CN101897012A - 焊接装置及焊接方法 - Google Patents

焊接装置及焊接方法 Download PDF

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CN101897012A
CN101897012A CN2008801200417A CN200880120041A CN101897012A CN 101897012 A CN101897012 A CN 101897012A CN 2008801200417 A CN2008801200417 A CN 2008801200417A CN 200880120041 A CN200880120041 A CN 200880120041A CN 101897012 A CN101897012 A CN 101897012A
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plasma
wire
welding
lead
chamber
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CN101897012B (zh
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前田徹
歌野哲弥
寺本章伸
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Tohoku University NUC
Arakawa Co Ltd
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Tohoku University NUC
Arakawa Co Ltd
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Abstract

在焊接装置(10)中，包括：内部保持惰性气体气氛的室(12)；第一等离子枪(20)，安装在室(12)中，将等离子化气体照射置于室(12)内的衬底(41)和半导体芯片(42)，进行焊接点和电极的表面处理；第二等离子枪(30)，安装在室(12)中，将等离子化气体照射位于室(12)内的毛细管(17)前端的初始球(19)或引线(18)，进行初始球(19)或引线(18)的表面处理；焊接处理部(100)，在室(12)内将经表面处理的初始球(19)、引线(18)焊接在经表面处理的焊接点及电极上。由此，有效地进行电极、焊接点及引线双方的表面清洁。

Description

焊接装置及焊接方法
技术领域
本发明涉及焊接装置的结构以及使用该焊接装置的焊接方法。
背景技术
在用金属细线引线连接半导体芯片的电极部的焊接点(pad)和印制电路板的电极之间的引线焊接装置中，当通过超声波或热压接将引线连接到焊接点或电极上时，焊接点或电极的表面状态对于焊接质量很重要。即，若焊接点或电极的金属层表面被污染，附着有水分或异物，则会发生在焊接点或电极与引线之间不能实行良好的电气接合，且机械接合强度也变弱的问题。于是，在进行焊接处理前，大多实行除去焊接点或电极的污染、水分或异物的表面处理。
以往，实行这种除去金属表面污染或异物的表面处理，使用湿清洗，朝着各自接合的金属表面喷射水份除去溶剂、有机物污染除去溶剂后，在惰性气体气氛下干燥、消电。但是，进行这种湿清洗的装置需要供给、排出清洗液，进行废液处理，存在引起装置整体大型化，难以组装在引线焊接装置的问题。
于是，提出向金属表面照射等离子体进行清洗的方法，作为不使用溶剂、在干状态进行金属表面清洗的方法。例如，在专利文献1中，提出将氩气等离子体照射半导体芯片的焊接点表面，清洗金属表面的方法。又，在专利文献1中，为了进行良好的焊接，提出以下方法：通过火花将引线成形为球时，调整火花电压或电流使得晶粒大径化，球软化后推压在半导体芯片的焊接点接合。该方法通过使得球软化，使得推压到焊接点时的球的变形大，因变形，形成球时形成在球表面的氧化膜或附着物的外壳破溃，露出金属的新面，通过将该新面推压在已清洗的焊接点表面，欲进行良好的焊接。
