CN101832830A - Flush packaged pressure sensor with high temperature resistance and high frequency response - Google Patents
Flush packaged pressure sensor with high temperature resistance and high frequency response Download PDFInfo
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- CN101832830A CN101832830A CN 201010129745 CN201010129745A CN101832830A CN 101832830 A CN101832830 A CN 101832830A CN 201010129745 CN201010129745 CN 201010129745 CN 201010129745 A CN201010129745 A CN 201010129745A CN 101832830 A CN101832830 A CN 101832830A
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- 239000002184 metal Substances 0.000 claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 239000011521 glass Substances 0.000 claims abstract description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000010931 gold Substances 0.000 claims abstract description 9
- 229910052737 gold Inorganic materials 0.000 claims abstract description 9
- 238000005538 encapsulation Methods 0.000 claims description 14
- 239000004606 Fillers/Extenders Substances 0.000 claims description 8
- 238000011161 development Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 230000003068 static effect Effects 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 238000005422 blasting Methods 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 230000001447 compensatory effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Abstract
一种齐平封装的耐高温高频响压力传感器，包括压力芯片，压力芯片与玻璃环结合，玻璃环与金属基座粘接，高温转接板与高温转接电路补偿板分别固定在金属基座内，压力芯片与高温转接电路板通过金丝引线连接，高温转接板与高温转接电路补偿板通过高温导线相连，四芯高温导线与高温转接电路补偿板上连接，金属基座与金属外壳连接，金属外壳与固线帽连接，四芯高温导线从金属外壳及固线帽的孔穿出，压力芯片感受外界介质的压力，把压力信号转变为电压信号，电压信号依次通过金丝引线、高温转接板和高温导线传递到高温转接电路补偿板，经过补偿后通过四芯高温导线把电压信号输出，本发明具有耐高温、高频响的优点，用于测量动态或静态的压力信号。
A flush-packaged high-temperature-resistant high-response pressure sensor, including a pressure chip, the pressure chip is combined with a glass ring, the glass ring is bonded to a metal base, and the high-temperature transfer board and the high-temperature transfer circuit compensation board are respectively fixed on the metal base. In the seat, the pressure chip is connected to the high-temperature transfer circuit board through gold wires, the high-temperature transfer board is connected to the high-temperature transfer circuit compensation board through high-temperature wires, the four-core high-temperature wire is connected to the high-temperature transfer circuit compensation board, and the metal base It is connected to the metal shell, and the metal shell is connected to the fixed wire cap. The four-core high-temperature wire passes through the hole of the metal shell and the fixed wire cap. The pressure chip senses the pressure of the external medium and converts the pressure signal into a voltage signal. The voltage signal passes through the metal shell in turn. Wire leads, high-temperature adapter board and high-temperature wires are transmitted to the high-temperature transfer circuit compensation board, and after compensation, the voltage signal is output through four-core high-temperature wires. The invention has the advantages of high temperature resistance and high frequency response, and is used for measuring dynamic or static pressure signal.
Description
Technical field
The present invention relates to art of pressure sensors, be specifically related to a kind of pressure sensor with high temperature resistance and high frequency response that flushes encapsulation.
Background technology
Pressure transducer is widely used in every field such as Aero-Space, national defence, industry, petrochemical complex as one of the most frequently used sensor.In recent years, along with the development of China's Aero-Space and war industry, surpass 100KHz for a kind of frequency response, the high temperature resistant requirement that reaches the pressure transducer more than 100 ℃ is more and more urgent.Requirement can accurately be measured the transient pressure in aviation or the blasting process, because the undistorted waveform of the accurate measurement of transient pressure and dynamic pressure is described in scientific experiment, the design optimization process of argumentation very important effect is arranged.Thereby the pressure transducer with wide frequency response, good dynamic property becomes the focus of modern measuring technology.And the gordian technique of external product is carried out blockade on new techniques to domestic always, and, high frequency sound pressure transducer implementation outlet restriction high temperature resistant to the high precision relevant with national defence fields such as military affairs, Aero-Space.
