CN101901863A - 大功率低光衰高抗静电发光二极管及其制备方法 - Google Patents

大功率低光衰高抗静电发光二极管及其制备方法 Download PDF

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CN101901863A
CN101901863A CN2010101620357A CN201010162035A CN101901863A CN 101901863 A CN101901863 A CN 101901863A CN 2010101620357 A CN2010101620357 A CN 2010101620357A CN 201010162035 A CN201010162035 A CN 201010162035A CN 101901863 A CN101901863 A CN 101901863A
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黄少彬
许永志
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HAN TANG GAO JING OPTOELECTRONICS CO Ltd
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
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    • H01—ELECTRIC ELEMENTS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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Abstract

一种大功率低光衰高抗静电发光二极管及其制备方法，所述发光二极管由铜基板(2)、带散热鳍片的铜制支架(3)、硅衬底大功率倒装芯片(1)、金线(4)、荧光材料(6)和硅胶透镜(5)组成；其制备方法包括：在带散热鳍片的铜制支架碗杯上点胶、固定硅衬底大功率倒装芯片、焊接银线、点荧光胶并烘干、外层包覆硅胶并烘干、将支架底座焊接在基板上。本方法由于采用硅衬底大功率倒装芯片、在带散热鳍片的铜制支架和铜基板等综合工艺措施，较好地解决了大功率发光二极管的散热问题，其光衰也大大降低，达到1000小时零光衰。本发明大功率低光衰高抗静电发光二极管可广泛用于室内、外照明，景观装饰，矿山，抢险，军事等领域。

Description

大功率低光衰高抗静电发光二极管及其制备方法
技术领域
本发明涉及一种大功率低光衰高抗静电发光二极管及其制备方法，属光电器件技术领域。
背景技术
大功率LED产品是目前最有可能取代传统光源的新型照明元件。但由于现有大功率LED产品主要存在使用寿命短，光衰严重等缺点，导致大功率LED产品不能被大量用于照明领域。造成上述问题的根本原因主要是由于目前大功率LED产品的散热问题无法得到满意的解决。对于现有的LED光效水平而言，由于输入电能的80％左右转变成为热量，且LED芯片面积小，因此，芯片散热是LED封装必须解决的关键问题。主要包括芯片布置、封装材料选择(基板材料、热界面材料)与工艺、热沉设计等。
本实用新型是在旧有大功率LED产品的基础上，采用多项散热技术对原有产品进行改进，使产品的散热能力大大提升，从而极大地提升了产品的可靠性。
发明内容
本发明的目的是，根据现有大功率发光二极管存在的由于散热问题没有得到很好解决而导致使用寿命短，光衰严重等缺点，本发明推出一种大功率低光衰高抗静电发光二极管，并公开其制备方法，以弥补现有大功率发光二极管的不足。
本发明的技术方案是：
本发明大功率低光衰高抗静电发光二极管，应具备：
带散热鳍片的铜制支架；
安装在带散热鳍片的铜制支架上的硅衬底大功率倒装芯片；
连接芯片与电极的金线；
承载带散热鳍片的铜制支架的铜基板；
复盖在芯片上的荧光材料；
复盖在芯片和荧光材料上的球形硅胶透镜。
本发明大功率低光衰高抗静电发光二极管的制备方法为：
1)准备带散热鳍片的铜制支架；
2)点胶：在带散热鳍片的铜制支架碗杯中央点银胶，为提高导热性能，选用优质高导热银胶；
3)固晶：将硅衬底大功率倒装芯片放在带散热鳍片的铜制支架碗杯中央的银胶上，并将其粘结固定好，然后进行烘烤固化；
4)焊线：将金线焊接在芯片和电极上，通过金线将芯片与电极连接起来；
5)点荧光胶：将硅胶与荧光粉颗粒配成荧光胶，在芯片上点荧光胶，并将荧光胶烘干固化，包裹芯片；
6)外层包覆硅胶：在复盖荧光材料的芯片外层包覆硅胶并烘干固化，形成球状硅胶透镜；
7)焊接支架：在铜基板上刷薄锡层，放置带散热鳍片的铜制支架在其上，加热使带散热鳍片的铜制支架底座与铜基板粘合。
本发明采用硅衬底大功率倒装芯片，由于其芯片底部为面积大于芯片本身的硅片，从而可将芯片产生的热量通过硅片迅速传导到与硅片相连接的带散热鳍片的铜制支架，并通过铜基板将热量传递出去，可有效降低芯片热量。此类芯片散热性能良好，出光效率高，抗静电能力强等特点。其抗静电能力由普通大功率芯片的3000V(人体模式)提高为4500V(人体模式)。
本发明采用带散热鳍片的铜制支架，可将其散热效果提升30％左右，有效降低产品温度。而带散热鳍片的铜制支架与铜基板的粘合，由原来的使用高导热硅脂粘合更换为以薄锡层进行粘合，可将产品的导热及散热能力提升20％以上。
本发明外层出光通路(透镜)采用全硅胶进行包覆，改变了以往先盖PC材质的透镜，再在其中空部份填充硅胶的工艺，大大提升产品的整体耐温抗热性能。
本发明与现有技术比较的有益效果是，由于本发明的芯片采用硅衬底大功率芯片，不仅其散热性能良好，出光效率高，而且抗静电能力强，其抗静电能力由普通大功率芯片的3000V(人体模式)提高为4500V(人体模式)。由于采用了带散热鳍片的铜制支架和铜制基板，并且在支架底座与铜制基板之间的接触面采用薄锡焊连接，大大提高了整个器件的的散热效果。本方法由于采用硅衬底大功率芯片、在带散热鳍片的铜制支架和铜基板等综合工艺措施，较好地解决了大功率发光二极管的散热问题，其光衰也大大降低，达到1000小时零光衰。
本发明大功率低光衰高抗静电发光二极管可广泛用于室内、外照明，景观装饰，矿山，抢险，军事等领域。
附图说明
附图为本发明大功率低光衰高抗静电发光二极管的结构示意图
图中图号：(1)硅衬底大功率倒装芯片；(2)铜基板；(3)带散热鳍片的铜制支架；(4)金线；(5)硅胶透镜；(6)荧光材料。
具体实施方式
本发明实施例为1W低光衰高抗静电发光二极管。
本实施例的结构如附图所示，本实施例由硅衬底大功率倒装芯片(1)、铜基板(2)、带散热鳍片的铜制支架(3)、金线(4)、硅胶透镜(5)、荧光材料(6)所组成。
其制作步骤为：
1)准备带散热鳍片的铜制支架；
2)点胶：在带散热鳍片的铜制支架碗杯中央点银胶，为提高导热性能，选用优质高导热银胶；
3)固晶：将1W硅衬底大功率倒装芯片放在带散热鳍片的铜制支架碗杯中央银胶上，粘结固定好；
4)焊线：将金线焊接在芯片和电极上，通过金线将芯片与电极连接起来，本实施例采用2.0MIL线径金线作为引线，在保证电通路顺畅通无阻的同时，也能起到导热的作用；
5)点荧光胶：在芯片上点荧光胶，并将荧光胶烘干固化，包裹芯片；
6)外层包覆硅胶：在芯片外层包覆硅胶并干燥固化，形成球状硅胶透镜；
7)焊接支架：在铜基板上刷薄锡层，放置带散热鳍片的铜制支架在其上，加热使带散热鳍片的铜制支架底座与铜基板粘合。
经过上述步骤获得的1W的低光衰高抗静电发光二极管经检测，其光衰为1000小时零衰减，其抗静电性能达到4500V(人体模式)，光通量达120LM。

