CN101854149A - Preamplifier design method and on-chip preamplifier design method - Google Patents
Preamplifier design method and on-chip preamplifier design method Download PDFInfo
- Publication number
- CN101854149A CN101854149A CN 201010189770 CN201010189770A CN101854149A CN 101854149 A CN101854149 A CN 101854149A CN 201010189770 CN201010189770 CN 201010189770 CN 201010189770 A CN201010189770 A CN 201010189770A CN 101854149 A CN101854149 A CN 101854149A
- Authority
- CN
- China
- Prior art keywords
- drain terminal
- grid
- circuit
- source
- vdd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Amplifiers (AREA)
Abstract
The invention discloses a preamplifier design method which improves a regulated cascode (RGC) structure and adopts an active negative feedback, resistance negative feedback and multilevel common source concatenation method to obtain performances of high gain, wide broadband and low noise so as to serve as a preamplifier in a system. The invention also discloses an on-chip preamplifier design method adopting the above method, which is characterized by adopting an improved RGC structure, an MOSFET process and an MESFET process; and an L1, an L2, an L3 and an L4 adopt on-chip spiral inductors. The circuit has tiny input resistance; the broadband is expanded; and simultaneously, the structure has extremely stable offset and has high gain performance, and the CMOS process proves that transimpedance grain reaches 52dB, and the broadband of 3dB is larger than 40GHz.
Description
Technical field
The invention belongs to the Analogical Electronics design field, specifically is a kind of low-noise preamplifier circuit that is applicable in the receiving system, the small-signal that receives is carried out high-gain amplify, and circuit has high operating frequency simultaneously.
Background technology
The effect of preamplifier is that the current pulse signal that receiving system receives converts certain voltage pulse signal to, because the current signal that receives is very faint, if adopt general amplifier to amplify, amplifier itself can be introduced big noise, back one-level amplifier amplifies simultaneously to the signal of previous stage amplifier output and the noise of introducing, signal to noise ratio can not improve, and the sensitivity of receiver is determined by preamplifier.Therefore the design object of preamplifier is exactly the performance that will obtain low noise, high sensitivity and high-gain; In systems such as optical fiber communication, along with the lifting of system's speed, preamplifier also will obtain wide as far as possible bandwidth under existing processes on the other hand.
Summary of the invention
Purpose of the present invention just provides a kind of amplifier that can have high-gain, wide bandwidth and low-noise performance simultaneously, and this amplifier can be used as the preamplifier in the system.
A kind of method for designing of wide band high-gain preamplifier circuit is at first improved adjustable type cascade (RGC) structure and is obtained high-gain and wide bandwidth.
M1, M2 and M3 have constituted modified model RGC structure, and this modified model RGC structure than the difference of traditional RGC structure is: increased one-level M1 grid amplification altogether in feedback loop, reduced the resistance of preamplifier input node, further expanded bandwidth.By the M1 pipe grid current potential of M2 pipe is raised simultaneously, the direct current potential energy of M2 and M3 pipe is regulated easily, be operated in the saturation region better, the grid level of M1 pipe is biased in supply voltage VDD, can not need to provide the external reference current potential.The method of attachment of this modified model RGC structure devices is:
The grid end of M1 connects supply voltage VDD, and the drain terminal of M1 connects the grid end of resistance R 1 and M2, and the other end of R1 is connected to supply voltage VDD, and the source end of M1 is connected to input signal IN;
The source end of M2 is connected to ground potential GND, and the drain terminal of M2 connects the grid end of resistance R 2 and M3, and the other end of R2 is connected to supply voltage VDD;
The source end of M3 is connected to the drain terminal of M4, and the drain terminal of M3 is connected VDD through resistance R 3 with L1 respectively, with three grades of common-source stage amplifiers that are connected back M5, M7 and M9 formation;
The grid termination external control voltage Vb of M4, the source end of M4 is connected to ground potential GND, and the drain terminal of M4 connects input signal IN.
The operation principle of this modified model RGC structure is:
Traditional RGC structure chart as shown in Figure 1, M3 pipe is grid level amplifier altogether, and final output signal, the M2 pipe reduces to import the resistance of node as feedback, thereby expands bandwidth.The M4 pipe provides bias current for M3 is total to the grid level.According to small-signal equivalent circuit, the input node-resistance can be expressed as:
1+g in the formula
M2R
2It is the gain of the common-source stage amplifying circuit of R2 and M2 formation.
