CN201946596U - 一种具有热能与电能分离式散热的led光源封装结构 - Google Patents

一种具有热能与电能分离式散热的led光源封装结构 Download PDF

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CN201946596U
CN201946596U CN 201020660347 CN201020660347U CN201946596U CN 201946596 U CN201946596 U CN 201946596U CN 201020660347 CN201020660347 CN 201020660347 CN 201020660347 U CN201020660347 U CN 201020660347U CN 201946596 U CN201946596 U CN 201946596U
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led
heat
led wafer
electric energy
light source
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葛伟
邵丽娟
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PARA LIGHT NANJING ELECTRONICS CO Ltd
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PARA LIGHT NANJING ELECTRONICS CO Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

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Abstract

本实用新型提供一种具有热能与电能分离式散热的LED光源封装结构,其特征是包括支架外壳、金线、LED晶片、导热柱、导电层、外封硅,其中支架外壳底座内安放碗杯凹槽,该碗杯凹槽内安放LED晶片,安放LED晶片区域与金线引出点的位置是隔离的,LED晶片与导热柱相接,LED晶片与导电层之间通过金线焊接,外封胶灌装LED晶片。优点:适用于单晶或多晶的封装,具有良好的散热能力。热能通过中间安放LED晶片金属片直接导出,从而实现热能与电能真正意义上的分离,降低LED的光衰,延长LED的寿命,为LED后端运用解决了因热能而引起光衰的问题。

Description

一种具有热能与电能分离式散热的LED光源封装结构
技术领域
本实用新型涉及的是一种具有热能与电能分离式散热的LED光源封装结构,属于LED封装技术领域。
技术背景
第四代光源-半导体照明时代已来临,而传统照明难以满足现代人们的“节能环保,持久耐用”的生活理念和生活需要。普通LED由于封装结构局限性,导电极在导电的同时也起到导热的作用,使得散热效果不佳,若使用在照明灯管中或作为背光源运用在TV、Note Book背光上热量难以散去,其结温的上升会使发光复合的几率下降,亮度会下降,寿命和输出光通量也会随着温度的升高而下降。若PN结产生的热量能尽快的散发出去,不仅在“健康环保、低碳时尚、耐用节能的基础上大大的提高LED产品的发光效率,同时也大大提高了LED产品的可靠性和寿命,从而为人类照明事业做出贡献。基于上述要求,特别设计出一种具有热能与电能分离式散热的LED光源封装结构
发明内容
本实用新型提供一种具有热能与电能分离式散热的LED光源封装结构。其目的旨在克服现有封装结构中LED晶片PN结产生的热量无法很快的散发出去,且热能和电能共用一条通路导致散热效果不佳等缺陷。本结构中,导电通路和导热通路互相独立,而不是共用,采用与晶片直接相连的专用导热柱进行散热,能够大幅度提高散热性能。
本实用新型的技术解决方案:其结构是包括支架外壳、金线、LED晶片、导热柱、导电层、外封硅,其中支架外壳底座内安放碗杯凹槽,该碗杯凹槽内安放LED晶片,安放LED晶片区域与金线引出点的位置是隔离的,LED晶片与导热柱相接,LED晶片与导电层之间通过金线焊接,外封胶灌装LED晶片。
本实用新型的有益效果是:由于碗杯内空间较大,灵活性高,可以放置一颗或多颗LED晶片,易于实现LED的集成化、阵列化;热能通过中间安放LED晶片直接导出,而没有通过像传统的LED封装通过电能导出,从而实现热能与电能真正意义上的分离,解决了传统封装方式散热不良的问题,提高成品良率。结构较为简单,导热散热性能良好,无需特殊流程或工艺,降低成本,易于批量化生产。
附图说明
附图1是热电分离封装结构LED支架的正面示意图。
附图2是热电分离封装结构单晶片LED的剖面示意图。
附图3是热电分离封装结构LED的底面示意图。
附图4是热电分离封装结构LED的结构示意图。
附图5是一种单晶片封装结构LED的示意图。
附图6为一种多晶片封装结构LED的示意图。
图中的1是支架外壳、2是晶片、3是导热柱、4是导电层、5是金线、6是外封胶。
具体实施方式
对照附图,其结构是包括支架外壳1、金线5、LED晶片2、导热柱3、外封硅胶6,其中支架外壳1底座内安放碗杯凹槽,该碗杯凹槽内安放LED晶片2,安放LED晶片区域与金线5引出点的位置是隔离的,LED晶片2与导热柱3相接,LED晶片2与导电层4之间通过金线5焊接,外封胶6灌装LED晶片2。
碗杯凹槽两边设置有金属电极,金属电极通过金线与LED晶片的电极连接,且所述支架背面金属散热层裸露在外。
金线含有金元素的导线,直径:25.4微米。
LED晶片间通过并联连接。
LED晶片具有双电极水平结构,两个电极通过两根金线分别引出。
LED晶片是一颗或多颗,单色或多色的组合,形成LED集成化,阵列化。
为了进一步提高导热性能,对支架进行热电分离设计,支架1结构中,导电通路和导热通路互相独立,而不是共用,采用与LED晶片2直接相连的专用导热柱3进行散热,能够大幅度提高散热性能。导热柱为铜合金,热传导系数不小于150W/m*K,导热柱为方柱形,直径在2.0到2.3mm之间。
封装时,LED晶片放置在导热柱正上方,形成良好的热接触,底部用银胶与导热柱接触,银胶的热传导系数不小于40W/m*K。用金线焊接LED晶片的电极和基板上的电极,最后外封硅胶层。在整个热电分离的设计中,其中起散热作用最大的是中间的导热铜柱,通过导通铜柱将LED芯片产生的热量传到底部的散热装置;并且导热铜柱面积越大,相应导热效果会更好。为了便于LED晶片2的封装,支架有一个用于安放所述LED晶片的碗杯凹槽,LED晶片正置于其中;该凹坑为碗杯形,凹槽的深度和面积大小根据晶片需要确定,并且凹槽表面为镀银层,反射率极高,有利于晶片的出光;支架底部两侧具有焊线电极;LED晶片的数量可为一个或多个,并且不受大小、波长的限制。本发明的封装结构可用于单晶片或多晶片的封装。
参照图5,长方形热电分离结构支架在碗杯内固定一颗LED晶片2,晶片与导热铜柱间优先选用高导热性能银胶固定,也可通过共晶焊的方式,有效的降低结构的热阻。晶片与导电区域之间通过金线焊接,最后外封灌封胶用于保护晶片,灌封胶选用透光率高的硅胶,最大限度的减少光损。灌封胶内可以混合一定比例的荧光粉,通过激发特定波长的晶片以达到不同颜色的要求。
参照图6,和图5不同的是,碗杯内固定2颗LED晶片,电路连接方式为两并联,可选用不同波长,不同颜色的各类晶片组合使用,真正形成LED封装的集成化,模组化。

