CN113675319B - Ultraviolet semiconductor packaging structure, packaging device and preparation method - Google Patents
Ultraviolet semiconductor packaging structure, packaging device and preparation method Download PDFInfo
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- CN113675319B CN113675319B CN202110895274.1A CN202110895274A CN113675319B CN 113675319 B CN113675319 B CN 113675319B CN 202110895274 A CN202110895274 A CN 202110895274A CN 113675319 B CN113675319 B CN 113675319B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The invention provides an ultraviolet semiconductor packaging structure, a packaging device and a preparation method, wherein the ultraviolet semiconductor packaging structure comprises: the substrate comprises a first surface and a second surface which are oppositely arranged, and the first surface forms a functional area; the reflecting mechanism is arranged around the functional area; the light transmitting mechanism is arranged on one side of the light reflecting mechanism, which is far away from the first surface, so as to cover the top of the functional area, which is far away from the first surface; the main body of the light transmission mechanism is symmetrically arranged along a first symmetry axis, ultraviolet light rays are emitted from the bottom surface of the light transmission mechanism and enter a first curved surface of the light transmission mechanism to enclose an area, the ultraviolet light rays are converged in a third curved surface of the light transmission mechanism to enclose the area after being totally reflected by the first curved surface, the ultraviolet light rays are reflected by a second curved surface at the top of the light transmission mechanism to be diffused, and finally the ultraviolet light rays are expanded and emitted through the third curved surface, so that the ultraviolet light rays can be emitted in 360 degrees. Through the mode, the ultraviolet semiconductor packaging structure with high light emitting efficiency, high reliability and wide light emitting angle is provided.
Description
Technical Field
The invention relates to the technical field of ultraviolet light-emitting semiconductors, in particular to an ultraviolet semiconductor packaging structure, a packaging device and a preparation method.
Background
UV is ultraviolet band light, the peak wavelength WP of the UV is less than 380nm, the UV can be primarily divided into UVA, UVB and UVC which are widely applied to the fields of industry, medical treatment and the like, for example, UVA can be used for material curing, UVB can be used for ultraviolet phototherapy, UVC can be used for microbial sterilization and the like.
At present, two technologies capable of stably generating UV light are available on the market, one is a mercury lamp, and the other is a UVC LED. The development of mercury lamps for emitting UV light by human beings has been a history of more than a century, the technology is relatively mature, the cost is relatively low, and at present, high-pressure mercury lamps are still widely used in the field of material curing; in water sterilization treatment, low-pressure mercury lamps are still widely used in the field of medical sterilization. Mercury is a highly toxic metal, and has a serious and long-lasting effect on animals and the natural environment. China also forbids the production and imports and exports of products containing mercury gradually since 2020.
Since mercury technology is inevitably forbidden and UV LED is an alternative technology, a large number of researchers invest in the development and manufacturing field of UV LED. Compared with a mercury lamp, the LED is used for emitting ultraviolet light, is clean and pollution-free, and has the advantages of small volume, easiness in integration, long service life, no need of high-voltage pulse starting and the like. However, the UVC LED technology has a short development time, and the mercury lamp cannot be completely replaced in performance and efficiency at present.
UV LED especially UVC LED electro-optical conversion efficiency is low, and a large amount of energy is consumed with hot form, therefore in UV LED chip manufacturing and encapsulation field, need improve luminous efficiency, just can draw close with the cost difference of mercury lamp, in addition, the mercury lamp is 360 luminous, a fluorescent tube can 360 emission UV light, and its luminous angle is 60-120 after UV LED encapsulates, if need reach 360, then need set up UV LED lamp pearl alone in other angle, and its is with high costs, is difficult to be accepted by the market at present.
In view of the above, it is desirable to provide a novel uv semiconductor package structure, a package device and a method for manufacturing the same to overcome the current defects.
Disclosure of Invention
Based on the ultraviolet semiconductor packaging structure, the packaging device and the preparation method, the ultraviolet semiconductor device with high light emitting efficiency, high reliability and wide light emitting angle is provided.