又，在专利文献2中，提出以下方法：将半导体芯片倒装式地安装在引脚框或衬底上时，将氩气等离子体照射引脚框或衬底的表面的电极，进行清洗，同时，将激光照射在半导体芯片电极上形成的柱状凸起(stud bump)的表面，使得柱状凸起的晶粒大径化，软化柱状凸起，将柱状凸起按压在电极上。该方法使得柱状凸起被按压到引脚框或衬底的电极上时的变形大，因该变形破坏柱状凸起表面的氧化膜或附着物形成的外壳，露出金属的新面，通过将该新面推压在已清洗的焊接点表面，欲进行良好的焊接。
又，在专利文献3中，提出以下方法：通过微电弧，使得在毛细管前端延伸出来的引线成形为球，球在熔融状态下焊接在焊接点上，不使用超声波，以少的负荷将引线焊接在焊接点上，以及将氩的微等离子弧照射在电极的金属表面，进行金属表面清洗后，将引线焊接在电极上。
[专利文献1]特开2006-332152号公报
[专利文献2]特开2006-332151号公报
[专利文献3]特开2001-68500号公报
专利文献1或专利文献2中记载的现有技术系软化球或柱状凸起，当将球或柱状凸起推压到电极面上时，破坏表面的氧化膜或附着物的外壳，使得金属的新面能接触电极面，以进行良好焊接的方法，不是除去表面氧化膜或附着物。因此，在专利文献1或专利文献2记载的现有技术中，球或柱状凸起表面的氧化膜或附着物的外壳在焊接时被夹在金属表面和球或柱状凸起之间，有时不能进行良好的接合。
又，在专利文献1至专利文献3记载的现有技术中，半导体芯片的焊接点或引脚框或衬底的电极表面，尽管能通过照射等离子体进行清洗，但不清洗焊接在焊接点或电极上的球或引线，有时因球或引线表面附着物不能良好的接合。
发明内容
本发明的目的在于，有效地进行焊接对象以及初始球、引线双方的表面处理。
本发明的焊接装置系通过插入穿通焊接工具的引线，对焊接对象进行焊接处理，其特征在于，包括：
室，使得内部保持惰性气体气氛；
第一等离子枪，安装在室中，将气体等离子体照射置于室内的焊接对象，进行焊接对象的表面处理；
第二等离子枪，安装在室中，将气体等离子体照射位于室内的焊接工具前端的初始球和引线的某一方或双方，进行初始球和引线的某一方或双方的表面处理；
焊接处理部，在室内将经表面处理的初始球和引线的某一方或双方焊接在经表面处理的焊接对象上。
在根据本发明的焊接装置中，较好的是，所述室安装在基座上，所述焊接处理部包括使得焊接对象朝焊接对象的沿焊接面方向移动的焊接台，以及使得焊接工具朝与焊接对象接离方向移动的焊接头。
在根据本发明的焊接装置中，较好的是，气体等离子体是使得稀有气体和氢的混合气体等离子化的气体。
在根据本发明的焊接装置中，较好的是，设有将氢混入等离子化稀有气体的混入喷嘴。
根据本发明的焊接方法系通过插入穿通焊接工具的引线，对焊接对象进行焊接处理，其特征在于，包括：
第一表面处理工序，通过安装在内部保持惰性气体气氛的室中的第一等离子枪，将气体等离子体照射置于室内的焊接对象，进行焊接对象的表面处理；
第二表面处理工序，通过安装在室中的第二等离子枪，将气体等离子体照射位于室内的焊接工具前端的初始球和引线的某一方或双方，进行初始球和引线的某一方或双方的表面处理；
焊接工序，在室内将经表面处理的初始球和引线的某一方或双方焊接在经表面处理的焊接对象上。
又，在根据本发明的焊接方法中，较好的是，使得稀有气体和氢的混合气体等离子化。
在根据本发明的焊接方法中，较好的是，第一表面处理工序和第二表面处理工序分别将氢混入等离子化稀有气体中，照射焊接对象，以及初始球和引线的某一方或双方。
下面说明本发明效果。
本发明具有能有效地进行焊接对象及初始球、引线双方的表面处理的效果。
附图说明
图1是表示本发明实施形态的焊接装置结构的立体图。
图2是表示本发明实施形态的焊接装置结构的截面图。
图3是在本发明实施形态的焊接装置中，表示第一等离子枪的结构及等离子化气体照射的立体图。
图4是在本发明实施形态的焊接装置中，表示用第二等离子枪将等离子化气体照射在初始球上状态的立体图。
图5是在本发明实施形态的焊接装置中，表示第二表面处理工序的说明图。
图6是在本发明实施形态的焊接装置中，表示向焊接点的焊接工序的说明图。
