CN101836151B - 成像光学系统、包括该类型的成像光学系统的用于微光刻的投射曝光设备、以及利用该类型的投射曝光设备生产微结构部件的方法 - Google Patents

成像光学系统、包括该类型的成像光学系统的用于微光刻的投射曝光设备、以及利用该类型的投射曝光设备生产微结构部件的方法 Download PDF

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Publication number
CN101836151B
CN101836151B CN200880113386XA CN200880113386A CN101836151B CN 101836151 B CN101836151 B CN 101836151B CN 200880113386X A CN200880113386X A CN 200880113386XA CN 200880113386 A CN200880113386 A CN 200880113386A CN 101836151 B CN101836151 B CN 101836151B
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optical system
image
imaging optical
fields
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Chinese (zh)
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CN101836151A (zh
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汉斯-于尔根·曼
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Carl Zeiss SMT GmbH
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Carl Zeiss SMT GmbH
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G02B17/0836—Catadioptric systems using more than three curved mirrors
    • G02B17/084—Catadioptric systems using more than three curved mirrors on-axis systems with at least one of the mirrors having a central aperture

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN200880113386XA 2007-10-26 2008-10-02 成像光学系统、包括该类型的成像光学系统的用于微光刻的投射曝光设备、以及利用该类型的投射曝光设备生产微结构部件的方法 Expired - Fee Related CN101836151B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US98285007P 2007-10-26 2007-10-26
DE102007051669A DE102007051669A1 (de) 2007-10-26 2007-10-26 Abbildende Optik, Projektionsbelichtungsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik sowie Verfahren zur Herstellung eines mikrostrukturierten Bauteils mit einer derartigen Projektionsbelichtungsanlage
US60/982,850 2007-10-26
DE102007051669.1 2007-10-26
PCT/EP2008/008336 WO2009052925A1 (en) 2007-10-26 2008-10-02 Imaging optical system, projection exposure installation for micro-lithography comprising an imaging optical system of this type, and method for producing a microstructured component with a projection exposure installation of this type

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201110371663.0A Division CN102354045B (zh) 2007-10-26 2008-10-02 成像光学系统、投射曝光设备、及微结构部件生产方法

Publications (2)

Publication Number Publication Date
CN101836151A CN101836151A (zh) 2010-09-15
CN101836151B true CN101836151B (zh) 2012-12-05

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CN200880113386XA Expired - Fee Related CN101836151B (zh) 2007-10-26 2008-10-02 成像光学系统、包括该类型的成像光学系统的用于微光刻的投射曝光设备、以及利用该类型的投射曝光设备生产微结构部件的方法
CN201110371663.0A Expired - Fee Related CN102354045B (zh) 2007-10-26 2008-10-02 成像光学系统、投射曝光设备、及微结构部件生产方法

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Country Status (7)

Country Link
US (1) US8558991B2 (cg-RX-API-DMAC7.html)
JP (1) JP5431345B2 (cg-RX-API-DMAC7.html)
KR (1) KR101542268B1 (cg-RX-API-DMAC7.html)
CN (2) CN101836151B (cg-RX-API-DMAC7.html)
DE (1) DE102007051669A1 (cg-RX-API-DMAC7.html)
TW (1) TWI443474B (cg-RX-API-DMAC7.html)
WO (1) WO2009052925A1 (cg-RX-API-DMAC7.html)

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US20090303454A1 (en) 2008-06-10 2009-12-10 Nikon Corporation Exposure apparatus with a scanning illumination beam
WO2012013241A1 (en) 2010-07-30 2012-02-02 Carl Zeiss Smt Gmbh Imaging optical system and projection exposure installation for microlithography with an imaging optical system of this type
DE102010043498A1 (de) 2010-11-05 2012-05-10 Carl Zeiss Smt Gmbh Projektionsobjektiv einer für EUV ausgelegten mikrolithographischen Projektionsbelichtungsanlage, sowie Verfahren zum optischen Justieren eines Projektionsobjektives
DE102011076752A1 (de) * 2011-05-31 2012-12-06 Carl Zeiss Smt Gmbh Abbildende Optik
EP2579100A3 (en) 2011-10-03 2017-12-06 ASML Holding N.V. Inspection apparatus, lithographic apparatus, and device manufacturing method
DE102012206153A1 (de) 2012-04-16 2013-10-17 Carl Zeiss Smt Gmbh Optisches System einer mikrolithographischen Projektionsbelichtungsanlage
US9448343B2 (en) * 2013-03-15 2016-09-20 Kla-Tencor Corporation Segmented mirror apparatus for imaging and method of using the same
EP3191907A4 (en) 2014-09-08 2018-08-01 Gear Llc E Grid tied, real time adaptive, distributed intermittent power

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JPH1184249A (ja) * 1998-07-10 1999-03-26 Nikon Corp 露光装置、及び該装置を用いた露光方法
DE19846928A1 (de) * 1998-10-12 2000-04-13 Zeiss Carl Fa Abbildungssystem mit einem Zylinderlinsenarray
JP2000284494A (ja) * 1999-03-31 2000-10-13 Seiko Epson Corp 露光装置
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JP4714403B2 (ja) * 2001-02-27 2011-06-29 エーエスエムエル ユーエス，インコーポレイテッド デュアルレチクルイメージを露光する方法および装置
DE50208750D1 (de) * 2001-08-01 2007-01-04 Zeiss Carl Smt Ag Reflektives Projektionsobjektiv für EUV-Photolithographie
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Also Published As

Publication number Publication date
TW200923596A (en) 2009-06-01
JP5431345B2 (ja) 2014-03-05
CN101836151A (zh) 2010-09-15
TWI443474B (zh) 2014-07-01
CN102354045B (zh) 2014-09-24
KR101542268B1 (ko) 2015-08-06
US8558991B2 (en) 2013-10-15
KR20100069700A (ko) 2010-06-24
DE102007051669A1 (de) 2009-04-30
JP2011501446A (ja) 2011-01-06
WO2009052925A1 (en) 2009-04-30
CN102354045A (zh) 2012-02-15
US20100231884A1 (en) 2010-09-16

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