Claims (2)

1.一种大功率低光衰高抗静电发光二极管，其特征是，所述发光二极管应具备：
带散热鳍片的铜制支架；
安装在带散热鳍片的铜制支架上的硅衬底大功率倒装芯片；
连接芯片与电极的金线；
承载带散热鳍片的铜制支架的铜基板；
复盖在芯片上的荧光材料；
复盖在芯片和荧光材料上的球形硅胶透镜。
2.根据权利要求1所述的一种大功率低光衰高抗静电发光二极管的制备方法，其特征是，所述方法包括以下步骤：
1)准备带散热鳍片的铜制支架；
2)点胶：在带散热鳍片的铜制支架碗杯中央点银胶，为提高导热性能，选用优质高导热银胶；
3)固晶：将硅衬底大功率倒装芯片放在带散热鳍片的铜制支架碗杯中央的银胶上，并将其粘结固定好，然后进行高温烘烤固化；
4)焊线：将金线焊接在芯片和电极上，通过金线将芯片与电极连接起来；
5)点荧光胶：将硅胶与荧光粉颗粒配成荧光胶，在芯片上点荧光胶，并将荧光胶烘干固化，包裹芯片；
6)外层包覆硅胶：在复盖荧光材料的芯片外层包覆硅胶并烘干固化，形成球状硅胶透镜；
7)焊接支架：在铜基板上刷薄锡层，放置带散热鳍片的铜制支架在其上，加热使带散热鳍片的铜制支架底座与铜基板粘合。
CN2010101620357A 2010-05-04 2010-05-04 大功率低光衰高抗静电发光二极管及其制备方法 Pending CN101901863A (zh)

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Publication number Priority date Publication date Assignee Title
CN102644888A (zh) * 2012-04-01 2012-08-22 深圳市华星光电技术有限公司 带静电防护功能的led灯及用该led灯的背光模组
CN103579420A (zh) * 2013-10-18 2014-02-12 武宁华阳实业有限公司 一种led节能灯的封装工艺
CN107068834A (zh) * 2016-12-27 2017-08-18 江苏稳润光电科技有限公司 一种带凸透镜的led产品

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WO2009096742A2 (ko) * 2008-01-30 2009-08-06 Sun-Wave Co., Ltd 핀 타입형 파워 엘이디(led) 방열구조
US20100051985A1 (en) * 2008-09-04 2010-03-04 Samsung Electro-Mechanics Co., Ltd. Led package

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002252373A (ja) * 2001-02-26 2002-09-06 Nichia Chem Ind Ltd 表面実装型発光素子およびそれを用いた発光装置
US20070176190A1 (en) * 2005-07-20 2007-08-02 Hiroyuki Takayama Optical semiconductor device and circuit
CN101060157A (zh) * 2006-04-17 2007-10-24 三星电机株式会社 发光二极管封装件及其制造方法
WO2009096742A2 (ko) * 2008-01-30 2009-08-06 Sun-Wave Co., Ltd 핀 타입형 파워 엘이디(led) 방열구조
US20100051985A1 (en) * 2008-09-04 2010-03-04 Samsung Electro-Mechanics Co., Ltd. Led package

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102644888A (zh) * 2012-04-01 2012-08-22 深圳市华星光电技术有限公司 带静电防护功能的led灯及用该led灯的背光模组
CN103579420A (zh) * 2013-10-18 2014-02-12 武宁华阳实业有限公司 一种led节能灯的封装工艺
CN107068834A (zh) * 2016-12-27 2017-08-18 江苏稳润光电科技有限公司 一种带凸透镜的led产品

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Application publication date: 20101201