CN101916048B - 曝光参数的决定方法以及曝光方法 - Google Patents

曝光参数的决定方法以及曝光方法 Download PDF

Info

Publication number
CN101916048B
CN101916048B CN201010243740XA CN201010243740A CN101916048B CN 101916048 B CN101916048 B CN 101916048B CN 201010243740X A CN201010243740X A CN 201010243740XA CN 201010243740 A CN201010243740 A CN 201010243740A CN 101916048 B CN101916048 B CN 101916048B
Authority
CN
China
Prior art keywords
exposure
optimization
graticule
parameter
occasion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201010243740XA
Other languages
English (en)
Chinese (zh)
Other versions
CN101916048A (zh
Inventor
辻田好一郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of CN101916048A publication Critical patent/CN101916048A/zh
Application granted granted Critical
Publication of CN101916048B publication Critical patent/CN101916048B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN201010243740XA 2005-07-15 2006-07-14 曝光参数的决定方法以及曝光方法 Expired - Fee Related CN101916048B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005207527A JP4336671B2 (ja) 2005-07-15 2005-07-15 露光パラメータの決定をコンピュータに実行させるプログラム、露光パラメータを決定する決定方法、露光方法及びデバイス製造方法。
JP2005-207527 2005-07-15

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN2006101063747A Division CN1896877B (zh) 2005-07-15 2006-07-14 决定方法及曝光方法

Publications (2)

Publication Number Publication Date
CN101916048A CN101916048A (zh) 2010-12-15
CN101916048B true CN101916048B (zh) 2012-05-23

Family

ID=37609419

Family Applications (2)

Application Number Title Priority Date Filing Date
CN2006101063747A Expired - Fee Related CN1896877B (zh) 2005-07-15 2006-07-14 决定方法及曝光方法
CN201010243740XA Expired - Fee Related CN101916048B (zh) 2005-07-15 2006-07-14 曝光参数的决定方法以及曝光方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN2006101063747A Expired - Fee Related CN1896877B (zh) 2005-07-15 2006-07-14 决定方法及曝光方法

Country Status (5)

Country Link
US (1) US8339579B2 (enExample)
JP (1) JP4336671B2 (enExample)
KR (1) KR100878613B1 (enExample)
CN (2) CN1896877B (enExample)
TW (1) TWI314754B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009302206A (ja) 2008-06-11 2009-12-24 Canon Inc 露光パラメータの決定方法、露光パラメータを決定するためのプログラム、露光方法及びデバイス製造方法
JP5215812B2 (ja) * 2008-10-29 2013-06-19 キヤノン株式会社 照明条件の決定方法、プログラム、露光方法及びデバイス製造方法
JP2011049232A (ja) * 2009-08-25 2011-03-10 Renesas Electronics Corp 露光装置、露光方法及び半導体装置の製造方法
JP5574749B2 (ja) * 2010-02-24 2014-08-20 キヤノン株式会社 露光条件及びマスクパターンのうち少なくとも一方を決定する決定方法及びプログラム、情報処理装置
JP5835968B2 (ja) 2011-07-05 2015-12-24 キヤノン株式会社 決定方法、プログラム及び露光方法
JP5656905B2 (ja) * 2012-04-06 2015-01-21 キヤノン株式会社 決定方法、プログラム及び情報処理装置
JP6108693B2 (ja) * 2012-06-08 2017-04-05 キヤノン株式会社 パターン作成方法
US8815498B2 (en) * 2012-08-22 2014-08-26 Nanya Technology Corp. Method of forming tight-pitched pattern
CN109683447B (zh) * 2019-02-18 2021-01-22 中国科学院微电子研究所 一种光源掩模协同优化初始光源的确定方法及装置
CN111367148B (zh) * 2020-04-10 2022-04-12 联合微电子中心有限责任公司 曲线图形光学邻近修正方法
CN111694227B (zh) * 2020-06-03 2023-03-21 长沙麓邦光电科技有限公司 光控系统及方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6100515A (en) * 1993-06-14 2000-08-08 Nikon Corporation Scanning exposure method and apparatus in which a mask and a substrate are moved at different scan velocities and exposure parameters are varied

