CN215064999U - Multichannel pressure measurement unit and pressure measurement device - Google Patents
Multichannel pressure measurement unit and pressure measurement device Download PDFInfo
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- CN215064999U CN215064999U CN202120781538.6U CN202120781538U CN215064999U CN 215064999 U CN215064999 U CN 215064999U CN 202120781538 U CN202120781538 U CN 202120781538U CN 215064999 U CN215064999 U CN 215064999U
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Abstract
The utility model relates to the field of semiconductor technology, especially, relate to a pressure measurement unit and pressure measurement device, this pressure measurement unit includes: the sensor comprises a pressure sensor chip, a temperature sensitive chip, an interconnection substrate and a ceramic packaging substrate; the pressure sensor chip and the temperature sensitive chip are respectively bonded on the interconnection substrate, the pressure sensor chip and the temperature sensitive chip are arranged adjacently, the interconnection substrate is bonded on the ceramic packaging substrate, and the interconnection substrate is made of the same material as the pressure sensor chip and the temperature sensitive chip; a first air guide channel and a second air guide channel are arranged on the interconnection substrate; a third air guide channel and a fourth air guide channel are formed on the ceramic packaging substrate; reference pressure is introduced through the fourth air guide channel, pressure measurement and test are introduced through the third air guide channel, pressure difference is formed between the front surface and the back surface of the pressure sensor chip, the problem of mismatch of thermodynamic parameters between the pressure sensor chip and the temperature sensitive chip and the ceramic packaging substrate is solved, and product performance is improved.
Description
Technical Field
The utility model relates to the field of semiconductor technology, especially, relate to a multichannel pressure measurement unit and pressure measurement device.
Background
In the conventional multi-channel pressure measuring device, piezoresistive MEMS sensor chips are arranged on a circuit board in an array form, the whole circuit board is assembled on an alloy base, and a temperature sensitive chip is integrated on the circuit board and used for monitoring the field temperature of the piezoresistive MEMS sensor chip array so as to realize temperature drift compensation and further improve the measurement precision.
However, when the piezoresistive MEMS sensor and the temperature sensitive chip are directly mounted on the circuit board, there is a technical problem of mismatch of thermodynamic parameters.
SUMMERY OF THE UTILITY MODEL
In view of the above, the present invention has been made in order to provide a multi-channel pressure measurement unit and a pressure measurement device that overcome the above problems or at least partially solve the above problems.
In a first aspect, an embodiment of the present invention provides a pressure measurement unit, including:
the sensor comprises a pressure sensor chip, a temperature sensitive chip, an interconnection substrate and a ceramic packaging substrate;
the pressure sensor chip and the temperature sensitive chip are respectively bonded on the interconnection substrate, the pressure sensor chip and the temperature sensitive chip are arranged adjacently, the interconnection substrate is bonded on the ceramic packaging substrate, and the interconnection substrate is made of the same material as the pressure sensor chip and the temperature sensitive chip;
a first air guide channel corresponding to the pressure sensor chip and a second air guide channel corresponding to the temperature sensitive chip are formed on the interconnection substrate;
a third air guide channel corresponding to the first air guide hole and a fourth air guide channel corresponding to the second air guide channel are formed on the ceramic packaging substrate;
the fourth air guide channel is communicated with reference pressure to act on the front surface of the pressure sensor chip, and the third air guide channel is communicated with pressure measuring and testing pressure to act on the back surface of the pressure sensor chip, so that pressure difference is formed between the front surface and the back surface of the pressure sensor chip.
Preferably, the method further comprises the following steps:
a first metal pipe is connected with the bottom end of the ceramic packaging substrate and the third air guide channel, the first metal pipe is connected with a first access hose, and the first access hose is used for introducing the reference pressure;
and the bottom end of the ceramic packaging substrate and the fourth air guide channel are connected with a second metal pipe, and the second metal pipe is connected with a second access hose and used for accessing a pressure measuring and testing device.