The invention provides an ultraviolet semiconductor packaging structure, comprising:
the substrate comprises a first surface and a second surface which are oppositely arranged, and the first surface forms a functional area;
the reflecting mechanism is arranged around the functional area;
the light transmitting mechanism is arranged on one side, far away from the first surface, of the light reflecting mechanism so as to cover the top, far away from the first surface, of the functional area;
the light transmission mechanism is of an axisymmetric structure and is symmetrically distributed along a first symmetric axis, the light transmission mechanism comprises a bottom surface opposite to the functional region, a first curved surface extending from the periphery of the bottom surface to the back of the functional region, a second curved surface opposite to the bottom surface and a third curved surface connecting the top end periphery of the first curved surface far away from the bottom surface and the periphery of the second curved surface, and the projection of the top end periphery of the first curved surface along the direction of the first symmetric axis is located on the bottom surface;
the first curved surface, the second curved surface and the third curved surface are all symmetrically arranged along the first symmetry axis; the first curved surface is enclosed by a plurality of first circular arcs and establishes and forms, the third curved surface is enclosed by a plurality of second circular arcs and establishes and forms, first circular arc with the second circular arc all faces away from first symmetry axis direction protrusion, the second curved surface orientation the bottom surface protrusion, the bottom surface with first surface parallel arrangement.
Preferably, the centers of the plurality of second arcs are concentric, and the centers of the plurality of second arcs are located on the first symmetry axis and form the third curved surface as a spherical surface;
and/or the second curved surface is a spherical surface, and the spherical center of the second curved surface is positioned on the first symmetry axis.
Preferably, the bottom surface is circular, the radius of the bottom surface is 1.2-3mm, the radius of the first arc is 140-180mm, the radius of the second curved surface is 5-15mm, the radius of the third curved surface is 5-9mm, and the distance from the bottom surface to the spherical center of the third curved surface is 50-100mm.
Preferably, the light-transmitting mechanism is made of quartz, and the first curved surface and the third curved surface are in transition connection through a fillet.
Preferably, the light-transmitting mechanism is detachably mounted on one side of the light-reflecting mechanism, which is far away from the substrate.
Preferably, the top of one side, away from the substrate, of the light reflecting mechanism is provided with a conductive part, the conductive part is provided with first threads, the light transmitting mechanism is provided with second threads, and the light transmitting mechanism and the light reflecting mechanism are fixed in a threaded manner through the first threads and the second threads which are matched with each other.
Preferably, the conductive part is along a week is established to reflecting mechanism's top periphery, including being close to the inboard of functional area, first screw thread is located the inboard of conductive part, the screw thread tooth depth of first screw thread is 100-200um.
Preferably, the inner wall of the light reflecting mechanism close to the functional area is in a circular arc shape which is sunken towards the substrate, and a light reflecting film is arranged on the inner wall of the light reflecting mechanism.
The invention also provides an ultraviolet semiconductor packaging device which comprises the ultraviolet semiconductor packaging structure and at least one ultraviolet semiconductor light-emitting chip arranged in the functional region of the ultraviolet semiconductor packaging structure, wherein two electrodes of the ultraviolet semiconductor light-emitting chip are respectively connected with the first bonding pad and the second bonding pad in the ultraviolet semiconductor packaging structure.
The invention also provides a preparation method of the ultraviolet semiconductor packaging device, which comprises the following steps:
providing a substrate, wherein the substrate is provided with a first surface and a second surface which are oppositely arranged, and a plurality of functional areas are formed on the first surface;
manufacturing light reflecting mechanisms which correspond to the functional areas one by one, and enclosing the light reflecting mechanisms in the functional areas;
arranging a conductive part on the top of the light reflecting mechanism far away from the first surface;
providing an ultraviolet light-emitting element, and fixing the ultraviolet light-emitting element in the functional area;
preparing a light transmission mechanism by adopting an injection molding method, and mounting the light transmission mechanism on the light reflection mechanism; light transmission mechanism is axisymmetric structure and distributes along first symmetry axis symmetry, light transmission mechanism include with the relative bottom surface of functional area, certainly the bottom surface periphery is to departing from the first curved surface that the functional area extends, with the relative second curved surface that sets up of bottom surface and connection first curved surface is kept away from the top periphery of bottom surface with the peripheral third curved surface of second curved surface, the top periphery of first curved surface is followed the projection of first symmetry axis direction falls in the bottom surface, first curved surface second curved surface and the third curved surface all follows first symmetry axis symmetry sets up, first curved surface is enclosed by a plurality of first circular arcs and is established and form, the third curved surface is enclosed by a plurality of second circular arcs and establishes, first circular arc with the second circular arc all faces and deviates from first symmetry axis direction protrusion, the second curved surface faces the bottom surface protrusion, the bottom surface with first surface parallel arrangement.
