CN101889349A - 包括金属覆盖穿通以及改进的钝化的光生伏打电池 - Google Patents

包括金属覆盖穿通以及改进的钝化的光生伏打电池 Download PDF

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Publication number
CN101889349A
CN101889349A CN2008801192393A CN200880119239A CN101889349A CN 101889349 A CN101889349 A CN 101889349A CN 2008801192393 A CN2008801192393 A CN 2008801192393A CN 200880119239 A CN200880119239 A CN 200880119239A CN 101889349 A CN101889349 A CN 101889349A
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China
Prior art keywords
layer
semiconductor layer
oxide
dielectric
dielectric layer
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Pending
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CN2008801192393A
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English (en)
Chinese (zh)
Inventor
F·德罗斯
C·阿尔贝
J·什勒夫奇克
G·博卡恩
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Imec Corp
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Photovoltech
Imec Corp
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=39683568&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CN101889349(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Photovoltech, Imec Corp filed Critical Photovoltech
Publication of CN101889349A publication Critical patent/CN101889349A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H10F77/223—Arrangements for electrodes of back-contact photovoltaic cells for metallisation wrap-through [MWT] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
CN2008801192393A 2007-12-03 2008-12-02 包括金属覆盖穿通以及改进的钝化的光生伏打电池 Pending CN101889349A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
EP07122152A EP2068369A1 (en) 2007-12-03 2007-12-03 Photovoltaic cells having metal wrap through and improved passivation
EP07122152.7 2007-12-03
US99229807P 2007-12-04 2007-12-04
US60/992,298 2007-12-04
PCT/EP2008/066662 WO2009071561A2 (en) 2007-12-03 2008-12-02 Photovoltaic cells having metal wrap through and improved passivation

Publications (1)

Publication Number Publication Date
CN101889349A true CN101889349A (zh) 2010-11-17

Family

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CN2008801192393A Pending CN101889349A (zh) 2007-12-03 2008-12-02 包括金属覆盖穿通以及改进的钝化的光生伏打电池

Country Status (7)

Country Link
US (1) US9246044B2 (cg-RX-API-DMAC10.html)
EP (2) EP2068369A1 (cg-RX-API-DMAC10.html)
JP (1) JP5416711B2 (cg-RX-API-DMAC10.html)
CN (1) CN101889349A (cg-RX-API-DMAC10.html)
AT (1) ATE511215T1 (cg-RX-API-DMAC10.html)
ES (1) ES2365679T5 (cg-RX-API-DMAC10.html)
WO (1) WO2009071561A2 (cg-RX-API-DMAC10.html)

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CN102386249A (zh) * 2011-10-31 2012-03-21 北京中联科伟达技术股份有限公司 一种下一代结构高效率晶体硅电池及制作方法
CN102800742A (zh) * 2011-05-27 2012-11-28 苏州阿特斯阳光电力科技有限公司 背接触晶体硅太阳能电池片制造方法
WO2012162904A1 (zh) * 2011-05-27 2012-12-06 苏州阿特斯阳光电力科技有限公司 光电转换装置
WO2012162906A1 (zh) * 2011-05-27 2012-12-06 苏州阿特斯阳光电力科技有限公司 光电转换装置
CN103430319A (zh) * 2011-03-31 2013-12-04 京瓷株式会社 太阳能电池元件及太阳能电池模块
CN103460402A (zh) * 2011-04-04 2013-12-18 三菱电机株式会社 太阳能电池及其制造方法、太阳能电池模块
CN103503080A (zh) * 2011-03-03 2014-01-08 E.I.内穆尔杜邦公司 用于形成钝化发射极的银背面电极和背面接触硅太阳能电池的方法
CN103904142A (zh) * 2014-03-25 2014-07-02 中国科学院半导体研究所 具备背电极局域随机点接触太阳电池及制备方法
CN104009102A (zh) * 2014-06-16 2014-08-27 中电投西安太阳能电力有限公司 背钝化层结构、背钝化p型太阳能电池及其制备方法
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CN109473493A (zh) * 2018-12-20 2019-03-15 江苏日托光伏科技股份有限公司 一种mwt异质结硅太阳电池及其制备方法
CN109545906A (zh) * 2018-12-24 2019-03-29 江苏日托光伏科技股份有限公司 一种mwt+perc太阳能电池的生产方法
CN111742417A (zh) * 2018-02-07 2020-10-02 贺利氏德国有限两合公司 改善硅太阳能电池的接触格与发射极层之间的欧姆接触特性的方法
CN112447882A (zh) * 2019-08-29 2021-03-05 阿聚尔斯佩西太阳能有限责任公司 用于半导体晶片的通孔的钝化方法
CN112447881A (zh) * 2019-08-29 2021-03-05 阿聚尔斯佩西太阳能有限责任公司 用于半导体晶片的贯通开口的保护方法
CN115084283A (zh) * 2021-03-02 2022-09-20 阿聚尔斯佩西太阳能有限责任公司 太阳能电池接触装置
CN115398652A (zh) * 2020-03-30 2022-11-25 株式会社钟化 电池单元集合体、电池单元集合体的制造方法、太阳电池单元、及太阳电池单元的制造方法
CN115803893A (zh) * 2020-07-22 2023-03-14 维耶尔公司 微光电装置
CN121310686A (zh) * 2025-08-29 2026-01-09 横店集团东磁股份有限公司 复合钝化层及其制备方法和应用

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CN113327997B (zh) * 2021-07-15 2025-10-03 浙江爱旭太阳能科技有限公司 一种背接触太阳能电池串及制备方法、组件及系统
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