The sensor of current gaging pressure mainly contains strain-type, piezoelectric type and pressure resistance type, and the natural frequency that traditional strain pressure transducer is too low does not satisfy the needs of test already; The piezoelectric pressure indicator that is used for dynamic pressure measurement also has a lot of shortcomings of self, piezoelectric pressure indicator is output as charge signal, some piezoelectric needs moisture preventive measure, the charge leakage phenomenon appears easily, the subsequent process circuit more complicated, need to adopt high input impedance circuit or charge amplifier to overcome this defective, the cost height, and the easy noise that is difficult to overcome of introducing, piezoelectric pressure indicator can only measure dynamic pressure signal, for static and quasi-static pressure signal, it is powerless just to seem; Utilize the piezoresistive effect of silicon and conventional diffusion silicon piezoresistance type pressure sensor that integrated circuit technique is made to have highly sensitive, dynamic response is fast, the measuring accuracy height, good stability, characteristics such as be easy to miniaturization and can be mass-produced, but, its force sensing resistance and silicon base isolate because being p-n junctions, in serviceability temperature during greater than 80 ℃, because of p-n junction produces mis-behave even the inefficacy that leakage current makes sensor, thereby, the conventional diffusion silicon pressure sensor is difficult to solve the pressure survey difficult problem of high temperature more than 80 ℃, and the existing sensors chip all is encapsulated in metal shell inside, so just there has been a cavity, because the influence of tube chamber effect has reduced the frequency response of sensor.
Summary of the invention
In order to overcome the shortcoming of above-mentioned prior art, the object of the present invention is to provide a kind of pressure sensor with high temperature resistance and high frequency response that flushes encapsulation, be used to measure dynamic or static pressure signal, have advantage high temperature resistant, high frequency sound.
In order to achieve the above object, the technical solution used in the present invention is:
A kind of pressure sensor with high temperature resistance and high frequency response that flushes encapsulation, comprise pressure chip 1, pressure chip 1 combines by the bottom surface of electrostatic bonding and glass ring 2, the top of the bottom outlet of the top and metal base 5 of glass ring 2 is bonding, metal base 5 inside are cavity, dispose two platforms at cavity middle part and bottom, high temperature card extender 3 is separately fixed on the platform at bottom and middle part with high temperature built-up circuit compensating plate 4, pressure chip 1 is connected by five spun gold lead-in wires 13 with high temperature switching circuit board 3, high temperature card extender 3 links to each other by five high temperature wires 12 with high temperature built-up circuit compensating plate 4, four leads that four-core high temperature wire 10 is drawn respectively with high temperature built-up circuit compensating plate 4 on A ', B ', four nodes of C ' and D ' link together, the top of metal base 5 is connected with the bottom of metal shell 6, metal shell 6 tops are connected with solidus cap 7, metal shell 6 central upper portion dispose a hole 9, solidus cap 7 disposes center pit 8, and four-core high temperature wire 10 passes from the hole 9 of metal shell 6 and the center pit 8 of solidus cap 7.
The diameter of described center pit 8 is less than the diameter in hole 9, and center pit 8 overlaps with the center in hole 9.
Dispose the resistance R of four equivalences on the described pressure chip 1, and form the open loop Wheatstone bridge circuit, its termination links to each other with five spun golds lead-in wires 13 respectively with node A, B, C, D and E between resistance R.
Dispose compensating resistance 11 and A ', B ', C ', D ', five nodes of E ' on the described high temperature built-up circuit compensating plate 4, node A ' is connected by compensating resistance 11 with E ', node A ', B ', C ', D ' and E ' are connected with five high temperature wires 12 respectively, wherein the spun gold lead-in wire 13 that connects out from the A node links to each other with the high temperature wire 12 that is connected out from A ' node, and other each nodes are also corresponding mutually.
Described pressure chip 1 adopts the quick chip of high temperature resistant pressure resistance of SOI material development.
Packaged type has adopted and has flushed packaged type, and promptly when encapsulation, pressure chip 1 flushes with the lower surface of metal base 5.