图7是在本发明实施形态的焊接装置中，表示输出引线的说明图。
图8是在本发明实施形态的焊接装置中，表示引线环的说明图。
图9是在本发明实施形态的焊接装置中，表示向电极的焊接工序的说明图。
图10是在本发明实施形态的焊接装置中，表示设有氢混入喷嘴的等离子枪结构以及等离子化气体照射的立体图。
符号说明如下：
10-焊接装置、11-基座、12-室、12a，12b-上面板、13-焊接台、14-运送通道、15-焊接头、16-焊接臂、17-毛细管、18-引线、19-初始球、19a-压焊球、20-第一等离子枪、21，31-前端部、22，32-外部电极、23，33-气体导入管、24，34-气体配管、25，35-电线、26，36-喷流、27-清洗位置、28，38-内部电极、30-第二等离子枪、41-衬底、42-半导体芯片、43-焊接点、44-电极、51-入口槽、52-出口槽、53-供给库(stack)、54-制品库、55-毛细管用孔、60-等离子用气体供给部、61-混合箱、62-氩气瓶、63-氢气瓶、64，65-连接配管、66-等离子用气体供给管、67，68-氢混入喷嘴、70-高频电力供给部、71-匹配电路、72-高频电源、73-高频电力连接线、74-高频电力输出线、80-控制部、100-焊接处理部。
具体实施方式
下面参照附图说明本发明较佳实施形态。如图1所示，本实施形态的焊接装置10包括基座11，安装在基座11上的焊接台13，运送通道14，作为焊接工具的毛细管17，安装着毛细管17的焊接臂16，固定在基座11上用于驱动焊接臂16的焊接头15，安装在基座11上围住焊接台13及运送通道14的室12，安装在室12的第一等离子枪20，两个第二等离子枪30，向各等离子枪20、30供给等离子用气体的等离子用气体供给部60，向各等离子枪20、30供给等离子发生用的高频电力的高频电力供给部70，控制部80，供给库53，以及制品库54(53和54参照图2)。运送通道14使得作为焊接对象的、半导体芯片42安装在表面的衬底41朝着图示X方向运送，控制部80与焊接头15、等离子用气体供给部60、高频电力供给部70、运送通道14、焊接台13连接，作为一体控制各要素，供给库53将表面安装有半导体芯片42的衬底41供给运送通道14，制品库54用于存放在焊接台13结束焊接处理的衬底41。
焊接台13在进行焊接的焊接面的表面设有固定衬底41的真空吸附孔，通过没有图示的真空装置使得真空吸附孔成为真空，将衬底41吸附固定在焊接面上。又，如图1所示，焊接台13构成为能通过X、Y方向驱动机构沿衬底41的焊接面朝图示X、Y方向移动。运送通道14在运送方向两侧支承衬底41，从图2所示供给库53向着制品库54沿图示X方向运送衬底41，同时，如图1所示，在位于运送通道14中途的清洗位置27使得衬底41停止，再使得衬底41从清洗位置27向焊接台13移动，或从焊接台13将衬底41运送到制品库54。
焊接头15在内部驱动焊接臂16摆动，设有Z方向电机，驱动焊接臂16前端沿Z方向移动，所述Z方向是相对吸附固定在焊接台13上的衬底41相接/脱离方向(以下简记为“接离方向”)。在焊接臂16的朝着焊接台13的前端，安装作为焊接工具的毛细管17。毛细管17的前端侧为朝着前端变细的锥形状，基端侧为圆筒形状，圆筒部分安装在焊接臂16中。毛细管17在其中心设有通孔，作为金制细线的引线18插入穿通所述通孔。在从毛细管17前端伸出的引线18前端通过火花等形成初始球19。焊接头15、焊接臂16、毛细管17、以及焊接台13构成焊接处理部100，用引线18连接衬底41和安装在衬底41的半导体芯片42之间。
如图1及图2所示，室12安装在基座11上，呈围住焊接台13及运送通道14的具有阶梯差的箱型形状，设有入口槽51及出口槽52，所述入口槽51设在从供给库53向室12的运送通道14供给的衬底41进入侧的侧板上，所述出口槽52设在将完成焊接处理的制品从室12的运送通道14排出到制品库54侧的侧板上。又，室12的围住焊接台13侧的上面板12a设在焊接台13和焊接臂16之间，在上面板12a设有毛细管用孔55，安装在焊接臂16的毛细管17穿过该毛细管用孔55。沿着运送通道14的运送方向，清洗位置27位于焊接台13的上游侧，覆盖所述清洗位置27的上面板12b配置为与上面板12a具有阶梯差。