Preferably, the method further comprises the following steps: and the sealing cover is covered on the ceramic packaging substrate and covers the pressure sensor chip, the temperature sensitive chip and the interconnection substrate.
Preferably, the interconnect substrate is specifically any one of:
TSV interconnection substrates and TGV interconnection substrates.
Preferably, the pressure sensor chip and the temperature sensitive chip are both differential pressure type piezoresistive MEMS chips or absolute pressure type piezoresistive MEMS chips.
Preferably, when the pressure sensor chip and the temperature sensitive chip are both differential pressure type piezoresistive MEMS chips, the differential pressure type piezoresistive MEMS chips include:
the first silicon substrate and the first passivation layer are arranged from bottom to top, and the first silicon substrate is provided with a first back cavity structure;
the first passivation layer is provided with a first electrode and a first piezoresistive structure positioned inside the first passivation layer.
Preferably, the first silicon substrate of the differential pressure type piezoresistive MEMS chip is bonded to the interconnection substrate by a sealing adhesive material.
Preferably, when the pressure sensor chip and the temperature sensitive chip are both pressure-insulated piezoresistive MEMS chips, the pressure-insulated piezoresistive MEMS chips include:
the second passivation layer, the second silicon substrate and the third silicon substrate are arranged from bottom to top, the second silicon substrate is provided with a second back cavity structure, and the third silicon substrate is used for sealing the second back cavity structure;
and a second electrode and a second piezoresistive structure positioned in the second passivation layer are arranged on the second passivation layer.
Preferably, the second passivation layer of the pressure-insulated piezoresistive MEMS chip is connected to the interconnect substrate by a seal ring.
In a second aspect, the present invention also provides a pressure measuring device, including:
a first substrate, a second substrate, a plurality of pressure measurement units as described in the first aspect, an operational amplifier, an analog-to-digital conversion unit, and a processor;
each pressure measurement unit is welded on the first substrate through a dual in-line electrode pin;
the second substrate is connected below the first substrate through an inter-board electrical interconnection structure;
the operational amplifier, the analog-to-digital conversion unit and the processor are all integrated on the second substrate, and the operational amplifier, the analog-to-digital conversion unit and the processor are sequentially connected.
The embodiment of the utility model provides an in one or more technical scheme, following technological effect or advantage have at least:
the utility model provides a pair of pressure measurement unit, include: the sensor comprises a pressure sensor chip, a temperature sensitive chip, an interconnection substrate and a ceramic packaging substrate; the pressure sensor chip and the temperature sensitive chip are respectively bonded on an interconnection substrate, the pressure sensor chip and the temperature sensitive chip are arranged adjacently, the interconnection substrate is bonded on a ceramic packaging substrate, the interconnection substrate is made of the same material as the pressure sensor chip and the temperature sensitive chip, and a first air guide channel corresponding to the pressure sensor chip and a first air guide channel corresponding to the temperature sensitive chip are arranged on the interconnection substrate; a third air guide channel corresponding to the first air guide channel and a fourth air guide channel corresponding to the second air guide channel are arranged on the ceramic substrate; the reference pressure is introduced through the fourth air guide channel to act on the front surfaces of the pressure sensor chip and the temperature sensitive chip, the pressure measurement and test pressure is introduced through the third air guide channel to act on the back surface of the pressure sensor chip to form a pressure difference between the front surface and the back surface of the pressure sensor chip, and then interconnection substrates are arranged at the joints of the pressure sensor chip and the temperature sensitive chip and the ceramic substrate respectively.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
fig. 1 shows a schematic structural diagram of a pressure measurement unit in an embodiment of the present invention;
fig. 2 shows a schematic structural diagram of a differential pressure type MEMS chip according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram illustrating a differential pressure MEMS chip bonded to an interconnect substrate according to an embodiment of the present invention;