Principle of work of the present invention is: after pressure chip 1 is experienced the pressure of extraneous medium, pressure signal is changed into voltage signal, voltage signal is delivered to high temperature built-up circuit compensating plate 4 by spun gold lead-in wire 13, high temperature card extender 3 and high temperature wire 12 successively, after the compensation through compensating resistance 11 on the high temperature built-up circuit compensating plate 4, voltage signal is exported by four-core high temperature wire 10.
Because pressure chip of the present invention 1 adopts the quick chip of high temperature resistant pressure resistance, and the present invention adopted and flushed packaged type, so have advantage high temperature resistant, high frequency sound, is used to measure dynamic or static pressure signal.
Description of drawings
Fig. 1 is a structure cut-open view of the present invention.
Fig. 2 is the circuit diagram of pressure chip 1.
Fig. 3 is the circuit diagram of high temperature built-up circuit compensating plate 4.
Specific implementation method
Below in conjunction with accompanying drawing the present invention is elaborated.
With reference to accompanying drawing 1, a kind of pressure sensor with high temperature resistance and high frequency response that flushes encapsulation, comprise pressure chip 1, pressure chip 1 combines by the bottom surface of electrostatic bonding and glass ring 2, the top of the bottom outlet of the top and metal base 5 of glass ring 2 is bonding, metal base 5 inside are cavity, dispose two platforms at cavity middle part and bottom, high temperature card extender 3 is separately fixed on the platform at bottom and middle part with high temperature built-up circuit compensating plate 4, pressure chip 1 is connected by five spun gold lead-in wires 13 with high temperature switching circuit board 3, high temperature card extender 3 links to each other by five high temperature wires 12 with high temperature built-up circuit compensating plate 4, four leads that four-core high temperature wire 10 is drawn respectively with high temperature built-up circuit compensating plate 4 on A ', B ', four nodes of C ' and D ' link together, the top of metal base 5 is connected with the bottom of metal shell 6, metal shell 6 tops are connected with solidus cap 7, metal shell 6 central upper portion dispose a hole 9, solidus cap 7 disposes center pit 8, four-core high temperature wire 10 passes from the hole 9 of metal shell 6 and the center pit 8 of solidus cap 7, plays the fixedly effect of four-core high temperature wire 10.
The diameter of described center pit 8 is less than the diameter in hole 9, and center pit 8 overlaps with the center in hole 9.
With reference to accompanying drawing 2, dispose the resistance R of four equivalences on the described pressure chip 1, and form the Wheatstone bridge circuit of open loop, and purpose is for the voltage signal to sensor output compensates, its termination links to each other with five spun golds lead-in wires 13 respectively with node A, B, C, D and E between resistance R.
With reference to accompanying drawing 3, dispose compensating resistance 11 and A ' on the described high temperature built-up circuit compensating plate 4, B ', C ', D ', five nodes of E ', node A ' is connected by compensating resistance 11 with E ', node A ', B ', C ', D ' is connected with five high temperature wires 12 respectively with E ', wherein the spun gold lead-in wire 13 that connects out from the A node links to each other with the high temperature wire 12 that is connected out from A ' node, other each nodes are also corresponding mutually, compensating resistance 11 is used for the voltage signal of compensatory pressure chip 1 output, after the compensation, be communicated with by compensating resistance 11 between A and the E, formed the Wheatstone bridge circuit of a closure.
Described pressure chip 1 adopts the quick chip of high temperature resistant pressure resistance of SOI material development, and purpose is passed through SiO exactly
2Insulation course is kept apart the testing circuit layer and the silicon base of the quick chip of power, has avoided the leakage current generating between the testing circuit and substrate under the high temperature, and the high-temperature stability of the quick chip of raising power makes working temperature can bring up to 200 ℃.
Packaged type has adopted and has flushed packaged type, and promptly when encapsulation, pressure chip 1 flushes with the lower surface of metal base 5, and measured medium is acted directly on the pressure chip 1, thereby has avoided the influence of tube chamber effect.