Adopt the RGC structure that the input resistance of preamplifier has been reduced
Doubly, utilize the RGC structure can suppress to import of the influence of node place photodetector parasitic capacitance preferably, thereby this structure has obtained research widely and has used in optical fiber telecommunications system to the preamplifier bandwidth as the mutual resistance preamplifier of input stage.
In embodiment, at first traditional RGC structure of present extensive use is improved, in feedback loop, increased one-level M1 grid amplification altogether, further reduce to import the resistance of node, by the M1 pipe grid current potential of M2 pipe is raised simultaneously, the direct current potential energy of M2 and M3 pipe is regulated easily, be operated in the saturation region better, the grid level of M1 pipe is biased in supply voltage VDD, can not need to provide the external reference current potential.According to small-signal equivalent circuit, the resistance of the input node of this modified model RGC structure can be expressed as:
G in the formula
M1R
1It is the gain of the common grid level amplifying circuit of R1 and M1 formation.Therefore utilize this modified model RGC structure can suppress to import of the influence of node place photodetector parasitic capacitance better, the resistance of importing the node place has been reduced the preamplifier bandwidth
Doubly, expand the bandwidth of preamplifier greatly, solved the difficulty that limited process conditions can not realize big bandwidth, saved the flow cost.
This method also adopts three grades of common-source amplifiers, the staggered active negative feedback of two-stage, one-level resistive degeneration, and methods such as level Four inductance compensation obtain high-gain and wide bandwidth.M5, M7 and M9 have constituted three grades of common-source stage amplifiers respectively, and M6 and M8 have constituted the staggered active negative feedback of two-stage, and R7 is the one-level resistive degeneration, and L1～L4 is the level Four inductance compensation.The method of attachment of device is:
The source end of M5, M7 and M9 is all received ground potential GND, and the drain terminal of M5 connects the grid end of load resistance R4 and M7, R4 and L2 series connection, and the other end of L2 is connected to supply voltage VDD;
The drain terminal of M7 connects the grid end of load resistance R5 and M9, R5 and L3 series connection, and the other end of L3 is connected to supply voltage VDD;
The drain terminal of M9 meets load resistance R6 and output OUT, R6 and L4 series connection, and the other end of L4 is connected to supply voltage VDD;
M6 and M8 have constituted the staggered active negative feedback of two-stage, the drain terminal of the grid termination M7 of M6, and the source of M6 terminates to ground potential GND, the drain terminal of M6 feeds back to the grid end of M5, the drain terminal of the grid termination M9 of M8, the source of M8 terminates to ground potential GND, and the drain terminal of M8 feeds back to the grid end of M7;
R7 is the one-level resistive degeneration, and the R7 two ends connect grid end and the drain terminal of M9 respectively.
The method for designing of wide band high-gain preamplifier circuit on a kind of sheet of pressing preceding method except adopting the foregoing circuit method for designing, adopts MOSFET, MESFET technology to realize.L1, L2, L3 and L4 adopt at chip spiral induction.
The technical program, input stage are the modified model RGC structure that M1, M2, M3 and M4 constitute, and this modified model RGC structure has increased one-level M1 grid amplification altogether than traditional RGC structure, reduce the resistance of output node, further expand bandwidth.M5, M7 and M9 have constituted three grades of common-source stage amplifiers respectively, and M6 and M8 have constituted the staggered active negative feedback of two-stage, and R1 is the one-level resistive degeneration, and L1～L4 is the level Four inductance compensation.
Beneficial effect:
A) the present invention adopts modified model RGC structure as input stage, makes circuit have minimum input resistance, has expanded bandwidth.
B) modified model RGC structure is raised the grid current potential of M2 pipe by the M1 pipe, and the direct current potential energy of M2 and M3 pipe is regulated easily, is operated in the saturation region better.
C) the grid level of M1 pipe is biased in supply voltage VDD, can not need to provide the external reference current potential.
D) problem that exists of common feedback method is, does not connect the phenomenon that middle the output stage of feedback element exists bandwidth to fall down, and the staggered active feedback method of M6 and M8 formation has solved this problem.