fig. 4 shows a schematic structural diagram of an absolute pressure MEMS chip according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram illustrating an absolute pressure MEMS chip bonded to an interconnect substrate according to an embodiment of the present invention;
fig. 6 shows a schematic structural diagram of a pressure measurement device in an embodiment of the present invention.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
An embodiment of the utility model provides a pressure measurement unit, as shown in FIG. 1, include:
a pressure sensor chip 020, a temperature sensitive chip 010, an interconnection substrate 040 and a ceramic packaging substrate 080;
the pressure sensor chip 020 and the temperature sensitive chip 010 are respectively bonded on an interconnection substrate 040, the pressure sensor chip 020 and the temperature sensitive chip 010 are arranged adjacently, the interconnection substrate 040 is bonded on a ceramic packaging substrate 080, and the interconnection substrate 040 is made of the same material as the pressure sensor chip 020 and the temperature sensitive chip 010;
the interconnection substrate 040 is provided with a first air guide channel 041 corresponding to the pressure sensor chip 020 and a second air guide channel 042 corresponding to the temperature sensitive chip 010; a third air guide channel 081 corresponding to the first air guide channel 041 and a fourth air guide channel 083 corresponding to the second air guide channel 042 are arranged on the ceramic packaging substrate; the reference pressure is introduced through the fourth air guide channel 083 to act on the front surfaces of the pressure sensor chip 020 and the temperature sensitive chip 010, the pressure measurement and test pressure is introduced through the third air guide channel 081 to act on the back surface of the pressure sensor chip 020, and therefore a pressure difference is formed between the front surface and the back surface of the pressure sensor chip 020.
In an alternative embodiment, the interconnect substrate 040 specifically employs any of the following: TSV interconnection substrates and TGV interconnection substrates.
Since the pressure sensor chip 020 and the temperature sensitive chip 010 are made of silicon materials respectively, and the TSV interconnection substrate and the TGV interconnection substrate are made of silicon materials, the pressure sensor chip 202 and the temperature sensitive chip 010 are bonded to the interconnection substrate 040 made of silicon materials, so that the problem of material thermodynamic parameter mismatch can be solved.
Meanwhile, a first gas guiding channel 041 corresponding to the pressure sensor chip 020 and a second gas guiding channel 042 corresponding to the temperature sensitive chip are opened on the interconnect substrate 040. Specifically, since the interconnection substrate 040 specifically adopts the TSV interconnection substrate or the TGV interconnection substrate, the gas guide channel is formed in the TSV interconnection substrate or the TGV interconnection substrate, the pressure sensor chip 020 and the temperature sensitive chip 010 can be compactly integrated, and the requirement of small size of the current device can be met.
The TSV interconnection substrate is a substrate of a packaging technology for manufacturing vertical through holes between chips or between wafers; the TGV interconnection substrate is a substrate of a through glass via (TSV) packaging technology, and both substrates are made of silicon or glass with a thermal expansion coefficient similar to that of silicon.
In each pressure measurement unit, the pressure sensor chip 020 and the temperature sensitive chip 010 are arranged adjacently, namely the temperature sensitive chip 010 is arranged at a position close to the pressure sensor chip 020, so that a reference signal of a more accurate temperature value can be provided for temperature drift suppression.
This single pressure measurement unit lets in through the third air guide channel 081 that sets up on ceramic package substrate 080 and surveys the pressure test, lets in the reference pressure through the fourth air guide channel 083 that sets up on ceramic package substrate 080 for the front of reference pressure arrival pressure sensor chip 020 and temperature sensitive chip 010 makes the test pressure arrive the back of pressure sensor chip 020, so that the pressure differential between the front and the back of pressure sensor chip 020, based on this pressure differential, obtain the electrical signal that is directly proportional to the pressure differential change, in order to obtain actual pressure value.