Claims (5)

1.一种具有热能与电能分离式散热的LED光源封装结构,其特征是包括支架外壳、金线、LED晶片、导热柱、导电层、外封硅,其中支架外壳底座内安放碗杯凹槽,该碗杯凹槽内安放LED晶片,安放LED晶片区域与金线引出点的位置是隔离的,LED晶片与导热柱相接,LED晶片与导电层之间通过金线焊接,外封胶灌装LED晶片。
2.根据权利要求1所述的一种具有热能与电能分离式散热的LED光源封装结构,其特征是碗杯凹槽两边设置有金属电极,所述金属电极通过金线与LED晶片的电极连接,且所述支架背面金属散热层裸露在外。
3.根据权利要求1所述的一种具有热能与电能分离式散热的LED光源封装结构,其特征是LED晶片间通过并联连接。
4.根据权利要求1所述的一种具有热能与电能分离式散热的LED光源封装结构,其特征是LED晶片具有双电极水平结构,两个电极通过两根金线分别引出。
5.根据权利要求1所述的一种具有热能与电能分离式散热的LED光源封装结构,其特征是LED晶片是一颗或多颗,单色或多色的组合,形成LED集成化,阵列化。 
CN 201020660347 2010-12-15 2010-12-15 一种具有热能与电能分离式散热的led光源封装结构 Expired - Lifetime CN201946596U (zh)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102646673A (zh) * 2012-03-13 2012-08-22 广东奥其斯科技有限公司 高集成高光效的热电分离功率型发光二极体及封装方法
CN103560197A (zh) * 2013-10-30 2014-02-05 山东明华光电科技有限公司 贴片型热沉式高光效led灯珠
CN103840060A (zh) * 2012-11-26 2014-06-04 梁建忠 一种led支架及led
CN111446317A (zh) * 2020-05-08 2020-07-24 北京金茂绿建科技有限公司 一种pv-led结构

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102646673A (zh) * 2012-03-13 2012-08-22 广东奥其斯科技有限公司 高集成高光效的热电分离功率型发光二极体及封装方法
CN103840060A (zh) * 2012-11-26 2014-06-04 梁建忠 一种led支架及led
CN103560197A (zh) * 2013-10-30 2014-02-05 山东明华光电科技有限公司 贴片型热沉式高光效led灯珠
CN111446317A (zh) * 2020-05-08 2020-07-24 北京金茂绿建科技有限公司 一种pv-led结构

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