E) L1～L4 inductance compensation has been expanded circuit bandwidth.
F) modified model RGC structure and three grades of modes such as common-source stage amplification make amplifier obtain the performance of high-gain simultaneously.
G) this circuit has passed through the CMOS process certification, and transimpedance gain reaches 52dB, and three dB bandwidth is greater than 40GHz, and optimum noise current is
Description of drawings:
Fig. 1 is the circuit diagram of traditional RGC structure.
Fig. 2 is a wide band high-gain preamplifier circuit schematic diagram among the embodiment.
Specific implementation:
Below in conjunction with accompanying drawing 2 and embodiment the technical program is described further.
A kind of method for designing of wide band high-gain preamplifier circuit adopts the mode of modified model adjustable type cascade (RGC) structure and inductance compensation to obtain high-gain and wide bandwidth.
M1, M2, M3 and M4 have constituted modified model RGC structure, and this modified model RGC structure has increased one-level M1 grid amplification altogether than traditional RGC structure, has further expanded bandwidth.The method of attachment of device is:
The grid end of M1 connects supply voltage VDD, and the drain terminal of M1 connects the grid end of resistance R 1 and M2, and the other end of R1 is connected to supply voltage VDD, and the source end of M1 is connected to input signal IN;
The source end of M2 is connected to ground potential GND, and the drain terminal of M2 connects the grid end of resistance R 2 and M3, and the other end of R2 is connected to supply voltage VDD;
The source end of M3 is connected to the drain terminal of M4, and the drain terminal of M3 connects resistance R 3, the grid end of M5 and the drain terminal of M6, R3 and L1 series connection, and the other end of L1 is connected to supply voltage VDD;
M4 provides bias current for the common grid level amplifier of M1 and M3, the grid termination external control voltage Vb of M4, and the source end of M4 is connected to ground potential GND.
This method also adopts three grades of common-source amplifiers, the staggered active negative feedback of two-stage, one-level resistive degeneration, and methods such as level Four inductance compensation obtain high-gain and wide bandwidth.M5, M7 and M9 have constituted three grades of common-source stage amplifiers respectively, and M6 and M8 have constituted the staggered active negative feedback of two-stage, and R7 is the one-level resistive degeneration, and L1～L4 is the level Four inductance compensation.The method of attachment of device is:
The source end of M5, M7 and M9 is all received ground potential GND, and the drain terminal of M5 connects the grid end of load resistance R4 and M7, R4 and L2 series connection, and the other end of L2 is connected to supply voltage VDD;
The drain terminal of M7 connects the grid end of load resistance R5 and M9, R5 and L3 series connection, and the other end of L3 is connected to supply voltage VDD;
The drain terminal of M9 meets load resistance R6 and output OUT, R6 and L4 series connection, and the other end of L4 is connected to supply voltage VDD;
M6 and M8 have constituted the staggered active negative feedback of two-stage, the drain terminal of the grid termination M7 of M6, and the source of M6 terminates to ground potential GND, the drain terminal of M6 feeds back to the grid end of M5, the drain terminal of the grid termination M9 of M8, the source of M8 terminates to ground potential GND, and the drain terminal of M8 feeds back to the grid end of M7;
R7 is the one-level resistive degeneration, and the R7 two ends connect grid end and the drain terminal of M9 respectively.
Press the method for designing of wide band high-gain preamplifier circuit on the sheet of preceding method, be based on the above method, adopt modified model RGC structure, three grades of common-source amplifiers, the staggered active negative feedback of two-stages, one-level resistive degeneration, methods such as level Four inductance compensation obtain high-gain and wide bandwidth.
The technical program, input stage are the modified model RGC structure that M1, M2, M3 and M4 constitute, and this modified model RGC structure has increased one-level M1 grid level amplification altogether than traditional RGC structure, has further expanded bandwidth.Staggered active feedback method has solved the problem that the middle output stage bandwidth that does not connect feedback element that common negative feedback exists falls down.
This amplifier is realized to adopt MOSFET, MESFET technology.
The technical program has high-gain, wide bandwidth, low noise performance, and through the CMOS process certification, transimpedance gain reaches 52dB Ω, and three dB bandwidth is greater than 40GHz, and optimum noise current is
Level Four compensating inductance L1 in chip～L4 sense value is all smaller, and the less chip spiral induction that can be used on of the area that takies realizes that this preamplifier is easy to digital circuit integrated, in System on Chip/SoC (SOC) application promise in clinical practice is arranged.