The invention has the beneficial effects that the invention provides an ultraviolet semiconductor packaging structure, a packaging device and a preparation method, wherein the ultraviolet semiconductor packaging structure comprises the following components: the substrate comprises a first surface and a second surface which are oppositely arranged, and the first surface forms a functional area; the reflecting mechanism is arranged around the functional area; the light transmitting mechanism is arranged on one side of the light reflecting mechanism, which is far away from the first surface, so as to cover the top of the functional area, which is far away from the first surface; the main body of the light transmission mechanism is symmetrically arranged along a first symmetry axis, ultraviolet light rays are emitted from the bottom surface of the light transmission mechanism to enter a first curved surface surrounding area of the light transmission mechanism, are converged in a third curved surface surrounding area of the light transmission mechanism after being totally reflected by the first curved surface, are reflected by a second curved surface at the top of the light transmission mechanism to be dispersed, and are finally expanded and emitted through the third curved surface, so that the ultraviolet light rays can be emitted in 360 degrees. Through the mode, the ultraviolet semiconductor packaging structure with high light emitting efficiency, high reliability and wide light emitting angle is provided.
Drawings
Fig. 1 is a schematic structural diagram of an ultraviolet semiconductor package structure according to an embodiment of the invention;
FIG. 2 isbase:Sub>A cross-sectional view taken along line A-A of FIG. 1;
fig. 3 is a test chart of optical simulation results of the ultraviolet semiconductor package device according to the embodiment of the present invention;
FIG. 4 is a flow chart of a method for fabricating an ultraviolet semiconductor package device in accordance with an embodiment of the present invention;
the meaning of the reference symbols in the drawings is:
100-ultraviolet semiconductor package structure; 1-a substrate; 11-a first surface; 12-a second surface; 13-a functional region; 14-opening a hole; 141-pad; 142-an extension layer; 143-conductive structures; 2-a light reflecting mechanism; 3-a light transmission mechanism; 31-a bottom surface; 32-a first curved surface; 321-a first arc; 33-a second curved surface; 34-a third curved surface; 341-second arc; l-a first axis of symmetry; 4-round corner; 5-a conductive portion; 51-a first thread; 210-ultraviolet semiconductor light emitting chip.
Detailed Description
To facilitate an understanding of the invention, the invention will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.
Fig. 1 to 2 show an ultraviolet semiconductor package structure according to an embodiment of the present invention. The ultraviolet semiconductor packaging structure comprises a substrate 1, a reflecting mechanism 2 and a light-transmitting mechanism 3. The substrate 1 has a first surface 11 and a second surface 12 which are oppositely arranged, the first surface 11 and the second surface 12 are arranged in parallel, and a functional region 13 is formed on the first surface 11. Reflecting mechanism 2 sets up with functional area 13 one-to-one, encloses to locate around functional area 13, and reflecting mechanism 2's central authorities fretwork is including the inner wall that is close to functional area 13 and the outer wall of keeping away from functional area 13 one side. Usually, in the ultraviolet semiconductor package structure, the substrate 1 is made of an AlN substrate, at least one set of openings 14 is further formed in the substrate 1, each set of two openings 14 includes two openings 14, the openings 14 extend from the first surface 11 to the second surface 12 to penetrate through the substrate 1, one end of the opening 14 located on the first surface 11 is covered with the pad 141, one end of the opening 14 located on the second surface 12 is covered with the extension layer 142, and the opening 14 is provided with the conductive structure 143 connecting the pad 141 and the extension layer 142, so as to form the functional region 13 on the first surface 11. The reflecting mechanism 2 is of a box dam structure and is also made of AlN base materials, the inner wall of the reflecting mechanism is arc-shaped and is sunken towards the direction of the substrate 1, and a reflecting film is plated on the arc-shaped inner wall and used for reflecting ultraviolet light emitted by the ultraviolet semiconductor.