如图1及图2所示，在室12的清洗位置27侧的上面板12b，安装第一等离子枪20，该第一等离子枪20相对停止在清洗位置27的衬底41大致垂直，将等离子化气体照射在停止在清洗位置27的衬底41上。第一等离子枪20位于室12内，设有具有喷出等离子化气体的开口的前端部21，供给等离子气体发生用的高频电力的外部电极22，导入等离子用气体的气体导入管23，气体导入管23穿过上面板12b向室12外部突出，气体配管24与气体导入管23连接，通过所述气体配管24与等离子用气体供给部60连接，外部电极22通过穿过上面板12b的电线25与高频电力供给部70连接。
如图1及图2所示，在室12的焊接台13侧的上面板12a，设有两个第二等离子枪30，配置为在毛细管用孔55两侧对向。各个第二等离子枪30在室12内部与焊接台13的焊接面大致平行，喷出等离子化气体的前端部31安装为朝着在毛细管17前端成形的初始球19。又，第二等离子枪30设有供给等离子气体发生用的高频电力的外部电极32，以及导入等离子用气体的气体导入管33。气体导入管33在室内部弯曲穿过上面板12a向室12外部突出，气体配管34与气体导入管33连接，通过所述气体配管34与等离子用气体供给部60连接，外部电极32通过穿过上面板12a的电线35与高频电力供给部70连接。
没有图示的惰性气体供给装置与室12连接，向室12内供给惰性气体。可以使用氮气等作为惰性气体。供给到室12内的惰性气体从入口槽51、出口槽52或毛细管用孔55流出，防止外部气体从上述开口部进入室12内，使得室12内部保持惰性气体气氛。又，也可以构成为在入口槽51、出口槽52安装盖，抑制惰性气体流出。
如图3所示，第一等离子枪20设有前端部21，圆筒形状的外部电极22，圆筒形状的气体导入管23，内部电极28。所述前端部21为由绝缘体构成的圆筒形状，从前端开口喷出等离子化气体，所述外部电极22设在前端部21外部，所述气体导入管23与前端部21连接，用导电性材料构成，所述内部电极28设在气体导入管23内部，一端与气体导入管23内面接触，另一端延伸在前端部21内部。气体导入管23电气接地。等离子用气体供给部60具有供给成为等离子体源的气体的功能，具体地说，设有混合箱61，氩气瓶62，氢气瓶63，连接配管64、65，供给等离子用气体的等离子用气体供给管66。所述混合箱61用于将还原处理用气体混合到稀有气体，所述氩气瓶62充填作为稀有气体源的氩气，所述氢气瓶63充填还原处理用的氢气，所述连接配管64连接氩气瓶62和混合箱61，所述连接配管65连接氢气瓶63和混合箱61。等离子用气体供给管66通过气体配管24与气体导入管23连接。在本实施形态中，使用氩气作为稀有气体，但是也可以使用氮气等。
如图3所示，高频电力供给部70向第一等离子枪20的外部电极22供给用于维持发生等离子体的高频电力，设有匹配电路71以及高频电源72。匹配电路71是用于抑制向外部电极22供给高频电力时的电力反射的电路，可以使用例如LCR谐振电路。高频电源72可以使用例如100MHz～500MHz等频率的电源。供给电力的大小考虑从等离子用气体供给部60供给的等离子用气体的种类、流量、等离子体稳定性决定。高频电源72的控制由控制部80实行。高频电源72和匹配电路71由高频电力连接线73连接，高频电力从匹配电路71通过高频电力输出线74向电线25输出。
如图3所示，第一等离子枪20通过将高频电力通电到内部电极28、接地的气体导入管23和外部电极22之间，使得从气体导入管23导入的气体等离子化，将等离子化气体从前端部21开口向着衬底41以及安装在衬底41上的半导体芯片42照射。图3中的网状花纹区域表示等离子化气体喷流26。如图3所示，从前端部21喷出的等离子化气体的喷流26朝着衬底41和半导体芯片42扩展地喷出，覆盖形成在半导体芯片42表面的焊接点43，以及形成在衬底41上的电极44的焊接区域。因此，若使得衬底41停止在清洗位置27，通过第一等离子枪20照射等离子化气体，则能同时对半导体芯片42的各焊接点43和衬底41的各电极44进行表面处理。在本实施形态中，以一个第一等离子枪20覆盖各焊接点43及电极44，但是，也可以设置多个第一等离子枪20，或者也可以在从第一等离子枪20将等离子化气体向着衬底41、半导体芯片42照射状态下，使得衬底41移动，进行各焊接点43、电极44的表面处理。