Claims (6)
1. the method for designing of a preamplifier circuit,
Adopt modified model adjustable type cascade (RGC) structure in input stage; Pass through three grades of common-source stage amplifiers, final output signal OUT then;
It is characterized in that described modified model RGC structure, constitute that their method of attachment is by four N transistor npn npn M1, M2, M3 and M4:
The grid end of M1 connects supply voltage VDD, and the drain terminal of M1 connects the grid end of resistance R 1 and M2, and the other end of R1 is connected to supply voltage VDD, and the source end of M1 is connected to input signal IN;
The source end of M2 is connected to ground potential GND, and the drain terminal of M2 connects the grid end of resistance R 2 and M3, and the other end of R2 is connected to supply voltage VDD;
The source end of M3 is connected to the drain terminal of M4, and the drain terminal of M3 is connected VDD through resistance R 3 with L1 respectively, with three grades of common-source stage amplifiers that are connected back M5, M7 and M9 formation;
The grid termination external control voltage Vb of M4, the source end of M4 is connected to ground potential GND, and the drain terminal of M4 connects input signal IN.
2. method according to claim 1 is characterized in that three grades of common-source amplifier circuit of described employing, and this circuit is made of N transistor npn npn M5, M7 and M9; The source end of M5, M7 and M9 is all received ground potential GND,
The drain terminal of M5 connects VDD and the grid end that is connected M7 through load resistance R4 respectively,
The drain terminal of M7 connects VDD and the grid end that is connected M9 through load resistance R5 respectively,
The drain terminal load resistance R6 of M9 connects VDD;
3. method according to claim 2, it is characterized in that also being provided with the staggered active negative-feedback circuit of two-stage, this circuit is made of N transistor npn npn M6 and M8, the drain terminal of the grid termination M7 of M6, the source of M6 terminates to ground potential GND, and the drain terminal of M6 feeds back to the grid end of M5, the drain terminal of the grid termination M9 of M8, the source of M8 terminates to ground potential GND, and the drain terminal of M8 feeds back to the grid end of M7.
4. method according to claim 3 is characterized in that also being provided with one-level resistive degeneration circuit, and this circuit is made of resistance R 7, and the R7 two ends connect grid end and the drain terminal of M9 respectively.
5. according to claim 2 or 3 or 4 described methods, it is characterized in that also being provided with the level Four inductively compensated circuit, this circuit is made of inductance L 1, L2, L3 and L4;
Described L1 is connected between R3 and the VDD; Described L2 is connected between R4 and the VDD; Described L3 is connected between R5 and the VDD; Described L4 is connected between R6 and the VDD.
6. the method for designing by preamplifier circuit on the sheet that adopts the arbitrary described method of claim 1～5 is characterized in that adopting MOSFET, MESFET technology to realize; Described L1, L2, L3 and L4 adopt at chip spiral induction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101897707A CN101854149B (en) | 2010-06-02 | 2010-06-02 | Preamplifier design method and on-chip preamplifier design method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101897707A CN101854149B (en) | 2010-06-02 | 2010-06-02 | Preamplifier design method and on-chip preamplifier design method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101854149A true CN101854149A (en) | 2010-10-06 |
| CN101854149B CN101854149B (en) | 2012-06-27 |
Family
ID=42805450
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010101897707A Expired - Fee Related CN101854149B (en) | 2010-06-02 | 2010-06-02 | Preamplifier design method and on-chip preamplifier design method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101854149B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102820857A (en) * | 2012-06-25 | 2012-12-12 | 东南大学 | Transimpedance amplifier with broad band and high gain, design method and amplifier chip |