The third air guide channel 081 is in communication with the first air guide channel 041, so that the test pressure introduced through the third air guide channel 081 directly reaches the back surface of the pressure sensor chip 020, i.e., the back cavity structure. One end of the second gas guide channel 042 is connected to the back surface of the temperature sensitive chip 010, i.e., the back cavity structure, and the other end is connected to the surface of the interconnection substrate 040, the temperature sensitive chip 010 is kept in a zero output state by setting the pressure difference between two sides of the temperature sensitive chip 010 to zero, i.e., the pressures arranged on the two sides are the same, and at the moment, the output of the temperature sensitive chip 010 directly reflects the change of the temperature, so that the working temperature of the pressure sensor chip 020 piezoresistive strip can be obtained by measuring the change of the piezoresistive strip of the temperature sensitive chip.
In an alternative embodiment, a first metal tube 082 is connected to the bottom end of the ceramic package substrate 080 and the third gas guide channel 081, and the first metal tube 082 is connected to a first connection hose 400, and the first connection hose 400 is used for supplying a reference pressure.
A second metal tube 084 is connected to the bottom end of the ceramic package substrate 080 and the fourth air guide channel 083, the second metal tube 084 is connected to a second inlet hose 500, and the second inlet hose 500 is used for introducing a pressure measurement and test.
The mode of inserting the metal pipe at the air guide channel and then connecting and connecting the hose is adopted, so that the air tightness of the introduced air source is improved, and the connection mode is convenient to disassemble and assemble.
In an alternative embodiment, the pressure measurement unit further comprises: and a sealing cover 050 covering the ceramic package substrate 080, wherein the sealing cover 050 covers the pressure sensor chip 020, the temperature sensitive chip 020 and the interconnection substrate 040.
The sealing cap 050 is made of aluminum and is used for protecting and sealing the chip arranged in the cap.
Wherein the sealing cover 050 is bonded to the ceramic package substrate 080 by a low stress adhesive 070 to ensure good air tightness of the air guide channel.
The pressure sensor chip 020 and the temperature sensitive chip 010 are both differential pressure type MEMS chips.
Specifically, fig. 2 shows a structure of a single pressure measurement unit using a differential pressure type MEMS chip.
The differential pressure type piezoresistive MEMS chip comprises: a first silicon substrate 014 and a first passivation layer 013 from bottom to top, wherein the first silicon substrate 014 is provided with a first back cavity structure A; the first passivation layer is provided with a first electrode 012, and a first piezoresistive structure 011 located inside the first passivation layer 013.
The first electrode 012 includes at least one power electrode, one ground electrode, and two signal electrodes.
When a differential pressure type MEMS chip is used, as shown in fig. 3, the first silicon substrate 014 of the differential pressure type MEMS chip is bonded to the interconnect substrate 040 by the seal bonding material 031 to achieve a sealed connection.
As shown in fig. 4, in an embodiment of the present invention, an absolute pressure type piezoresistive MEMS chip structure is further adopted, and the absolute pressure type piezoresistive MEMS chip includes: from bottom to top, the second passivation layer 016, the second silicon substrate 017 and the third silicon substrate 015, the second silicon substrate 017 is provided with a second back cavity B, and the third silicon substrate 015 is used for sealing the second back cavity B.
In an embodiment of the present invention, the absolute pressure type piezoresistive MEMS chip is inverted compared to the differential pressure type piezoresistive MEMS chip, and the second passivation layer 016 is provided with the second electrode 018 thereon and the second piezoresistive structure 019 inside the second passivation layer 016. The second electrode 018 also includes at least one power electrode, one ground electrode, and two signal electrodes.
As shown in fig. 5, when the absolute pressure type piezoresistive MEMS chip is connected to the interconnect substrate 040, the second passivation layer 016 has a protruding second electrode 018 structure, so when the absolute pressure type piezoresistive MEMS chip is connected to the interconnect substrate 040, a sealing ring 032 is specifically connected to the interconnect substrate 040, and a sealing connection is achieved, and the sealing ring 032 may be made of silicon rubber or silicon sealant, which is not limited herein.