The main body of the light transmission mechanism 3 is an axisymmetric structure, and is symmetrically distributed along the first symmetry axis L. The light transmission mechanism 3 is a solid structure made of quartz material, and includes a bottom surface 31, a first curved surface 32, a second curved surface 33, and a third curved surface 34. The bottom surface 31 is a flat plane, is parallel to the first surface 11, faces the functional region 13, is far away from the upper part of the second surface 12, and is covered at the hollow part of the light reflecting mechanism 2; the first curved surface 32 is formed by extending from the periphery of the bottom surface 31 to the direction away from the functional region 13, and the projection of the top end periphery of the first curved surface 32, which is far away from the bottom surface 31, along the first symmetry axis L falls in the bottom surface 31, so that the first curved surface 32 gradually approaches to the first symmetry axis L from the bottom surface 31 to the direction far away from the bottom surface 31, the first curved surface 32 is symmetrically arranged along the first symmetry axis L, and the first curved surface 32 is formed by enclosing a plurality of first circular arcs 321; the second curved surface 33 is symmetrically arranged along the first symmetry axis L, is arranged opposite to the bottom surface 31, and is arranged above the bottom surface 31 far away from the functional region 13, and the second curved surface 33 protrudes towards the bottom surface 31; the third curved surface 34 is symmetrically arranged along the first symmetry axis L, the third curved surface 34 is formed by a plurality of second arcs 341, a first side peripheral edge of the third curved surface 34 is connected with a top peripheral edge of the second curved surface 33 far away from the bottom surface 31, and a second side peripheral edge of the third curved surface 34 is connected with a peripheral edge of the second curved surface 33. Optionally, the first curved surface 32 and the third curved surface 34 are transitionally connected by the rounded corner 4, which is beneficial to the preparation of the light transmission mechanism 3.
Specifically, a semiconductor generating ultraviolet light is arranged in the functional region 13, and the generated ultraviolet light is reflected by a reflective film on the inner wall of the reflective mechanism 2 and then emitted from the light-transmitting mechanism 3. Ultraviolet light enters the first curved surface 32 surrounding area from the bottom surface 31, most of the ultraviolet light is totally reflected by the first curved surface 32, the totally reflected ultraviolet light is converged and enters the third curved surface 34 surrounding area, and after passing through the second curved surface 33, a small part of the ultraviolet light is directly emitted from the second curved surface 33, most of the rest ultraviolet light is reflected by the second curved surface 33 and then is emitted in the third curved surface 34 surrounding area, and finally the ultraviolet light is diffused by the third curved surface 34, so that the emitting angle of the ultraviolet light from the second curved surface 33 is further increased, and 360-degree light emitting at the third curved surface 34 of the light-transmitting mechanism 3 is realized. According to the ultraviolet semiconductor packaging structure, ultraviolet rays can be totally emitted on the surface of the light transmission mechanism 3, so that most of the ultraviolet rays are collected at the top of the light transmission mechanism 3 and form wide-angle (360 DEG) light emission after reflection and diffusion. In order to realize the wide-angle light emitting effect of the ultraviolet semiconductor, the invention does not need to add redundant ultraviolet semiconductor light emitting structures at other angles, can realize 360-degree light emitting by matching the existing ultraviolet semiconductor light emitting structures with the light transmitting structures, and is easy for batch production while reducing the cost.