| CN103929139A (en) * | 2014-04-22 | 2014-07-16 | 西安电子科技大学 | Transimpedance pre-amplifier of photo-receiver with high-precision automatic gain control |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1835390A (en) * | 2005-02-18 | 2006-09-20 | 财团法人成大研究发展基金会 | Low noise amplifier |
| JP2008103889A (en) * | 2006-10-18 | 2008-05-01 | Niigata Seimitsu Kk | Low-noise amplifier |
| CN201167298Y (en) * | 2008-02-29 | 2008-12-17 | 梁庆九 | Ultra low noise preamplifier |
| US20090102552A1 (en) * | 2007-10-18 | 2009-04-23 | Renesas Technology Corp. | Semiconductor integrated circuit with variable gain amplifier |
| CN101494441A (en) * | 2008-01-24 | 2009-07-29 | 三星电子株式会社 | Wideband low noise amplifier |
-
2010
- 2010-06-02 CN CN2010101897707A patent/CN101854149B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1835390A (en) * | 2005-02-18 | 2006-09-20 | 财团法人成大研究发展基金会 | Low noise amplifier |
| JP2008103889A (en) * | 2006-10-18 | 2008-05-01 | Niigata Seimitsu Kk | Low-noise amplifier |
| US20090102552A1 (en) * | 2007-10-18 | 2009-04-23 | Renesas Technology Corp. | Semiconductor integrated circuit with variable gain amplifier |
| CN101494441A (en) * | 2008-01-24 | 2009-07-29 | 三星电子株式会社 | Wideband low noise amplifier |
| CN201167298Y (en) * | 2008-02-29 | 2008-12-17 | 梁庆九 | Ultra low noise preamplifier |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102820857A (en) * | 2012-06-25 | 2012-12-12 | 东南大学 | Transimpedance amplifier with broad band and high gain, design method and amplifier chip |
| CN102820857B (en) * | 2012-06-25 | 2015-06-10 | 东南大学 | Transimpedance amplifier with broad band and high gain |
| CN103929139A (en) * | 2014-04-22 | 2014-07-16 | 西安电子科技大学 | Transimpedance pre-amplifier of photo-receiver with high-precision automatic gain control |
| CN103929139B (en) * | 2014-04-22 | 2016-10-12 | 西安电子科技大学 | The transimpedance preamplifier of the photoreceiver of High Precision Automatic gain control |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101854149B (en) | 2012-06-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104113293B (en) | A kind of high-gain low-noise difference trans-impedance amplifier | |
| CN102394571B (en) | In-chip integrated low noise amplifier | |
| CN103117711B (en) | Monolithic integrated radio frequency high-gain low-noise amplifier | |
| CN102820857B (en) | Transimpedance amplifier with broad band and high gain | |
| CN107070425B (en) | Broadband low-power-consumption low-noise amplifier applied to wireless sensor network | |
| CN101834567A (en) | Broadband gain adjustable low-noise amplifier | |
| US20080030266A1 (en) | Limiting amplifiers | |
| CN104539242B (en) | current multiplexing low-noise amplifier | |
| CN102394572B (en) | High-linearity low noise amplifier and design method thereof | |
| CN103248324A (en) | High-linearity low-noise amplifier | |
| CN103219951A (en) | Low-power consumption and low-noise amplifier adopting noise cancellation technology | |
| CN109379051A (en) | A kind of wideband low noise amplifier of double mode high-gain, low noise | |
| CN103219952B (en) | A kind of wideband low noise amplifier adopting noise cancellation technique | |
| CN105720929B (en) | A kind of wide high-frequency low-noise acoustic amplifier of band gap automatic biasing | |
| CN112202408A (en) | Cascode radio frequency amplifier of GaN technology | |
| CN103633947A (en) | Noninductive and high-gain CMOS (Complementary Metal Oxide Semiconductor) broadband low-noise amplifier | |
| CN206004628U (en) | Signal receiving front-end | |
| CN109743027A (en) | High-linearity low-noise amplifier | |
| CN106559042B (en) | Low-noise amplifier applied to low voltage | |
| CN101854149B (en) | Preamplifier design method and on-chip preamplifier design method | |
| CN111884605B (en) | Differential operational amplifier | |
| CN106160730A (en) | Small-signal receiving front-end and method of reseptance | |
| CN206712752U (en) | Broadband low-power consumption low-noise amplifier applied to wireless sensor network | |
| CN106953612A (en) | A kind of plus and blowup circuit based on methods of parasitic feedback technology for eliminating | |
| KR100904669B1 (en) | Low noise balun-lna having a symmetric load |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120627 Termination date: 20150602 |
|
| EXPY | Termination of patent right or utility model |