如图4所示，第二等离子枪30与第一等离子枪20相同，设有前端部31，圆筒形状的外部电极32，圆筒形状的气体导入管33，内部电极38。所述前端部31为由绝缘体构成的圆筒形状，从前端开口喷出等离子化气体喷流36，所述外部电极32设在前端部31外部，所述气体导入管33与前端部31连接，用导电性材料构成，所述内部电极38设在气体导入管33内部，一端与气体导入管33内面接触，另一端延伸到前端部31内部。气体导入管33与图3所示等离子用气体供给部60连接，外部电极32与高频电力供给部70连接。又，气体导入管33接地。两个第二等离子枪30通过将高频电力通电到内部电极38、接地的气体导入管33和外部电极32之间，使得导入到气体导入管33的等离子用气体等离子化，将等离子化气体从前端部31开口向着伸出到毛细管17前端的初始球19照射，
说明通过上述构成的焊接装置10进行衬底41表面的电极44、半导体芯片42表面的焊接点43、初始球19、引线18的表面处理工序以及焊接工序。
如图2所示，积存在供给库53的衬底41从入口槽51供给运送通道14。半导体芯片42在前工序安装在衬底41上。控制部80控制通过运送通道14将衬底41导入保持惰性气体气氛的室12内部，使其移动到安装第一等离子枪20的清洗位置27。若使得衬底41移动到清洗位置27，则控制部80实行第一表面处理工序。控制部80将等离子用气体从等离子用气体供给部60供给第一等离子枪20，同时，从高频电力供给部70向外部电极22供给高频电力，在第一等离子枪20内部使得等离子用气体等离子化，如图3所示那样，使得等离子化气体向着衬底41的电极44表面以及半导体芯片42的焊接点43表面喷出，进行焊接点43和电极44的表面处理。此时，可以常时使得等离子化气体喷出，也可以分别向衬底41或半导体芯片喷出。等离子化气体在室12内部的惰性气体气氛中照射在焊接点43和电极44的表面，除去焊接点43和电极44表面污染、水份或异物，成为清洁表面。又，在等离子用气体中混合作为还原气体的氢，因此，也同时除去焊接点43和电极44的表面氧化膜。若以所定时间照射来自第一等离子枪20的等离子化气体，控制部80结束第一表面处理工序。
若控制部80结束第一表面处理工序，则通过运送通道14将衬底41运送到焊接台13上，使得焊接台13的真空吸附孔为真空，将衬底41吸附固定在焊接台13的焊接面上。控制部80通过没有图示的火花装置使得从毛细管17前端伸出的引线18成形为初始球19。接着，驱动焊接头15内部的Z方向电机，形成的初始球19的位置在保持惰性气体气氛的室12内部，调整到接触从第二等离子枪30喷出的等离子化气体的位置。
如图5所示，若初始球19的高度调整结束，则控制部80将等离子用气体从等离子用气体供给部60供给两个第二等离子枪30，同时，从高频电力供给部70向外部电极32供给高频电力，在第二等离子枪30内部使得等离子用气体等离子化，使得等离子化气体向着初始球19的侧面喷出，进行初始球19表面处理。等离子化气体在室12内部的惰性气体气氛中从与初始球19表面对向的两方向照射，除去初始球19表面污染、水份或异物，成为清洁表面。又，在等离子用气体中混合作为还原气体的氢，因此，也同时除去通过火花成形初始球19时在表面形成的氧化膜。若以所定时间照射来自第二等离子枪30的等离子化气体，控制部80结束第二表面处理工序。
第一表面处理工序和第二表面处理工序都在保持为惰性气体气氛的室12内部进行，因此，通过照射等离子化气体得到表面处理的焊接点43、电极44的表面、初始球19表面保持清洁状态。又，通过照射等离子化气体，金属表面活性化，成为易接合状态。