Principle of work of the present invention is: by the resistance R 1 of four equivalences and form Wheatstone bridge circuit, do not do the time spent when stressing on pressure chip 1, Wheatstone bridge is in equilibrium state, no-voltage output; When being under pressure, pressure chip 1 does the time spent, Wheatstone bridge out of trim and output voltage signal, and the voltage and the pressure of output are proportional, after pressure chip 1 is experienced the pressure of extraneous medium, pressure signal is changed into voltage signal, voltage signal is by spun gold lead-in wire 13, high temperature card extender 3 and high temperature wire 12 are delivered to high temperature built-up circuit compensating plate 4, after the compensation through compensating resistance 11 on the high temperature built-up circuit compensating plate 4, by four-core high temperature wire 10 voltage signal is exported, because pressure chip 1 adopts the quick chip of high temperature resistant pressure resistance of SOI material development, its Young modulus is very high, add the small structure of micromachine electronic system self, so its natural frequency is very high, not only obtain high frequency sound, it is high to the broadband response near natural frequency to be low to moderate zero-frequency, and there is the rise time that is low to moderate submicrosecond to reach very level and smooth amplitude-versus-frequency curve, behind pressure chip 1 and glass ring 2 electrostatic bondings, form circular flat film, based on theoretical analysis, the response frequency of sensor depends mainly on encapsulating structure and mounting means, the present invention takes to flush packaged type, measured medium is acted directly on the chip, thereby avoided the influence of tube chamber effect, reduced because the influence that the sensor frequency response that encapsulation causes reduces.
In the accompanying drawing: 1 is pressure chip; 2 is glass ring; 3 is the high temperature keyset; 4 is high temperature built-up circuit compensating plate; 5 is metal base; 6 is metal shell; 7 is the solidus cap; Hole centered by 8; 9 is the hole; 10 is the four-core high temperature wire; 11 is compensating resistance; 12 is high temperature wire; 13 are the spun gold lead-in wire; R is resistance; A, B, C, D, E, A ', B ', C ', D ', E ' are node.
Claims (6)
1. pressure sensor with high temperature resistance and high frequency response that flushes encapsulation, comprise pressure chip (1), it is characterized in that: pressure chip (1) combines by the bottom surface of electrostatic bonding and glass ring (2), the top of the bottom outlet of the top and metal base (5) of glass ring (2) is bonding, metal base (5) inside is cavity, dispose two platforms at cavity middle part and bottom, high temperature card extender (3) is separately fixed on the platform at bottom and middle part with high temperature built-up circuit compensating plate (4), pressure chip (1) and high temperature switching circuit board (3) by five spun golds go between (13) be connected, high temperature card extender (3) links to each other by five high temperature wires (12) with high temperature built-up circuit compensating plate (4), four leads that four-core high temperature wire (10) is drawn respectively with high temperature built-up circuit compensating plate (4) on (A '), (B '), (C ') and (D ') four nodes link together, the top of metal base (5) is connected with the bottom of metal shell (6), metal shell (6) top is connected with solidus cap (7), metal shell (6) central upper portion disposes a hole (9), solidus cap (7) disposes center pit (8), and four-core high temperature wire (10) passes from the hole (9) of metal shell (6) and the center pit (8) of solidus cap (7).
2. a kind of pressure sensor with high temperature resistance and high frequency response that flushes encapsulation according to claim 1 is characterized in that: the diameter of described center pit (8) is less than the diameter of hole (9), and center pit (8) overlaps with the center of hole (9).
3. a kind of pressure sensor with high temperature resistance and high frequency response that flushes encapsulation according to claim 1, it is characterized in that: the resistance R that disposes four equivalences on the described pressure chip (1), and form the open loop Wheatstone bridge circuit, the node (A) between its termination and resistance R, (B), (C), (D) and (E) respectively with five spun golds go between (13) link to each other.
