductor packaging structure, packaging device and preparation method |
| CN113675319B (en) * | 2021-08-05 | 2023-03-28 | 华引芯（武汉）科技有限公司 | Ultraviolet semiconductor packaging structure, packaging device and preparation method |
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