如图6所示，若结束第二表面处理工序，则控制部80开始焊接工序。衬底41表面安装半导体芯片42，焊接台13将衬底41吸附在焊接面上，焊接台13根据控制部80指令沿X、Y方向移动，使得毛细管17中心来到欲进行一次焊接的焊接点43上。接着，若焊接点43位置成为毛细管17中心位置，控制部80停止焊接台13沿X、Y方向的移动，驱动焊接头15的Z方向电机，使得焊接臂16往下移动，使得毛细管17朝着焊接台13下降。接着，将毛细管17前端的初始球19与焊接点43压接。初始球19若与焊接点43压接，则初始球19变形成为压焊球19a，进行引线18和焊接点43的接合。该接合在保持惰性气体气氛的室12中进行，在焊接点43和初始球19的各表面清洁、具有活性的状态下进行，因此，即使不使用超声波励振或不加热焊接点43也能进行良好的焊接。该焊接工序中，照射来自第二等离子枪30的等离子化气体可以继续进行，也可以在焊接工序中停止。
如图7所示，若结束向焊接点43的初始球19的焊接，则控制部80驱动焊接头15的Z方向电机，一边从毛细管17前端输出引线18，一边使得上升到从第二等离子枪30喷出的等离子化气体碰到毛细管前端的引线18的高度。接着，控制部80进行从第二等离子枪30的等离子化气体的照射，进行输出的引线18的表面处理。
如图8所示，毛细管17一上升到所定高度，一边从毛细管17前端输出引线18，一边使得焊接台13沿X、Y方向移动，使得引线18成环，使得毛细管17中心来到欲进行二次焊接的电极44上。成环时，输出到毛细管前端的引线18成为通过从第二等离子枪30喷出的等离子化气体中的状态，因此，输出的引线18的表面被连续清洗，得到表面处理。
如图9所示，若毛细管17中心来到欲进行二次焊接的电极44上，则控制部80停止焊接台13移动，驱动焊接头15的Z方向电机，使得焊接臂16往下移动，使得毛细管17朝着焊接台13下降，将毛细管17前端输出的引线18压接在电极44上，使得引线18和电极44接合。该接合在保持惰性气体气氛的室12中进行，在电极44和引线18双方表面清洁、有活性状态下进行，因此，即使不使用超声波励振或不加热焊接点43也能进行良好的焊接。
如上所述，本实施形态的焊接装置10在惰性气体气氛的室12中通过第一等离子枪20进行焊接点43和电极44的表面处理后，在室12中移动到焊接台13，在室12中进行初始球19的表面处理后，在室12中，将表面得到处理的初始球19压接在表面得到处理的焊接点43上接合，因此，能在清洁、有活性状态下焊接所述焊接点43、初始球19双方表面，具有能进行良好接合的效果。又，成为清洁、有活性表面之间的接合，因此，即使不进行超声波励振或加热也能进行良好的接合，具有能抑制因超声波励振或加热使得半导体芯片42受到损伤的效果。
本实施形态的焊接装置10一边通过第二等离子枪30表面处理引线18，一边从接合初始球19的焊接点43成环在进行二次焊接的电极44上，将经表面处理的引线18压接在经表面处理的电极44上接合，因此，引线18向电极44接合时，将引线18的经表面处理的面接合在电极44的经表面处理的面上，因此，电极44和引线18双方表面能在清洁、有活性状态下进行焊接，具有能进行良好接合的效果。又，成为清洁、有活性表面之间的接合，因此，即使不进行超声波励振或加热也能进行良好的接合，具有能简便地进行焊接的效果。
又，在本实施形态的焊接装置10中，在等离子用气体中混合作为还原气体的氢气，因此，通过照射等离子化气体，具有不仅能除去表面污染、水份或异物，而且也能同时除去表面氧化膜的效果。
如上所述，本实施形态的焊接装置10能有效地进行焊接对象及初始球19、引线18双方地表面处理，具有能进行良好接合的效果。
本实施形态的第一等离子枪20和第二等离子枪30将在混合箱61中混合稀有气体和氢气的混合气体等离子化，照射在对象上，但是，也可以将氢气混入等离子化的稀有气体中。如图10所示，可以将稀有气体导入气体导入管23、33，通过将高频电力通电到内部电极28、38、气体导入管23、33和外部电极22、32之间，使得从气体导入管23、33导入的稀有气体等离子化，从设在前端部21、31的氢混入喷嘴67将氢气混入到等离子化的稀有气体中，从前端部21、31的各开口喷出使得氢气混入等离子化稀有气体的气体。又，如图10所示，也可以设为氢混入喷嘴68，其延伸到从各开口喷出的等离子化的稀有气体各喷流26、36，将氢气混入到等离子化的稀有气体中。