4. a kind of pressure sensor with high temperature resistance and high frequency response that flushes encapsulation according to claim 1, it is characterized in that: dispose compensating resistance (11) and (A ') on the described high temperature built-up circuit compensating plate (4), (B '), (C '), (D '), (E ') five nodes, node (A ') with (E ') be connected by compensating resistance (11), node (A '), (B '), (C '), (D ') with (E ') be connected with five high temperature wires (12) respectively, the spun gold lead-in wire (13) that wherein connects out from (A) node links to each other with the high temperature wire (12) that is connected out from (A ') node, and other each nodes are also corresponding mutually.
5. a kind of pressure sensor with high temperature resistance and high frequency response that flushes encapsulation according to claim 1 is characterized in that: described pressure chip (1) adopts the quick chip of high temperature resistant pressure resistance of SOI material development.
6. a kind of pressure sensor with high temperature resistance and high frequency response that flushes encapsulation according to claim 1 is characterized in that: pressure chip (1) flushes with the lower surface of metal base (5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010129745XA CN101832830B (en) | 2010-03-22 | 2010-03-22 | Flush packaged pressure sensor with high temperature resistance and high frequency response |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010129745XA CN101832830B (en) | 2010-03-22 | 2010-03-22 | Flush packaged pressure sensor with high temperature resistance and high frequency response |
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| CN101832830A true CN101832830A (en) | 2010-09-15 |
| CN101832830B CN101832830B (en) | 2011-07-20 |
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| CN201010129745XA Expired - Fee Related CN101832830B (en) | 2010-03-22 | 2010-03-22 | Flush packaged pressure sensor with high temperature resistance and high frequency response |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102012288A (en) * | 2010-10-28 | 2011-04-13 | 西安交通大学 | Composite micro-electro-mechanical system (MEMS) high-temperature resistant ultrahigh-pressure sensor |
| CN102426075A (en) * | 2011-08-31 | 2012-04-25 | 江苏奥力威传感高科股份有限公司 | Glass ring sensor packaging structure |
| CN102661822A (en) * | 2012-04-28 | 2012-09-12 | 无锡永阳电子科技有限公司 | Silicon strain foil metallic packaging sensor |
| CN102879131A (en) * | 2011-07-12 | 2013-01-16 | 森萨塔科技公司 | Force sensor assembly and method for assembling a force sensor assembly |
| CN105698859A (en) * | 2016-02-20 | 2016-06-22 | 湖南科技大学 | Train running part state monitoring multi-parameter sensor |
| CN105806520A (en) * | 2016-05-18 | 2016-07-27 | 北京科技大学 | Resistance strain type pressure transducer and testing method thereof |
| CN107462192A (en) * | 2017-09-11 | 2017-12-12 | 重庆大学 | A kind of surface acoustic wave high-temp strain sensor chip based on SOI and piezoelectric membrane and preparation method thereof |
| CN108444618A (en) * | 2018-04-11 | 2018-08-24 | 中北大学 | A kind of novel high-frequency pressure sensor and its packaging method |
| CN108593184A (en) * | 2018-05-08 | 2018-09-28 | 西安航天三沃机电设备有限责任公司 | A kind of burst pressure sensor for special blasting pressure measurement |
| CN109264663A (en) * | 2018-09-27 | 2019-01-25 | 中北大学 | High-temp pressure sensor rear end encapsulating structure and its packaging method |
| CN110375784A (en) * | 2019-07-19 | 2019-10-25 | 中国科学院西安光学精密机械研究所 | A kind of LONG WAVE INFRARED Doppler differential interferometer system support construction |
| CN111896166A (en) * | 2020-09-22 | 2020-11-06 | 宝鸡市兴宇腾测控设备有限公司 | Transmitter core with multiple outputs |
