CN101853922B - 一种低电压阻变存储器及其制备方法 - Google Patents
一种低电压阻变存储器及其制备方法 Download PDFInfo
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CN102610273B (zh) * | 2011-12-22 | 2014-10-08 | 北京大学 | 减小阻变存储器转变电流的方法 |
CN102593352A (zh) * | 2012-02-21 | 2012-07-18 | 北京大学 | 一种阻变存储器的制备方法 |
CN103151459B (zh) * | 2013-03-28 | 2015-02-18 | 天津理工大学 | 一种基于氮氧化铪低功耗阻变存储器及其制备方法 |
CN111668253A (zh) * | 2020-06-22 | 2020-09-15 | 中国科学院微电子研究所 | 阻变存储器及其制备方法 |
CN112164749B (zh) * | 2020-09-29 | 2023-04-07 | 北京大学 | 双极性阻变存储器及其制备方法 |
CN113644193A (zh) * | 2021-06-29 | 2021-11-12 | 北京大学 | 阻变存储器件的制备方法、装置、电子设备和存储介质 |
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JP5244454B2 (ja) * | 2008-05-19 | 2013-07-24 | 株式会社東芝 | 不揮発性記憶装置及びその製造方法 |
JP2009289822A (ja) * | 2008-05-27 | 2009-12-10 | Toshiba Corp | 抵抗変化メモリ |
CN101577308A (zh) * | 2009-06-09 | 2009-11-11 | 中国科学院微电子研究所 | 一种掺杂ZrO2阻变存储器及其制作方法 |
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Inventor after: Huang Ru Inventor after: Gao Dejin Inventor after: Zhang Lijie Inventor after: Kuang Yongbian Inventor after: Yu Zhe Inventor after: Tang Yu Inventor after: Pan Yue Inventor after: Tang Poren Inventor before: Gao Dejin Inventor before: Huang Ru Inventor before: Zhang Lijie Inventor before: Kuang Yongbian Inventor before: Yu Zhe Inventor before: Tang Yu Inventor before: Pan Yue Inventor before: Tang Poren |
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Free format text: CORRECT: INVENTOR; FROM: GAO DEJIN HUANG RU ZHANG LIJIE KUANG YONGBIAN YU ZHE TANG YU PAN YUE TANG POREN TO: HUANG RU GAO DEJIN ZHANG LIJIE KUANG YONGBIAN YU ZHE TANG YU PAN YUE TANG POREN |
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Effective date of registration: 20130627 Address after: 100176 No. 18, Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Peking University Address before: 100871 Beijing the Summer Palace Road, Haidian District, No. 5 Patentee before: Peking University |