在上述说明的本实施形态中，使用氩等稀有气体作为等离子源的气体，但是，也可以使用例如氮气作为等离子源的气体，代替稀有气体。又，说明使得氢气混合到稀有气体后等离子化，或从氢混入喷嘴67、68使得氢气混入到等离子化的稀有气体中，但是，也可以混合或混入例如氧气，代替氢气。混入氧气场合，可以从与图10说明的氢混入喷嘴67、68相同形状的氧混入喷嘴将氧气混入等离子化气体中。通过这样混入氧，能提高进行表面处理的衬底41表面的电极44、半导体芯片42表面的焊接点43、初始球19、引线18表面的有机物污染的除去效果。
又，在本实施形态中，说明将引线18焊接在衬底41的电极44上场合，但是，本发明也能适用于将引线18焊接在引脚框的引脚上场合。
在本实施形态中，说明输出引线18，成环时通过第二等离子枪30进行引线18表面处理，但是，只要引线18表面为清洁状态，也可以省略输出引线18、成环时引线18的表面处理。这种场合，引线18输出高度可以输出到比碰到第二等离子枪30的等离子化气体高度低的高度，能降低引线环的高度。

Claims (7)

1.一种焊接装置，通过插入穿通焊接工具的引线，对焊接对象进行焊接处理，其特征在于，包括：
室，使得内部保持惰性气体气氛；
第一等离子枪，安装在室中，将气体等离子体照射置于室内的焊接对象，进行焊接对象的表面处理；
第二等离子枪，安装在室中，将气体等离子体照射位于室内的焊接工具前端的初始球和引线的某一方或双方，进行初始球和引线的某一方或双方的表面处理；
焊接处理部，在室内将经表面处理的初始球和引线的某一方或双方焊接在经表面处理的焊接对象上。
2.根据权利要求1中所述的焊接装置，其特征在于：
所述室安装在基座上；
所述焊接处理部包括使得焊接对象朝焊接对象的沿焊接面方向移动的焊接台，以及使得焊接工具朝与焊接对象接离方向移动的焊接头。
3.根据权利要求1中所述的焊接装置，其特征在于：
气体等离子体是使得稀有气体和氢的混合气体等离子化的气体。
4.根据权利要求1中所述的焊接装置，其特征在于：
设有将氢混入等离子化稀有气体的混入喷嘴。
5.一种焊接方法，通过插入穿通焊接工具的引线，对焊接对象进行焊接处理，其特征在于，包括：
第一表面处理工序，通过安装在内部保持惰性气体气氛的室中的第一等离子枪，将气体等离子体照射置于室内的焊接对象，进行焊接对象的表面处理；
第二表面处理工序，通过安装在室中的第二等离子枪，将气体等离子体照射位于室内的焊接工具前端的初始球和引线的某一方或双方，进行初始球和引线的某一方或双方的表面处理；
焊接工序，在室内将经表面处理的初始球和引线的某一方或双方焊接在经表面处理的焊接对象上。
6.根据权利要求5中所述的焊接方法，其特征在于：
使得稀有气体和氢的混合气体等离子化。
7.根据权利要求5中所述的焊接方法，其特征在于：
第一表面处理工序和第二表面处理工序分别将氢混入等离子化稀有气体中，照射焊接对象，以及初始球和引线的某一方或双方。
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CN103460363B (zh) * 2011-04-05 2016-01-20 株式会社新川 焊接装置以及焊接工具的清洗方法
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CN112692422B (zh) * 2020-12-15 2022-01-21 中山大学 等离子弧增强超声金属复合板制备装置及方法

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JP2009141215A (ja) 2009-06-25
TW200926321A (en) 2009-06-16
US7975901B2 (en) 2011-07-12
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WO2009072348A1 (ja) 2009-06-11
KR20100067135A (ko) 2010-06-18

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