In an alternative embodiment, the third curved surface 34 is equivalent to a lens for light diffusion, and the third curved surface 34 is preferably a spherical surface, so that the second arcs 341 forming the third curved surface 34 are concentric (i.e. the spherical center of the third curved surface 34), and the spherical center of the third curved surface 34 is located on the first symmetry axis L. Preferably, the second curved surface 33 is also a spherical surface, and the center of the sphere of the second curved surface 33 is located on the first symmetry axis L. Preferably, the bottom surface 31 is circular, the radius of the bottom surface 31 is 1.2-3mm, the radius of the first circular arc 321 is 140-180mm, the radius of the second curved surface 33 is 5-15mm, the radius of the third curved surface 34 is 5-9mm, and the distance from the spherical center of the third curved surface 34 to the bottom surface 31 is 50-100mm; in the embodiment of the present invention, the radius of the bottom surface 31 is 1.45mm, the radius of the first arc 321 is 157mm, the radius of the second curved surface 33 is 8mm, the radius of the third curved surface 34 is 6.14mm, and the distance from the center of the third curved surface 34 to the bottom surface 31 is 70mm.
In an alternative embodiment, the light transmission means 3 is detachably mounted on the light reflecting means 2. The top of the reflection mechanism 2 far away from one side of the substrate 1 is provided with a conductive part 5, generally, the conductive part 5 is made of copper material, and the conductive part 5 is surrounded along the top of the reflection mechanism 2 to form a circle, including the inner side close to one side of the functional region 13. Optionally, the light-transmitting mechanism 3 is screwed with the conductive portion 5, the inner side of the conductive portion 5 is provided with a first thread 51, the bottom of the first curved surface 32 of the light-transmitting mechanism 3, which is close to the bottom surface 31, is provided with a second thread (not shown), and the light-transmitting mechanism 3 and the light-reflecting mechanism 2 are screwed and fixed through the first thread 51 and the second thread which are matched with each other. Optionally, the depth of the first thread 51 is 100-200um, and the number of turns of the first thread 51 is 3.5. Of course, the conductive part 5 and the light transmission mechanism 3 may be fixed by other mechanical connection structures, such as snap-fit. The light transmission mechanism 3 is mechanically connected to the light reflection mechanism 2, so that the problem that an ultraviolet semiconductor is not firmly fixed with the functional area 13 due to a heating step in the traditional inorganic packaging process is solved, and the reliability of ultraviolet semiconductor packaging is improved.
Based on the above ultraviolet semiconductor package structure, referring to fig. 4, the present invention further provides an ultraviolet semiconductor package device, which includes an ultraviolet semiconductor package structure and at least one ultraviolet semiconductor light emitting chip 210 disposed in the functional region 13 of the ultraviolet semiconductor package structure, wherein two electrodes of the ultraviolet semiconductor light emitting chip 210 are respectively connected to the first bonding pad 141 and the second bonding pad 141 in the functional region 13. For the high-power ultraviolet semiconductor packaging device, a plurality of ultraviolet semiconductor light-emitting chips 210 can be arranged, and a plurality of groups of openings 14 are arranged in the corresponding functional regions 13. Referring to fig. 3, it is shown that the ultraviolet light can be emitted from the top 360 ° of the light-transmitting mechanism 3 finally as the result of the optical simulation of the ultraviolet semiconductor package device according to the embodiment of the present invention by the optical software "LightTools".
Referring to fig. 4, the present invention further provides a method for manufacturing an ultraviolet semiconductor package device, including the following steps:
step S100, providing a substrate 1, where the substrate 1 has a first surface 11 and a second surface 12 disposed opposite to each other, and a plurality of functional regions 13 are formed on the first surface 11.
Step S200, manufacturing the light reflecting mechanisms 2 corresponding to the functional areas 13 one by one, and enclosing the light reflecting mechanisms 2 in the functional areas 13.
Specifically, in the process of preparing the substrate 1, an ALN ceramic plate with the thickness of 0.38-0.6mm is taken. At least one set of openings 14 is formed by using a laser, and the bonding pads 141, the expansion layer 142 and the conductive structures 143 are formed in the first surface 11, the second surface 12 and the openings 14 to form the functional regions 13, although the functional regions 13 may be formed after the reflective mechanism 2 is prepared. The diameter of the opening 14 is 80-120um, and the number of the openings 14 can be 2, 4, 6, 8, etc., and the specific number is determined according to the required power. In the process of preparing the reflecting mechanism 2 on the substrate 1, taking the ALN green sheets, and pressing the ALN green sheets into the dam with the inner wall in the arc shape by using a mold in a pre-forming furnace by adopting a high-temperature ceramic co-sintering method.