| CN115342954A (en) * | 2022-08-23 | 2022-11-15 | 西安交通大学 | MEMS high-temperature-resistant pressure sensor based on optical-mechanical-electrical-thermal multi-physical-field coupling |
| CN116380330A (en) * | 2023-05-31 | 2023-07-04 | 成都凯天电子股份有限公司 | Liquid-free piezoresistive silicon carbide pressure sensor for high temperature |
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Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102012288A (en) * | 2010-10-28 | 2011-04-13 | 西安交通大学 | Composite micro-electro-mechanical system (MEMS) high-temperature resistant ultrahigh-pressure sensor |
| CN102012288B (en) * | 2010-10-28 | 2012-07-04 | 西安交通大学 | Composite micro-electro-mechanical system (MEMS) high-temperature resistant ultrahigh-pressure sensor |
| CN102879131A (en) * | 2011-07-12 | 2013-01-16 | 森萨塔科技公司 | Force sensor assembly and method for assembling a force sensor assembly |
| CN102879131B (en) * | 2011-07-12 | 2016-09-14 | 森萨塔科技公司 | Force sensor module and the method for assembly force sensor cluster |
| CN102426075A (en) * | 2011-08-31 | 2012-04-25 | 江苏奥力威传感高科股份有限公司 | Glass ring sensor packaging structure |
| CN102426075B (en) * | 2011-08-31 | 2013-07-10 | 江苏奥力威传感高科股份有限公司 | Glass ring sensor packaging structure |
| CN102661822A (en) * | 2012-04-28 | 2012-09-12 | 无锡永阳电子科技有限公司 | Silicon strain foil metallic packaging sensor |
| CN105698859A (en) * | 2016-02-20 | 2016-06-22 | 湖南科技大学 | Train running part state monitoring multi-parameter sensor |
| CN105698859B (en) * | 2016-02-20 | 2017-10-17 | 湖南科技大学 | Multi-parameter sensor for train EEF bogie status monitoring |
| CN105806520A (en) * | 2016-05-18 | 2016-07-27 | 北京科技大学 | Resistance strain type pressure transducer and testing method thereof |
| CN107462192A (en) * | 2017-09-11 | 2017-12-12 | 重庆大学 | A kind of surface acoustic wave high-temp strain sensor chip based on SOI and piezoelectric membrane and preparation method thereof |
| CN107462192B (en) * | 2017-09-11 | 2023-06-23 | 重庆大学 | A surface acoustic wave high temperature strain sensor chip based on SOI and piezoelectric film and its preparation method |
| CN108444618A (en) * | 2018-04-11 | 2018-08-24 | 中北大学 | A kind of novel high-frequency pressure sensor and its packaging method |
| CN108593184A (en) * | 2018-05-08 | 2018-09-28 | 西安航天三沃机电设备有限责任公司 | A kind of burst pressure sensor for special blasting pressure measurement |
| CN108593184B (en) * | 2018-05-08 | 2023-10-17 | 西安航天三沃机电设备有限责任公司 | Explosion pressure sensor for measuring special explosion pressure |
| CN109264663A (en) * | 2018-09-27 | 2019-01-25 | 中北大学 | High-temp pressure sensor rear end encapsulating structure and its packaging method |
| CN109264663B (en) * | 2018-09-27 | 2020-04-24 | 中北大学 | High-temperature pressure sensor rear end packaging structure and packaging method thereof |
| CN110375784A (en) * | 2019-07-19 | 2019-10-25 | 中国科学院西安光学精密机械研究所 | A kind of LONG WAVE INFRARED Doppler differential interferometer system support construction |
| CN111896166A (en) * | 2020-09-22 | 2020-11-06 | 宝鸡市兴宇腾测控设备有限公司 | Transmitter core with multiple outputs |
| CN115342954A (en) * | 2022-08-23 | 2022-11-15 | 西安交通大学 | MEMS high-temperature-resistant pressure sensor based on optical-mechanical-electrical-thermal multi-physical-field coupling |
| CN116380330A (en) * | 2023-05-31 | 2023-07-04 | 成都凯天电子股份有限公司 | Liquid-free piezoresistive silicon carbide pressure sensor for high temperature |
| CN116380330B (en) * | 2023-05-31 | 2023-10-24 | 成都凯天电子股份有限公司 | Liquid-free piezoresistive silicon carbide pressure sensor for high temperature |
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| Publication number | Publication date |
|---|---|
| CN101832830B (en) | 2011-07-20 |
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