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5465220A (en) 1992-06-02 1995-11-07 Fujitsu Limited Optical exposure method
JP3330648B2 (ja) 1992-10-06 2002-09-30 富士通株式会社 光源形状の最適化方法
US5705299A (en) * 1992-12-16 1998-01-06 Texas Instruments Incorporated Large die photolithography
KR100346448B1 (ko) * 1994-12-29 2002-11-23 주식회사 하이닉스반도체 반도체소자용노광마스크
US5680588A (en) 1995-06-06 1997-10-21 International Business Machines Corporation Method and system for optimizing illumination in an optical photolithography projection imaging system
US5723233A (en) * 1996-02-27 1998-03-03 Lsi Logic Corporation Optical proximity correction method and apparatus
US6453452B1 (en) * 1997-12-12 2002-09-17 Numerical Technologies, Inc. Method and apparatus for data hierarchy maintenance in a system for mask description
US6128067A (en) * 1998-04-28 2000-10-03 Kabushiki Kaisha Toshiba Correcting method and correcting system for mask pattern
JP3718058B2 (ja) * 1998-06-17 2005-11-16 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
SE517345C2 (sv) * 1999-01-18 2002-05-28 Micronic Laser Systems Ab Metod och system för tillverkande av stora skärmpaneler med förbättrad precision
TW552561B (en) 2000-09-12 2003-09-11 Asml Masktools Bv Method and apparatus for fast aerial image simulation
JP2002134396A (ja) 2000-10-25 2002-05-10 Sony Corp 半導体装置の製造方法および半導体パターン自動調節装置
JP2002190443A (ja) * 2000-12-20 2002-07-05 Hitachi Ltd 露光方法およびその露光システム
JP2002319539A (ja) 2001-02-13 2002-10-31 Nikon Corp 仕様決定方法及びコンピュータシステム
JP4436029B2 (ja) 2001-02-13 2010-03-24 株式会社ニコン 投影光学系の製造方法及び調整方法、露光装置及びその製造方法、デバイス製造方法、並びにコンピュータシステム
TW591694B (en) 2001-02-13 2004-06-11 Nikon Corp Specification determining method, making method and adjusting method of projection optical system, exposure apparatus and making method thereof, and computer system
JP4266079B2 (ja) 2001-04-09 2009-05-20 株式会社東芝 原版とその作製方法及びその原版を用いた露光方法
WO2002088843A2 (en) * 2001-04-24 2002-11-07 Canon Kabushiki Kaisha Exposure method and apparatus
TWI252516B (en) * 2002-03-12 2006-04-01 Toshiba Corp Determination method of process parameter and method for determining at least one of process parameter and design rule
JP3913151B2 (ja) 2002-09-10 2007-05-09 キヤノン株式会社 露光装置のパラメータの値を最適化する方法及びシステム、露光装置及び露光方法
EP1467252A1 (en) * 2003-04-07 2004-10-13 ASML Netherlands B.V. Device manufacturing method and mask set for use in the method
US7026106B2 (en) 2003-04-09 2006-04-11 Taiwan Semiconductor Manufacturing Co., Ltd. Exposure method for the contact hole
TWI234195B (en) 2003-04-16 2005-06-11 Nikon Corp Pattern determining method and system, method of manufacturing mask, adjusting method of imaging performance, exposure method and apparatus, information recording medium
US7355673B2 (en) 2003-06-30 2008-04-08 Asml Masktools B.V. Method, program product and apparatus of simultaneous optimization for NA-Sigma exposure settings and scattering bars OPC using a device layout
JP4599048B2 (ja) 2003-10-02 2010-12-15 川崎マイクロエレクトロニクス株式会社 半導体集積回路のレイアウト構造、半導体集積回路のレイアウト方法、およびフォトマスク
JP4351928B2 (ja) * 2004-02-23 2009-10-28 株式会社東芝 マスクデータの補正方法、フォトマスクの製造方法及びマスクデータの補正プログラム

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6100515A (en) * 1993-06-14 2000-08-08 Nikon Corporation Scanning exposure method and apparatus in which a mask and a substrate are moved at different scan velocities and exposure parameters are varied

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP特开2000-40654A 2000.02.08
JP特开2003-7613A 2003.01.10

Also Published As

Publication number Publication date
TWI314754B (en) 2009-09-11
KR20070009417A (ko) 2007-01-18
JP2007027418A (ja) 2007-02-01
US8339579B2 (en) 2012-12-25
TW200715372A (en) 2007-04-16
CN1896877A (zh) 2007-01-17
CN1896877B (zh) 2010-12-29
JP4336671B2 (ja) 2009-09-30
KR100878613B1 (ko) 2009-01-15
CN101916048A (zh) 2010-12-15
US20070013896A1 (en) 2007-01-18

Similar Documents

Publication Publication Date Title
CN101258498B (zh) 用于形成光刻工艺的焦点曝光模型的系统和方法
KR101096145B1 (ko) 모델-기반 리소그래피 안내 레이아웃 설계를 수행하는 방법들
US7735053B2 (en) Correction method and correction system for design data or mask data, validation method and validation system for design data or mask data, yield estimation method for semiconductor integrated circuit, method for improving design rule, mask production method, and semiconductor integrated circuit production method
TWI315027B (en) Mask designing method, and exposure method for illuminatiing a mask and exposing an object
US20070121090A1 (en) Lithographic apparatus and device manufacturing method
JP5513325B2 (ja) 決定方法、露光方法及びプログラム
CN101916048B (zh) 曝光参数的决定方法以及曝光方法
TW200424800A (en) Lithographic apparatus and method for optimizing an illumination source using photolithographic simulations
US9779186B2 (en) Methods for performing model-based lithography guided layout design
JP5513324B2 (ja) 決定方法、露光方法及びプログラム
TW200424793A (en) A method for determining parameters for lithographic projection, a computer system and computer program therefor, a method of manufacturing a device and a device manufactured thereby
US9310768B2 (en) Method for synthesis and formation of a digital hologram for use in microlithography
TW201740186A (zh) 用以模擬產生晶圓結構的微影製程的方法及裝置
US8234600B2 (en) Computer readable storage medium storing program for generating reticle data, and method of generating reticle data
JP3977544B2 (ja) 半導体装置の回路設計方法およびプログラム記憶媒体
JP2020518845A (ja) 光学メトロロジの性能を測定するための方法、基板、及び装置
KR20130105388A (ko) 생성 방법, 저장 매체 및 정보 처리 장치
Bodendorf et al. Impact of measured pupil illumination fill distribution on lithography simulation and OPC models
JP4838866B2 (ja) 露光パラメータ及びレチクルパターンを決定する決定方法、露光方法及びデバイス製造方法。
Lee et al. Image-based overlay target design using a grating intersection
US7463347B2 (en) Simulator of optical intensity distribution, computer implemented method for simulating the optical intensity distribution, method for collecting mask pattern, and computer program product for the simulator
US8701053B2 (en) Decision method, storage medium and information processing apparatus
JP2004012932A (ja) マスクの製造方法、露光方法及びデバイス製造方法
JP5980065B2 (ja) マスクデータの作成方法、プログラム、情報処理装置、マスク製造方法、露光方法及びデバイス製造方法
US20050278155A1 (en) Method of simulation of an exposure process

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120523

Termination date: 20200714