In step S300, a conductive part 5 is disposed on the top of the reflector 2 away from the first surface 11.
Specifically, the top of one side of the light reflecting mechanism 2, which is far away from the substrate 1, is plated with Cu, and the thickness of the Cu is 500um.
Step S400, providing an ultraviolet light emitting device, and fixing the ultraviolet light emitting device in the functional region 13.
Step S500, preparing the light transmission mechanism 3 by adopting an injection molding method, and installing the light transmission mechanism 3 on the light reflection mechanism 2.
Specifically, the injection molding mode is adopted, and the fused quartz is injected into a graphite grinding tool, and is polished into the light transmission mechanism 3 after being cooled. The light reflecting mechanism 2 is fixed by using a matched clamp, a circle of copper on the inner side of the conductive part 5 is tapped by a tapping machine to form a first thread 51, the number of turns of the thread is 3.5, and the thread depth of the first thread 51 is 100-200 mu m. In the vacuum or inert gas cavity, the light reflecting mechanism 2 is fixed by using a clamp, the top spherical area of the light reflecting mechanism 2 is sucked by using a rubber suction nozzle on a machine table, and the light reflecting mechanism 2 is placed on the light reflecting mechanism 2 and screwed into the conductive part 5 to finish the packaging of a finished product.
All possible combinations of the technical features in the above embodiments may not be described for the sake of brevity, but should be considered as being within the scope of the present disclosure as long as there is no contradiction between the combinations of the technical features.
The above examples only express preferred embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. An ultraviolet semiconductor package structure, comprising:
the substrate comprises a first surface and a second surface which are oppositely arranged, and the first surface forms a functional area;
the reflecting mechanism is arranged around the functional area;
the light transmitting mechanism is arranged on one side, far away from the first surface, of the light reflecting mechanism so as to cover the top, far away from the first surface, of the functional area;
the light transmission mechanism is of an axisymmetric structure and symmetrically distributed along a first symmetric axis, the light transmission mechanism comprises a bottom surface opposite to the functional region, a first curved surface extending from the periphery of the bottom surface to the back of the functional region, a second curved surface opposite to the bottom surface and a third curved surface connecting the periphery of the top end of the first curved surface far away from the bottom surface and the periphery of the second curved surface, and the projection of the periphery of the top end of the first curved surface along the direction of the first symmetric axis falls on the bottom surface;
the first curved surface, the second curved surface and the third curved surface are all symmetrically arranged along the first symmetric axis; the first curved surface is enclosed by a plurality of first circular arcs and establishes and form, the third curved surface is enclosed by a plurality of second circular arcs and establishes and form, first circular arc with the second circular arc all faces away from first symmetry axis direction protrusion, the second curved surface orientation the bottom surface protrusion, the bottom surface with first surface parallel arrangement.
2. The ultraviolet semiconductor package structure of claim 1, wherein the second arcs are concentric, and the centers of the second arcs are located on the first symmetry axis and form the third curved surface as a spherical surface;
and/or the second curved surface is a spherical surface, and the center of the second curved surface is positioned on the first symmetry axis.
3. The ultraviolet semiconductor package structure of claim 2, wherein the bottom surface is circular, the radius of the bottom surface is 1.2-3mm, the radius of the first circular arc is 140-180mm, the radius of the second curved surface is 5-15mm, the radius of the third curved surface is 5-9mm, and the distance from the bottom surface to the center of the sphere of the third curved surface is 50-100mm.
4. The ultraviolet semiconductor package structure of claim 1, wherein the light transmission mechanism is made of quartz, and the first curved surface and the third curved surface are connected by a rounded corner transition.
5. The uv semiconductor package assembly of claim 1, wherein the light transmitting means is detachably mounted on a side of the light reflecting means away from the substrate.