The embodiment of the utility model provides an in one or more technical scheme, following technological effect or advantage have at least:
the utility model provides a pair of pressure measurement unit, include: the sensor comprises a pressure sensor chip, a temperature sensitive chip, an interconnection substrate and a ceramic packaging substrate; the pressure sensor chip and the temperature sensitive chip are respectively bonded on an interconnection substrate, the pressure sensor chip and the temperature sensitive chip are arranged adjacently, the interconnection substrate is bonded on a ceramic packaging substrate, the interconnection substrate is made of the same material as the pressure sensor chip and the temperature sensitive chip, and a first air guide channel corresponding to the pressure sensor chip and a first air guide channel corresponding to the temperature sensitive chip are arranged on the interconnection substrate; a third air guide channel corresponding to the first air guide channel and a fourth air guide channel corresponding to the second air guide channel are arranged on the ceramic substrate; the reference pressure is introduced through the fourth air guide channel to act on the front surfaces of the pressure sensor chip and the temperature sensitive chip, the pressure measurement and test pressure is introduced through the third air guide channel to act on the back surface of the pressure sensor chip to form a pressure difference between the front surface and the back surface of the pressure sensor chip, and then interconnection substrates are arranged at the joints of the pressure sensor chip and the temperature sensitive chip and the ceramic substrate respectively.
Example two
Based on the same utility model concept, the embodiment two of the utility model provides a pressure measurement device is still provided, as shown in fig. 6, include:
a first substrate 100, a second substrate 300, a plurality of pressure measurement units 000 as described in the first embodiment, an operational amplifier 310, an analog-to-digital conversion unit 320, and a processor 330;
each pressure measurement unit 000 is soldered to the first substrate 100 through a dual in-line electrode pin 060, respectively;
the first substrate 100 is connected to the second substrate 300 through the inter-board electrical interconnection structure 200;
the operational amplifier 310, the analog-to-digital conversion unit 320 and the processor 330 are integrated on the second substrate 300, and the operational amplifier 310, the analog-to-digital conversion unit 320 and the processor 330 are sequentially connected.
In an alternative embodiment, the first substrate 100 and the second substrate 300 are both PCB substrates.
In an alternative embodiment, the operational amplifier 310, the analog-to-digital conversion unit 320 and the processor 330 are integrated on the second substrate 300 by wire bonding or pasting.
The height of the inter-board electrical interconnect structure 200 is set according to the heights of the operational amplifier 310, the analog-to-digital conversion unit 320 and the processor 330.
The electrical interconnection structure 200 between boards may be in the form of solder balls or solder columns, and is not limited herein.
In an optional implementation, based on the circuit system setting, digital fitting and compensation are performed to improve measurement accuracy, and the specific steps include:
setting the state of digital fitting and compensation, placing the pressure measuring device in a temperature control environment, setting the environment temperature and the introduced air pressure source P1、P2、P3、P4… … and a reference air pressure source, each pressure measurement unit generates an electrical signal based on the pressure difference and the ambient temperature, transmits the electrical signal to the operational amplifier 310, amplifies the signal, enters the analog-to-digital conversion unit 320, performs analog-to-digital conversion, and finally enters the processor 330, records the corresponding input pressure and the generated electrical signal under different ambient temperature conditions, and establishes the relationship between the input pressure and the generated electrical signal under different ambient temperature conditions.
Under the test state, the processor calls the fitting curve according to the selected air pressure channel and the actual temperature measured by the temperature sensitive chip, and the measured pressure is calculated according to the voltage value output by the pressure sensing chip.
By adopting the pressure measuring device, calibration and fault detection can be realized when the error exceeds a preset range, and the measurement precision is improved. The pressure sensor is applied to wind tunnel tests or flight tests, and can realize multichannel rapid measurement of pressure.
While the preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. It is therefore intended that the appended claims be interpreted as including the preferred embodiment and all such alterations and modifications as fall within the scope of the invention.
