CN101866927A - 共享字线的无触点纳米晶分栅式闪存 - Google Patents
共享字线的无触点纳米晶分栅式闪存 Download PDFInfo
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- CN101866927A CN101866927A CN201010172657A CN201010172657A CN101866927A CN 101866927 A CN101866927 A CN 101866927A CN 201010172657 A CN201010172657 A CN 201010172657A CN 201010172657 A CN201010172657 A CN 201010172657A CN 101866927 A CN101866927 A CN 101866927A
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CN201010172657A CN101866927A (zh) | 2010-05-12 | 2010-05-12 | 共享字线的无触点纳米晶分栅式闪存 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US5679591A (en) * | 1996-12-16 | 1997-10-21 | Taiwan Semiconductor Manufacturing Company, Ltd | Method of making raised-bitline contactless trenched flash memory cell |
CN1799131A (zh) * | 2003-06-20 | 2006-07-05 | 国际商业机器公司 | 具有包括半导体纳米晶体的浮栅的非易失存储器件 |
CN101694844A (zh) * | 2009-10-13 | 2010-04-14 | 上海宏力半导体制造有限公司 | 共享字线的基于氮化硅浮栅的分栅式闪存 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US5679591A (en) * | 1996-12-16 | 1997-10-21 | Taiwan Semiconductor Manufacturing Company, Ltd | Method of making raised-bitline contactless trenched flash memory cell |
CN1799131A (zh) * | 2003-06-20 | 2006-07-05 | 国际商业机器公司 | 具有包括半导体纳米晶体的浮栅的非易失存储器件 |
CN101694844A (zh) * | 2009-10-13 | 2010-04-14 | 上海宏力半导体制造有限公司 | 共享字线的基于氮化硅浮栅的分栅式闪存 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140514 |
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Effective date of registration: 20140514 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Zhangjiang hi tech Park No. 818 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
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Application publication date: 20101020 |