6. The ultraviolet semiconductor package structure of claim 5, wherein a top portion of the light reflecting mechanism away from the substrate is provided with a conductive portion, the conductive portion is provided with a first thread, the light transmitting mechanism is provided with a second thread, and the light transmitting mechanism and the light reflecting mechanism are screwed together by the first thread and the second thread.
7. The ultraviolet semiconductor package structure of claim 6, wherein the conductive portion is disposed around the top of the reflective mechanism, including an inner side near the functional region, the first thread is disposed on the inner side of the conductive portion, and a thread depth of the first thread is 100-200um.
8. The ultraviolet semiconductor package structure of claim 1, wherein the inner wall of the reflective mechanism near the functional region is a circular arc shape recessed toward the substrate, and a reflective film is disposed on the inner wall of the reflective mechanism.
9. An ultraviolet semiconductor packaging device, comprising the ultraviolet semiconductor packaging structure according to any one of claims 1 to 8 and at least one ultraviolet semiconductor light emitting chip arranged in the functional region of the ultraviolet semiconductor packaging structure, wherein two electrodes of the ultraviolet semiconductor light emitting chip are respectively connected with a first bonding pad and a second bonding pad in the ultraviolet semiconductor packaging structure.
10. A preparation method of an ultraviolet semiconductor packaging device is characterized by comprising the following steps:
providing a substrate, wherein the substrate is provided with a first surface and a second surface which are oppositely arranged, and a plurality of functional areas are formed on the first surface;
manufacturing light reflecting mechanisms which correspond to the functional areas one by one, and enclosing the light reflecting mechanisms in the functional areas;
arranging a conductive part on the top of the light reflecting mechanism far away from the first surface;
providing an ultraviolet light-emitting element, and fixing the ultraviolet light-emitting element in the functional area;
preparing a light transmission mechanism by adopting an injection molding method, and mounting the light transmission mechanism on the light reflection mechanism; light transmission mechanism just follows first symmetry axisymmetric distribution for the axisymmetric structure, light transmission mechanism include with the relative bottom surface of functional area, certainly the bottom surface periphery is to the back of the first curved surface that the functional area extends, with the relative second curved surface that sets up of bottom surface and connection first curved surface is kept away from the top periphery of bottom surface with the circumferential third curved surface of second curved surface, the top periphery of first curved surface is followed the projection of first symmetry axis direction falls in the bottom surface, first curved surface the second curved surface and the third curved surface is all followed first symmetry axisymmetric setting, first curved surface is enclosed by a plurality of first circular arcs and establishes and is formed, the third curved surface is enclosed by a plurality of second circular arcs and establishes, first circular arc with the second circular arc all faces and deviates from first symmetry axis direction protrusion, the second curved surface orientation the bottom surface protrusion, the bottom surface with first surface parallel arrangement.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101140965A (en) * | 2006-09-08 | 2008-03-12 | 北京大学 | Semiconductor light-emitting diode without bracket |
| CN203967121U (en) * | 2014-06-26 | 2014-11-26 | Tcl光电科技(惠州)有限公司 | LED lamp, backlight module and liquid crystal indicator |
| CN110957408A (en) * | 2018-08-17 | 2020-04-03 | 新世纪光电股份有限公司 | Light emitting device and method for manufacturing the same |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20170121777A (en) * | 2016-04-25 | 2017-11-03 | 삼성전자주식회사 | Semiconductor light emitting device |
| KR102546556B1 (en) * | 2018-05-28 | 2023-06-22 | 엘지이노텍 주식회사 | Semiconductor device package and light irradiation apparatus including the same |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101140965A (en) * | 2006-09-08 | 2008-03-12 | 北京大学 | Semiconductor light-emitting diode without bracket |
| CN203967121U (en) * | 2014-06-26 | 2014-11-26 | Tcl光电科技(惠州)有限公司 | LED lamp, backlight module and liquid crystal indicator |
| CN110957408A (en) * | 2018-08-17 | 2020-04-03 | 新世纪光电股份有限公司 | Light emitting device and method for manufacturing the same |
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