It will be apparent to those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (10)
1. A multi-channel pressure measurement unit, comprising:
the sensor comprises a pressure sensor chip, a temperature sensitive chip, an interconnection substrate and a ceramic packaging substrate;
the pressure sensor chip and the temperature sensitive chip are respectively bonded on the interconnection substrate, the pressure sensor chip and the temperature sensitive chip are arranged adjacently, the interconnection substrate is bonded on the ceramic packaging substrate, and the interconnection substrate is made of the same material as the pressure sensor chip and the temperature sensitive chip;
a first air guide channel corresponding to the pressure sensor chip and a second air guide channel corresponding to the temperature sensitive chip are formed on the interconnection substrate;
a third air guide channel corresponding to the first air guide hole and a fourth air guide channel corresponding to the second air guide channel are formed on the ceramic packaging substrate;
the fourth air guide channel is communicated with reference pressure to act on the front surface of the pressure sensor chip, and the third air guide channel is communicated with pressure measuring and testing pressure to act on the back surface of the pressure sensor chip, so that pressure difference is formed between the front surface and the back surface of the pressure sensor chip.
2. The pressure measurement cell of claim 1, further comprising:
a first metal pipe is connected with the bottom end of the ceramic packaging substrate and the third air guide channel, the first metal pipe is connected with a first access hose, and the first access hose is used for introducing the reference pressure;
and the bottom end of the ceramic packaging substrate and the fourth air guide channel are connected with a second metal pipe, and the second metal pipe is connected with a second access hose and used for accessing a pressure measuring and testing device.
3. The pressure measurement cell of claim 1, further comprising: and the sealing cover is covered on the ceramic packaging substrate and covers the pressure sensor chip, the temperature sensitive chip and the interconnection substrate.
4. Pressure measuring cell according to claim 1, characterized in that the interconnect substrate is in particular any of the following:
TSV interconnection substrates and TGV interconnection substrates.
5. The pressure measurement unit of claim 1, wherein the pressure sensor chip and the temperature sensitive chip are both differential pressure piezoresistive MEMS chips or absolute pressure piezoresistive MEMS chips.
6. The pressure measurement unit of claim 5, wherein when the pressure sensor chip and the temperature sensitive chip are both differential piezoresistive MEMS chips, the differential piezoresistive MEMS chips comprise:
the first silicon substrate and the first passivation layer are arranged from bottom to top, and the first silicon substrate is provided with a first back cavity structure;
the first passivation layer is provided with a first electrode and a first piezoresistive structure positioned inside the first passivation layer.
7. The pressure measurement cell of claim 6, wherein the first silicon substrate of the differential pressure piezoresistive MEMS chip is bonded to the interconnect substrate by a seal bonding material.
8. The pressure measurement unit of claim 5, wherein when the pressure sensor chip and the temperature sensitive chip are both absolute piezoresistive MEMS chips, the absolute piezoresistive MEMS chips comprise:
the second passivation layer, the second silicon substrate and the third silicon substrate are arranged from bottom to top, the second silicon substrate is provided with a second back cavity structure, and the third silicon substrate is used for sealing the second back cavity structure;
and a second electrode and a second piezoresistive structure positioned in the second passivation layer are arranged on the second passivation layer.
9. The pressure measurement cell of claim 8, wherein the second passivation layer of the pressure-isolated piezoresistive MEMS chip is connected to the interconnect substrate by a seal ring.
10. A pressure measurement device, comprising:
a first substrate, a second substrate, a plurality of pressure measurement units according to any one of claims 1-9, an operational amplifier, an analog-to-digital conversion unit, a processor;
each pressure measurement unit is welded on the first substrate through a dual in-line electrode pin;
the second substrate is connected below the first substrate through an inter-board electrical interconnection structure;
the operational amplifier, the analog-to-digital conversion unit and the processor are all integrated on the second substrate, and the operational amplifier, the analog-to-digital conversion unit and the processor are sequentially connected.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202120781538.6U CN215064999U (en) | 2021-04-14 | 2021-04-14 | Multichannel pressure measurement unit and pressure measurement device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202120781538.6U CN215064999U (en) | 2021-04-14 | 2021-04-14 | Multichannel pressure measurement unit and pressure measurement device |
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| CN215064999U true CN215064999U (en) | 2021-12-07 |
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